IPD30N08S2-22 - 75V 30A N-Ch OptiMOS DPAK | Infineon
Артикул: IPD30N08S2-22 ✓ Активен| Кол-во | Цена за ед. | Итого |
|---|---|---|
| 1 | $1.05 | $1,05 |
| 10 | $0.94 | $9,40 |
| 100 | $0.78 | $78,00 |
| 500 | $0.65 | $325,00 |
| 1.000 | $0.52 | $520,00 |
IPD30N08S2-22 Обзор
A power MOSFET is a voltage-controlled field-effect transistor optimized for switching high currents at high efficiency. Within the power-semiconductor hierarchy (MOSFET -> discrete power transistor -> power management component), MOSFETs dominate low- and medium-voltage switching because of their fast switching speed, low gate drive power, and low conduction losses.
Key features include AEC-Q101 automotive qualification, MSL1 rating up to 260C peak reflow, a -55C to +175C operating temperature range, 100% avalanche testing for robust unclamped inductive switching, and a green lead-free package. The ultra-low RDS(on) minimizes conduction losses (P = I2 x RDS(on)), while the logic-level gate threshold permits direct drive from 3.3V or 5V microcontrollers.
The device uses Infineon planar technology, which the datasheet describes as delivering the world's lowest RDS(on) at 75V class in planar technology, combined with the highest current capability and the lowest switching and conduction power losses of its class. Optimized gate charge and output capacitance reduce switching losses in high-frequency converter topologies.
Typical applications include automotive body control modules, electric power steering, DC-DC converters, motor drives, and load switches in 12V and 24V systems, where the 75V rating provides ample margin against load-dump transients.
Design tip: ensure at least 10V of gate drive for full enhancement and provide generous copper area on the drain tab for thermal dissipation; derate current at high ambient temperatures.
Аналоги без доработки для IPD30N08S2-22 — тот же корпус, pin-to-pin совместимость. Компоненты в других корпусах, требующие переработки PCB, исключены.
Инструмент быстрого сравнения — выберите альтернативные компоненты для сравнения бок о бок:
IPD30N08S2L-21
✅ Прямая замена📋 Справочный аналог (нет в каталоге)
IPD068N06N3 G
✅ Прямая замена ⚠️ Характеристики не проверены📋 Справочный аналог (нет в каталоге)
NTD5867NL-1G
✅ Прямая замена ⚠️ Характеристики не проверены📋 Справочный аналог (нет в каталоге)
DMT4010LPS-13
✅ Прямая замена ⚠️ Характеристики не проверены📋 Справочный аналог (нет в каталоге)
NTD3055L104
✅ Прямая замена ⚠️ Характеристики не проверены📋 Справочный аналог (нет в каталоге)
IPD30N08S2-22 Максимальные параметры и электрические характеристики
| Transistor Polarity | N-Channel Enhancement Mode |
| Drain-Source Voltage VDS | 75 V |
| Continuous Drain Current ID | 30 A |
| RDS(on) Max | 21.5 mOhm at VGS = 10 V |
| Technology | OptiMOS planar |
| Avalanche Testing | 100% avalanche tested |
| Рабочая температура | -55C to +175C |
| Корпус | PG-TO252-3-11 (DPAK-2) |
| Тип монтажа | Surface Mount |
| MSL Rating | MSL1 up to 260C peak reflow |
| Automotive Qualification | AEC-Q101 qualified |
| Статус RoHS | Compliant (green lead-free package) |
Конфигурация выводов IPD30N08S2-22
| Контакт 1 | Gate — Gate control terminal |
| Контакт 2 (tab) | Drain — Drain, connected to exposed tab for heat dissipation |
| Контакт 3 | Source — Source terminal |
Область безопасной работы (approximate, verify against datasheet Fig. SOA)
Типичное применение
IPD30N08S2-22 подходит для 6 применениеs: Automotive Body Control Modules, Electric Power Steering, DC-DC Converters, Motor Drives, Load Switches and Power Distribution, Battery Protection and BMS Discharge Paths.
Automotive Body Control Modules
The IPD30N08S2-22's AEC-Q101 qualification and 75V rating with load-dump margin make it a strong fit for automotive body control modules driving relays, lamps, and solenoids on 12V rails. Its ultra-low 21.5 mOhm RDS(on) at VGS=10V minimizes conduction loss and heat in densely packed ECU boards, while 100% avalanche testing ensures survival under unclamped inductive switching from relay coils. In a high-side or low-side switch role, the DPAK package dissipates several watts with a modest copper pour, and the -55C to +175C operating range covers under-hood environments.
Рекомендуется
Electric Power Steering
Electric power steering (EPS) systems need MOSFETs that withstand high pulsed currents, voltage transients, and wide temperature extremes. The IPD30N08S2-22 offers 30A continuous current capability, a 75V breakdown voltage well above 12V rail excursions, and AEC-Q101 qualification demanded by EPS suppliers. The planar OptiMOS cell structure delivers the class-leading RDS(on) of 21.5 mOhm, reducing conduction losses during high-torque assist events, while the 100% avalanche rating absorbs energy from motor phase inductances during PWM chopping. Place it with 10V gate drive from a three-phase bridge driver for optimal efficiency.
Рекомендуется
DC-DC Converters
In 12V-to-low-voltage buck converters and 24V industrial power supplies, the IPD30N08S2-22 serves as the main switching FET with 75V headroom above 24V bus inputs. Optimized gate charge in the planar OptiMOS structure keeps switching losses low at typical 100-300 kHz converter frequencies, while the 21.5 mOhm RDS(on) limits conduction loss at load. The logic-level compatible threshold permits drive from dedicated PWM controllers, and the DPAK package mounts on standard SMT layouts. Designers should verify the datasheet SOA curves at their switching frequency and provide adequate gate-drive resistance to control EMI.
Рекомендуется
Motor Drives
Low-voltage DC motor drives, pump controllers, and fan drivers benefit from the IPD30N08S2-22's combination of 30A current capability, low RDS(on), and 100% avalanche robustness for inductive load switching. In an H-bridge or half-bridge configuration, four DPAK MOSFETs provide a compact surface-mount power stage for 12V and 24V motors. The 75V rating tolerates regenerative braking voltage spikes, and the -55C to +175C range supports sealed enclosures without forced cooling. Use a gate driver with at least 10V output to guarantee the datasheet RDS(on), and add shoot-through dead time in the PWM control.
Рекомендуется
Load Switches and Power Distribution
As a low-side load switch in automotive and industrial power-distribution modules, the IPD30N08S2-22 switches 12V/24V rails with minimal voltage drop thanks to its 21.5 mOhm RDS(on), keeping thermal rise low even at tens of amps. Its logic-level threshold allows direct microcontroller actuation for small loads, and the green lead-free DPAK package meets RoHS requirements for global markets. Designers should add a gate pulldown resistor to guarantee off-state during startup, and consider the avalanche rating as implicit protection against wiring-inductance transients when switching cable harnesses.
Рекомендуется
Battery Protection and BMS Discharge Paths
In 12V and 24V battery systems including backup power and industrial battery packs, the IPD30N08S2-22 functions as a discharge-path or protection MOSFET. Its 75V rating withstands charging transients, 30A capability serves high-current discharge paths, and the ultra-low RDS(on) of 21.5 mOhm reduces wasted energy in the conduction path, which matters for runtime and thermal design. The AEC-Q101 qualification supports vehicular battery applications, and 100% avalanche testing adds robustness against inductive disconnect events. Pair the FET with a battery-monitoring AFE that drives the protection gate via a charge pump.
Рекомендуется
Сводка рекомендуемых товаров
Справочные инженерные данные для IPD30N08S2-22 — сравнение, рекомендации по проектированию и информация о соответствии.
Руководство по выбору
Сравнение с аналогами
| Параметр | Этот товар | IPD30N08S2L-21 | IPD068N06N3 G | NTD5867NL-1G |
|---|---|---|---|---|
| Package | PG-TO252-3-11 (DPAK-2) | PG-TO252-3-11 (DPAK) - same | PG-TO252-3-11 (DPAK) - same | TO-252 (DPAK) - same footprint |
| Brand | Infineon | Infineon | Infineon | onsemi |
| VDS Breakdown Voltage | 75 V | 75 V | 60 V | 60 V |
| Automotive Grade | AEC-Q101 qualified | AEC-Q101 qualified | OptiMOS standard | Industrial/consumer |
| Gate Drive | Logic level, RDS(on) spec at VGS=10V | Logic level (L variant) | Standard | Logic level |
Ключевые отличия
- Class-leading 75V planar RDS(on) (против NTD5867NL-1G)
- AEC-Q101 automotive qualification (против NTD5867NL-1G)
- Trade-off: lower RDS(on) options exist in newer technology (против IPD068N06N3 G)
Заметки по проектированию
Conduction loss is P = I2 x RDS(on). At 30A with 21.5 mOhm, theoretical loss is about 19.4W - far beyond DPAK capability. In practice, continuous current must be thermally derated based on RthJA with your copper area. Provide at least 1 square inch of copper on the drain tab for a few watts of dissipation, and consult the datasheet transient thermal impedance (ZthJC) curves for pulsed loads.
The 21.5 mOhm RDS(on) is specified at VGS=10V. Driving from a 5V or 3.3V microcontroller GPIO increases on-resistance and can cause overheating at load. Use a dedicated gate driver (e.g., TI UCC or Infineon IR family) delivering at least 10V for full enhancement, and keep series gate resistance around 4.7-22 Ohm to balance switching speed against EMI.
The 75V rating provides margin for 12V/24V automotive load-dump, but unclamped inductive kick can still exceed it. Although the part is 100% avalanche tested, avalanche is a survival rating, not a normal operating mode - add a TVS clamp or flyback diode for repetitive inductive events. Also confirm MSL1 handling: bake is not required, but shelf-life and floor-life rules still apply per IPC guidance.
Keep gate loop area small by routing the gate trace close to the source return, and place a low-ESR ceramic close to the drain-source loop to suppress switching ringing. The exposed drain tab is the primary heat path - use multiple thermal vias to inner copper planes when power dissipation exceeds about 2W.
Информация о соответствии
Datasheet states AEC-Q101 qualified, green lead-free package, MSL1 up to 260C peak reflow. REACH and halogen-free status not stated in provided data.
