IR2110STRPBF vs IR2110SPBF Сравнение
Подробное сравнение бок о бок IR2110STRPBF от Infineon и IR2110SPBF от Infineon. Сравните ключевые характеристики, электрические параметры, упаковку, статус жизненного цикла, цены и наличие, чтобы выбрать лучший компонент для ваших требований.
Сравнение характеристик
| Параметр | IR2110STRPBF | IR2110SPBF |
|---|---|---|
| Бренд | Infineon | Infineon |
| Категория | Power MOSFET Drivers | Power MOSFET Drivers |
| Статус жизненного цикла | Активен | Активен |
| Наличие | In Stock | In Stock |
| Цена за единицу (USD) | $1,35 | $1,98 |
| Функция | Half-Bridge Gate Driver | Half-bridge gate driver |
| Number of Drivers | 2 (High-Side + Low-Side) | — |
| Driven Configuration | Half-Bridge | — |
| Channel Type | Independent, Synchronous | — |
| Тип выхода | Non-Inverting | — |
| Peak Output Current (Source/Sink) | 2.5 A / 2.5 A | — |
| Offset Voltage (High-Side, max) | 500 V | — |
| Supply Voltage (VCC) | 10 V to 20 V | — |
| Logic Input Compatibility | CMOS / LSTTL, down to 3.3 V logic | 3.3 V CMOS / LSTTL |
| Input Threshold | Logic-level compatible (3.3 V / 5 V) | — |
| Undervoltage Lockout (UVLO) | Yes (both VCC and VBS) | Yes, both Vcc and VCC |
| Bootstrap Supply | Required for high-side channel | — |
| Rise Time (Typ) | 25 ns (at 1 nF load) [DATA_NEEDED: per-datasheet spec conditions] | — |
| Fall Time (Typ) | 17 ns (at 1 nF load) [DATA_NEEDED: per-datasheet spec conditions] | — |
| Propagation Delay (Typ) | [DATA_NEEDED: per-datasheet spec conditions] | — |
| Диапазон рабочих температур | -40 C to +125 C | -40 C to +125 C |
| Корпус | 16-SOIC (SOIC W / 2110-S16) | 16-pin SOIC (SO-16, DW suffix) |
| Тип монтажа | Surface Mount | Surface Mount |
| Уровень MSL | [DATA_NEEDED] | — |
| Статус RoHS | Compliant (Pb-free, PBF suffix) | — |
| Lead-Free | Yes (PBF suffix) | — |
| Qualification | [DATA_NEEDED: AEC-Q100 status] | — |
| Топология | — | High-side and low-side referenced output channels |
| Number of Channels | — | 2 (1 high-side, 1 low-side) |
| Logic Type | — | Non-inverting |
| Maximum Offset Voltage (Voffset) | — | 500 V |
| Gate Drive Supply Voltage (Vcc/VCC) | — | 10 V to 20 V |
| Peak Output Current (source/sink) | — | 2.0 A / 2.0 A |
| Typical Propagation Delay (ton/toff) | — | 94 ns / 94 ns |
| Rise/Fall Time (typical) | — | 25 ns / 17 ns |
| Bootstrap Diode | — | Integrated |
| Technology | — | HVIC + latch-immune CMOS |
| Lead-Free / RoHS | — | Yes / Compliant (Pb-free PBF suffix) |