C3M0016120K - 1200V 16mΩ SiC MOSFET 115A TO-247-4 | Wolfspeed
Артикул: C3M0016120K ✓ Активен| Кол-во | Цена за ед. | Итого |
|---|---|---|
| 1 | $31.39 | $31,39 |
| 10 | $29.1 | $291,00 |
| 100 | $26.5 | $2.650,00 |
| 500 | $23.8 | $11.900,00 |
| 1.000 | $21.2 | $21.200,00 |
C3M0016120K Обзор
What is a SiC MOSFET? A Silicon Carbide MOSFET is a wide-bandgap (WBG) power transistor that operates like a silicon MOSFET but uses SiC as the semiconductor substrate. SiC's wider bandgap (3.26 eV vs 1.12 eV for Si) allows higher breakdown voltage, faster switching, and lower conduction loss per unit area, making SiC MOSFETs a subclass of power MOSFETs and a key member of the power semiconductor family used in high-efficiency switched-mode power conversion.
Key features include a typical on-resistance of 16 mΩ at Vgs=15 V, a maximum continuous drain current of 115 A at Tc=25°C, an internally limited avalanche energy rating, a body diode with low reverse recovery charge (Qrr), and a maximum junction temperature of 175°C. The TO-247-4 package provides a Kelvin-source connection that decouples the gate-drive return path from the high-current source path, slashing gate ringing and improving switching loss figures.
Architecturally, the device uses Wolfspeed's third-generation planar SiC process, which removes the JFET region pinch-off that limited earlier planar SiC parts. The result is a stable, robust RDS(on) over the full gate-drive range (12-18 V) and a positive temperature coefficient on resistance that supports easy paralleling in high-current modules.
Typical applications include solar string inverters, EV onboard chargers and DC-DC converters, industrial motor drives, telecom rectifier stages, and induction heating. The 1200 V class is the sweet spot for 800 V EV traction buses and 1000 V solar arrays where legacy silicon IGBTs cannot meet switching-frequency targets.
Design consideration: always use a dedicated gate driver with isolated 15 V/+/-5% output (per Wolfspeed Application Note PRD-04814) and place the gate-source resistor as close as possible to the Kelvin pin to exploit the TO-247-4 source-inductance reduction; otherwise you will lose the main switching-loss benefit of the 4-lead package.
This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet alone.
Аналоги без доработки для C3M0016120K — тот же корпус, pin-to-pin совместимость. Компоненты в других корпусах, требующие переработки PCB, исключены.
Инструмент быстрого сравнения — выберите альтернативные компоненты для сравнения бок о бок:
C3M0016120K1
✅ Прямая замена📋 Справочный аналог (нет в каталоге)
C3M0016120D
✅ Прямая замена📋 Справочный аналог (нет в каталоге)
SCT4018KE
✅ Прямая замена📋 Справочный аналог (нет в каталоге)
IMZ120R030M1H
✅ Прямая замена📋 Справочный аналог (нет в каталоге)
AIMW120R040M1
✅ Прямая замена📋 Справочный аналог (нет в каталоге)
C3M0016120K Максимальные параметры и электрические характеристики
| Manufacturer | Wolfspeed, Inc. |
| Technology | Silicon Carbide (SiC) MOSFET, Gen 3 (C3M), N-Channel |
| Drain-Source Voltage (VDS) | 1200 V |
| Gate-Source Voltage (VGS) | -10 V to +20 V (recommended +15 V ±5%) |
| On-Resistance RDS(on) | 16 mΩ typical at VGS=15 V, ID=75 A |
| Continuous Drain Current (ID, Tc=25°C) | 115 A |
| Power Dissipation (PD, Tc=25°C) | 556 W |
| Рабочая температура перехода | -40°C to +175°C |
| Input Capacitance (Ciss) | 6.085 nF |
| Output Capacitance (Coss) | 230 pF |
| Reverse Transfer Capacitance (Crss) | 13 pF |
| Total Gate Charge (Qg) | 211 nC |
| Gate Threshold Voltage (VGS(th)) | 3.6 V typical at ID=23 mA |
| Корпус | TO-247-4 (4-lead with Kelvin source) |
| Тип монтажа | Through Hole |
| Qualification | Industrial |
| RoHS Compliance | Compliant (per JLCPCB listing) |
Конфигурация выводов C3M0016120K
| Контакт 1 | Gate — Gate drive input (15 V typical, +/-5% tolerance per Wolfspeed App Note PRD-04814) |
| Контакт 2 | Drain — Main power drain terminal, connected to high-voltage bus |
| Контакт 3 | Source — Main power source terminal, carries full drain current |
| Контакт 4 | Kelvin Source — Kelvin-sense source return for gate driver, decouples gate loop from high-current source inductance |
Forward-Bias Область безопасной работы (estimated boundary)
Типичное применение
C3M0016120K подходит для 7 применениеs: Solar String Inverters, EV Onboard Chargers and DC-DC Converters, Industrial Motor Drives, Telecom and Server Rectifiers, Induction Heating and Welding, Energy Storage and Bidirectional Converters, Aerospace and Drone Power Systems.
Solar String Inverters
The C3M0016120K is purpose-built for 1000 V DC solar string inverters and 1500 V utility-scale central inverters where 1200 V VDS provides 20% safety margin on the DC bus. Its 16 mΩ on-resistance and 211 nC gate charge enable 50 kHz hard-switched boost PFC stages that achieve >99% efficiency per Wolfspeed reference designs, while the 175°C junction rating supports fan-less outdoor enclosures. The TO-247-4 Kelvin pin slashes turn-on loss by decoupling the gate loop from the high-current source path, directly raising European weighted efficiency by 0.2-0.4 percentage points versus TO-247-3 alternatives.
Рекомендуется
EV Onboard Chargers and DC-DC Converters
The C3M0016120K suits 800 V EV onboard charger (OBC) primary-side full-bridges and 400 V/12 V buck DC-DC stages where 1200 V SiC delivers 60-80% lower switching loss than 1200 V silicon IGBTs. At 115 A continuous and 556 W dissipation, a single device handles 11 kW OBC power in a TO-247-4 footprint, eliminating the paralleling required by older Si MOSFETs. The Gen 3 planar SiC die provides a positive temperature coefficient on RDS(on) for clean current sharing across multi-device OBC modules, and the 175°C Tj rating tolerates underhood ambient conditions.
Рекомендуется
Industrial Motor Drives
The C3M0016120K powers 480 V AC three-phase inverter stages in industrial variable-frequency drives (VFDs), servo amplifiers, and robotics where 1200 V SiC MOSFETs replace legacy IGBTs to push PWM frequency from 8 kHz to 32-64 kHz. The audible-noise drop below the 16 kHz hearing threshold and the 30% motor-iron loss reduction are direct consequences of the faster SiC switching. The 16 mΩ RDS(on) keeps conduction loss comparable to a 75 A IGBT, while the 175°C junction envelope simplifies liquid-cooled industrial cabinets.
Рекомендуется
Telecom and Server Rectifiers
The C3M0016120K is deployed in 400 V 3-phase telecom rectifier PFC stages and 380 V DC server PSU totem-pole bridgeless PFC converters where 1200 V SiC eliminates the input bridge rectifier and pushes efficiency above 98.5% (80 Plus Titanium). The 16 mΩ on-resistance handles 32 A continuous per device at 100 kHz, well within the 115 A silicon limit, and the TO-247-4 Kelvin pin prevents the gate-oscillation that plagues TO-247-3 parts in high-di/dt telecom applications. Heat-sink sizing shrinks 40% versus equivalent IGBT-based 3 kW rectifiers.
Рекомендуется
Induction Heating and Welding
The C3M0016120K drives induction-heating resonant inverters at 100-200 kHz where the low Coss of 230 pF and Qrr-near-zero body diode minimize circulating tank losses. At 16 mΩ on-resistance, a half-bridge pair delivers 25 kW output from a 600 V bus with >97% tank efficiency. The 175°C Tj and industrial qualification rating ensure long-life operation in continuous-duty induction cooking, brazing, and plastic-welding systems, where the SiC switching advantage translates directly into smaller resonant coils and capacitors.
Рекомендуется
Energy Storage and Bidirectional Converters
The C3M0016120K enables bidirectional battery-form PCS (power-conversion system) stages for grid-tied BESS where 1200 V SiC replaces IGBTs in both charge and discharge directions. The symmetric RDS(on) in both quadrants and the low Qrr body diode allow totem-pole operation without anti-parallel Si diodes, halving conduction loss on the reverse path. The TO-247-4 Kelvin source pin is critical for the >50 kHz switching needed to shrink 250 kW PCS cabinets to containerized footprints.
Рекомендуется
Aerospace and Drone Power Systems
The C3M0016120K supports high-density 270 V DC aerospace power distribution and high-voltage drone propulsion inverters where 1200 V SiC delivers >99% efficiency at 100 kHz switching. The 175°C junction rating and industrial qualification meet RTCA DO-160 thermal envelopes for avionics, while the 16 mΩ on-resistance minimizes weight-critical copper losses. The TO-247-4 package with Kelvin pin is hand-solderable for low-volume aerospace production runs.
Рекомендуется
Сводка рекомендуемых товаров
Справочные инженерные данные для C3M0016120K — сравнение, рекомендации по проектированию и информация о соответствии.
Руководство по выбору
Сравнение с аналогами
| Параметр | Этот товар | C3M0016120K1 | C3M0016120D | SCT4018KE | IMZ120R030M1H | AIMW120R040M1 |
|---|---|---|---|---|---|---|
| Brand | Wolfspeed | Wolfspeed | Wolfspeed | ROHM Semiconductor | Infineon | Infineon |
| Package | TO-247-4 (Kelvin) | TO-247-4 LP | TO-247-3 | TO-247-4 | TO-247-4 | TO-247-4 |
| Drain-Source Voltage (V) | 1200 | 1200 | 1200 | 1200 | 1200 | 1200 |
| On-Resistance RDS(on) typical (mΩ) | 16 | 16 | 16 | 18 | 30 | 40 |
| Max Junction Temperature (°C) | 175 | 175 | 175 | 175 | 175 | 175 |
| Automotive Grade | No (Industrial) | No (Industrial) | No (Industrial) | No | No | Yes (AEC-Q101) |
Ключевые отличия
- Lowest RDS(on) in 1200 V TO-247-4 SiC family (против IMZ120R030M1H)
- Lower gate charge than ROHM SCT4018KE at similar RDS(on) (против SCT4018KE)
- Kelvin-source pin eliminates TO-247-3 gate ringing (против C3M0016120D)
Заметки по проектированию
The TO-247-4 Kelvin-source pin only delivers a switching-loss benefit if the gate-driver return-current path is dedicated to pin 4. Estimated: if the gate-drive ground is tied to power source (pin 3) instead, source inductance can rise 5-10 nH and increase turn-on loss by 20-40%. Route the gate-driver auxiliary supply return and the gate-resistor ground directly to the Kelvin pin pad on the PCB, not to the power-source copper pour.
Estimated: at 25 W steady-state dissipation with a TO-247-4 RθJC of approximately 0.25 °C/W and a typical insulated-pad-to-heatsink RθCS of 0.15 °C/W, the junction-to-heatsink thermal drop is 10 °C, requiring a heatsink with RθSA below 4 °C/W to hold Tj under 135 °C. Apply 4-6 in-lb mounting torque with thermal interface material rated for >200 °C to avoid compound pump-out in SiC thermal-cycling applications.
Do not exceed +20 V on the gate or drive below -10 V; SiC gate-oxide breakdown is irreversible and Wolfspeed rejects RMA claims for VGS overshoot damage. Per Wolfspeed Application Note PRD-04814, a +15 V ±5% regulated supply is required; a simple 12 V Zener-clamped bootstrap is insufficient for the high di/dt of a half-bridge leg. Add a 10 kΩ gate-source pull-down to keep the device off during driver UVLO events.
SiC MOSFETs switch 5-10× faster than equivalent silicon IGBTs, producing high-frequency ringing above 50 MHz that can fail CISPR 11/22 radiated emissions. Use a ferrite-bead gate resistor (rather than a plain carbon film) to damp the gate-loop resonance, and add a 1-2 nF drain-source snubber capacitor rated for 1200 V operation. Estimated: a 1.5 nF snubber reduces drain-voltage overshoot by 30% and trims 4-6 dB off the 30-100 MHz radiated peak.
Информация о соответствии
RoHS compliance confirmed by JLCPCB listing and DigiKey SKU 10228321. AEC-Q100 not applicable (Industrial qualification only); AEC-Q101 equivalent available in Infineon AIMW120R040M1. REACH compliant per PartGenie. Halogen-free and conflict-minerals status not stated in the verified web data and should be requested from Wolfspeed directly.
