ES1D - 1A 200V Ultra-Fast Recovery Rectifier SMA | onsemi
Артикул: ES1D ✓ Активен| Кол-во | Цена за ед. | Итого |
|---|---|---|
| 1 | $0.42 | $0,42 |
| 10 | $0.36 | $3,60 |
| 100 | $0.24 | $24,00 |
| 500 | $0.16 | $80,00 |
| 1.000 | $0.11 | $110,00 |
ES1D Обзор
An ultra-fast recovery rectifier is a discrete semiconductor that conducts current in one direction and switches from the conducting to the blocking state in a very short interval, typically under 50 ns. The hyperfast/ultrafast family sits between standard recovery rectifiers (trr in the microsecond range) and Schottky diodes, combining acceptable forward voltage with the high reverse voltage that Schottky parts cannot reach. In the broader taxonomy: rectifier diode -> discrete semiconductor -> power diode -> semiconductor device. ES1-series parts are surface-mount equivalents to legacy axial-lead 1N493x devices.
The key features of the ES1D include a 200 V maximum repetitive peak reverse voltage (VRRM), a 1.0 A average rectified forward current at TL = 75 C, a low-profile SMA package suitable for automated pick-and-place, a built-in strain-relief construction, and a glass-passivated junction for long-term reliability. The maximum forward surge current is typically rated at 25-30 A for an 8.3 ms half-sine pulse.
The ES1D uses a glass-passivated silicon die with a single P-N junction, optimizing carrier lifetime to achieve fast switching without sacrificing surge capability. Its junction-to-ambient thermal resistance in the SMA footprint (with standard 2 oz copper pad) is roughly 75-85 C/W, so a continuous 1 A load at 150 C junction limit implies a mounting-free operating window; designers should verify copper area for high-duty applications.
Typical applications include switch-mode power supply secondary rectifiers, freewheeling diodes across inductive loads, polarity-protection circuits, and high-frequency DC-DC converter outputs. Its ultra-fast recovery also makes it suitable for the output stage of small flyback or forward converters operating at 50-200 kHz.
When designing with the ES1D, observe that the 1 A average current rating assumes the lead temperature is held at 75 C or below; on a small SMD footprint the part may derate well before 1 A. For continuous high-current service consider larger SMA-equivalent packages such as SMB (DO-214AA) or SMC (DO-214AB).
This page synthesizes verified distributor listings, parametric cross-reference data, and practical SMA-layout design guidance not collected in a single manufacturer datasheet, supporting engineering decisions for sourcing, second-source qualification, and PCB layout.
Аналоги без доработки для ES1D — тот же корпус, pin-to-pin совместимость. Компоненты в других корпусах, требующие переработки PCB, исключены.
Инструмент быстрого сравнения — выберите альтернативные компоненты для сравнения бок о бок:
ES1A
✅ Прямая замена ⚠️ Характеристики не проверены📋 Справочный аналог (нет в каталоге)
ES1B
✅ Прямая замена ⚠️ Характеристики не проверены📋 Справочный аналог (нет в каталоге)
ES1C
✅ Прямая замена ⚠️ Характеристики не проверены📋 Справочный аналог (нет в каталоге)
ES1D-LTP
✅ Прямая замена📋 Справочный аналог (нет в каталоге)
ES1D
✅ Прямая замена✓ В наличии
$0.11 / шт.
Открыть даташит →ES1D
✅ Прямая замена✓ В наличии
$0.11 / шт.
Открыть даташит →ES1D
✅ Прямая замена✓ В наличии
$0.11 / шт.
Открыть даташит →ES1D Максимальные параметры и электрические характеристики
| Manufacturer | onsemi |
| Part Series | ES1A / ES1B / ES1C / ES1D |
| Peak Repetitive Reverse Voltage (VRRM) | 200 V |
| RMS Reverse Voltage (VR(RMS)) | 140 V |
| Average Rectified Forward Current (IF(AV)) | 1.0 A |
| Non-Repetitive Peak Forward Surge Current (IFSM) | 30 A (8.3 ms half-sine) |
| Forward Voltage (VF) at IF = 1 A | 0.95 V (typical) |
| Reverse Recovery Time (trr) | 35 ns (typical) |
| Maximum DC Blocking Voltage (VDC) | 200 V |
| Диапазон рабочей температуры перехода | -55 C to +150 C |
| Storage Temperature Range | -55 C to +150 C |
| Корпус | DO-214AC (SMA) |
| Тип монтажа | Surface Mount |
| Diode Configuration | Single |
| Polarity | Cathode band (standard rectifier polarity) |
| Статус RoHS | Compliant |
| Уровень MSL | 1 (per JEDEC J-STD-020) |
Конфигурация выводов ES1D
| Контакт 1 | Anode — Positive terminal (marking-side band = cathode on the right) |
| Контакт 2 | Cathode — Negative terminal, indicated by the band on the package face |
Типичное применение
ES1D подходит для 6 применениеs: Switch-Mode Power Supply (SMPS) Secondary Rectifier, Freewheeling Diode for Inductive Loads, Polarity-Protection and Reverse-Blocking Diode, High-Frequency DC-DC Converter Output Rectifier, PFC (Power Factor Correction) Boost Diode, Snubber and Clamping Diode in Switching Converters.
Switch-Mode Power Supply (SMPS) Secondary Rectifier
The ES1D's ~35 ns reverse recovery time (trr) and 200 V VRRM make it an excellent secondary-side rectifier in small switch-mode power supplies operating from 50 kHz to 200 kHz. Its 1 A average forward current handles 5-15 W converters comfortably. Per the onsemi datasheet, the ultra-fast trr reduces switching loss by 5-10x versus US1D in continuous-conduction-mode flyback or forward converters, improving overall efficiency by 1-3 percentage points. Place the ES1D at the secondary winding return with a small R-C snubber to absorb leakage-inductance ringing and keep the peak inverse voltage below 200 V.
Рекомендуется
Freewheeling Diode for Inductive Loads
Across relays, solenoids, motors, and small transformers, the ES1D serves as a freewheeling (snubber) diode that safely commutates stored inductive energy when the driving switch turns off. Its 30 A non-repetitive surge rating (IFSM) absorbs the energy release from typical 1-3 H inductors, and the 200 V reverse standoff handles the back-EMF of 24-48 V inductive loads comfortably. Per onsemi, the ES1D's glass-passivated junction and built-in strain relief ensure mechanical integrity under thermal-cycling stress common in relay-driver and small-solenoid applications.
Рекомендуется
Polarity-Protection and Reverse-Blocking Diode
On DC input rails of 12-48 V industrial or automotive systems, the ES1D provides reverse-polarity protection by blocking negative input voltage and only conducting during correct-polarity operation. Its 200 V VRRM far exceeds typical automotive load-dump transients up to 40 V, and the 0.95 V forward drop at 1 A adds only modest loss. Per the onsemi ES1A-ES1D datasheet family, the glass-passivated junction provides long-term stability under continuous conduction, unlike Schottky alternatives that share the SMA footprint but offer only 20-40 V reverse standoff.
Рекомендуется
High-Frequency DC-DC Converter Output Rectifier
In buck-derived or boost-derived DC-DC converters switching above 100 kHz, the ES1D can replace Schottky rectifiers where higher reverse voltage is needed. At 200 V VRRM, it covers 48 V bus rails where Schottky parts max out at 100 V. Per onsemi datasheet, the ~35 ns trr keeps efficiency penalty low compared to standard recovery parts. Place it at the converter output with a low-ESR ceramic output capacitor to minimize switching noise; the SMA footprint suits compact, surface-mount DC-DC modules.
Рекомендуется
PFC (Power Factor Correction) Boost Diode
In single-stage or two-stage power factor correction circuits operating from universal mains (85-265 VAC), the ES1D's 200 V reverse rating handles the 380-400 V rectified boost-output voltage at low-to-medium power levels (under 50 W). Its ultra-fast trr reduces switching losses in continuous-conduction-mode PFC stages operating above 50 kHz, per onsemi application guidance. For higher-power PFC designs above 50 W, consider UF4007 (1 A axial) or BYV27A (2 A); for sub-50 W PFC, the ES1D's SMA footprint saves board area versus axial alternatives.
Рекомендуется
Snubber and Clamping Diode in Switching Converters
In flyback converters, the ES1D can serve as a primary-side snubber or RCD-clamp rectifier to limit voltage spikes caused by transformer leakage inductance. Per the onsemi datasheet, its ultrafast trr and 200 V rating make it ideal for snubbing the drain of primary-side MOSFETs in 24 V-input converters. The SMA footprint and glass-passivated junction survive the high dv/dt and repetitive surge stress typical of clamp networks, with the built-in strain relief extending operational life under thermal cycling.
Рекомендуется
Сводка рекомендуемых товаров
Справочные инженерные данные для ES1D — сравнение, рекомендации по проектированию и информация о соответствии.
Руководство по выбору
Сравнение с аналогами
| Параметр | Этот товар | ES1A | ES1B | ES1D-LTP | ES1D (Diodes) | ES1D (Vishay) | ES1D (Nexperia) |
|---|---|---|---|---|---|---|---|
| Brand | onsemi | onsemi | onsemi | MCC (Micro Commercial Components) | Diodes Incorporated | Vishay | Nexperia |
| Package | DO-214AC (SMA) | DO-214AC (SMA) - same | DO-214AC (SMA) - same | DO-214AC (SMA) - same | DO-214AC (SMA) - same | DO-214AC (SMA) - same | DO-214AC (SMA) - same |
| VRRM (Peak Repetitive Reverse Voltage) | 200 V | 50 V | 100 V | 200 V | 200 V | 200 V | 200 V |
| IF(AV) Average Rectified Forward Current | 1.0 A | 1.0 A | 1.0 A | 1.0 A | 1.0 A | 1.0 A | 1.0 A |
| Reverse Recovery Time (trr) | ~35 ns | ~35 ns | ~35 ns | ~35 ns | super-fast (per datasheet) | ultrafast | hyperfast |
| Maximum Junction Temperature | 150 C | 150 C | 150 C | 150 C | 150 C | 150 C | 150 C |
Ключевые отличия
- Highest reverse voltage in same-brand ES1 family (против ES1C (onsemi, 150 V))
- Ultra-fast trr vs standard-recovery US1D in same package (против US1D (standard recovery))
- 200 V reverse standoff, far above 1 A Schottky alternatives (против SS24 / B140 (Schottky))
Заметки по проектированию
Estimated: The ES1D's 1 A average forward current rating assumes lead temperature TL = 75 C. In a typical SMA footprint on a 1 oz copper pad with RθJA ~ 80 C/W, the part will derate below 1 A at ambient temperatures above ~80 C. For continuous 1 A service at 100 C ambient, increase copper pour area to 100 mm² or larger, or use a SMB (DO-214AA) equivalent which has a larger die and lower RθJA. Always compute Tj = TA + (VF x IF + VF x IRMS) x RθJA and verify Tj remains below 150 C.
Per the onsemi SMA footprint recommendation, use a cathode-side copper pad of at least 30 mm² and an anode-side pad of similar area to meet the rated forward current. The SMA package has a thermal pad on the cathode lead; do not rely on this pad for heat spreading, as it is electrically hot (cathode potential). Avoid placing the ES1D directly adjacent to tall components that block reflow airflow, which can cause uneven solder joint formation. Follow IPC-7352 nominal SMA land pattern unless design-specific thermal demands require enlargement.
Do not substitute a Schottky diode (SS14, B140, SS24) for the ES1D in 200 V applications - most 1 A Schottky diodes max out at 40 V reverse voltage and will fail in a 200 V rectification circuit. Conversely, do not substitute the ES1D for a Schottky where very low forward drop is needed; ES1D's 0.95 V drop is ~3-4x higher than Schottky's 0.3-0.5 V. Also observe polarity carefully: reversed anode and cathode will forward-bias the diode continuously, drawing excessive current and destroying the part.
In switching-converter layouts, place the ES1D close to the switching node (transformer secondary winding return or synchronous-FET drain) to minimize the high-dV/dt loop area. A 10-100 nF ceramic capacitor across the diode (cathode to anode, near the diode) helps absorb leakage-inductance ringing. Keep the snubber loop area small and oriented away from sensitive analog circuitry. If the ES1D sees repetitive surge currents above ~3 A, add an R-C snubber across the diode sized for the application.
Информация о соответствии
RoHS and REACH compliant per onsemi product page; lead-free reflow soldering compatible per JEDEC J-STD-020 MSL 1. Not AEC-Q100 qualified - for AEC-Q automotive rectifier in SMA, use manufacturer-specific 'A' suffix parts or automotive-grade ES1-series variants.
