IQE036N08NM6CGATMA1 vs IQE031N08LM6CGSCATMA1 Сравнение
Подробное сравнение бок о бок IQE036N08NM6CGATMA1 от Infineon и IQE031N08LM6CGSCATMA1 от Infineon. Сравните ключевые характеристики, электрические параметры, упаковку, статус жизненного цикла, цены и наличие, чтобы выбрать лучший компонент для ваших требований.
Infineon
IQE031N08LM6CGSCATMA1 - 80V OptiMOS 6 N-Ch MOSFET 127A | Infineon
IQE031N08LM6CGSCATMA1 ✓ АктивенСравнение характеристик
| Параметр | IQE036N08NM6CGATMA1 | IQE031N08LM6CGSCATMA1 |
|---|---|---|
| Бренд | Infineon | Infineon |
| Категория | MOSFETs | MOSFETs |
| Статус жизненного цикла | Активен | Активен |
| Наличие | In Stock | In Stock |
| Цена за единицу (USD) | $0,82 | $0,74 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS 6 | OptiMOS 6 (40 V to 100 V) |
| Тип транзистора | N-Channel MOSFET | — |
| Drain-Source Voltage (Vds) | 80 V | — |
| Gate-Source Voltage (Vgs) | [DATA_NEEDED: Vgs max] | — |
| Continuous Drain Current (Id) at Tc | 118 A | — |
| Continuous Drain Current (Id) at Ta | 16.7 A | — |
| Rds(on) max at Vgs=10V | 3.6 mOhm | — |
| Gate Threshold Voltage (Vgs(th)) | 3.5 V (max) | — |
| Power Dissipation at Tc | 125 W | — |
| Power Dissipation at Ta | 2.5 W | — |
| Диапазон рабочих температур | -55 C to +175 C (junction, Tj) | -55 C to +175 C (junction, typical for OptiMOS 6) |
| Корпус | PG-TTFN-9-3 (Source-Down PQFN, 3.3 x 3.3 mm) | PG-WHTFN-9 (PQFN 3.3x3.3 Source-Down Center-Gate) |
| Тип монтажа | Surface Mount | Surface Mount |
| Уровень MSL | MSL1 (per JEDEC J-STD-020) | 1 (per JEDEC J-STD-020, typical for Infineon PQFN) |
| Статус RoHS | Compliant | Compliant |
| Technology | Trench MOSFET, OptiMOS 6 | — |
| Configuration | Single N-channel, Source-Down | — |
| Polarity / Channel Type | — | N-Channel |
| Drain-to-Source Voltage (VDS max) | — | 80 V |
| Continuous Drain Current (ID) at Ta=25C | — | 18 A |
| Continuous Drain Current (ID) at Tc | — | 127 A |
| Power Dissipation (PD) at Ta=25C | — | 2.5 W |
| Power Dissipation (PD) at Tc | — | 125 W |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) typical value] |
| On-State Resistance RDS(on) max | — | [DATA_NEEDED: RDS(on) at VGS=10 V] |
| Gate Drive Level | — | Logic-level |
| Avalanche Tested | — | 100% avalanche tested |
| Lead-Free | — | Yes |