MRF8S21200HR6 vs MRF8HP21130HSR3 Сравнение
Подробное сравнение бок о бок MRF8S21200HR6 от NXP Semiconductors и MRF8HP21130HSR3 от NXP Semiconductors. Сравните ключевые характеристики, электрические параметры, упаковку, статус жизненного цикла, цены и наличие, чтобы выбрать лучший компонент для ваших требований.
NXP Semiconductors
MRF8S21200HR6 - 48W RF Power LDMOS MOSFET | NXP | LTE Base Station
MRF8S21200HR6 ✓ АктивенNXP Semiconductors
MRF8HP21130HSR3 - 28W RF Power MOSFET, 2110-2170 MHz | NXP
MRF8HP21130HSR3 ✓ АктивенСравнение характеристик
| Параметр | MRF8S21200HR6 | MRF8HP21130HSR3 |
|---|---|---|
| Бренд | NXP Semiconductors | NXP Semiconductors |
| Категория | MOSFETs | MOSFETs |
| Статус жизненного цикла | Активен | Активен |
| Наличие | In Stock | In Stock |
| Цена за единицу (USD) | $62,00 | $53,10 |
| Тип транзистора | LDMOS (Dual), N-Channel Enhancement-Mode Lateral MOSFET | — |
| Frequency | 2.11 GHz to 2.17 GHz (2110-2170 MHz) | — |
| Test Voltage | 28 V | — |
| Test Current | 1.4 A | — |
| Power Gain | 18.1 dB | — |
| Output Power (Average) | 48 W | — |
| Drain-Source Voltage (Max) | 65 V | — |
| Configuration | Common Source, 2 elements | — |
| Case Connection | Source | — |
| Тип монтажа | Surface Mount (NI-1230 ceramic flange) | — |
| Корпус | NI-1230 | — |
| Application | W-CDMA, LTE base station power amplifiers | — |
| Class of Operation | Class AB, Class C | — |
| Surface Mount | Yes | — |
| Статус RoHS | Compliant | — |
| Manufacturer | — | NXP Semiconductors (formerly Freescale Semiconductor) |
| Part Number | — | MRF8HP21130HSR3 |
| Device Type | — | Lateral N-Channel RF Power MOSFET |
| Application Band | — | 2110 - 2170 MHz (W-CDMA / LTE) |
| Drain Voltage (VDD) | — | 28 V |
| Output Power (Average, W-CDMA / LTE) | — | 28 W |
| Power Gain (typ.) | — | 14 dB |
| Drain Current (test condition) | — | 360 mA |
| Operating Frequency (f) | — | 2.17 GHz (max in band) |
| Architecture | — | In-package Doherty (two-stage) |
| Корпус / Типоразмер | — | NI-780S-4 (air-cavity ceramic) |
| Способ монтажа | — | Flange mount, screw-down |
| Bias Class | — | Class AB / Class C capable |
| Modulation Support | — | W-CDMA, LTE |
| RoHS | — | Compliant |
| Lead-Free | — | Yes |
| Рабочая температура | — | -40C to +150C (junction) |
| Datasheet Document | — | MRF8HP21130H datasheet (NXP) |