UCC21530Q-Q1 vs UCC21550Q-Q1 Сравнение
Подробное сравнение бок о бок UCC21530Q-Q1 от Texas Instruments и UCC21550Q-Q1 от Texas Instruments. Сравните ключевые характеристики, электрические параметры, упаковку, статус жизненного цикла, цены и наличие, чтобы выбрать лучший компонент для ваших требований.
Сравнение характеристик
| Параметр | UCC21530Q-Q1 | UCC21550Q-Q1 |
|---|---|---|
| Бренд | Texas Instruments | Texas Instruments |
| Категория | Power MOSFET Drivers | Power MOSFET Drivers |
| Статус жизненного цикла | Активен | Активен |
| Наличие | In Stock | In Stock |
| Цена за единицу (USD) | $2,10 | $2,10 |
| Output Peak Current (Source) | 4 A | — |
| Output Peak Current (Sink) | 6 A | — |
| Isolation Rating | 5.7 kVRMS (reinforced) | 5000 Vrms (reinforced) |
| Channel-to-Channel Spacing | 3.3 mm | — |
| CMTI (Common-Mode Transient Immunity) | 125 V/ns (minimum) | — |
| Maximum Switching Frequency | 5 MHz | — |
| Number of Channels | 2 | 2 |
| Configuration | Low-side, high-side, half-bridge, dual low-side | — |
| Dead Time | Programmable via DT pin resistor | — |
| Вывод разрешения | Yes | — |
| Input Threshold | TTL and CMOS compatible | — |
| Driven Device Types | IGBT, Si MOSFET, SiC MOSFET | — |
| Qualification | AEC-Q100 (automotive) | — |
| Корпус | SOIC-14 (DWK) | 16-SOIC (DW) |
| Тип монтажа | Surface Mount | Surface Mount |
| Supply Voltage VDDI | [DATA_NEEDED: VDDI range] | — |
| Рабочая температура | [DATA_NEEDED: temperature range] | -40C to +150C |
| Статус RoHS | Compliant | Compliant |
| Product Type | — | Reinforced isolated dual-channel gate driver |
| Peak Source Current | — | 4 A |
| Peak Sink Current | — | 6 A |
| Isolation Technology | — | Capacitive coupling |
| Configurations | — | Dual low-side, dual high-side, or half-bridge |
| Programmable Dead Time | — | Yes (single resistor) |
| Target Transistors | — | Power MOSFET, SiC, GaN, IGBT |
| Automotive Qualification | — | AEC-Q100 qualified (Q1) |
| Disable Function | — | Yes |
| Напряжение питания | — | [DATA_NEEDED: VDD range] |