2ED2304S06F - 650V Half-Bridge Gate Driver IC | Infineon
Артикул: 2ED2304S06F ✓ Активен| Кол-во | Цена за ед. | Итого |
|---|---|---|
| 1 | $2.1 | $2,10 |
| 10 | $1.85 | $18,50 |
| 100 | $1.55 | $155,00 |
| 500 | $1.3 | $650,00 |
| 1.000 | $1.12 | $1.120,00 |
| 2.500 | $0.98 | $2.450,00 |
2ED2304S06F Обзор
A half-bridge gate driver is a power-management semiconductor that converts low-power logic-level PWM signals from a microcontroller or analog controller into the high-current gate-drive signals required to switch power transistors in a half-bridge topology. By integrating the high-side bootstrap diode, the 2ED2304S06F eliminates a discrete component and reduces BOM cost in offline and motor-drive designs. As part of the broader gate-driver IC family, it sits in the power-management IC hierarchy alongside low-side drivers, isolated gate drivers, and full-bridge drivers.
Key features include 650 V transient withstand voltage on the high-side floating supply, Schmitt-trigger logic inputs compatible with 3.3 V CMOS or LSTTL levels, built-in shoot-through prevention logic (interlock), and matched propagation delay between the high-side and low-side channels for low distortion switching. The output buffer is designed for minimum cross-conduction, and the device exhibits excellent noise immunity thanks to the SOI process. The integrated bootstrap diode supports high-side supply generation with an external bootstrap capacitor.
Typical applications include fan and small HVAC motor drives, appliance motor control (washing machines, refrigerators), low-power solar microinverters, and switched-mode power supply (SMPS) half-bridge stages. The DSO-8 footprint also makes it well suited to compact PCB designs where board area and BOM count are constrained.
Designers should note that proper dead-time insertion and PCB layout for the high-side bootstrap loop are essential for reliable operation. Always observe the recommended bootstrap capacitor value and high-side decoupling network from the manufacturer datasheet. This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet.
Аналоги без доработки для 2ED2304S06F — тот же корпус, pin-to-pin совместимость. Компоненты в других корпусах, требующие переработки PCB, исключены.
Варианты в этой серии
Модели той же серии, совместимые без доработки с 2ED2304S06F (тот же форм-фактор и посадочное место) — отличается по Technology.
Инструмент быстрого сравнения — выберите альтернативные компоненты для сравнения бок о бок:
2ED2304S06FXUMA1
✅ Прямая замена✓ В наличии
$0.66 / шт.
Открыть даташит →2ED2104S06F
✅ Прямая замена ⚠️ Характеристики не проверены📋 Справочный аналог (нет в каталоге)
2ED2184S06F
✅ Прямая замена ⚠️ Характеристики не проверены📋 Справочный аналог (нет в каталоге)
2ED020I06-FI
✅ Прямая замена ⚠️ Характеристики не проверены📋 Справочный аналог (нет в каталоге)
2ED2304S06F Максимальные параметры и электрические характеристики
| Product Type | Half-Bridge Gate Driver IC |
| Топология | High-side + Low-side, half-bridge |
| Technology | Infineon thin-film SOI (Silicon-On-Insulator) |
| Maximum Blocking Voltage (High-Side) | 650 V |
| Source Current (typ.) | 0.36 A |
| Sink Current (typ.) | 0.7 A |
| Integrated Bootstrap Diode | Yes |
| Logic Input Compatibility | 3.3 V CMOS / LSTTL (Schmitt trigger with hysteresis, pull-down) |
| Input Pins | LIN (low-side in), HIN (high-side in) |
| Shoot-Through Protection | Built-in interlock logic |
| Корпус | PG-DSO-8-910 (DSO-8) |
| Тип монтажа | Surface Mount |
| Число выводов | 8 |
| Статус RoHS | Compliant |
| Target Power Devices | IGBTs and power MOSFETs |
Конфигурация выводов 2ED2304S06F
| Контакт 1 | LIN — Logic input for low-side gate driver output (LO), in phase. Schmitt trigger with hysteresis and pull-down. |
| Контакт 2 | HIN — Logic input for high-side gate driver output (HO), in phase. Schmitt trigger with hysteresis and pull-down. |
| Контакт 3 | VCC — Low-side supply voltage (typically 12-15 V). |
| Контакт 4 | GND — Ground reference for low-side driver and logic. |
| Контакт 5 | LO — Low-side gate driver output to low-side power switch gate. |
| Контакт 6 | VS — High-side floating supply return (connected to half-bridge switching node). |
| Контакт 7 | HO — High-side gate driver output to high-side power switch gate. |
| Контакт 8 | VB — High-side floating supply (bootstrap supply for HO driver stage). |
Типичное применение
2ED2304S06F подходит для 6 применениеs: Small HVAC Fan Motor Drive, Refrigerator Compressor Drive, Washing Machine Inverter Board, Low-Power Solar Microinverter, SMPS Half-Bridge Stage, Induction Cooktop Resonant Half-Bridge.
Small HVAC Fan Motor Drive
The 2ED2304S06F is well suited to small HVAC fan motor drives because its 650 V high-side blocking rating comfortably covers rectified 230 V AC bus voltages while its 0.36 A source and 0.7 A sink drive currents are sufficient for IGBTs in the 600 V class up to several amperes. The integrated bootstrap diode eliminates a discrete component, reducing BOM count in cost-sensitive appliance designs. The SOI process provides excellent dV/dt noise immunity needed when switching inductive motor windings, and the Schmitt-trigger hysteresis ensures reliable operation from 3.3 V microcontroller PWM outputs. Typical circuit placement is between the microcontroller and the half-bridge IGBT stage, with a 1 uF bootstrap capacitor and 100 nF VCC decoupling.
Рекомендуется
Refrigerator Compressor Drive
Refrigerator compressor drives benefit from the 2ED2304S06F's compact DSO-8 footprint and integrated bootstrap diode, which reduce PCB area in the cramped control-module enclosure. Its 0.36 A source current is enough to drive 600 V/15 A class IGBTs typical of sub-300 W inverter compressors, while the 650 V rating provides margin against compressor winding voltage spikes during back-EMF events. The SOI process noise immunity prevents false triggering in the high-noise environment near the compressor motor. Placed at the interface between the control MCU and the IGBT half-bridge, with a small ferrite bead on VCC for additional supply filtering, this driver delivers reliable long-life operation demanded by white-goods applications.
Рекомендуется
Washing Machine Inverter Board
Washing machine inverter boards use the 2ED2304S06F to drive the IGBT half-bridge that powers the universal motor in variable-frequency wash cycles. The driver's 0.7 A sink current handles the gate charge of typical 600 V/20 A IGBTs in this power class, ensuring fast turn-off and low switching loss. The integrated bootstrap diode and built-in shoot-through interlock simplify firmware by removing the need for external dead-time generation circuits. The DSO-8 package is well matched to the high-density inverter PCB layout where space is at a premium. Typical application uses an MCU-generated 16 kHz PWM, with the driver providing level translation and gate-drive buffering to the IGBT half-bridge.
Рекомендуется
Low-Power Solar Microinverter
Low-power solar microinverters (under 500 W) benefit from the 2ED2304S06F's 650 V rating which handles the boosted DC bus voltage from a 30 to 60 V panel input pushed up to 380 V DC for grid-tie inversion. The driver's SOI process provides the dV/dt immunity needed when the half-bridge switches at 50 to 100 kHz in the noisy environment of a switching power supply. The integrated bootstrap diode reduces BOM count, important for cost-competitive microinverter designs. Place the driver adjacent to the high-side and low-side MOSFETs, with a 1 to 4.7 uF bootstrap capacitor sized for the switching frequency and duty cycle.
Рекомендуется
SMPS Half-Bridge Stage
Switched-mode power supplies (SMPS) using a half-bridge topology at 110/230 V AC input rely on the 2ED2304S06F for primary-side IGBT or MOSFET gate driving. The 650 V rating handles the rectified 325 V DC bus plus ringing margin, while the 0.36 A source current drives typical 600 V/10 A MOSFETs used in sub-500 W SMPS designs. The integrated bootstrap diode simplifies the high-side supply generation - traditionally a separate high-voltage diode plus resistor network. The driver's built-in shoot-through prevention prevents cross-conduction that would otherwise damage the half-bridge. Use a 1 to 4.7 uF bootstrap capacitor and a 100 nF local VCC bypass for stable operation.
Рекомендуется
Induction Cooktop Resonant Half-Bridge
Induction cooktop resonant topologies operating at 20 to 100 kHz benefit from the 2ED2304S06F's 650 V rating and SOI noise immunity in a high-dV/dt switching environment. The 0.7 A sink current is sufficient to drive the gate charge of typical 1200 V IGBTs used in cooktop half-bridge resonant stages at these frequencies. The integrated bootstrap diode simplifies the high-side supply design, reducing component count on the cooktop PCB where thermal management is already constrained. Place the driver close to the gate resistors of the IGBT half-bridge, with the bootstrap capacitor sized for the resonant switching frequency and minimum duty cycle.
Рекомендуется
Сводка рекомендуемых товаров
Справочные инженерные данные для 2ED2304S06F — сравнение, рекомендации по проектированию и информация о соответствии.
Руководство по выбору
Сравнение с аналогами
| Параметр | Этот товар | 2ED2304S06FXUMA1 | 2ED2104S06F | 2ED2184S06F | 2ED020I06-FI |
|---|---|---|---|---|---|
| Package | PG-DSO-8-910 (DSO-8) | PG-DSO-8-910 (DSO-8) - same | PG-DSO-8-910 (DSO-8) - same | PG-DSO-8-910 (DSO-8) - same | DSO-8 - same |
| Brand | Infineon | Infineon | Infineon | Infineon | Infineon |
| Blocking Voltage (High-Side) | 650 V | 650 V | 650 V | 650 V | 600 V |
| Source Current (typ.) | 0.36 A | 0.36 A | 0.18 A | 0.25 A | 0.2 A |
| Sink Current (typ.) | 0.7 A | 0.7 A | 0.36 A | 0.5 A | 0.4 A |
| Integrated Bootstrap Diode | Yes | Yes | Yes | Yes | No (external required) |
| Technology | SOI | SOI | SOI | SOI | Junction-Isolated |
| Logic Input Compatibility | 3.3 V CMOS / LSTTL | 3.3 V CMOS / LSTTL | 3.3 V CMOS / LSTTL | 3.3 V CMOS / LSTTL | TTL/CMOS |
Ключевые отличия
- Integrated bootstrap diode reduces BOM (против 2ED020I06-FI)
- SOI technology provides superior noise immunity (против 2ED020I06-FI)
- Higher drive current for fast IGBT switching (против 2ED2104S06F)
Заметки по проектированию
Bootstrap capacitor sizing is critical for high-side driver operation. For switching frequencies around 20 kHz, use a 1 uF to 4.7 uF ceramic or electrolytic capacitor between VB and VS. The capacitor must be sized to hold VBS above the UVLO threshold (typically around 8-9 V) during the longest high-side on-time. If the high-side on-time is short (high duty cycle on low-side), a smaller bootstrap capacitor may suffice. Always include a small bootstrap diode (or use the integrated one) to charge the capacitor when VS pulls low.
PCB layout for gate-driver ICs requires careful attention to the high-side floating supply loop. Keep the bootstrap capacitor (VB to VS) as close as possible to pins 7 and 8 to minimize parasitic inductance. Place a 100 nF ceramic decoupling capacitor directly at VCC (pin 3) with the ground return to pin 4 (GND) using a short, wide trace. The HO and LO gate-drive traces should be kept short and routed away from the VS switching node to minimize capacitive coupling.
The high-side VS pin is connected to the half-bridge switching node, which has fast dV/dt transitions. To prevent noise injection into the high-side driver, place the bootstrap capacitor return (VS) directly at the source of the high-side switch. A small RC snubber (10 ohm + 1 nF) across the half-bridge can reduce dV/dt stress on both the driver and the bootstrap diode. Avoid long ground return paths - the driver GND (pin 4) should connect directly to the power ground at the low-side switch source.
Информация о соответствии
RoHS compliant per Infineon product page. AEC-Q100 not applicable - this is a driver IC for power switches, not an automotive-qualified part itself. End-system automotive qualification requires the surrounding circuit to be qualified.
