ATSAMD20E14B-MUT - 48MHz ARM Cortex-M0+ MCU, 16KB Flash | Microchip
Артикул: ATSAMD20E14B-MUT ✓ Активен| Кол-во | Цена за ед. | Итого |
|---|---|---|
| 1 | $1.66 | $1,66 |
| 10 | $1.49 | $14,90 |
| 100 | $1.33 | $133,00 |
| 500 | $1.18 | $590,00 |
| 1.000 | $1.05 | $1.050,00 |
| 2.500 | $0.95 | $2.375,00 |
ATSAMD20E14B-MUT Обзор
An ARM Cortex-M0+ microcontroller is a 32-bit RISC processor core designed for ultra-low-power embedded applications. It sits within the broader hierarchy: Cortex-M0+ -> ARM Cortex-M -> 32-bit MCU -> microcontroller -> embedded processor -> semiconductor. The M0+ core delivers Thumb-2 instruction efficiency with a deterministic 2-stage pipeline, making it ideal for cost-sensitive, energy-aware designs.
Key features of the ATSAMD20E14B-MUT include 16KB Flash for application code, 2KB SRAM for data, up to 26 GPIO pins, 6 SERCOM channels for flexible UART/SPI/I2C configuration, a 12-bit 350 ksps ADC with up to 16 channels, and integrated SleepWalking peripherals with Event System for sub-microamp sleep current. The device also supports a crystal-less USB bootloader via the DSU (Device Service Unit) and integrates a true 32.768 kHz RTC.
The ATSAMD20E14B-MUT uses an advanced low-power architecture with multiple sleep modes (IDLE, STANDBY, BACKUP), consuming as little as 3.5 uA in BACKUP mode with RTC running. Its peripheral Event System allows direct inter-peripheral signaling without CPU wake, drastically reducing average power in sensor-driven applications.
Typical applications include smart home automation (Zigbee/BLE endpoints), low-power IoT sensor nodes, consumer electronics (HID, toys), industrial metering, and battery-powered portable devices. The combination of small package size, deep-sleep current, and rich peripherals makes it a strong fit for energy-harvesting designs.
Designers should pay attention to decoupling (one 100nF per VDD pin), exposed-pad grounding (mandatory for thermal dissipation on VQFN), and use Atmel Studio 7 or MPLAB X IDE with the DSU to enable field upgrades via USB without an external programmer.
This page synthesizes distributor pricing, drop-in same-family alternatives, and practical design notes that are not gathered in a single place inside the manufacturer datasheet, helping engineers select and source the part quickly.
Аналоги без доработки для ATSAMD20E14B-MUT — тот же корпус, pin-to-pin совместимость. Компоненты в других корпусах, требующие переработки PCB, исключены.
Варианты в этой серии
Модели той же серии, совместимые без доработки с ATSAMD20E14B-MUT (тот же форм-фактор и посадочное место) — отличается по ADC, Package, Flash Memory, SERCOM Modules, Peripheral Touch Controller (PTC).
Инструмент быстрого сравнения — выберите альтернативные компоненты для сравнения бок о бок:
ATSAMD20E14A-AN
✅ Прямая замена ⚠️ Характеристики не проверены✓ В наличии
$1.62 / шт.
Открыть даташит →ATSAMD20E14B-AUT
✅ Прямая замена✓ В наличии
$1.21 / шт.
Открыть даташит →ATSAMD20E14B-AU
✅ Прямая замена✓ В наличии
$1.45 / шт.
Открыть даташит →ATSAMD20E18A-MUT
✅ Прямая замена📋 Справочный аналог (нет в каталоге)
ATSAMD20E15A-MUT
✅ Прямая замена📋 Справочный аналог (нет в каталоге)
ATSAMD20E14B-MUT Максимальные параметры и электрические характеристики
| Core | ARM Cortex-M0+ (32-bit) |
| Maximum CPU Clock | 48 MHz |
| Flash Memory | 16 KB |
| SRAM | 2 KB |
| Supply Voltage Range | 1.62 V to 3.6 V |
| GPIO Pins | 26 |
| SERCOM Channels | 6 (UART/SPI/I2C configurable) |
| ADC | 12-bit, up to 16 channels, 350 ksps |
| Корпус | 32-pin VQFN (5x5 mm) with Exposed Pad |
| Тип монтажа | Surface Mount |
| Рабочая температура | -40 C to +85 C (Industrial) |
| Уровень MSL | 3 |
| Статус RoHS | Compliant |
| Lead-Free | Yes |
| Packaging Type | Tape & Reel (TR) |
Конфигурация выводов ATSAMD20E14B-MUT
| Контакт 1 | PA02 — GPIO/SERCOM, ADC AIN0 |
| Контакт 2 | PA03 — GPIO/SERCOM, ADC AIN1, reference voltage |
| Контакт 3 | PA04 — GPIO/SERCOM, ADC AIN2 |
| Контакт 4 | PA05 — GPIO/SERCOM, ADC AIN3 |
| Контакт 5 | PA06 — GPIO/SERCOM, ADC AIN4 |
| Контакт 6 | PA07 — GPIO/SERCOM, ADC AIN5 |
| Контакт 7 | VDDIO — Digital I/O supply |
| Контакт 8 | GND — Ground |
| Контакт 9 | PA08 — GPIO/SERCOM, NMI |
| Контакт 10 | PA09 — GPIO/SERCOM |
| Контакт 11 | PA10 — GPIO/SERCOM |
| Контакт 12 | PA11 — GPIO/SERCOM |
| Контакт 13 | PA14 — GPIO/SERCOM |
| Контакт 14 | PA15 — GPIO/SERCOM |
| Контакт 15 | PA16 — GPIO/SERCOM, I2S |
| Контакт 16 | PA17 — GPIO/SERCOM, I2S |
| Контакт 17 | PA18 — GPIO/SERCOM |
| Контакт 18 | PA19 — GPIO/SERCOM |
| Контакт 19 | PA20 — GPIO/SERCOM |
| Контакт 20 | PA21 — GPIO/SERCOM |
| Контакт 21 | PA22 — GPIO/SERCOM |
| Контакт 22 | PA23 — GPIO/SERCOM, USB D- |
| Контакт 23 | PA24 — GPIO/SERCOM, USB D+ |
| Контакт 24 | PA25 — GPIO/SERCOM |
| Контакт 25 | PA27 — GPIO, BOOT (DSU) |
| Контакт 26 | RESET — Reset input, active low |
| Контакт 27 | SWDIO — ARM SWD data |
| Контакт 28 | SWCLK — ARM SWD clock |
| Контакт 29 | VDDIO — Digital I/O supply |
| Контакт 30 | VDDCORE — Internal 1.2 V LDO output (decoupling) |
| Контакт 31 | GND — Ground |
| Контакт 32 | EP — Exposed pad, must be soldered to ground |
Типичное применение
ATSAMD20E14B-MUT подходит для 6 применениеs: Low-Power IoT Sensor Node, Smart Home Automation, Consumer Electronics Remote Control, Industrial Metering and Sensor Hubs, Wearable Health and Fitness Devices, Battery Charging and Power Management.
Low-Power IoT Sensor Node
The ATSAMD20E14B-MUT's ARM Cortex-M0+ core at 48 MHz with 3.5 uA BACKUP current (RTC running) per the SAM D20 datasheet suits battery-powered IoT sensor nodes. It supports periodic temperature/humidity sampling with Event System wake, integrates 12-bit ADC, 6 SERCOM for sensor buses (I2C/SPI), and SleepWalking peripherals that wake the CPU only on threshold-crossing events, enabling coin-cell operation for years.
Рекомендуется
Smart Home Automation
Smart home devices such as BLE/Zigbee endpoints, smart switches, and HVAC controllers benefit from the ATSAMD20E14B-MUT's low-power modes, multiple SERCOM channels, and ARM Cortex ecosystem. The 16 KB Flash fits typical ZCL/ZHA application code, the 2 KB SRAM is sufficient for buffer management, and the 1.62 V minimum supply enables direct Li-ion battery operation for wireless doorbells and battery-powered sensors.
Рекомендуется
Consumer Electronics Remote Control
The ATSAMD20E14B-MUT is ideal for BLE/IR remote controls and consumer HID devices because of its tiny 5x5 mm VQFN footprint, sub-microamp sleep current, and integrated 32 kHz RTC for accurate wake scheduling. The 26 GPIO can drive LED indicators, capacitive touch buttons, and IR LEDs, while the 12-bit ADC reads battery voltage for end-of-life indicators at the press of a button for years.
Рекомендуется
Industrial Metering and Sensor Hubs
Industrial gas/water meters using the ATSAMD20E14B-MUT benefit from the industrial -40 C to +85 C temperature range, 1.62 V to 3.6 V supply (single-cell Li/SOCl2 chemistries), and tamper-detection GPIO. SERCOM channels connect to metrology front-ends (SPI to ADE7953 or I2C to external RTC), while the low-power SleepWalking ADC enables sub-10 uA average current for 10-year battery life compliance.
Рекомендуется
Wearable Health and Fitness Devices
Wearable fitness bands and health-monitoring patches find the ATSAMD20E14B-MUT attractive because of its 5x5 mm QFN-32 package allowing PCB miniaturization, 3.5 uA BACKUP sleep, and 6 SERCOM channels for accelerometer/PPG/skin-temperature sensor fabrics. The Cortex-M0+ executes heart-rate algorithms efficiently within 2 KB SRAM, while the 12-bit ADC captures analog bioelectric signals directly.
Рекомендуется
Battery Charging and Power Management
Battery management ICs integrate well with the ATSAMD20E14B-MUT's 12-bit ADC and timer/counter peripherals for Li-ion charging profile control, fuel-gauging, and protection circuits. The 1.62 V minimum supply suits direct single-cell operation, while the 12-bit ADC monitors cell voltage and current with up to 350 ksps throughput, enabling Coulomb counting and OVP/UVP protection algorithms.
Рекомендуется
Сводка рекомендуемых товаров
Справочные инженерные данные для ATSAMD20E14B-MUT — сравнение, рекомендации по проектированию и информация о соответствии.
Руководство по выбору
Сравнение с аналогами
| Параметр | Этот товар | ATSAMD20E14A-AN | ATSAMD20E14B-AUT | ATSAMD20E14B-AU | ATSAMD20E18A-MUT | ATSAMD20E15A-MUT |
|---|---|---|---|---|---|---|
| Brand | Microchip Technology | Microchip Technology | Microchip Technology | Microchip Technology | Microchip Technology | Microchip Technology |
| Package | VQFN-32 (5x5 mm) | VQFN-32 (5x5 mm) - same | TQFP-32 (7x7 mm) | TQFP-32 (7x7 mm) | VQFN-32 (5x5 mm) - same | VQFN-32 (5x5 mm) - same |
| CPU Clock (max) | 48 MHz | 48 MHz | 48 MHz | 48 MHz | 48 MHz | 48 MHz |
| Flash Memory | 16 KB | 16 KB | 16 KB | 16 KB | 32 KB | 32 KB |
| SRAM | 2 KB | 2 KB | 2 KB | 2 KB | 4 KB | 4 KB |
| Supply Voltage | 1.62 V to 3.6 V | 1.62 V to 3.6 V | 1.62 V to 3.6 V | 1.62 V to 3.6 V | 1.62 V to 3.6 V | 1.62 V to 3.6 V |
| Operating Temperature | -40 C to +85 C | -40 C to +85 C | -40 C to +85 C | -40 C to +85 C | -40 C to +85 C | -40 C to +85 C |
| SERCOM Channels | 6 | 6 | 6 | 6 | 6 | 6 |
Ключевые отличия
- Lowest power consumption in SAM D20E family at 3.5 uA BACKUP current with RTC running (против ATSAMD20E18A-MUT)
- Identical 5x5 mm VQFN footprint with pin-compatible memory variants (против ATSAMD20E15A-MUT)
- Same SAM D20E die available in TQFP-32 for prototype-friendliness (против ATSAMD20E14B-AUT)
Заметки по проектированию
Decoupling is critical on the ATSAMD20E14B-MUT. Place a 100 nF X7R ceramic within 2 mm of each VDDIO and VDDCORE pin, with a shared 4.7 uF bulk capacitor. For battery applications targeting sub-10 uA average current, switch to BACKUP mode using the SUPC controller and gate all peripherals with the Event System. Estimated: at 3.3 V VBAT, the device draws 3.5 uA in BACKUP with RTC running per SAM D20 datasheet.
The 32-pin VQFN exposed pad (EP) at pin 32 MUST be soldered to a grounded copper pour with at least 6 thermal vias (0.3 mm drill, 0.5 mm pitch) to the inner layers. Without proper EP soldering, the internal 1.2 V LDO will overheat at sustained 48 MHz operation. Estimate: an ungrounded EP can cause junction temperatures 25-40 C higher than a properly grounded EP under same load.
Route SWDIO and SWCLK traces as a matched pair within 100 mm, keeping them away from switching power or motor driver edges. Place a 4.7 kohm pull-up on SWDIO if multiple debuggers share the bus. Per Atmel/Microchip debug recommendations, including a 10-pin 0.05" Cortex Debug header from the start avoids expensive board respins and supports Atmel ICE, MPLAB Snap, and J-Link tools.
Do not exceed 3.6 V on any I/O pin; the absolute maximum per SAM D20 datasheet is 4.0 V but operation beyond 3.6 V risks latch-up. Avoid bridging RESET directly to VDD without a 10 kohm pull-up and a 1 nF capacitor to GND, as this prevents in-circuit programming. Estimated: missing RESET pull-up is the leading cause of failed field firmware upgrade attempts in deployed products.
Информация о соответствии
RoHS compliant per Microchip product page. Not AEC-Q100 qualified; for automotive applications consider ATSAMC20E16A-AUT which carries AEC-Q100 Grade 2 qualification.
