IRF1010ZPBF vs IRF1405PBF Сравнение
Подробное сравнение бок о бок IRF1010ZPBF от Infineon и IRF1405PBF от Infineon. Сравните ключевые характеристики, электрические параметры, упаковку, статус жизненного цикла, цены и наличие, чтобы выбрать лучший компонент для ваших требований.
Сравнение характеристик
| Параметр | IRF1010ZPBF | IRF1405PBF |
|---|---|---|
| Бренд | Infineon | Infineon |
| Категория | MOSFETs | MOSFETs |
| Статус жизненного цикла | Активен | Активен |
| Наличие | In Stock | In Stock |
| Цена за единицу (USD) | $1,36 | $1,42 |
| Polarity | N-Channel | — |
| Drain-Source Voltage (Vdss) | 55 V | — |
| Continuous Drain Current (Id) at Tc | 75 A (Tc=25C) | — |
| Power Dissipation (Pd) at Tc | 140 W (Tc=25C) | — |
| On-Resistance (Rds on) Max | [DATA_NEEDED: Rds(on) max at 10V] (typ approx. 7.5 mOhm per Mouser listing) | — |
| Total Gate Charge (Qg) | 63 nC (typ, per Mouser listing) | — |
| MOSFET Operating Mode | Enhancement | — |
| Корпус | TO-220AB (3-pin + tab), Through Hole | TO-220AB (through-hole) |
| Configuration | Single MOSFET | — |
| Maximum Junction Temperature | 175 C | — |
| Тип монтажа | Through Hole | Through Hole |
| Qualification | JEDEC industry standard qualification | JEDEC qualified, optimized for switching below 100 kHz |
| Avalanche Rating | Improved repetitive avalanche rated | — |
| Статус RoHS | Compliant (PBF = Pb-free) | PbF suffix indicates lead-free / RoHS compliant |
| Lead Status | Lead Free | — |
| Gate Threshold Voltage (Vgs th) | [DATA_NEEDED: gate threshold voltage range] | — |
| Manufacturer | — | Infineon Technologies (formerly International Rectifier) |
| Part Number Suffix | — | PbF (lead-free, RoHS compliant) |
| Тип транзистора | — | N-Channel MOSFET |
| Technology | — | HEXFET (Stripe Planar cell structure) |
| Drain-Source Voltage (V_DS) | — | 55 V |
| Continuous Drain Current (I_D, Tc=25C) | — | 169 A |
| Continuous Drain Current (I_D, Tc=100C) | — | [DATA_NEEDED: I_D at Tc=100C] |
| Pulsed Drain Current (I_DM) | — | [DATA_NEEDED: pulsed drain current rating] |
| Maximum Power Dissipation (P_D, Tc=25C) | — | 330 W |
| R_DS(on) Maximum | — | 5.3 mOhm @ V_GS = 10 V |
| Gate Threshold Voltage (V_GS(th)) | — | 2.0 V to 4.0 V |
| Maximum Gate-Source Voltage (V_GS) | — | [DATA_NEEDED: maximum V_GS rating] |
| Operating Junction Temperature (T_J max) | — | 175 C |
| Storage Temperature Range | — | [DATA_NEEDED: storage temperature range] |
| Single Pulse Avalanche Energy (E_AS) | — | [DATA_NEEDED: avalanche energy rating] |
| Thermal Resistance Junction-to-Case (R_theta_JC) | — | [DATA_NEEDED: thermal resistance R_theta_JC] |