MRF6S9130HSR3 vs MRFE6S9160HR3 Сравнение
Подробное сравнение бок о бок MRF6S9130HSR3 от NXP Semiconductors и MRFE6S9160HR3 от NXP Semiconductors. Сравните ключевые характеристики, электрические параметры, упаковку, статус жизненного цикла, цены и наличие, чтобы выбрать лучший компонент для ваших требований.
NXP Semiconductors
MRF6S9130HSR3 - 27W 880MHz RF Power MOSFET | NXP Semiconductors
MRF6S9130HSR3 ✓ АктивенСравнение характеристик
| Параметр | MRF6S9130HSR3 | MRFE6S9160HR3 |
|---|---|---|
| Бренд | NXP Semiconductors | NXP Semiconductors |
| Категория | MOSFETs | MOSFETs |
| Статус жизненного цикла | Активен | Активен |
| Наличие | In Stock | In Stock |
| Цена за единицу (USD) | $65,00 | $25,20 |
| Manufacturer | NXP Semiconductors (formerly Freescale) | NXP Semiconductors |
| Part Status | Active | — |
| Тип транзистора | Lateral N-Channel RF Power MOSFET (LDMOS) | N-Channel Enhancement-Mode Lateral MOSFET |
| Operating Frequency | 880 MHz | — |
| Drain-Source Voltage (Vdss) Max | 68 V | — |
| Drain Current (Id) Max | [DATA_NEEDED: maximum pulsed drain current] | — |
| Typical Quiescent Current (Idq) | 950 mA | — |
| Drain-Source On Resistance (Rds(on)) | [DATA_NEEDED: Rds(on) value] | — |
| Output Power (Pout) Avg | 27 W (N-CDMA single-carrier) | — |
| Power Gain (Gps) | 19.2 dB typical | — |
| Drain Efficiency | [DATA_NEEDED: drain efficiency figure] | 32.4% (typical, N-CDMA, 880 MHz) |
| Supply Voltage (Vdd) Recommended | 28 V | — |
| Корпус / Типоразмер | NI-780S (CASE 465-06, Style 1) ceramic flange | NI-780H-2L (ceramic/metal air-cavity flange-mount) |
| Тип монтажа | Chassis / flange mount with screw-down | Chassis / Flange mount (through-hole RF leads) |
| Диапазон рабочих температур | [DATA_NEEDED: Tj operating range] | -40C to +150C (junction) |
| Storage Temperature Range | [DATA_NEEDED: Tstg range] | — |
| Число выводов | 3 | — |
| Style | Style 1 | — |
| Technology | LDMOS (laterally diffused MOS) | HV6E lateral MOSFET (LDMOS-like) |
| Статус RoHS | Compliant | Compliant |
| Lead-Free | Yes | Yes |
| Packing | Tape & Reel (HSR3 suffix) | — |
| Primary Applications | N-CDMA, GSM, GSM EDGE base station PAs, 880-960 MHz multicarrier amplifiers | — |
| Drain-Source Voltage (V DSS) | — | 70 V (max) |
| Drain Current (continuous) | — | [DATA_NEEDED: typical drain current at TC=25C] |
| Operating Frequency Range | — | 865 MHz to 960 MHz |
| Test Frequency | — | 880 MHz |
| Drain Supply Voltage (V DD) | — | 28 V (typical) |
| Output Power (Average) | — | 35 W (single-carrier N-CDMA, 880 MHz) |
| Output Power (PEP) | — | [DATA_NEEDED: PEP at specified conditions] |
| Power Gain (G ps / G p) | — | 21 dB (typical at 880 MHz) |
| Storage Temperature | — | [DATA_NEEDED: storage temperature] |
| Thermal Resistance (R thJC) | — | [DATA_NEEDED: thermal resistance junction-to-case] |
| Input Match | — | Internally matched input (broadband) |
| Уровень MSL | — | Not applicable (non-SMD air-cavity package) |