IR2010STRPBF vs IR2109SPBF Сравнение
Подробное сравнение бок о бок IR2010STRPBF от Infineon и IR2109SPBF от Infineon. Сравните ключевые характеристики, электрические параметры, упаковку, статус жизненного цикла, цены и наличие, чтобы выбрать лучший компонент для ваших требований.
Сравнение характеристик
| Параметр | IR2010STRPBF | IR2109SPBF |
|---|---|---|
| Бренд | Infineon | Infineon |
| Категория | Power MOSFET Drivers | Power MOSFET Drivers |
| Статус жизненного цикла | Активен | Активен |
| Наличие | In Stock | In Stock |
| Цена за единицу (USD) | $0,97 | $1,05 |
| Manufacturer | Infineon Technologies (formerly International Rectifier) | — |
| Part Number | IR2010STRPBF | — |
| Driver Configuration | Half-Bridge (High-Side / Low-Side) | Half-Bridge |
| Количество выходов | 2 (independent high and low side) | — |
| Peak Output Current (Source/Sink) | 3 A / 3 A | — |
| High-Side Floating Supply Voltage (VBS) | Up to 200 V | — |
| Gate Drive Supply Range (VCC) | 10 V to 20 V | — |
| Logic Supply Range | 3.3 V to 20 V | — |
| Logic Input Compatibility | 3.3 V logic compatible | — |
| Propagation Delay (Typical) | 95 ns | — |
| Undervoltage Lockout | Yes (both channels) | Yes (VCC) |
| dV/dt Immunity | Yes | — |
| Negative Transient Tolerance | Yes (on switch node) | — |
| Bootstrap Capable | Yes (floating channel) | — |
| Корпус | 16-SOIC (DW, 0.300 inch, 7.50 mm body width) | SOIC-8 |
| Тип монтажа | Surface Mount | Surface Mount |
| Shipping Packaging | Tape & Reel (TR) | — |
| Polarity | Non-Inverting | — |
| Статус RoHS | Compliant (PBF suffix indicates lead-free) | Compliant |
| Number of Drivers | — | 2 (high-side + low-side) |
| High-Side Voltage Tolerance | — | 600 V |
| Supply Voltage (VCC) | — | 10 V to 20 V |
| Source Current (typical) | — | 0.2 A |
| Sink Current (typical) | — | 0.35 A |
| Turn-On Propagation Delay | — | 150 ns |
| Turn-Off Propagation Delay | — | 150 ns |
| Время нарастания | — | 200 ns |
| Время спада | — | 50 ns |
| Quiescent VCC Current | — | 1 mA |
| Input Logic Compatibility | — | 3.3 V / 5 V CMOS / TTL |
| Bootstrap Diode | — | Integrated |
| Рабочая температура перехода | — | -40 C to +150 C |