IDL04G65C5XUMA2 - 650V 4A SiC Schottky Diode | Infineon
Артикул: IDL04G65C5XUMA2 ✓ Активен| Кол-во | Цена за ед. | Итого |
|---|---|---|
| 1 | $1.85 | $1,85 |
| 10 | $1.62 | $16,20 |
| 100 | $1.28 | $128,00 |
| 500 | $1.05 | $525,00 |
| 1.000 | $0.92 | $920,00 |
IDL04G65C5XUMA2 Обзор
A SiC Schottky diode is a wide-bandgap rectifier that uses a metal-semiconductor junction rather than a P-N junction, eliminating minority-carrier storage and the reverse-recovery losses of conventional silicon rectifiers. This plasma-free switching behavior enables higher switching frequencies, lower EMI, and cooler operation in PFC, totem-pole, and full-bridge topologies. Within the broader power-semiconductor taxonomy, the part sits in the SiC Schottky diode category, a subclass of wide-bandgap rectifiers under discrete power semiconductors.
Key features include a 4A average rectified forward current rating, 650V reverse-voltage capability, ultra-low reverse recovery charge Q_C of 7 nC, a forward voltage V_F around 1.7V at 4A, and an operating junction-temperature range of -55°C to +175°C. The PG-VSON-4 surface-mount package exposes the die to a top-side thermal pad and offers a low-inductance leadframe, supporting fast switching edges without the ringing seen in larger through-hole SiC packages.
Internally, the die is fabricated on Infineon's 5th-generation SiC Schottky barrier process, which minimizes leakage current at high reverse bias and improves surge-current robustness versus earlier SiC generations. The junction-to-ambient thermal resistance is approximately 62°C/W on the standard JEDEC 1s0p reference board, dropping below 10°C/W with a properly designed copper pour and thermal vias.
Typical applications include totem-pole bridgeless PFC in telecom and server SMPS, hard-switched boost converters in solar inverters, freewheeling rectifiers in industrial motor drives, and on-board chargers for electric vehicles. The combination of 650V blocking and zero reverse recovery makes it a natural fit for continuous-conduction-mode (CCM) PFC stages running above 100 kHz.
When designing with this part, ensure that the switching-node loop inductance is minimized by using a compact layout and short, wide PCB traces. The exposed pad must be soldered to a copper pour with multiple thermal vias to keep the junction below 175°C under worst-case load. Although SiC Schottky diodes do not exhibit reverse recovery, designers should still respect the data-sheet dV/dt rating to avoid turn-on overstress and EMI coupling into adjacent signal traces.
This page synthesizes distributor pricing, drop-in CoolSiC equivalents, and practical layout guidance not assembled on any single manufacturer page, helping engineers evaluate the part for both new designs and SiC upgrades to existing silicon rectifiers.
Аналоги без доработки для IDL04G65C5XUMA2 — тот же корпус, pin-to-pin совместимость. Компоненты в других корпусах, требующие переработки PCB, исключены.
Варианты в этой серии
Модели той же серии, совместимые без доработки с IDL04G65C5XUMA2 (тот же форм-фактор и посадочное место) — отличается по Package, Mounting Type, Product Family.
Инструмент быстрого сравнения — выберите альтернативные компоненты для сравнения бок о бок:
IDL04G65C5XUMA1
✅ Прямая замена📋 Справочный аналог (нет в каталоге)
IDL05G65C5XUMA2
✅ Прямая замена📋 Справочный аналог (нет в каталоге)
IDL04G65C5BTMA1
✅ Прямая замена📋 Справочный аналог (нет в каталоге)
IDL06G65C5XUMA2
✅ Прямая замена ⚠️ Характеристики не проверены📋 Справочный аналог (нет в каталоге)
IDL04G65C5XUMA2 Максимальные параметры и электрические характеристики
| Manufacturer | Infineon Technologies |
| Product Family | CoolSiC™ Schottky Diode Generation 5 |
| Diode Type | Silicon Carbide (SiC) Schottky |
| Repetitive Peak Reverse Voltage (V_RRM) | 650 V |
| Continuous Forward Current (I_F(AV)) | 4 A |
| Total Capacitive Charge (Q_C) | 7 nC (typical) |
| Forward Voltage (V_F) | 1.7 V at 4 A (typical, per datasheet) |
| Reverse Leakage Current (I_R) | 70 µA at 650 V |
| Junction Capacitance (C_J) | 130 pF at 1 V, 1 MHz |
| Reverse Recovery Time (t_rr) | 0 ns (Schottky, no minority-carrier storage) |
| Рабочая температура перехода | -55°C to +175°C |
| Корпус | PG-VSON-4 (DPAK real2pin) Surface Mount |
| Тип монтажа | Surface Mount, Tape & Reel |
| Число выводов | 4 (with exposed thermal pad) |
| RoHS / REACH | RoHS Compliant (per Infineon product page) |
Конфигурация выводов IDL04G65C5XUMA2
| Контакт 1 | Cathode 1 (K1) — Cathode terminal (connected to top tab) |
| Контакт 2 | Cathode 2 (K2) — Cathode terminal (second connection for high current) |
| Контакт 3 | Anode (A) — Anode terminal |
| Контакт 4 | Anode (A) — Anode terminal (mirrored to balance die current) |
| Контакт TAB | Exposed Pad (Anode) — Thermal pad electrically tied to anode; solder to copper pour |
Forward Current vs Forward Voltage
Типичное применение
IDL04G65C5XUMA2 подходит для 6 применениеs: Totem-Pole Bridgeless PFC, Solar Inverter Boost Stage, Industrial Motor Drive Freewheeling, On-Board Charger for EV, Telecom SMPS PFC Front End, Server & Datacenter SMPS.
Totem-Pole Bridgeless PFC
The IDL04G65C5XUMA2 is well suited as the slow-leg rectifier in a totem-pole bridgeless PFC running in continuous conduction mode above 100 kHz. Its zero reverse recovery and 7 nC Q_C eliminate the recovery-current spikes that would otherwise flow into the high-side Si MOSFET. Placed on the AC side of the bridge, it converts the line voltage to a regulated 400 V DC bus while adding negligible switching loss. Compared with a silicon PiN, the SiC part drops 1.7V V_F at 4A but recovers far less energy per cycle, so total loss stays lower at high frequency. The PG-VSON-4 footprint minimizes loop inductance, which is critical to limit turn-off overvoltage on the companion MOSFET.
Рекомендуется
Solar Inverter Boost Stage
In a residential solar string-inverter boost converter stepping 30-80 V DC up to 400 V DC, the IDL04G65C5XUMA2 serves as the boost rectifier diode handling up to 4A average forward current and 650V reverse stress. Its 175°C junction rating tolerates the elevated thermal load of a sealed rooftop enclosure, while the SiC zero-recovery behavior keeps the boost diode from dominating switching loss at 50-100 kHz switching. Designers can shrink the boost inductor because the diode no longer imposes a recovery-current floor. The PG-VSON-4 surface-mount package keeps the design compatible with automated high-volume solar-inverter assembly lines.
Рекомендуется
Industrial Motor Drive Freewheeling
Industrial AC drives frequently use SiC Schottky diodes as freewheeling rectifiers across the IGBT bridge to recover stored charge during commutation. The IDL04G65C5XUMA2 with 650V reverse blocking and 4A continuous rating suits the 400V AC-class drive segment where the bus reaches 560-650V during regenerative braking. Its zero reverse recovery current prevents shoot-through transients in the IGBT half-bridge, raising the practical switching frequency and reducing motor audible noise. The wide -55°C to +175°C junction range tolerates under-the-hood industrial cabinets without derating the diode at high ambient temperatures.
Рекомендуется
On-Board Charger for EV
On-board EV chargers converting 230 V AC to 400 V DC for the traction battery benefit from the IDL04G65C5XUMA2's high temperature capability and zero reverse recovery in the PFC and DCDC bridge stages. The 650V V_RRM rating provides the headroom needed to handle transient overvoltages on a 400 V bus without an additional TVS clamp. Its 4A continuous rating fits 1.5-3.3 kW charger power levels common in European PHEV/HEV on-board systems. The compact PG-VSON-4 land pattern supports the dense power-stage layouts that EV charger designers need to meet chassis size constraints.
Рекомендуется
Telecom SMPS PFC Front End
Front-end PFC stages in -48 V telecom SMPS that convert 230 V AC to a 400 V DC bus use the IDL04G65C5XUMA2 as a hard-switched boost rectifier. Its 7 nC Q_C keeps switching loss manageable at 100 kHz CCM operation, while the 650V V_RRM tolerates worst-case rectified-line transients on the unprotected AC input. The 4A continuous rating supports 1-2 kW telecom rectifier modules that power server racks. The exposed thermal pad of PG-VSON-4 allows direct top-side cooling in a 1U chassis where airflow is restricted, enabling higher power density than a through-hole DPAK would permit.
Рекомендуется
Server & Datacenter SMPS
Modern 80-PLUS Titanium server SMPS targeting 550-800W use bridgeless totem-pole PFC topologies where the IDL04G65C5XUMA2's zero recovery and 650V rating enable >96% efficiency. The part handles 4A continuous forward current typical of a 1-2 kW PFC stage and improves the iTHD below 5% under light-load conditions. Its 175°C junction maximum permits compact heatsink-less layouts in a 1U or 2U server form factor. The PG-VSON-4 footprint maintains compatibility with both top-side cooling and bottom-side cold-plate designs used in hyperscale datacenter PSUs.
Рекомендуется
Сводка рекомендуемых товаров
Справочные инженерные данные для IDL04G65C5XUMA2 — сравнение, рекомендации по проектированию и информация о соответствии.
Руководство по выбору
Сравнение с аналогами
| Параметр | Этот товар | IDL04G65C5XUMA1 | IDL05G65C5XUMA2 | IDL04G65C5BTMA1 | IDL06G65C5XUMA2 |
|---|---|---|---|---|---|
| Brand | Infineon | Infineon | Infineon | Infineon | Infineon |
| Package | PG-VSON-4 | PG-VSON-4 (same) | PG-VSON-4 (same) | PG-VSON-4 (same) | PG-VSON-4 (same) |
| Peak Reverse Voltage (V_RRM) | 650 V | 650 V | 650 V | 650 V | 650 V |
| Continuous Forward Current | 4 A | 4 A | 5 A (+25%) | 4 A | 6 A (+50%) |
| Total Capacitive Charge Q_C | 7 nC | 7 nC | 8 nC | 7 nC | 9 nC |
| Forward Voltage V_F @ 4A | 1.7 V | 1.7 V | 1.7 V | 1.7 V | 1.7 V |
| Operating Junction Temperature | -55°C to +175°C | -55°C to +175°C | -55°C to +175°C | -55°C to +175°C | -55°C to +175°C |
| Ordering / Reel Code | XUMA2 (3000/reel) | XUMA1 (older ordering code) | XUMA2 (3000/reel) | BTMA1 (blister tape variant) | XUMA2 (3000/reel) |
| Approx. Unit Price @ qty-1000 | $0.92 | $0.92 | $1.05 | $0.92 | $1.20 |
Ключевые отличия
- Gen5 SiC die with industry-leading 7 nC Q_C at 4A/650V class (против IDL05G65C5XUMA2)
- Compact PG-VSON-4 footprint enables high-density PCB layouts (против IDL04G65C5XUMA1)
- Zero reverse recovery enables >100 kHz hard-switched PFC (против IDL06G65C5XUMA2)
Заметки по проектированию
Estimated: at 4A continuous forward current with V_F = 1.7V per the datasheet, the device dissipates approximately 6.8W of conduction loss. The PG-VSON-4 package's theta_JA is approximately 62°C/W on the standard 1s0p JEDEC board, producing a junction-to-ambient rise of about 422°C - clearly above the 175°C maximum. To stay within the 175°C junction limit, the design MUST use a copper pour of at least 1 square inch on the top side and multiple thermal vias to the bottom layer, dropping theta_JA to roughly 25°C/W and the temperature rise to 170°C at 4A. Designers should derate to 3A continuous in thermally sealed enclosures unless active cooling is present.
The exposed thermal pad is internally tied to the anode, so the PCB land pattern must be copper and MUST be soldered to the pad to provide both the thermal path and the anode connection. Use at least 6 thermal vias (0.3 mm diameter) in the center of the land pattern, connecting to a 2 oz copper bottom plane. Keep the AC switching-node copper area minimal to avoid adding loop inductance; the VSON-4 leadframe is already optimized for low inductance, but every extra millimetre of trace will re-introduce ringing into the high-side switch.
Place the IDL04G65C5XUMA2 as close as possible to the switching transistor it pairs with, minimizing the high-dV/dt loop. For totem-pole PFC, route the gate-drive and the high-switch node first, then place the diode directly across the half-bridge so the commutation loop area is under 1 cm². Avoid running signal traces beneath the diode footprint; the SiC dV/dt can couple noise into the gate driver and the controller ground. Use a 4-layer board with a solid ground plane immediately below the top layer for best results.
Although the SiC Schottky diode has zero reverse recovery, do NOT assume it is unconditionally robust to dV/dt. The datasheet specifies a maximum dV/dt during turn-on; exceeding it can damage the barrier junction. Always add a small R-C snubber (e.g. 10Ω + 1 nF) across the diode in the prototype to damp any ringing before committing to production. Also remember that the SiC part's reverse leakage at 650V is in the 70 µA range - significantly higher than a silicon PiN - so do not use it as a precision voltage reference.
The fast switching edges enabled by the SiC diode improve efficiency but worsen EMI. Pair the IDL04G65C5XUMA2 with a common-mode choke and a properly sized X-capacitor on the AC input to keep conducted emissions within CISPR 22 Class B. Place the diode as close as practical to the bulk capacitor to minimize the high-frequency loop. If conducted emissions are still failing at 30-100 MHz, consider adding a small ferrite bead on the DC bus before the electrolytic capacitor.
Информация о соответствии
RoHS / REACH compliant per Infineon product page. PG-VSON-4 package is lead-free and supports Pb-free reflow profiles. Not AEC-Q100 qualified; for automotive designs use the AEC-Q101-qualified sister family if available.
