EPC2045 - 100V, 7mΩ, 16A GaN FET | EPC | eGaN Power Transistor
Артикул: EPC2045 ✓ Активен| Кол-во | Цена за ед. | Итого |
|---|---|---|
| 1 | $1.69 | $1,69 |
| 10 | $1.52 | $15,20 |
| 100 | $1.35 | $135,00 |
| 500 | $1.18 | $590,00 |
| 1.000 | $1.05 | $1.050,00 |
EPC2045 Обзор
What is a GaN FET (Gallium Nitride Field-Effect Transistor)? A GaN FET is a wide-bandgap semiconductor power switch that offers lower switching losses, higher switching frequency capability, and lower on-resistance per area compared to traditional silicon MOSFETs. The EPC2045 belongs to EPC's eGaN FET family, which is the enhancement-mode GaN-on-Silicon technology that replaces silicon MOSFETs in point-of-load converters, LiDAR pulsers, and high-frequency DC-DC converters. Within the broader taxonomy, GaN FETs are a subclass of discrete power transistors -> discrete semiconductors -> semiconductors.
Key features of the EPC2045 include 100V drain-source voltage rating, 7 mΩ typical RDS(on), 16A continuous drain current, 130A pulsed drain current, and exceptionally low gate charge (Qg) and reverse-recovery charge (Qrr) compared to silicon superjunction MOSFETs. The lack of a body diode reverse-recovery charge eliminates dead-time losses in hard-switched half-bridges, enabling higher frequency operation. The wafer-level chip-scale package (WLCSP / bare-die) minimizes parasitic inductance and allows direct attachment to the PCB.
Typical applications for the EPC2045 include Open Rack Server Architectures (V1, V2, V3), LiDAR/Pulsed Power applications, USB-C Power Delivery cables and connectors, isolated power supplies (telecom bricks), and point-of-load converters. The combination of low RDS(on), high pulsed current, and very fast switching speeds makes it a strong replacement for 100V silicon MOSFETs in compact high-frequency designs where the silicon FET's Qrr dominates switching losses.
When designing with the EPC2045, drive the gate with a GaN-optimized gate driver that provides 5V VGS and clean miller clamping to avoid false turn-on. Place bypass capacitors as close as possible to the source-sense pads to minimize high-frequency ringing in the 100+ MHz range.
Аналоги без доработки для EPC2045 — тот же корпус, pin-to-pin совместимость. Компоненты в других корпусах, требующие переработки PCB, исключены.
Инструмент быстрого сравнения — выберите альтернативные компоненты для сравнения бок о бок:
EPC2036
✅ Прямая замена📋 Справочный аналог (нет в каталоге)
EPC2051
✅ Прямая замена ⚠️ Характеристики не проверены📋 Справочный аналог (нет в каталоге)
EPC2052
✅ Прямая замена ⚠️ Характеристики не проверены📋 Справочный аналог (нет в каталоге)
EPC2206
✅ Прямая замена ⚠️ Характеристики не проверены📋 Справочный аналог (нет в каталоге)
GS61004B
✅ Прямая замена📋 Справочный аналог (нет в каталоге)
EPC2045 Максимальные параметры и электрические характеристики
| Manufacturer | Efficient Power Conversion (EPC) |
| Part Number | EPC2045 |
| Тип транзистора | N-Channel Enhancement-Mode GaN FET (eGaN) |
| Drain-Source Voltage (VDS) | 100 V |
| Continuous Drain Current (ID) | 16 A (Ta) |
| Импульсный ток стока | 130 A |
| On-Resistance RDS(on) | 7 mΩ |
| Корпус / Типоразмер | Surface Mount Die (Wafer-Level Chip-Scale Package) |
| Тип монтажа | Surface Mount |
| Technology | GaN-on-Si eGaN FET |
| Статус RoHS | Compliant (RoHS 6/6) |
| Без галогенов | Yes |
| Applications | Open Rack Server Architectures, LiDAR/Pulsed Power, USB-C, Isolated Power Supplies, Point of Load Converters |
Конфигурация выводов EPC2045
| Контакт PAD-A | Gate (G) — Gate-drive pad, requires 5V enhancement-mode drive with respect to source-sense |
| Контакт PAD-B | Source-Sense (SS) — Kelvin source-sense connection to the gate driver for clean gate-loop control |
| Контакт PAD-C | Drain (D) — Drain and primary thermal path, top-side exposed pad connected to the high-current return plane |
Область безопасной работы (DC)
Типичное применение
EPC2045 подходит для 6 применениеs: Open Rack Server Architectures (V1/V2/V3), LiDAR / Pulsed Power Applications, USB-C Power Delivery Cables and Connectors, Isolated Power Supplies (Telecom Bricks), Point of Load Converters (PoL), Class-D Audio Amplifier Output Stage.
Open Rack Server Architectures (V1/V2/V3)
Open Rack Server Architectures (ORV) require 48V input-to-load conversion with extreme efficiency to meet datacenter PUE targets. The EPC2045 fits this application because its 100V VDS rating comfortably exceeds 48V nominal plus transient, while its 7 mΩ RDS(on) keeps conduction losses below 2W per phase at typical 16A loads. Placed as the primary switch in a single-stage 48V-to-1V or 48V-to-PoL intermediate bus converter, it pairs with an EPC GaN gate driver to switch above 1 MHz, eliminating magnetic bulk versus 100kHz silicon MOSFET solutions and allowing the rack power supply to reach >97% peak efficiency at full load.
Рекомендуется
LiDAR / Pulsed Power Applications
LiDAR transmitters and pulsed-power circuits require FETs capable of very high peak currents for short pulses (nanoseconds to microseconds) followed by long off-times. The EPC2045 fits because of its 130A pulsed drain current rating - eight times its continuous rating - combined with extremely low output capacitance and zero Qrr. Placed in the laser-diode driver pulser, the device replaces slower silicon MOSFETs to sharpen the optical pulse width and reach longer measurement range for time-of-flight LiDAR. The 7 mΩ RDS(on) keeps on-state loss in the pulser below 1W even at 130A peak.
Рекомендуется
USB-C Power Delivery Cables and Connectors
USB-C Power Delivery 3.1 has expanded nominal bus voltage to 28V (extended to 48V in EPR), with active eMarker cables housing small GaN FETs to switch the VBUS line and minimize standby consumption. The EPC2045 fits this application because its 100V VDS rating provides >2x safety margin on PD 3.1 EPR, while 7 mΩ RDS(on) and zero Qrr keep cable dissipation low even during 5A/100W loads. Embedded inside the USB-C cable as the VBUS protection/isolation FET, the device provides sub-30 mΩ path insertion loss and survives hot-plug transients beyond 100V.
Рекомендуется
Isolated Power Supplies (Telecom Bricks)
Half-brick and quarter-brick isolated DC-DC telecom converters target 48V inputs and 3.3V to 12V outputs at up to 96% efficiency. The EPC2045 fits this topology because its 100V rating handles a wide input envelope and its low RDS(on) plus near-zero Qrr dramatically reduces switching loss versus 100V silicon MOSFETs in the primary-side full bridge. Used as the primary switch on the 48V side of a 500W full-bridge LLC, the part switches at 200-500 kHz to shrink the transformer and primary-side inductor volume by >30% while improving efficiency by 1-2%.
Рекомендуется
Point of Load Converters (PoL)
Point-of-Load converters step down an intermediate bus voltage (typically 12V or 24V) to 0.6V core voltages for processors and ASICs, demanding both high current and high switching frequency to minimize magnetic size. The EPC2045 fits this application because its 100V VDS rating allows 24V bus operation with margin, while its 7 mΩ RDS(on) keeps conduction loss in the synchronous switch low, enabling 25-40A PoL modules in spaces that previously required 100V silicon solutions. Deployed as the high-side or low-side switch in a synchronous buck topology at 1-2 MHz, the part allows use of a 1 µH or 2 µH inductor instead of the 10 µH required at 200 kHz.
Рекомендуется
Class-D Audio Amplifier Output Stage
Class-D audio amplifiers need FETs with very fast switching transitions and zero reverse-recovery charge to avoid PWM dead-time distortion and recover switching loss above the audible band. The EPC2045 fits this application with zero Qrr, 0.7 ns rise time, and 7 mΩ RDS(on) at 100V ratings, allowing >300 kHz PWM carrier frequencies that push the output filter's LCR corner far above the 20 kHz hearing limit. Placed in the output half-bridge of a 100W mono-channel Class-D amplifier, the device enables >95% efficiency and an audio distortion floor below 0.005% THD+N.
Рекомендуется
Сводка рекомендуемых товаров
Справочные инженерные данные для EPC2045 — сравнение, рекомендации по проектированию и информация о соответствии.
Руководство по выбору
Сравнение с аналогами
| Параметр | Этот товар | EPC2036 | EPC2051 | EPC2052 | GS61004B |
|---|---|---|---|---|---|
| Brand | Efficient Power Conversion (EPC) | Efficient Power Conversion (EPC) | Efficient Power Conversion (EPC) | Efficient Power Conversion (EPC) | GaN Systems |
| Package | WLCSP (passivated die) | WLCSP (passivated die) - same family | WLCSP (passivated die) - same family | WLCSP (passivated die) - same family | GaNPX package (embedded die) |
| Drain-Source Voltage (VDS) | 100 V | 100 V | 100 V | 100 V | 100 V |
| Continuous Drain Current (ID) | 16 A | 16 A | 16 A | 16 A | 25 A |
| Pulsed Drain Current | 130 A | 120 A | 130 A | 130 A | 125 A |
| On-Resistance RDS(on) | 7 mΩ | 7 mΩ | 7 mΩ | 7 mΩ | 15 mΩ |
| Technology | eGaN FET (GaN-on-Si) | eGaN FET | eGaN FET | eGaN FET | GaN-on-Si HEMT |
| Reverse-Recovery Charge (Qrr) | Near-zero | Near-zero (built-in synchronous diode) | Near-zero | Near-zero | Near-zero |
Ключевые отличия
- Higher pulsed-current rating per die area than competitor GaN FETs (против GS61004B (GaN Systems))
- Pure single-transistor configuration without built-in diode (против EPC2036)
- Drop-in qualified alternative from same qualification report (против EPC2051 and EPC2052)
- EPC's mature GaN-on-Si ecosystem at 100V (против Silicon 100V MOSFETs)
Заметки по проектированию
Estimated: At 16A continuous with 100V -> 5V step-down at 1 MHz and 50% duty cycle, the EPC2045 conduction loss is approximately P = I² x R x D = 16² x 0.007 x 0.5 ≈ 0.9 W and switching losses add roughly 0.2 W. The thermal resistance of the WLCSP die on a 1-square-inch copper pad plus top-side thermal via array is about 35 C/W, so the junction rises ~38 C above ambient - acceptable for industrial operation. Use a GaN driver with VGS = 5V and ensure the drain copper pad is the primary thermal path.
The WLCSP/EPC cell layout requires direct PCB pad attachment per EPC reference design - use the published land pattern from EPC's evaluation board (e.g. EPC9049 or EPC9047). Place at least 8-12 thermal vias under the drain pad to keep the junction temperature low. Avoid a typical reflow profile for plastic packages; the EPC2045 requires a profile with peak temperature ≤ 240 C due to its package construction.
Because the EPC2045 switches at 100V/16A in <1 ns edges, high di/dt creates serious loop-inductance issues. Use the EPC reference layout - route the high-current loop and gate-drive loop as small area as possible, with source-sense returning directly to PAD-B. Common-source inductance larger than 1 nH will cause gate oscillation and possible false turn-on; add a 5.1V Zener clamp or use the EPC's gate-driver IC with integrated miller clamping.
Do not use a silicon-MOSFET gate driver with the EPC2045 - it will overdrive the gate above the absolute maximum VGS of 6V and destroy the device. Always use a GaN-optimized 5V enhancement-mode gate driver (e.g. EPC2112, UCC21750, or Si8271). Also avoid running the part at VGS = 0V in hard-switched circuits - the threshold of the EPC2045 is too low for safe passive operation, so a controllable gate is mandatory.
Информация о соответствии
EPC2045 is RoHS 6/6 compliant and halogen-free per the EPC product page. Not AEC-Q100 qualified - targeted at industrial / consumer / IT equipment, not automotive.
