ISC060N06NM6ATMA1 vs ISC037N12NM6ATMA1 Сравнение
Подробное сравнение бок о бок ISC060N06NM6ATMA1 от Infineon и ISC037N12NM6ATMA1 от Infineon. Сравните ключевые характеристики, электрические параметры, упаковку, статус жизненного цикла, цены и наличие, чтобы выбрать лучший компонент для ваших требований.
Infineon
ISC060N06NM6ATMA1 - 60V 62A OptiMOS 6 N-Channel MOSFET | Infineon
ISC060N06NM6ATMA1 ✓ АктивенInfineon
ISC037N12NM6ATMA1 - 120V 3.7mOhm N-Channel OptiMOS 6 | Infineon
ISC037N12NM6ATMA1 ✓ АктивенСравнение характеристик
| Параметр | ISC060N06NM6ATMA1 | ISC037N12NM6ATMA1 |
|---|---|---|
| Бренд | Infineon | Infineon |
| Категория | MOSFETs | MOSFETs |
| Статус жизненного цикла | Активен | Активен |
| Наличие | In Stock | In Stock |
| Цена за единицу (USD) | $0,33 | $3,62 |
| Manufacturer | Infineon Technologies | — |
| Series | OptiMOS 6 | — |
| Тип транзистора | N-Channel MOSFET | — |
| Drain-Source Voltage (VDS) | 60 V | — |
| Continuous Drain Current (ID) at Ta | 15.2 A | — |
| Continuous Drain Current (ID) at Tc | 62 A | — |
| Power Dissipation (PD) at Ta | 3 W | — |
| Power Dissipation (PD) at Tc | 50 W | — |
| Корпус | PG-TDSON-8 (TDSON-8) | PG-TDSON-8 FL (SuperSO8) |
| Тип монтажа | Surface Mount | Surface Mount |
| Technology | OptiMOS 6 (60V generation) | OptiMOS 6 (N-channel trench MOSFET) |
| Configuration | Single N-Channel | — |
| Диапазон рабочих температур | -55C to +175C (junction, per OptiMOS 6 family) | -55C to +175C (junction) |
| Gate Drive | Standard gate drive (10 V VGS recommended for full RDS(on)) | — |
| Статус RoHS | Compliant | Compliant |
| Уровень MSL | [DATA_NEEDED: MSL level] | 1 (per JEDEC J-STD-020) |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typ/min/max] | — |
| On-State Resistance RDS(on) at VGS=10V | [DATA_NEEDED: RDS(on) max in mohm] | — |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg typ/nC] | — |
| Drain-Source Voltage (Vds) | — | 120 V |
| Continuous Drain Current (Id) at Ta=25C | — | 19.2 A |
| Pulsed Drain Current (Idm) at Tc | — | 163 A |
| On-Resistance Rds(on) typ at Vgs=10V | — | 3.7 mOhm |
| Power Dissipation at Ta | — | 3 W |
| Power Dissipation at Tc | — | 214 W |
| Gate Threshold Voltage (Vgs(th)) | — | [DATA_NEEDED: Vgs(th) value] |
| Gate Charge (Qg) typ | — | [DATA_NEEDED: Qg total] |
| Avalanche Energy Rated | — | Yes (single-pulse) |