IQEH68NE2LM7UCGATMA1 vs IQE065N10NM5CGSCATMA1 Сравнение
Подробное сравнение бок о бок IQEH68NE2LM7UCGATMA1 от Infineon и IQE065N10NM5CGSCATMA1 от Infineon. Сравните ключевые характеристики, электрические параметры, упаковку, статус жизненного цикла, цены и наличие, чтобы выбрать лучший компонент для ваших требований.
Infineon
IQEH68NE2LM7UCGATMA1 - 25V OptiMOS 7 N-MOSFET, 338A | Infineon
IQEH68NE2LM7UCGATMA1 ✓ АктивенInfineon
IQE065N10NM5CGSCATMA1 - 100V 6.5mOhm N-Ch MOSFET | Infineon
IQE065N10NM5CGSCATMA1 ✓ АктивенСравнение характеристик
| Параметр | IQEH68NE2LM7UCGATMA1 | IQE065N10NM5CGSCATMA1 |
|---|---|---|
| Бренд | Infineon | Infineon |
| Категория | MOSFETs | MOSFETs |
| Статус жизненного цикла | Активен | Активен |
| Наличие | In Stock | In Stock |
| Цена за единицу (USD) | $1,35 | $1,28 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | OptiMOS 7 | OptiMOS 5 |
| Тип транзистора | N-Channel MOSFET | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | 25 V | — |
| Continuous Drain Current (ID) @ Ta | 47 A | — |
| Pulsed Drain Current (IDM) @ Tc | 338 A | — |
| Power Dissipation (PD) @ Ta | 2.5 W | — |
| Power Dissipation (PD) @ Tc | 130 W | — |
| Gate Threshold Voltage Type | Logic-level (per OptiMOS 7 family) | — |
| On-Resistance Family | RDS(on)10 / RDS(on)45 (10V and 4.5V rated) | — |
| Maximum Junction Temperature | 175 °C | — |
| Диапазон рабочих температур | -55 °C to +175 °C (typical for OptiMOS 7) | -55 C to +150 C |
| Корпус | PG-TTFN-9-3 (surface mount) | PG-WHTFN-9-1 (Source-Down) |
| Тип монтажа | Surface Mount | Surface Mount |
| Уровень MSL | [DATA_NEEDED: MSL Level] | — |
| Статус RoHS | Compliant (per distributor listing) | Compliant |
| Technology | OptiMOS 7 trench MOSFET | OptiMOS 5 trench-gate |
| Packaging | Tape & Reel (per ATMA1 suffix) | — |
| Drain-to-Source Voltage (VDS) | — | 100 V |
| Continuous Drain Current (ID) at TC=25 C | — | 85 A |
| Continuous Drain Current (ID) at TA | — | 13 A |
| On-Resistance (RDS(on)) max at VGS=10V | — | 6.5 mOhm |
| Power Dissipation at TA | — | 2.5 W |
| Power Dissipation at TC | — | 100 W |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) typical value] |
| Lead-Free | — | Yes |