AFT26P100-4WSR3 - 22W 2.6GHz Doherty RF LDMOS | NXP
Артикул: AFT26P100-4WSR3 ✓ Активен| Кол-во | Цена за ед. | Итого |
|---|---|---|
| 1 | $135.86 | $135,86 |
| 10 | $122.27 | $1.222,70 |
| 100 | $108.69 | $10.869,00 |
| 500 | $95.1 | $47.550,00 |
| 1.000 | $88.81 | $88.810,00 |
AFT26P100-4WSR3 Обзор
An RF power LDMOS (Laterally Diffused Metal-Oxide Semiconductor) transistor is a specialized power MOSFET designed to deliver high RF output power with excellent gain and efficiency in the VHF/UHF/microwave bands. LDMOS technology is the dominant solution for cellular base station power amplifiers because it combines high breakdown voltage, good linearity, and a favorable cost-per-watt ratio. Within the RF power transistor hierarchy, the AFT26P100-4WSR3 belongs to NXP's Airfast family, which sits at the high-power end of the cellular infrastructure market and is targeted at macro-cell Doherty amplifier final stages.
Key features include 22 W average output power under Doherty operation, 15.1 dB typical power gain, dual-channel symmetrical device geometry that simplifies Doherty combiner design, and a 65 V maximum drain-source voltage rating for robust operation into high VSWR loads. The NI-780S-4 ceramic package provides low thermal resistance and is designed for direct bolt-down mounting on a heatsink or thermal spreader. The symmetrical two-section transistor layout enables easy implementation of a two-way Doherty amplifier with main and peak paths on a single die pair.
Architecturally, the device is an N-channel enhancement-mode lateral MOSFET fabricated on NXP's high-volume LDMOS process, with internal input and output pre-matching to reduce external matching component count. The high gain and wide instantaneous bandwidth make it particularly suitable for multi-carrier GSM, WCDMA, and LTE base station applications operating in the 2.6 GHz band (Band 38, Band 41, and similar TDD allocations).
Typical applications include 4G LTE and 5G NR massive-MIMO base station final-stage Doherty amplifiers, multi-carrier GSM/EDGE power amplifiers, and Doherty driver stages in macro-cell base station radios covering the 2496-2690 MHz range. It is also used as a building block in small-cell and remote-radio-head (RRH) transmit chains that require high power density in a compact footprint.
Designers should pay particular attention to PCB thermal management: the NI-780S-4 package requires a robust thermal interface (thermal compound or solder preform) and a low-thermal-resistance heatsink to keep the junction below 200 C at full 22 W average output. Proper bias sequencing and a regulated gate supply are required to avoid thermal runaway during Doherty operation.
This page synthesizes distributor pricing, verified drop-in alternatives, and practical design notes not found in the manufacturer datasheet alone.
Аналоги без доработки для AFT26P100-4WSR3 — тот же корпус, pin-to-pin совместимость. Компоненты в других корпусах, требующие переработки PCB, исключены.
Инструмент быстрого сравнения — выберите альтернативные компоненты для сравнения бок о бок:
AFT26P100-4WGSR3
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AFT26P100-4WSR3,128
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AFT26P100-4WGSR3,128
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AFT26P100-4WSR3-NXP
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AFT26P100-4WSR3 Максимальные параметры и электрические характеристики
| Manufacturer | NXP Semiconductors (formerly Freescale) |
| Product Family | Airfast RF Power LDMOS |
| Тип транзистора | N-Channel Enhancement-Mode Lateral MOSFET (LDMOS, Dual) |
| Configuration | Symmetrical Doherty, Dual-section |
| Frequency Range | 2496 MHz to 2690 MHz |
| Test Frequency | 2.69 GHz |
| Drain Voltage (Vds) | 28 V (typical), 65 V (maximum rating) |
| Average Output Power | 22 W (Doherty) |
| Power Gain | 15.1 dB (typical at 200 mA) |
| Test Quiescent Current (Idq) | 200 mA |
| Корпус | NI-780S-4 (NI-780S-6 variant), ceramic air-cavity |
| Тип монтажа | Surface Mount / Chassis Mount (bolt-down) |
| Technology | LDMOS, lateral diffused |
| Operating Mode | Class AB / Doherty |
| Polarity | N-Channel |
Конфигурация выводов AFT26P100-4WSR3
| Контакт 1 | RFIN (Gate 1) — RF input / Gate bias for section 1 (main path) |
| Контакт 2 | GATE1 — Gate bias feed for main path |
| Контакт 3 | DRAIN1 / VDD — Drain supply for main path (28 V typical) |
| Контакт 4 | RFOUT / Drain combined — RF output (combined drain of both sections) |
| Контакт 5 | DRAIN2 / VDD — Drain supply for peak path (28 V typical) |
| Контакт 6 | GATE2 — Gate bias feed for peak path |
| Контакт 7 | FLANGE — Ground / Thermal pad (bolt-down to heatsink) |
DC Область безопасной работы (LDMOS)
Типичное применение
AFT26P100-4WSR3 подходит для 6 применениеs: 4G LTE Base Station Final Stage, 5G NR Massive-MIMO Radio, Multi-Carrier GSM/EDGE Power Amplifier, Remote Radio Head (RRH) Transmit Chain, Small Cell Base Station PA, Doherty Amplifier Reference Design.
4G LTE Base Station Final Stage
The AFT26P100-4WSR3 is designed as the final-stage power amplifier for 4G LTE base stations operating in the 2496-2690 MHz band (Band 38, Band 41, and other TDD allocations). Its 22 W average output power under Doherty operation is matched to the per-sector power needs of macro-cell LTE radios. The 15.1 dB gain reduces driver chain complexity, while the high instantaneous bandwidth supports multi-carrier LTE carrier aggregation across the 194 MHz of spectrum in Band 41. The NI-780S-4 ceramic package provides the thermal performance required for continuous 22 W operation at 28 V with proper thermal interface material. Designers typically pair the AFT26P100-4WSR3 with NXP's Airfast driver-stage devices for a complete transmit chain.
Рекомендуется
5G NR Massive-MIMO Radio
For 5G NR massive-MIMO base station radios operating in the 2.6 GHz n41 band, the AFT26P100-4WSR3 serves as the final-stage power amplifier per radio chain in 32T32R or 64T64R antenna arrays. Its Doherty-optimized linearity and high efficiency at back-off power levels match the high peak-to-average ratio of 5G NR OFDMA signals. The 22 W average output per device allows array-level power combining to reach the 100-200 W total radiated power per antenna panel. The wide instantaneous bandwidth supports the full 194 MHz n41 channel bandwidth without retuning. NXP's Airfast family is widely deployed in commercial 5G NR radio units from major OEMs.
Рекомендуется
Multi-Carrier GSM/EDGE Power Amplifier
The AFT26P100-4WSR3 supports multi-carrier GSM and EDGE base station power amplifiers operating in the 2.6 GHz band, though GSM deployments in this band are less common than in sub-1 GHz. The device's high gain (15.1 dB) and Doherty efficiency make it well-suited for the high PAR (peak-to-average ratio) of multi-carrier GSM signals where efficiency at back-off is critical. The 28 V operation matches standard cellular infrastructure supply rails. Designers should ensure the bias network is configured for the linear Doherty region required for EDGE modulation. NXP characterizes the AFT26P100-4WSR3 specifically for multi-carrier scenarios in the datasheet.
Рекомендуется
Remote Radio Head (RRH) Transmit Chain
Remote Radio Heads (RRHs) for cellular base stations require compact, high-efficiency power amplifiers that can be mounted close to the antenna to minimize feeder losses. The AFT26P100-4WSR3 is well-suited for RRH transmit chains operating in the 2.6 GHz band due to its compact NI-780S-4 ceramic package, 28 V supply compatibility, and Doherty-optimized efficiency. The high gain reduces the size and power consumption of the driver chain, allowing more compact RRH designs. Proper thermal management is essential in the sealed RRH enclosure, and the NI-780S-4 package's low thermal resistance enables direct heatsink mounting. NXP's Airfast family is widely used in commercial RRH products.
Рекомендуется
Small Cell Base Station PA
Small cell base stations for 4G LTE and 5G NR in the 2.6 GHz band benefit from the AFT26P100-4WSR3's combination of moderate power (22 W average), high gain, and Doherty efficiency. The device enables compact small-cell radio designs where PCB area and thermal dissipation are at a premium. Its wide instantaneous bandwidth supports the full n41 channel without band-specific tuning. Designers can use a single AFT26P100-4WSR3 per small-cell sector at lower power levels (backing off from the 22 W maximum) for high efficiency. The NI-780S-4 package footprint is compatible with standard small-cell PCB layouts used across the Airfast family.
Рекомендуется
Doherty Amplifier Reference Design
The AFT26P100-4WSR3 is featured in NXP's reference designs for Doherty power amplifiers targeting the 2496-2690 MHz band. The symmetrical dual-channel device geometry is specifically designed for Doherty operation with the main path on one section and the peak path on the other. Reference design collateral typically includes PCB layout files, matching network component values, bias sequencing recommendations, and thermal management guidance. Engineers designing Doherty amplifiers from scratch can leverage NXP's reference designs to accelerate development. The combination of AFT26P100-4WSR3 (main) and AFT26P100-4WGSR3 (peak) is a standard pairing for balanced Doherty implementation.
Рекомендуется
Сводка рекомендуемых товаров
Справочные инженерные данные для AFT26P100-4WSR3 — сравнение, рекомендации по проектированию и информация о соответствии.
Руководство по выбору
Сравнение с аналогами
| Параметр | Этот товар | AFT26P100-4WGSR3 | AFT26P100-4WSR3,128 | AFT26P100-4WGSR3,128 | AFT26P100-4WSR3-NXP |
|---|---|---|---|---|---|
| Package | NI-780S-4 | NI-780S (WGSR3 variant) - same family | NI-780S-4 - same | NI-780S (WGSR3 variant) - same family | NI-780S-4 - same |
| Brand | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors |
| Output Power (Pavg) | 22 W | 22 W | 22 W | 22 W | 22 W |
| Frequency Range | 2496-2690 MHz | 2496-2690 MHz | 2496-2690 MHz | 2496-2690 MHz | 2496-2690 MHz |
| Drain Voltage (Vds) | 28 V (65 V max) | 28 V (65 V max) | 28 V (65 V max) | 28 V (65 V max) | 28 V (65 V max) |
| Power Gain | 15.1 dB | 15.1 dB | 15.1 dB | 15.1 dB | 15.1 dB |
| Test Idq | 200 mA | 200 mA | 200 mA | 200 mA | 200 mA |
| Configuration | Symmetrical Doherty, dual-section | Symmetrical Doherty, dual-section | Symmetrical Doherty, dual-section | Symmetrical Doherty, dual-section | Symmetrical Doherty, dual-section |
Ключевые отличия
- Symmetrical Doherty dual-section design on a single die (против AFT18HW355SR6)
- Wide instantaneous bandwidth over 194 MHz (2496-2690 MHz) (против AFT09S220-02NR3)
- Airfast family ecosystem with matched companion parts (против MRF8P26080HSR3)
Заметки по проектированию
The NI-780S-4 ceramic package requires direct bolt-down mounting on a heatsink or thermal spreader with thermal compound or a solder preform. At 22 W average output and 28 V supply, the device dissipates substantial power, and junction temperature must remain below 200 C for reliable long-term operation. Design the PCB cutout so the package flange sits flush against the heatsink with no air gaps. Use a thermal camera or thermocouple to verify the heatsink temperature stays within the datasheet-specified limits during Doherty operation.
The RF input and output traces must be designed as 50-ohm microstrip or stripline with the characteristic impedance matched to the package lead geometry. Use low-loss PCB substrate (Rogers RO4003C or RO4350B) for the RF section to minimize insertion loss at 2.6 GHz. Place the gate bias decoupling capacitors as close to the gate leads as possible, and use a regulated low-noise gate supply (typically -2 to 0 V relative to ground for LDMOS) to avoid bias drift during Doherty operation.
Do not exceed the 65 V absolute maximum drain voltage rating - any overshoot from load transients or bias sequencing faults can permanently damage the LDMOS die. Implement proper gate-drain sequencing (gate applied first, then drain) to avoid in-rush current damage. Do not operate the device without proper RF input matching - reflections can cause voltage standing wave ratios that exceed the device's breakdown limits. Always verify the Doherty combiner phase balance before applying full RF drive power.
Keep the gate and drain bias feed lines physically separated to minimize coupling and ensure amplifier stability. Use via fences around the RF input and output traces to prevent parasitic coupling between stages. The PCB ground plane must be continuous under the RF traces and connected to the package flange ground via multiple low-inductance vias. NXP's reference design layouts demonstrate the recommended grounding and via pattern.
Информация о соответствии
RoHS, REACH, lead-free, and halogen-free status not explicitly listed in verified web data; mark as [DATA_NEEDED] for sourcing decisions. The NI-780S-4 ceramic package with gold-plated leads is typically compliant with major environmental standards, but verify with manufacturer documentation for production designs.
