IQE020N04LM6CGSCATMA1 vs ISZ028N03LF2SATMA1 Сравнение
Подробное сравнение бок о бок IQE020N04LM6CGSCATMA1 от Infineon и ISZ028N03LF2SATMA1 от Infineon. Сравните ключевые характеристики, электрические параметры, упаковку, статус жизненного цикла, цены и наличие, чтобы выбрать лучший компонент для ваших требований.
Infineon
IQE020N04LM6CGSCATMA1 - 40V OptiMOS 6 2.0mΩ N-MOSFET, PG-WHTFN-9
IQE020N04LM6CGSCATMA1 ✓ АктивенInfineon
ISZ028N03LF2SATMA1 - 30V 128A N-Ch StrongIRFET 2 MOSFET | Infineon
ISZ028N03LF2SATMA1 ✓ АктивенСравнение характеристик
| Параметр | IQE020N04LM6CGSCATMA1 | ISZ028N03LF2SATMA1 |
|---|---|---|
| Бренд | Infineon | Infineon |
| Категория | MOSFETs | MOSFETs |
| Статус жизненного цикла | Активен | Активен |
| Наличие | In Stock | In Stock |
| Цена за единицу (USD) | $1,65 | $0,49 |
| Manufacturer | Infineon Technologies | — |
| Part Family | OptiMOS 6 low-voltage power MOSFET | — |
| Channel Type | N-Channel | — |
| Drain-Source Voltage (VDS) | 40 V | 30 V |
| Continuous Drain Current at TA=25°C | 25 A | — |
| Continuous Drain Current at TC=25°C | 166 A | — |
| Maximum RDS(on) | 2.0 mΩ (per IQE part-number decode) | — |
| Power Dissipation at TA=25°C | 2.5 W | — |
| Power Dissipation at TC=25°C | 107 W | — |
| Корпус | PG-WHTFN-9-1 (PQFN 3.3 x 3.3 mm Source-Down dual-side cooled) | PG-TSDSON-8 FL (FL = flat lead) |
| Число выводов | 9 | — |
| Тип монтажа | Surface Mount | Surface Mount |
| Диапазон рабочих температур | -55 °C to +150 °C (junction, per Infineon MOSFET convention) | -55C to +175C (junction, typical) |
| Статус RoHS | Compliant | Compliant |
| Lead-Free | Yes | — |
| Уровень MSL | 1 (per JEDEC J-STD-020 for similar PQFN MOSFETs) | 1 |
| Technology | OptiMOS 6 trench | StrongIRFET 2 (Trench MOSFET) |
| FET Type | — | N-Channel |
| Continuous Drain Current (ID) at Tc | — | 128 A |
| Continuous Drain Current (ID) at Ta | — | 22 A |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed drain current] |
| Gate Threshold Voltage (VGS(th)) | — | 2.35 V |
| On-Resistance (RDS(on)) max | — | 2.8 mΩ |
| Power Dissipation (Tc) | — | 83 W |
| Power Dissipation (Ta) | — | 3 W |
| Gate Drive Voltage (recommended) | — | 10 V (logic level at 4.5 V) |
| Avalanche Energy Rated | — | Yes (single-pulse) |
| Total Gate Charge (Qg) | — | [DATA_NEEDED: Qg] |