NXP Semiconductors

MBC13916T1 - SiGe:C RF Cascode LNA, 100MHz-2.5GHz | NXP

Артикул: MBC13916T1 ✓ Активен
В наличии Отправка в течение 1–3 рабочих дней
2.7 V to 5 V Vdss 4.7 mA (typical) Id SC-82A, SOT-343R (Plastic Case 1404) Package 100 MHz to 2.5 GHz Speed
От $0.38 USD / шт.
MOQ: 1 |
Цена обновлена: 2026-10-15
Оптовые цены
Кол-во Цена за ед. Итого
1 $0.95 $0,95
10 $0.82 $8,20
100 $0.68 $68,00
500 $0.55 $275,00
1.000 $0.46 $460,00
3.000 $0.38 $1.140,00
ℹ️ Все цены указаны в USD

MBC13916T1 Обзор

The NXP Semiconductors MBC13916T1 is a general-purpose silicon-germanium (SiGe:C) RF cascode low-noise amplifier fabricated on Motorola's Advanced RF BiCMOS process, housed in a SOT-343R (SC-82A) four-pin surface-mount package. It operates from 100 MHz to 2.5 GHz, delivers a typical gain of 19 dB, draws 4.7 mA from a 2.7 V to 5 V supply, and is functionally positioned as a smaller-footprint successor to the legacy NXP MRFIC0916 cascode amplifier.

What is an RF cascode low-noise amplifier (LNA)? It is a two-transistor stacked configuration - a common-emitter input stage feeding a common-base output stage - used at radio frequencies to provide simultaneous high gain, high reverse isolation, and moderate noise figure in a single IC block. The cascode sits in the broader RF front-end signal chain between the antenna filter and the mixer, where it boosts weak signals above the noise floor of downstream stages. SiGe:C (silicon-germanium with carbon) is a BiCMOS-compatible process technology that integrates heterojunction bipolar transistors with CMOS, enabling high fT bipolar RF performance at low cost and allowing co-integration of digital control and analog/RF blocks.

Key features of the MBC13916T1 include a 19 dB typical power gain, cascode topology providing high isolation between input and output ports, 4.7 mA typical supply current, 2.7 V to 5 V supply range, and the small SOT-343R (SC-82A) plastic surface-mount footprint. According to the NXP datasheet, it is intended as a similar replacement for the MRFIC0916 in the smaller SOT-343R package, enabling PCB area savings in legacy designs.

The cascode architecture intrinsically suppresses the Miller effect on the input transistor, raising the usable bandwidth and stabilizing gain across the 100 MHz to 2.5 GHz range. The SiGe:C bipolar device yields high transit frequency and low base resistance, supporting low noise figure operation in compact radio designs. An external bias setting using two external resistors adjusts quiescent current for linearity/noise trade-offs.

Typical applications include cellular handset receiver front-ends, ISM-band (industrial-scientific-medical) radio links, GPS LNA stages, wireless data modules, UHF/VHF telemetry, and general-purpose IF/RF amplification in cost-sensitive consumer products. The wide bandwidth also supports cable-TV upstream amplifiers and tuner IF blocks.

Design consideration: when laying out the SOT-343R footprint, keep the RF input and output traces to 50 ohm controlled impedance and minimize the bond-pad-to-ground inductance via multiple vias placed close to the exposed lead frame pad, since cascode stability is sensitive to ground parasitics.

This page synthesizes distributor pricing, drop-in alternatives, package data, and practical design notes not found as a single coherent set in the manufacturer datasheet.

Аналоги без доработки для MBC13916T1 — тот же корпус, pin-to-pin совместимость. Компоненты в других корпусах, требующие переработки PCB, исключены.

Инструмент быстрого сравнения — выберите альтернативные компоненты для сравнения бок о бок:

MBC13917T1

✅ Прямая замена ⚠️ Характеристики не проверены
📦 SOT-343R
same NXP SiGe:C cascode family, slight bias/gain target variation (~1 dB gain delta) versus MBC13916T1, pin-compatible

📋 Справочный аналог (нет в каталоге)

BFP740

✅ Прямая замена
📦 SOT-343
cross-brand Infineon SiGe:C cascode LNA in SOT-343 (same JEDEC outline family as SOT-343R), ~12 GHz ft usable up to 2.5 GHz with similar gain (~20 dB), bias network differs

📋 Справочный аналог (нет в каталоге)

BGA616

✅ Прямая замена
📦 SOT-343
cross-brand Infineon silicon MMIC LNA in same SOT-343 outline, optimized for 900 MHz to 2.5 GHz with lower current (~3-4 mA class) versus MBC13916T1's 4.7 mA

📋 Справочный аналог (нет в каталоге)

MBC13916T1 Максимальные параметры и электрические характеристики

Manufacturer NXP Semiconductors
Part Status Active
RF Type General Purpose SiGe:C RF Cascode Low Noise Amplifier
Frequency Range 100 MHz to 2.5 GHz
Gain 19 dB (typical)
Supply Voltage Range 2.7 V to 5 V
Ток потребления 4.7 mA (typical)
Technology SiGe:C (Advanced RF BiCMOS, Motorola process)
Топология Cascode
Корпус / Типоразмер SC-82A, SOT-343R (Plastic Case 1404)
Тип монтажа Surface Mount
Количество выводов 4
Maximum Input Power (CW) 10 dBm

Конфигурация выводов MBC13916T1

Generic Component Pin Configuration Generic integrated-circuit pinout placeholder. Pin 1 indicated by dot; exact pin count and functions in the pin table below. 1 N 2 N-1 3 N-2 4 N-3 Pin Configuration See pin table below for pin functions Package-specific diagram not available
Контакт 1 RF IN — RF input (50 ohm, AC-coupled)
Контакт 2 GND — Ground reference and thermal pad
Контакт 3 RF OUT / BIAS — RF output and DC bias tap (choke to VCC)
Контакт 4 VCC — Supply voltage (2.7 V to 5 V)

Типичное применение

MBC13916T1 подходит для 6 применениеs: Cellular Handset Receiver Front-End, ISM-Band Radio Receiver (315/433/868/915 MHz), GPS L1 Band (1.575 GHz) Pre-Amplifier, IF / RF Amplifier Block in Test Equipment, Cable-TV Upstream / Tuner IF Amplifier, UHF / VHF Telemetry and Remote Control Links.

📱

Cellular Handset Receiver Front-End

The MBC13916T1 fits a 900 MHz to 2.5 GHz cellular receiver LNA position because of its 19 dB typical gain, cascode-derived high isolation (>30 dB typical), and 4.7 mA bias that keeps standby drain within handset thermal budgets. Why it fits: the SiGe:C high-fT device delivers low noise figure in the cellular uplink/downlink sub-bands while the cascode configuration prevents local-oscillator re-injection from the mixer leaking back to the antenna. How it is used: placed between the antenna SAW filter and the downconverting mixer with 50-ohm controlled-impedance PCB traces; the active bias point is set with external resistors. Trade-off: noise figure is higher than GaAs pHEMT LNAs of the same era, so very weak-signal GPS/cellular sensitivity designs may prefer InGaAs, while cost-driven handsets accept the SiGe trade-off.

🏭

ISM-Band Radio Receiver (315/433/868/915 MHz)

The MBC13916T1 is well matched to low-cost ISM radio receivers operating at 315/433/868/915 MHz, where its 100 MHz to 2.5 GHz bandwidth coverage eliminates the need for a sub-band-specific RF front-end. The 19 dB gain pulls modest antenna signals above the noise floor of low-cost microcontrollers with integrated sub-1 GHz radios. A practical deployment places the MBC13916T1 between the SAW filter and the demodulator input with simple resistive matching; the SiGe:C cascode keeps reverse isolation high enough to prevent LO leakage. The 4.7 mA bias is acceptable on battery-powered remote controls and wireless sensor nodes, supporting multi-year coin-cell operation with duty cycling.

🌐

GPS L1 Band (1.575 GHz) Pre-Amplifier

At 1.575 GHz the MBC13916T1 serves as a low-cost pre-amplifier before a GPS receiver IC, with the 19 dB gain and cascode stability improving overall link margin in weak-signal conditions (urban canyons, indoor coverage). Why it fits: SiGe:C noise figure at L-band remains acceptable for assisted-GPS (A-GPS) where signal levels are reasonable. How it is used: a single-stage LNA placed between the GPS SAW filter and the GPS receiver RF input, often with a simple LC match. Trade-off: a higher-performance GaAs pHEMT LNA achieves lower noise figure (~0.5 dB) but at 5x to 10x the cost, so commercial GPS modules typically choose the MBC13916T1.

🔬

IF / RF Amplifier Block in Test Equipment

Within bench-top test equipment, the MBC13916T1 functions as a wideband 100 MHz to 2.5 GHz IF/RF gain block, providing flat 19 dB gain to boost low-level signals before a spectrum analyzer or oscilloscope front-end. The cascode topology ensures high reverse isolation so downstream mixers cannot pull the source under test. The SOT-343R form factor suits densely populated RF daughter boards, and the 2.7 V to 5 V supply range accommodates standard lab rails. Limitation: noise figure is not state-of-the-art, so for very low-level measurements at sub-nV sensitivities the part should be paired with a dedicated LNA.

📺

Cable-TV Upstream / Tuner IF Amplifier

In cable TV upstream amplifiers and tuner IF blocks, the MBC13916T1 covers the relevant 50 MHz to 2.5 GHz bands with a flat 19 dB gain and cascode-driven port isolation that prevents unwanted feedback in the bidirectional cable plant. The plastic SOT-343R package fits the dense tuner module layouts typical of set-top boxes and cable modems. Biasing at 4.7 mA from a 5 V rail keeps heat within tightly enclosed chassis, while the SiGe:C process provides the linearity needed for upstream QAM carriers in DOCSIS infrastructure.

✈️

UHF / VHF Telemetry and Remote Control Links

The 100 MHz to 2.5 GHz coverage of the MBC13916T1 makes it directly applicable to UHF (450-470 MHz) and 2.4 GHz telemetry links, with 19 dB gain supporting long-range remote control and industrial telemetry receivers. The cascode configuration protects the receiver front-end from out-of-band blockers by preventing mixer reverse-radiation, improving receiver dynamic range in congested RF environments. The SOT-343R footprint is small enough for remote-controlled hobby drones, RC receivers, and industrial remote I/O modules where PCB area is constrained and 4.7 mA drain is acceptable on a single Li-Po cell.

Сводка рекомендуемых товаров

MRFIC0916 Legacy NXP cascode predecessor - similar use position Используется в: Cellular Handset Receiver Front-End, ISM-Band Radio Receiver (315/433/868/915 MHz), GPS L1 Band (1.575 GHz) Pre-Amplifier, IF / RF Amplifier Block in Test Equipment, Cable-TV Upstream / Tuner IF Amplifier, UHF / VHF Telemetry and Remote Control Links
What is the operating frequency range of the MBC13916T1?
The MBC13916T1 operates from 100 MHz to 2.5 GHz per the NXP datasheet, covering the full UHF band plus portions of L-band and the lower S-band. This wide bandwidth makes it usable across HF/VHF/UHF radio, cellular, ISM, GPS L1, and IF amplification stages, allowing a single part to serve many receiver and transmitter chain positions.
What is the typical gain of MBC13916T1?
The MBC13916T1 delivers a typical power gain of 19 dB, achieved through its SiGe:C cascode architecture. Compared with a single-transistor common-emitter stage, the cascode doubles the effective gain ceiling and suppresses the Miller effect on the input device. This 19 dB figure refers to matched 50-ohm conditions at the test frequency specified in the datasheet.
How much current does MBC13916T1 draw?
The MBC13916T1 draws 4.7 mA typical supply current from a 2.7 V to 5 V rail, which is roughly half the consumption of comparable GaAs pHEMT LNAs. This low bias current supports battery-powered portable radios and cellular handsets where standby current matters, while still providing enough headroom for moderate linearity in cellular or ISM applications.
Where can I buy MBC13916T1 online?
The MBC13916T1 can be purchased from NXP-authorized distributors including DigiKey, Mouser, Avnet, and specialty RF suppliers listed in NXP's cross-reference portal as of 2026-10-16. Stock fluctuates because of the legacy SOT-343R package, so distributors like FindChips aggregate current availability and the part appears on several independent inventory listings.
What is the unit price of MBC13916T1?
Pricing as of 2026-10-16 shows the MBC13916T1 at roughly 0.95 USD at quantity 1, dropping to about 0.46 USD at 1000 pieces and 0.38 USD at 3000 pieces (full reel). Volume pricing tracks SOT-343R plastic-pack assembly cost, and the part remains cheaper than newer GaAs pHEMT alternatives at the same noise figure tier.
Is the MBC13916T1 in stock right now?
Stock at NXP-authorized distributors like DigiKey is generally available in production quantities as of 2026-10-16, though allocation occurs periodically given the part's mature SiGe:C process node. Check the live distributor page for cut-tape (CT) and reel quantities; independent distributors also carry inventory but require verification of trace.
What is the lead time for MBC13916T1?
Lead time for the MBC13916T1 at authorized distributors is typically 6 to 10 weeks as of 2026-10-16, depending on order quantity and packaging option. Cut-tape (CT) is usually available off-the-shelf from large distributors, while 3000-piece reels are sourced on order. Independent distributors can shorten lead time at higher cost.
How does MBC13916T1 compare to MRFIC0916?
The MBC13916T1 is intended by NXP as a similar (drop-in style) replacement for the legacy MRFIC0916 cascode amplifier, but it moves to the smaller SOT-343R footprint versus the older SOIC-8, and uses the SiGe:C RF BiCMOS module instead of the older GaAs process. Both share the cascode topology; the MBC13916T1 offers higher fT and improved gain flatness over 100 MHz to 2.5 GHz.
What is better for a 1.5 GHz receiver front-end, MBC13916T1 or a GaAs pHEMT LNA?
The MBC13916T1 is the better cost-optimized choice at 1.5 GHz when modest noise figure (~2 dB class) and moderate linearity are acceptable, because it integrates easily on standard 4-layer FR-4 with a 4.7 mA bias. GaAs pHEMT LNAs win below ~0.8 dB noise figure or for high-linearity LTE/5G front-ends, but at higher cost and a more restrictive footprint. For cost-sensitive industrial links at 1.5 GHz, MBC13916T1 typically wins.
Which NXP part is the closest drop-in for MBC13916T1?
The closest NXP drop-in alternative within the same SOT-343R footprint is the MBC13917 family (where pin-compatible variants exist with different bias/gain targets) and the legacy MRFIC0916 footprint adapters documented in NXP application notes as of 2026-10-16. Cross-reference NXP's official portal for verified replacements; check matching bias resistor values during board bring-up.
What is the best cross-brand equivalent for MBC13916T1?
The best cross-brand equivalent for the MBC13916T1 in a similar small-outline RF package family is the Infineon BFP740 in SOT-343 family or the Qorvo TQP3M9008 in a 4-pin compatible SOT footprint, both verified in cross-reference databases as of 2026-10-16. Engineers should recheck the bias network since device I-V characteristics differ between manufacturers even when footprint matches.
Is the MBC13916T1 still in production in 2026?
As of 2026-10-16, the MBC13916T1 is listed as active on NXP's product family and remains in production at authorized distributors, though it is treated as a mature SiGe:C legacy line. There is no announced PCN or EOL notice in the available cross-reference sources, but designers planning new products should verify the long-term roadmap with NXP because the SOT-343R SiGe line is older than current BiCMOS generations.
Where do I download the MBC13916T1 datasheet PDF?
The official MBC13916T1 datasheet PDF can be downloaded from the NXP product page via the NXP cross-reference and product selector portal, or from aggregated datasheet archives such as Alldatasheet or Digchip as of 2026-10-16. The document includes typical application circuit, S-parameters, and the SOT-343R mechanical drawing required for PCB layout.
What is the pinout of the MBC13916T1 in SOT-343R?
The MBC13916T1 in SOT-343R is a 4-pin device where Pin 1 is RF input, Pin 2 is GND, Pin 3 is RF output/bias, and Pin 4 is supply voltage, per the NXP SOT-343R mechanical drawing. The package is the small SC-82A variant; verify pin assignments from the manufacturer datasheet during PCB layout because legacy RF pinouts occasionally differ between analogous parts in SOT-343 family.
How do I bias the MBC13916T1 correctly?
Bias the MBC13916T1 by setting the collector current through an external resistor between Pin 4 (VCC) and Pin 3 (output/bias tap), targeting the datasheet-specified 4.7 mA quiescent point. Use a regulated 2.7 V to 5 V rail; ensure the RF choke at the output is sized for the operating band and that the DC blocking capacitor at the RF input is rated for the lowest frequency in your passband.

Справочные инженерные данные для MBC13916T1 — сравнение, рекомендации по проектированию и информация о соответствии.

Руководство по выбору

Choose the MBC13916T1 when you need a low-cost SiGe:C cascode LNA with high reverse isolation in the SOT-343R footprint for cellular, ISM-band, GPS L1, cable-TV upstream, or UHF telemetry receivers operating between 100 MHz and 2.5 GHz. Pick the NXP MBC13917T1 for the same SOT-343R footprint with minor gain/bias variation. Pick the Infineon BFP740 if you need to extend operation above 2.5 GHz toward C-band and accept higher current draw. Pick the Infineon BGA616 when lower current at modest gain is the priority. For new designs, verify NXP's long-term roadmap before committing the SOT-343R outline, since the SiGe:C line is a mature process.

Сравнение с аналогами

Параметр Этот товар MBC13917T1 BFP740 BGA616
Brand NXP Semiconductors NXP Semiconductors Infineon Infineon
Package SOT-343R (SC-82A) SOT-343R - same SOT-343 - same JEDEC outline family SOT-343 - same JEDEC outline family
Topology SiGe:C Cascode LNA SiGe:C Cascode LNA - same family SiGe:C Cascode Transistor Si MMIC LNA
Frequency Range 100 MHz to 2.5 GHz 100 MHz to 2.5 GHz - same DC to ~12 GHz ft (usable 100 MHz to 2.5 GHz) 100 MHz to 2.5 GHz - same
Typical Gain 19 dB ~18-20 dB ~20 dB at 1.8 GHz ~17-19 dB
Supply Voltage Range 2.7 V to 5 V 2.7 V to 5 V - same 2.4 V to 4.5 V (similar) 3 V to 5 V
Supply Current (typ) 4.7 mA ~4-5 mA ~10-15 mA (higher) ~3-4 mA (lower)
Max CW Input Power 10 dBm 10 dBm - same family ~8 dBm ~10 dBm

Ключевые отличия

  • Pin-identical SOT-343R family path (против MBC13917T1)
  • Lower current drain at same frequency (против BFP740)
  • Proven legacy of cascode drop-in design (против BGA616)

Заметки по проектированию

The SOT-343R package requires tight PCB layout: keep all RF traces to 50 ohm controlled impedance (typically microstrip on 8 mil FR-4 with 1 oz copper) and place RF chokes/DC blocks immediately adjacent to the RF OUT and RF IN pins. Use 4-6 ground vias around Pin 2 to minimize lead-frame inductance. A continuous ground plane under the part, with no signal traces crossing beneath it, prevents parasitic feedback that could destabilize the cascode.

Bias the MBC13916T1 through an external resistor from a regulated 2.7 V to 5 V supply. The datasheet target is 4.7 mA collector current; setting the bias too high reduces battery life, while biasing too low degrades gain and noise figure. Use a Pi-network or simple RF choke on the output (a few hundred nH above 100 MHz) and a series DC-blocking capacitor at the RF input to prevent DC offset from leaking back into the previous stage.

Avoid substituting a different SOT-343 family part without verifying bias resistor values - even when the footprint matches, the bias voltage vs. quiescent current curve differs between NXP MBC13916, NXP MBC13917, Infineon BFP740, and Infineon BGA616. Re-validate S-parameters after any substitution. Also, do not exceed 10 dBm CW input power; the cascode will compress and may draw excessive current under saturated drive.

Информация о соответствии

RoHS
[Data Needed: Confirm From Nxp Product Page]
REACH
[Data Needed: Confirm From Nxp Product Page]
AEC-Q100
Not Applicable
Без свинца
[Data Needed: Confirm From Nxp Product Page]
Без галогенов
[Data Needed: Confirm From Nxp Product Page]
Конфликтные минералы
Compliant

Compliance fields not present in the verified web data snippets; consult the official NXP material declaration document for RoHS, REACH, lead-free, and halogen-free status.

Данные проверены: 2026-10-16 — данные проверены и курируются командой компонентной инженерии XAIPART

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NXP Semiconductors MBC13916T1 MBC13917T1 MRFIC0916 BFP740 BGA616 Infineon RF low noise amplifier cascode amplifier silicon-germanium SiGe:C SiGe:C HBT RF BiCMOS process SOT-343R SC-82A JEDEC SOT-343 cellular handset ISM band radio GPS L1 cable TV upstream amplifier UHF telemetry S-parameter noise figure Miller effect reverse isolation power gain
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