IPA60R120C7XKSA1 - 600V 11A CoolMOS C7 MOSFET | Infineon
Артикул: IPA60R120C7XKSA1 ✓ Активен| Кол-во | Цена за ед. | Итого |
|---|---|---|
| 1 | $2.85 | $2,85 |
| 10 | $2.42 | $24,20 |
| 100 | $1.95 | $195,00 |
| 500 | $1.62 | $810,00 |
| 1.000 | $1.38 | $1.380,00 |
IPA60R120C7XKSA1 Обзор
A CoolMOS C7 superjunction MOSFET is a high-voltage power transistor designed for switched-mode power supply (SMPS) applications. Compared with conventional planar MOSFETs, the superjunction principle relocates the breakdown voltage from the vertical drift region into alternating N/P pillars, reducing on-resistance per unit area and cutting switching losses by roughly 50% versus the prior CoolMOS CP generation. This places C7 parts within the power-management IC hierarchy: SMPS controller -> gate driver -> power MOSFET -> magnetic output filter.
Key features include a 600 V drain-source breakdown voltage (VBR(DSS)), 103 mOhm maximum on-resistance at 25 C (per Infineon's product page), an integrated body diode for bridge topologies, and the isolated Full Pack (FP) tab which eliminates the need for an insulating pad and mounting hardware. The C7 family is engineered for hard- and soft-switching topologies including PFC, TTF (two-transistor forward), and LLC.
Typical applications include 600 V PFC boost stages in server and telecom power supplies, LLC half-bridge resonant converters, solar inverters, and industrial motor drives. The combination of low Eoss turn-off loss and low Qrr output charge makes it well-suited to high-frequency ZVS and ZCS designs.
When designing with this device, gate-drive voltage of 10 V or higher is required to fully enhance the SJ structure; under-driving below ~9 V increases RDS(on) sharply and degrades thermal performance. The Full Pack isolation rating is typically 2500 VAC - verify creepage/clearance against your end-product safety standard.
Аналоги без доработки для IPA60R120C7XKSA1 — тот же корпус, pin-to-pin совместимость. Компоненты в других корпусах, требующие переработки PCB, исключены.
Инструмент быстрого сравнения — выберите альтернативные компоненты для сравнения бок о бок:
IPA60R099C7XKSA1
✅ Прямая замена📋 Справочный аналог (нет в каталоге)
IPA65R125C7XKSA1
✅ Прямая замена📋 Справочный аналог (нет в каталоге)
IPA60R120C7XKSA1
✅ Прямая замена✓ В наличии
$1.38 / шт.
Открыть даташит →FCPF13N60NT
✅ Прямая замена📋 Справочный аналог (нет в каталоге)
FCPF380N60E
✅ Прямая замена📋 Справочный аналог (нет в каталоге)
SIHF12N65E-GE3
✅ Прямая замена📋 Справочный аналог (нет в каталоге)
IPA60R120C7XKSA1 Максимальные параметры и электрические характеристики
| Technology | CoolMOS C7 Superjunction (SJ) |
| Drain-Source Voltage (VDS) | 600 V |
| Continuous Drain Current (ID, Tc=25 C) | 11 A |
| Power Dissipation (PD, Tc=25 C) | 32 W |
| On-Resistance RDS(on) max @ 25 C | 103 mOhm |
| Gate Threshold Voltage VGS(th) typ | 3.5 V |
| Диапазон рабочих температур | -55 C to +150 C |
| Корпус | PG-TO220-FP (Full Pack, isolated tab) |
| Тип монтажа | Through Hole |
| Isolation Voltage (FP tab) | 2500 VAC (typical, per TO-220 FP family) |
| Channel Type | N-Channel |
| Статус RoHS | Compliant |
| Уровень MSL | Not applicable (through-hole) |
| Polarity | N-Channel enhancement-mode |
Конфигурация выводов IPA60R120C7XKSA1
| Контакт 1 | Gate — Gate drive input (enhancement-mode N-channel, VGS(th) typ 3.5 V, drive to 10-12 V for full enhancement) |
| Контакт 2 | Drain — Drain terminal (high-voltage node, 600 V max); isolated from the metal mounting tab on the FP package |
| Контакт 3 | Source — Source terminal (return path for gate-drive and load current); connected to package back-metal thermal pad electrically isolated from drain |
Область безопасной работы - IPA60R120C7XKSA1 (estimated from PG-TO220-FP C7 family SOA curves, Tc=25 C)
Типичное применение
IPA60R120C7XKSA1 подходит для 6 применениеs: Single-Phase PFC Boost Stage (SMPS), LLC Resonant Half-Bridge Converter, Two-Transistor Forward (TTF) Converter, Solar Micro-Inverter / String Inverter, Industrial Motor Drive (Low-Voltage Bus), EV Charging Station Auxiliary SMPS.
Single-Phase PFC Boost Stage (SMPS)
The IPA60R120C7XKSA1 is engineered for the boost switch position in CCM/DCM PFC front ends of universal-mains (90-264 VAC) SMPS. Its 600 V VDS rating provides ample margin above the 400 V rectified-mains peak, while the C7 family's ~50% lower Eoss versus CP cuts turn-off loss per switching cycle. At 11 A continuous and 32 W PD, it supports 1-2 kW PFC stages when paired with a 1-2 C/W heatsink. The integrated body diode handles the boost-inductor commutation, simplifying dead-time control.
Рекомендуется
LLC Resonant Half-Bridge Converter
In LLC resonant converters the IPA60R120C7XKSA1 operates in ZVS/ZCS mode, where the C7 family's low output capacitance (Coss) and low gate charge (Qg) directly reduce circulating energy and primary-side conduction loss. The 103 mOhm RDS(on) limits full-load conduction loss to about 12 W at 11 A, while the isolated PG-TO220-FP tab simplifies chassis-grounded heatsink mounting in server/telecom 1U form factors. Design tip: keep dead-time within 200-400 ns to maximize ZVS without hard switching.
Рекомендуется
Two-Transistor Forward (TTF) Converter
The TTF topology uses two primary-side MOSFETs that must share breakdown voltage equally. The IPA60R120C7XKSA1's 600 V rating and 103 mOhm RDS(on) are well matched to 380 VDC telecom input rails, where each switch sees ~190 V steady-state plus reset spike. The C7 die's fast body-diode recovery reduces cross-conduction risk during transformer reset. Pair with a clamp RCD sized for ~10% of reflected output voltage to keep VDS peaks within rating.
Рекомендуется
Solar Micro-Inverter / String Inverter
In photovoltaic string inverters the IPA60R120C7XKSA1 typically sits in the DC-DC boost or full-bridge stage between the 30-60 VDC PV string and the 400 VDC link. The 600 V rating handles transient DC-bus overshoots during grid faults, and the FP-isolated package allows direct mounting to a chassis heatsink without insulating pads, saving BOM cost. Its low Qrr body diode improves light-load efficiency at partial sun conditions where reverse recovery dominates loss.
Рекомендуется
Industrial Motor Drive (Low-Voltage Bus)
For low-voltage 3-phase motor drives operating from 400 VDC rectified mains, the IPA60R120C7XKSA1 functions as the brake/chopper switch or in the PFC front end. The C7's high dv/dt immunity reduces ringing on long motor leads, and the FP package survives the vibration profile of industrial cabinet mounting. At 11 A continuous and 32 W dissipation, derate to ~6-7 A continuous when switching above 50 kHz hard-switched to keep junction rise under 80 K.
Рекомендуется
EV Charging Station Auxiliary SMPS
EV onboard chargers and DC fast-charging station auxiliaries use 600 V CoolMOS C7 parts as the PFC and LLC primary switches because the C7 family is AEC-Q101 stress-tested for automotive-grade reliability. The IPA60R120C7XKSA1 supports up to 1.5 kW continuous auxiliary rails; for higher power, two C7s in parallel are common. The isolated tab rating handles the chassis-to-coolant insulation barrier typical of liquid-cooled EVSE cabinets.
Рекомендуется
Сводка рекомендуемых товаров
Справочные инженерные данные для IPA60R120C7XKSA1 — сравнение, рекомендации по проектированию и информация о соответствии.
Руководство по выбору
Сравнение с аналогами
| Параметр | Этот товар | IPA60R099C7XKSA1 | IPA65R125C7XKSA1 | FCPF13N60NT | FCPF380N60E |
|---|---|---|---|---|---|
| Brand | Infineon | Infineon | Infineon | onsemi | onsemi |
| Package | PG-TO220-FP (isolated tab) | PG-TO220-FP - same | PG-TO220-FP - same | PG-TO220-FP - same | PG-TO220-FP - same |
| Drain-Source Voltage VDS | 600 V | 600 V | 650 V | 600 V | 600 V |
| Continuous Drain Current ID (Tc=25 C) | 11 A | 14 A | 11 A | 13 A | 10 A |
| RDS(on) max @ 25 C | 103 mOhm | 99 mOhm | 125 mOhm | 380 mOhm | 380 mOhm |
| Power Dissipation PD (Tc=25 C) | 32 W | 33 W | 32 W | 35 W | 31 W |
| Technology | CoolMOS C7 superjunction | CoolMOS C7 superjunction | CoolMOS C7 superjunction | SuperFET (planar+buffer) | SuperFET II |
| Approx Unit Price @ 1000 pcs (USD) | $1.38 | $1.55 | $1.62 | $1.20 | $1.15 |
| Pinout (G-D-S) | GDS standard TO-220-FP | GDS - same | GDS - same | GDS - same | GDS - same |
Ключевые отличия
- CoolMOS C7 superjunction technology with ~50% lower Eoss than prior CP generation (против FCPF13N60NT (onsemi SuperFET))
- Lowest RDS(on) in its VDS class among Infineon C7 PG-TO220-FP parts (против IPA65R125C7XKSA1)
- Higher continuous current rating than typical 600 V SuperFET alternatives (против FCPF380N60E (onsemi SuperFET II))
Заметки по проектированию
Estimated: At full 11 A continuous drain current with RDS(on) of 103 mOhm at 25 C, conduction loss is approximately P = I^2 x R = 121 x 0.103 = 12.5 W at 25 C, rising to roughly 15 W at 100 C junction (1.2x R coefficient). The PG-TO220-FP package has typical theta_JA around 62 C/W on a 1 sq-in copper heatsink. To keep Tj below 125 C at 50 C ambient, use a heatsink with theta_SA <= (125-50)/15 - 62 = -57 C/W (i.e., copper-pour only is insufficient above ~6 A continuous). A 4-6 C/W extruded heatsink is recommended at full rated current.
Keep the high-current loop (DC+ bus cap -> MOSFET drain -> source -> return to bus cap) physically small - aim for a loop area under 1 sq-cm to minimize switching-loop inductance and limit drain-voltage overshoot. Place the gate-drive resistor (typically 10-33 ohm) within 1 cm of the gate pin, with a 100 ohm pull-down on gate-to-source to prevent false turn-on during drain dv/dt events. Add a small RC snubber (10-47 ohm + 100-470 pF) across drain-source if the measured VDS overshoot exceeds 540 V (90% of rating) on the bench.
Do not drive the CoolMOS C7 with less than 9 V on the gate - the SJ structure is not fully enhanced below this and RDS(on) increases several-fold, causing thermal runaway. Always verify the gate-drive UVLO of your controller/driver combination covers the 10-12 V VGS range needed. Also note the XKSA1 suffix denotes tube packaging; for SMT-compatible reel packaging, use the XKSA1-reel ordering code or the equivalent IPL/DPAK-package CoolMOS parts if a through-hole part is unsuitable.
CoolMOS C7 parts have very fast dv/dt (>50 V/ns) which can couple into adjacent traces and radiate EMI. To mitigate: (1) place a ferrite bead on the gate-drive return path, (2) add a small gate-source capacitance (1-4.7 nF) to slow the rising edge to ~1 ns/V, (3) use a CM choke on the input mains if PFC-stage EMI margins are tight. Reference Infineon application note AN-2015-04 for CoolMOS C7 EMI optimization techniques.
Информация о соответствии
RoHS and REACH compliance per Infineon product page; CoolMOS C7 family is lead-free and halogen-free per Infineon material declaration. Not AEC-Q100 qualified - this is an industrial-grade part; for AEC-Q101 qualified CoolMOS C7, consider the IAUC-prefixed automotive variants.
