IR2128SPBF vs IR2010SPBF Сравнение
Подробное сравнение бок о бок IR2128SPBF от Infineon и IR2010SPBF от Infineon. Сравните ключевые характеристики, электрические параметры, упаковку, статус жизненного цикла, цены и наличие, чтобы выбрать лучший компонент для ваших требований.
Сравнение характеристик
| Параметр | IR2128SPBF | IR2010SPBF |
|---|---|---|
| Бренд | Infineon | Infineon |
| Категория | Power MOSFET Drivers | Power MOSFET Drivers |
| Статус жизненного цикла | Активен | Активен |
| Наличие | In Stock | In Stock |
| Цена за единицу (USD) | $1,62 | $1,20 |
| Driver Type | High-Side, Low-Side (Half-Bridge), Inverting | — |
| Number of Channels | 1 | — |
| Output Current | 0.5 A | — |
| Maximum Offset Voltage | 600 V | — |
| Supply Voltage Range | 10 V to 20 V | — |
| Propagation Delay | 150 ns (typical) | — |
| Logic Input Compatibility | CMOS / LSTTL (down to 3.3 V) | CMOS or LSTTL, down to 3.0 V |
| Gate Drive Range (Motor Drive) | 20 V (IR2127/IR2128) | — |
| dV/dt Immunity | Yes | — |
| Negative Transient Tolerance | Yes | — |
| Technology | HVIC and latch-immune CMOS | — |
| Current Sensing | Integrated (single channel) | — |
| Рабочая температура | -40 C to +125 C | -40C to +150C |
| Корпус | 8-SOIC (PDSO8) | 16-SOIC (SOIC-16) |
| Тип монтажа | Surface Mount | Surface Mount |
| Lead-Free / RoHS | Yes (PbF suffix) | — |
| Configuration | Inverting input | Half-Bridge (high + low side) |
| Number of Drivers | — | 2 (independent high/low-side outputs) |
| Offset Voltage (max) | — | 200 V |
| Peak Source/Sink Current | — | 3 A / 3 A |
| Propagation Delay (typ) | — | 95 ns |
| Rise / Fall Time (typ) | — | [DATA_NEEDED: rise/fall time] |
| VCC Supply Voltage (low side) | — | 10 V to 20 V |
| VB Bootstrap Supply (high side) | — | VCC + 10 V to VCC + 20 V |
| Shutdown Feature | — | Yes (active input) |
| Уровень MSL | — | [DATA_NEEDED: MSL rating] |
| Статус RoHS | — | Compliant (Pb-free PBF suffix) |
| Drive Technology | — | High-speed power MOSFET / IGBT driver |
| Channel Matching | — | Matched propagation delays for cross-conduction minimization |