ISC060N10NM6ATMA1 vs BSZ096N10LS5ATMA1 Сравнение
Подробное сравнение бок о бок ISC060N10NM6ATMA1 от Infineon и BSZ096N10LS5ATMA1 от Infineon. Сравните ключевые характеристики, электрические параметры, упаковку, статус жизненного цикла, цены и наличие, чтобы выбрать лучший компонент для ваших требований.
Infineon
ISC060N10NM6ATMA1 - 100V 97A OptiMOS 6 N-Channel MOSFET | Infineon
ISC060N10NM6ATMA1 ✓ АктивенInfineon
BSZ096N10LS5ATMA1 - 100V 9.6mΩ OptiMOS 5 N-Channel MOSFET | Infineon
BSZ096N10LS5ATMA1 ✓ АктивенСравнение характеристик
| Параметр | ISC060N10NM6ATMA1 | BSZ096N10LS5ATMA1 |
|---|---|---|
| Бренд | Infineon | Infineon |
| Категория | MOSFETs | MOSFETs |
| Статус жизненного цикла | Активен | Активен |
| Наличие | In Stock | In Stock |
| Цена за единицу (USD) | $1,43 | $0,94 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | OptiMOS 6 100 V | — |
| Тип транзистора | N-Channel MOSFET | — |
| Drain-Source Voltage (VDS) | 100 V | — |
| Continuous Drain Current (ID) at Ta | 15 A | — |
| Continuous Drain Current (ID) at Tc | 97 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | — |
| Drain-Source On-Resistance (RDS(on)) | 6 mΩ at VGS = 10 V, ID = 25 A | — |
| Gate-Source Threshold Voltage (VGS(th)) | 3.3 V (typical) | — |
| Gate Charge (Qg) | [DATA_NEEDED: total gate charge] | — |
| Power Dissipation (PD) at Ta | 3 W | — |
| Power Dissipation (PD) at Tc | 125 W | — |
| Диапазон рабочих температур | -55 °C to +175 °C (TJ) | -55 °C to +150 °C (junction) |
| Корпус | PG-TDSON-8 FL (5.15 x 6.15 mm) | PG-TSDSON-8-FL (PQFN 3.3 x 3.3 mm) |
| Тип монтажа | Surface Mount | Surface Mount |
| Technology | OptiMOS 6 (thin-wafer trench) | OptiMOS 5 trench MOSFET |
| Polarity | N-Channel | N-Channel |
| Статус RoHS | Compliant | Compliant |
| Уровень MSL | 1 (per JEDEC J-STD-020) | — |
| Product Family | — | OptiMOS 5 |
| Drain-Source Voltage (VDS max) | — | 100 V |
| Gate-Source Voltage (VGS max) | — | 20 V (typical) |
| Continuous Drain Current (ID, TC=25 °C) | — | 40 A |
| Maximum Silicon Drain Current (ID max) | — | 62 A |
| Pulse Drain Current (ID,pulse) | — | 160 A |
| On-Resistance RDS(on) max | — | 9.6 mΩ at VGS=10 V |
| Total Power Dissipation (Ptot, TC=25 °C) | — | 69 W |
| Gate Threshold Voltage VGS(th) | — | Logic-level (low single-volt range) |
| Diode Continuous Forward Current (IS) | — | 40 A (TC=25 °C) |
| Diode Forward Voltage (VSD) | — | 0.85 V typ, 1.2 V max at IF=20 A |
| Gate Drive | — | Logic-level compatible |
| ESD Protection | — | Yes (gate-integrated) |
| Packaging Code | — | ATMA1 (tape and reel) |