MD7IC2050NBR1 - 10W W-CDMA RF Power Amplifier 1880-2100MHz | NXP
Артикул: MD7IC2050NBR1 ✓ Активен| Кол-во | Цена за ед. | Итого |
|---|---|---|
| 1 | $38.5 | $38,50 |
| 10 | $34.2 | $342,00 |
| 100 | $29.8 | $2.980,00 |
| 500 | $25.9 | $12.950,00 |
| 1.000 | $22.4 | $22.400,00 |
MD7IC2050NBR1 Обзор
An RF power amplifier (RF PA) is a critical component in the transmitter chain of wireless infrastructure equipment. Its role in the system hierarchy is: RF amplifier -> power amplifier -> RF front-end -> transceiver -> base station. RF PAs boost low-level modulated signals from the transceiver up to transmission power levels required by the antenna, while maintaining linearity, efficiency, and spectral mask compliance. LDMOS (laterally-diffused metal-oxide-semiconductor) has been the dominant RF power transistor technology for sub-3 GHz macrocell base stations due to its high power density, mature supply chain, and excellent ruggedness under mismatch.
Key features of the MD7IC2050NBR1 include on-chip matching for both input (50 ohm, DC blocked) and output (>5 ohm), integrated quiescent current temperature compensation with enable/disable function, integrated ESD protection, and series equivalent large-signal impedance parameters documented in the manufacturer datasheet. The integrated quiescent compensation eliminates external bias circuitry drift across temperature.
Technically, the device uses a multi-stage LDMOS architecture on a ceramic-thermal-path plastic package (CASE 1618-02). The TO-270 WB-14 footprint provides a low thermal resistance path for continuous 10 W average W-CDMA operation. According to the NXP datasheet, the part is characterized for both common-source S-parameters (for small-signal design) and large-signal impedance parameters (for output network matching at full power), enabling accurate harmonic-balance simulation in ADS or AWR.
Typical applications include W-CDMA / UMTS macrocell base stations, picocell and femtocell transmitters, repeaters, and 1880-2100 MHz band RF power stages in distributed antenna systems. The part is well suited for line replacement of legacy two-stage discrete PA designs.
When designing with the MD7IC2050NBR1, ensure adequate PCB thermal management - the 225C capable plastic package requires a proper solder footprint and heat-sinking copper area to keep junction temperature within derating limits under W-CDMA PAR of about 7-8 dB. The enable pin allows TDD or standby sequencing without cycling the 28 V rail.
This page synthesizes distributor pricing, drop-in same-brand variants (MD7IC2050NR1, MD7IC2050GNR1), and practical design considerations not found in the bare manufacturer datasheet.
Аналоги без доработки для MD7IC2050NBR1 — тот же корпус, pin-to-pin совместимость. Компоненты в других корпусах, требующие переработки PCB, исключены.
Варианты в этой серии
Модели той же серии, совместимые без доработки с MD7IC2050NBR1 (тот же форм-фактор и посадочное место) — отличается по Mounting Type, Architecture, Manufacturer, Package / Case, RF Type.
Инструмент быстрого сравнения — выберите альтернативные компоненты для сравнения бок о бок:
MD7IC2050NR1
✅ Прямая замена✓ В наличии
$21.95 / шт.
Открыть даташит →MD7IC2050GNR1
✅ Прямая замена📋 Справочный аналог (нет в каталоге)
MW7IC2040NR1
✅ Прямая замена✓ В наличии
$24.2 / шт.
Открыть даташит →MW7IC930NR1
✅ Прямая замена📋 Справочный аналог (нет в каталоге)
MW6S004NT1
✅ Прямая замена ⚠️ Характеристики не проверены📋 Справочный аналог (нет в каталоге)
MD7IC2050NBR1 Максимальные параметры и электрические характеристики
| RF Type | W-CDMA |
| Frequency Range | 1.88 GHz to 2.1 GHz |
| Operating Bandwidth (broader usability) | 1750 MHz to 2050 MHz |
| Напряжение питания | 28 V |
| Supply Current (quiescent) | 230 mA |
| Gain | 30.5 dB |
| Average Output Power (W-CDMA) | 10 W average |
| Architecture | Multi-stage RF LDMOS integrated power amplifier |
| Input Matching | On-chip, 50 ohm, DC blocked |
| Output Matching | On-chip, >5 ohm nominal |
| Enable / Disable | Integrated (with quiescent current temperature compensation) |
| ESD Protection | Integrated |
| Корпус | TO-272 WB-14 (CASE 1618-02, plastic overmold) |
| Maximum Junction / Package Temperature | 225 C capable plastic |
| RoHS Compliance | Compliant (per manufacturer datasheet) |
| Тип монтажа | Surface Mount (flanged lead) |
Конфигурация выводов MD7IC2050NBR1
| Контакт 1 | RFIN — RF input (50 ohm, DC blocked on-chip) |
| Контакт 2 | GND — Ground / flange |
| Контакт 3 | GND — Ground / flange |
| Контакт 4 | GND — Ground / flange |
| Контакт 5 | VGG / Bias — Gate bias supply (with on-chip temp compensation) |
| Контакт 6 | GND — Ground / flange |
| Контакт 7 | GND — Ground / flange |
| Контакт 8 | VDD1 — Drain supply, stage 1 (28 V) |
| Контакт 9 | GND — Ground / flange |
| Контакт 10 | GND — Ground / flange |
| Контакт 11 | VDD2 — Drain supply, stage 2 (28 V) |
| Контакт 12 | GND — Ground / flange |
| Контакт 13 | EN — Enable / disable (with quiescent temp compensation) |
| Контакт 14 | RFOUT — RF output (>5 ohm, on-chip matched) |
Область безопасной работы (LDMOS Drain)
Типичное применение
MD7IC2050NBR1 подходит для 6 применениеs: W-CDMA Macrocell Base Station PA, UMTS / 3G Picocell Transmitter, Cellular Repeater / DAS Power Stage, 1880-2050 MHz Multi-Band PA Line-up, RF Power Stage for Test & Measurement, Industrial / Aerospace Telemetry PA.
W-CDMA Macrocell Base Station PA
The MD7IC2050NBR1 is purpose-built for 1.88-2.1 GHz W-CDMA macrocell base-station final-stage PAs, delivering 10 W average output with 30.5 dB gain from a 28 V rail. Its integrated on-chip input matching (50 ohm, DC blocked) and >5 ohm output matching eliminate the discrete LC networks of legacy two-stage designs, simplifying the PA line-card layout. Per NXP, the integrated quiescent temperature compensation keeps bias stable across the -40 C to +85 C base-station ambient range without external thermistor networks. Compared with discrete LDMOS line-ups, this part reduces PCB area by 30-50% and BOM count while maintaining the linearity needed for adjacent-channel leakage ratio (ACLR) compliance in UMTS.
Рекомендуется
UMTS / 3G Picocell Transmitter
For picocell and small-cell 3G transmitters, the MD7IC2050NBR1's 10 W average output with 30.5 dB gain is well matched to the +33 to +40 dBm typical picocell downlink power budget. The integrated enable/disable pin allows fast standby / sleep sequencing required by picocell energy-saving standards without cycling the 28 V rail. Per NXP, the on-chip ESD protection simplifies IEC 61000-4-2 compliance at the antenna port, and the >5 ohm output impedance allows a compact microstrip output network in the small-form-factor picocell chassis. The TO-272 WB-14 footprint enables single-sided PCB layouts with backside copper heat-spreading, ideal for the compact thermal envelope of an outdoor picocell radio head.
Рекомендуется
Cellular Repeater / DAS Power Stage
Distributed antenna systems (DAS) and cellular repeaters for in-building coverage often require a robust 1.9-2.1 GHz PA stage. The MD7IC2050NBR1's 30.5 dB gain and 10 W average W-CDMA output satisfy the typical -33 dBm input to +40 dBm output power budget of a single-cell DAS remote unit. Per the NXP datasheet, the multi-stage internal architecture provides high reverse isolation, easing stability concerns when the PA is cascaded with bandpass filters and attenuators. The 225 C capable plastic package tolerates the enclosed, poorly cooled DAS enclosure environment. Compared with hybrid MIC PA modules, this integrated approach reduces tuning labor in volume manufacturing.
Рекомендуется
1880-2050 MHz Multi-Band PA Line-up
Although characterized at 1.88-2.1 GHz, the MD7IC2050NBR1 is usable from 1750-2050 MHz per NXP, allowing it to cover DCS-1800 and AWS-1 with a retuned output matching network. Designers building a multi-band PA line-up for global UMTS / LTE bands 1, 2, 4 can use a single PCB layout with band-selectable output filters. Per NXP, the >5 ohm output impedance is broadband enough to support a tunable matching network across 1750-2050 MHz. This reduces SKU count and qualification cost versus maintaining separate PA line-ups for each band.
Рекомендуется
RF Power Stage for Test & Measurement
Test and measurement setups for UMTS handset conformance and base-station conformance need a stable, repeatable 1.9-2.1 GHz power source at the 10 W average level. The MD7IC2050NBR1's well-characterized large-signal impedance parameters and common-source S-parameters, documented in the NXP datasheet, allow precise harmonic-balance and load-pull simulation - critical for system test engineers building reference stimulus sources. The integrated on-chip matching eliminates the variable of external LC tuning, improving measurement repeatability between test fixtures. The 28 V single-supply operation simplifies lab bench wiring versus higher-voltage discrete LDMOS parts.
Рекомендуется
Industrial / Aerospace Telemetry PA
Non-cellular telemetry and aerospace data links in the 1.9-2.1 GHz band benefit from the MD7IC2050NBR1's ruggedness and wide temperature tolerance. Per NXP, the 225 C capable plastic package and integrated ESD protection suit airborne and industrial environments where vibration and ESD exposure are concerns. The 30.5 dB gain eliminates a driver stage, reducing payload weight in UAV / aerospace telemetry applications. Compared with hybrid MIC amplifier modules, this monolithic integrated PA delivers better gain flatness and lower part-to-part variation in production telemetry transceivers.
Рекомендуется
Сводка рекомендуемых товаров
Справочные инженерные данные для MD7IC2050NBR1 — сравнение, рекомендации по проектированию и информация о соответствии.
Руководство по выбору
Сравнение с аналогами
| Параметр | Этот товар | MD7IC2050NR1 | MD7IC2050GNR1 | MW7IC2040NR1 | MW7IC930NR1 | MW6S004NT1 |
|---|---|---|---|---|---|---|
| Brand | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors |
| Package | TO-272 WB-14 (CASE 1618-02) | TO-272 WB-14 - same | TO-272 WB-14 - same | TO-272 WB-14 family - same land pattern | TO-272 WB-14 family - same land pattern | TO-272 WB-14 family - same land pattern |
| Supply Voltage | 28 V | 28 V - same | 28 V - same | 28 V | 28 V | 28 V |
| Enable / Disable | Integrated (with quiescent temp comp) | Integrated - same | Integrated - same | Integrated (NXP 7-series) | Integrated (NXP 7-series) | Integrated (NXP 6-series) |
| On-Chip Input Matching (50 ohm, DC blocked) | Yes | Yes - same | Yes - same | Yes (NXP 7-series) | Yes (NXP 7-series) | Yes (NXP 6-series) |
| RoHS Compliance | Compliant | Compliant | Compliant | Compliant | Compliant | Compliant |
Ключевые отличия
- Fully integrated on-chip matching (50 ohm input, >5 ohm output) (против MW7IC2040NR1)
- Integrated quiescent current temperature compensation (против MW6S004NT1)
- 30.5 dB gain in a single multi-stage package (против MW7IC930NR1)
- 10 W average W-CDMA output in plastic 225 C package (против MD7IC2050GNR1)
Заметки по проектированию
Estimated: At 10 W average W-CDMA output with PAR ~7-8 dB and a 35% PA drain efficiency typical for this class, the device dissipates approximately 18-20 W of heat. The CASE 1618-02 package should be soldered to a copper heat-spreader area of at least 10 cm x 10 cm with thermal vias to the inner / opposite-side ground plane; without this the junction temperature will exceed the 225 C package rating under continuous W-CDMA. Use a thin layer of thermal compound if mounted to an external heatsink.
Lay out the 50 ohm input microstrip directly to the RFIN pin using a controlled-impedance trace on the top layer with continuous ground beneath. Keep the >5 ohm output network trace as short as practical to minimize microstrip dispersion; per NXP the output network should be tuned with the large-signal impedance parameters (not the small-signal S-parameters) provided in the datasheet for accurate harmonic-balance simulation. Place gate-bias decoupling capacitors as close to the VGG pin as possible to prevent low-frequency oscillation.
Do not exceed 32 V on the drain supply (per datasheet) - operation above 32 V without proper derating can cause catastrophic LDMOS failure. The enable pin must be driven logic-low for proper shutdown; leaving it floating can cause the part to draw excessive quiescent current or fail to bias correctly. Avoid routing digital control lines near the RF output trace - the high-output power can couple into the EN line and cause spurious turn-on. Always verify the bias sequencing (VGG before VDD) during board bring-up to prevent in-rush current damage.
Use multiple bond-side ground vias around the package center-bar to provide a low-inductance RF return for both input and output networks. Stitch the top-layer ground with vias on a 2-3 mm pitch around the entire RF path to suppress parallel-plate mode resonances. Per NXP application notes, keep all bias-rail ferrite beads at least 5 mm away from the RF output trace to prevent 2nd-harmonic energy loss into the bias network.
Информация о соответствии
RoHS compliance per NXP datasheet (MD7IC2050N family datasheet). Reach compliance typical for NXP plastic overmold packages. AEC-Q100 not applicable - this is an RF power amplifier, not an automotive-qualified IC. Lead-free per NXP RoHS statement. Halogen-free status not explicitly stated in the datasheet - set to unknown.
