MD7P19130HR3 - 40W, 1990 MHz RF Power LDMOS | NXP
Артикул: MD7P19130HR3 ✓ Активен| Кол-во | Цена за ед. | Итого |
|---|---|---|
| 1 | $95 | $95,00 |
| 10 | $89.5 | $895,00 |
| 100 | $82 | $8.200,00 |
| 500 | $75 | $37.500,00 |
| 1.000 | $69.5 | $69.500,00 |
MD7P19130HR3 Обзор
A RF power MOSFET (also called RF power LDMOS transistor) is a lateral double-diffused metal-oxide-semiconductor field-effect transistor optimized for high-frequency, high-power RF amplification. Within the amplifier hierarchy, RF power MOSFETs sit below GaN HEMTs and SiC MESFETs in raw power density per unit area, but offer the best cost-per-watt in sub-3 GHz macro/micro base-station transmitters. They integrate into Doherty, push-pull, and class-AB final stages where 30-50 V operation and high saturated drain current are required.
Key performance highlights include a 28 V typical drain supply, an IDQ of 1250 mA quiescent bias, a frequency coverage of 1930 MHz to 1990 MHz (the entire 3GPP Band 1 / PCS downlink), 20 dB typical power gain, and 30% drain efficiency at rated Pout. The lateral N-channel enhancement-mode process is built on NXP's seventh-generation Airfast platform, which improves thermal resistance compared to older NI-780 variants.
Typical applications include 3GPP Band 1 (IMT-2000 / PCS) macro base stations, micro/pico-cell W-CDMA power amplifiers, multi-carrier UMTS final stages, and broadband 1.8-2.0 GHz industrial transmitters. Designers favor this part for its integrated ESD protection and broadband matching stability across the full PCS uplink and downlink sub-bands.
When designing with this device, ensure the heatsink spreader holds the case flange below 200 C with adequate airflow; the ceramic NI-780-4 flange is the primary thermal path and a minimum 4 oz copper footprint under the lead frame is required for proper RF grounding.
Аналоги без доработки для MD7P19130HR3 — тот же корпус, pin-to-pin совместимость. Компоненты в других корпусах, требующие переработки PCB, исключены.
Варианты в этой серии
Модели той же серии, совместимые без доработки с MD7P19130HR3 (тот же форм-фактор и посадочное место) — отличается по Drain Efficiency, Frequency Range, Input Signal PAR, Mounting Type, Package / Case.
Инструмент быстрого сравнения — выберите альтернативные компоненты для сравнения бок о бок:
MRF8S19140HR3
✅ Прямая замена ⚠️ Характеристики не проверены📋 Справочный аналог (нет в каталоге)
MD7P19130HSR3
✅ Прямая замена ⚠️ Характеристики не проверены✓ В наличии
$65.1 / шт.
Открыть даташит →MRF8P19080HR3
✅ Прямая замена ⚠️ Характеристики не проверены📋 Справочный аналог (нет в каталоге)
MD7P19130HR3 Максимальные параметры и электрические характеристики
| Тип транзистора | LDMOS (Dual), N-Channel Enhancement-Mode Lateral |
| Frequency Range | 1.93 GHz to 1.99 GHz |
| Typical Drain Voltage (VDD) | 28 V |
| Drain Voltage - Rated | 65 V |
| Quiescent Drain Current (IDQ) | 1250 mA |
| Output Power (Avg, W-CDMA) | 40 W |
| Power Gain | 20 dB (typical at Pout = 40 W) |
| Drain Efficiency | 30% (typical at Pout = 40 W, W-CDMA) |
| ACPR | -36 dBc at 5 MHz offset (3.84 MHz channel) |
| Input Signal PAR | 7.5 dB at 0.01% CCDF |
| Output Signal PAR | 6 dB at 0.01% CCDF |
| Корпус / Типоразмер | NI-780-4 (Case 465M-01, Style 1), ceramic flange |
| Тип монтажа | Surface Mount (bolt-down flange) |
| Technology | Airfast LDMOS, lateral N-channel |
Конфигурация выводов MD7P19130HR3
| Контакт 1 | Drain — RF output / drain terminal (matched to 50 ohm) |
| Контакт 2 | Gate — RF input / gate terminal (matched to 50 ohm) |
| Контакт 3 | Source / Flange — DC ground and thermal path through the ceramic flange |
MD7P19130HR3 DC Область безопасной работы
Типичное применение
MD7P19130HR3 подходит для 6 применениеs: 3GPP Band 1 W-CDMA Macro Base Station Final Stage, Doherty Power Amplifier for Cellular Infrastructure, Micro / Pico Cell W-CDMA Power Amplifiers, LTE Band 1 / 5G NR n1 Small-Cell Transmitter, Industrial / Scientific RF Transmitters in 1.9 GHz Band, Multi-Carrier UMTS Final-Stage Driver.
3GPP Band 1 W-CDMA Macro Base Station Final Stage
The MD7P19130HR3 is a primary fit for the final-stage power amplifier in 1930-1990 MHz 3GPP Band 1 macro base stations. With 28 V operation, 40 W average output, 20 dB power gain, and 30% drain efficiency under single-carrier W-CDMA with 7.5 dB PAR, it provides the power density and spectral cleanliness required for UMTS release-99 ACPR masks. The lateral N-channel enhancement-mode structure enables class-AB biasing with thermal stability across the full Band 1 downlink.
Рекомендуется
Doherty Power Amplifier for Cellular Infrastructure
In a two-way Doherty PA the MD7P19130HR3 can serve as both the carrier and peaking device because of its consistent gain profile across the 1930-1990 MHz Band 1 range. The -36 dBc ACPR at 5 MHz offset and 6 dB output PAR at the 0.01% CCDF point give linearizable headroom for digital pre-distortion. Designers pair the device with a 90-degree quadrature coupler and a 28 V drain modulator to extract the back-off efficiency benefits of the Doherty topology.
Рекомендуется
Micro / Pico Cell W-CDMA Power Amplifiers
Smaller-cell deployments that use 40 W average-output transistors in single-ended or push-pull configurations also target the MD7P19130HR3. The NI-780-4 ceramic case provides a robust thermal interface for confined micro-cell enclosures, while the 20 dB power gain simplifies the upstream driver chain. Drain efficiency at 30% keeps power consumption within the limited micro-cell thermal envelope, even at maximum output.
Рекомендуется
LTE Band 1 / 5G NR n1 Small-Cell Transmitter
Although characterized primarily for W-CDMA, the MD7P19130HR3's 1930-1990 MHz passband, 28 V rail, and 40 W average output lend themselves to LTE Band 1 and 5G NR n1 small-cell transmitters where the modulation PAR is comparable. The -36 dBc ACPR at 5 MHz offset meets LTE release-8 spectral mask requirements when combined with DPD linearization. n1 carrier aggregation demands careful gain and efficiency validation but is workable with this device in lower-bandwidth small cells.
Рекомендуется
Industrial / Scientific RF Transmitters in 1.9 GHz Band
Industrial, scientific, and medical RF equipment that operates in the unlicensed or lightly-regulated portions around 1.9 GHz can use the MD7P19130HR3 as a high-power final-stage amplifier. Its 28 V operation and 65 V drain rating give the headroom needed for continuous-duty industrial RF generators. The package's bolt-down flange simplifies chassis-mount integration, where reliable thermal contact is critical for round-the-clock operation.
Рекомендуется
Multi-Carrier UMTS Final-Stage Driver
Multi-carrier UMTS transmitter designs that combine several W-CDMA carriers onto a single final stage also see the MD7P19130HR3 used as a workhorse. Its 40 W average capability at 30% drain efficiency delivers competitive cost-per-watt, while the lateral N-channel enhancement-mode process scales cleanly across the full Band 1 downlink. Properly designed output matching preserves linearity across the multi-carrier CCDF envelope.
Рекомендуется
Сводка рекомендуемых товаров
Справочные инженерные данные для MD7P19130HR3 — сравнение, рекомендации по проектированию и информация о соответствии.
Руководство по выбору
Сравнение с аналогами
| Параметр | Этот товар | MRF8S19140HR3 | MD7P19130HSR3 | MRF8P19080HR3 |
|---|---|---|---|---|
| Package | NI-780-4 (Case 465M-01, Style 1) | NI-780-4 - same | NI-780-4 - same | NI-780-4 - same |
| Brand | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors |
| Frequency Range | 1930-1990 MHz | 1930-1990 MHz | 1930-1990 MHz | 1805-1920 MHz |
| Drain Voltage | 28 V | 28 V | 28 V | 28 V |
| Output Power (W-CDMA Avg) | 40 W | 40 W | 40 W | 8 W |
| Power Gain | 20 dB | 17.5 dB | 20 dB | 15 dB |
| Drain Efficiency | 30% | 32% | 30% | 27% |
| Transistor Type | LDMOS (N-Channel) | LDMOS (N-Channel) | LDMOS (N-Channel) | LDMOS (N-Channel) |
Ключевые отличия
- Tuned specifically for the 1930-1990 MHz Band 1 downlink (против MRF8P19080HR3)
- 30% drain efficiency at 40 W W-CDMA with -36 dBc ACPR (против MRF8S19140HR3)
Заметки по проектированию
Estimated: At 40 W W-CDMA Pout with 30% drain efficiency, the device dissipates roughly 93 W continuously. The NI-780-4 ceramic flange is the primary thermal path; use a thermal interface material rated at <=0.5 C/W to keep the junction below the published 200 C limit. Mounting torque to the heatsink should follow the datasheet mechanical drawing, and the PCB copper under the flange should be at least 4 oz for RF grounding and heat spreading.
RF input and output traces must be 50 ohm controlled-impedance microstrip on a low-loss substrate such as Rogers RO4350B or Arlon AD255C. Keep the gate and drain bond leads short; the gate bond-wire inductance directly impacts gain at 1.99 GHz, so place the input matching network within a few millimeters of the gate pad. Stitching vias around the substrate edges help suppress parallel-plate modes that can degrade efficiency.
Do not exceed the 65 V drain-voltage rating, even under transient load-pull or output VSWR mismatch. Input drive should be limited to keep the gate below the turn-on threshold during turn-off transients. Bias sequencing matters: bias the gate to its quiescent point before ramping VDD, and gate-off first when shutting down. Without proper sequencing the device can experience avalanche breakdown at the gate-drain overlap region.
Информация о соответствии
RoHS / REACH / lead-free status was not present in the verified data set and should be confirmed from the NXP material declaration or latest datasheet revision. Part is a base-station power transistor (not AEC-Q100).
