MHT1008NT1515 - 12.5W RF LDMOS 2450MHz ISM N-Channel | NXP
Артикул: MHT1008NT1515 ✓ Активен| Кол-во | Цена за ед. | Итого |
|---|---|---|
| 1 | $1.49 | $1,49 |
| 10 | $1.34 | $13,40 |
| 100 | $1.19 | $119,00 |
| 500 | $1.05 | $525,00 |
| 1.000 | $0.94 | $940,00 |
MHT1008NT1515 Обзор
RF power LDMOS transistors like the MHT1008NT1515 sit inside a broader power-semiconductor hierarchy that includes silicon bipolar RF transistors, GaN-on-SiC HEMTs, and SiC RF BJTs. Lateral MOSFETs in particular combine the high input impedance of MOSFETs with thermally robust ceramic packages, and they remain the dominant workhorse for sub-3 GHz continuous-wave power stages below ~50 W. The MHT1008 family is the 12.5 W tier above the lower-power MHT1007 and below higher-power 25 W–50 W siblings, occupying a sweet spot for compact consumer microwave ovens.
Key specifications include 65 V minimum drain-source breakdown (V(BR)DSS), a 1.6 V gate threshold (VGS(th)), continuous drain current handling suitable for 12.5 W class-AB operation, and total power dissipation rated at 48.1 W with appropriate PCB cooling. The part is rated for junction temperatures from -40 °C to +150 °C, enabling harsh-environment industrial installations. A wide operating bandwidth around 2.4 GHz–2.5 GHz supports the full 802.11 b/g/n Wi-Fi-adjacent ISM band.
Typical applications include solid-state consumer microwave ovens, RF plasma lighting drivers, industrial RF heating and drying, medical RF ablation at low power, and 2.45 GHz continuous-wave scientific instrumentation. The high gain reduces driver-stage complexity, and the lateral MOSFET architecture simplifies biasing versus bipolar alternatives that require regulated quiescent current.
When designing with this device, ensure the drain bias network uses proper RF chokes and bypass capacitors per the reference design in the NXP datasheet, and that the thermal pad is soldered to a copper heat spreader. Avoid exceeding the 28 V typical operation maximum and maintain VSWR below 3:1 to prevent device stress.
This page synthesizes distributor pricing, package information, and cross-brand perspective from public sources - all cross-referenced with the NXP MHT1008N datasheet - to help RF design engineers evaluate the MHT1008NT1515 for 2.45 GHz ISM power stages.
Аналоги без доработки для MHT1008NT1515 — тот же корпус, pin-to-pin совместимость. Компоненты в других корпусах, требующие переработки PCB, исключены.
Варианты в этой серии
Модели той же серии, совместимые без доработки с MHT1008NT1515 (тот же форм-фактор и посадочное место) — отличается по Manufacturer, Mounting Type, Operating Frequency, Part Number.
Инструмент быстрого сравнения — выберите альтернативные компоненты для сравнения бок о бок:
MHT1008NT1
✅ Прямая замена✓ В наличии
$9.55 / шт.
Открыть даташит →MHT1007NT1
✅ Прямая замена📋 Справочный аналог (нет в каталоге)
MHT1008NT1515 Максимальные параметры и электрические характеристики
| Manufacturer | NXP Semiconductors (formerly Freescale) |
| Part Number | MHT1008NT1515 |
| Device Type | RF Power LDMOS Transistor, N-Channel Enhancement-Mode |
| Operating Frequency | 2450 MHz (ISM band) |
| Output Power (CW) | 12.5 W |
| Drain-Source Voltage V(BR)DSS | 65 V (minimum) |
| Gate Threshold Voltage VGS(th) | 1.6 V |
| Typical Gain | 20.9 dB at 2.45 GHz |
| Drain Bias (typical) | 28 V |
| Total Power Dissipation | 48.1 W |
| Рабочая температура перехода | -40 °C to +150 °C |
| Корпус | PLD-1.5W (PLD-1) ceramic flange |
| Тип монтажа | Surface Mount / Flange Mount with heat spreader |
| Статус RoHS | Compliant |
| Technology | LDMOS (Laterally Diffused MOSFET) |
Конфигурация выводов MHT1008NT1515
| Контакт 1 | GATE — RF input / gate bias (requires DC block + bias tee) |
| Контакт 2 | DRAIN — RF output / drain bias (bolted flange with thermal pad) |
| Контакт 3 | SOURCE — Source / ground reference tied to flange |
| Контакт 4 | FLANGE — Thermal pad and source ground - must be soldered to PCB ground plane |
MHT1008NT1515 Область безопасной работы
Типичное применение
MHT1008NT1515 подходит для 7 применениеs: Solid-State Consumer Microwave Oven, Industrial RF Heating and Drying, RF Plasma Lighting Driver, Scientific 2.45 GHz Research Instrumentation, Medical RF Ablation (Low Power), RF Energy in Automotive & Wireless EV Charging, Continuous-Wave Jammer & Test Source.
Solid-State Consumer Microwave Oven
The MHT1008NT1515 is purpose-built for solid-state replacement of 2.45 GHz magnetron tubes in compact consumer microwave ovens. Its 12.5 W CW output and 20.9 dB gain at 2.45 GHz, combined with 28 V biasing, allow a single device to drive the cavity feed with enough headroom for cooking loads up to several hundred watts when combined with a power-combined amplifier array. The PLD-1.5W ceramic flange bolts directly to a copper heat spreader inside the appliance chassis, providing the thermal mass required for continuous-cooking duty cycles. Compared to a magnetron, this LDMOS approach enables precise RF power control, faster startup, and lower standby consumption - critical for modern energy-rated kitchen appliances.
Рекомендуется
Industrial RF Heating and Drying
The MHT1008NT1515 supports 2.45 MHz-adjacent industrial RF heating and drying lines for textile, paper, and pharmaceutical processes. Its 65 V drain breakdown and 48.1 W dissipation rating tolerate the dynamic load impedance presented by wet materials moving through the applicator. The 20.9 dB gain simplifies driver-chain design - a single small-signal RF transistor can drive this LDMOS to full output. PLD-1.5W flange mounting enables through-chassis heat extraction in factory-floor equipment. Operating junction temperatures up to +150 °C accommodate elevated ambient conditions near industrial dryers without derating.
Рекомендуется
RF Plasma Lighting Driver
The MHT1008NT1515 is well-matched to 2.45 GHz plasma light-source drivers used in high-efficiency industrial and architectural lamps. Its N-channel enhancement-mode architecture allows simple class-AB biasing from a positive gate supply, while the high drain breakdown protects against the reflected-power transients common when striking plasma. The 1.6 V gate threshold provides clean turn-on characteristics without false triggering from bias-network noise. Mounted on a PLD-1.5W ceramic flange, the device maintains stable RF performance through the warm-up phase as the plasma load impedance settles.
Рекомендуется
Scientific 2.45 GHz Research Instrumentation
The MHT1008NT1515 supports continuous-wave scientific instrumentation at 2.45 GHz, including plasma research reactors, microwave chemistry apparatus, and material-dielectric test fixtures. Its -40 °C to +150 °C operating junction temperature range enables both cryogenic-vacuum-chamber experiments and high-temperature accelerated-aging studies. The documented S-parameters and reference design curves allow researchers to predict gain and efficiency under non-standard load conditions. Reel-packaging consistency (T1515 suffix) supports repeatable experiment-to-experiment comparisons where batch variation must be minimized.
Рекомендуется
Medical RF Ablation (Low Power)
The MHT1008NT1515's continuous-wave 12.5 W output at 2.45 GHz suits low-power medical RF ablation and tissue-coagulation research where precise energy delivery is required. The high gain simplifies the analog feedback loop controlling output power, while the 65 V drain breakdown tolerates the highly variable impedance of biological tissue. PLD-1.5W flange mounting enables direct attachment to the medical-device chassis for clean EMI grounding. Note: this is a research-grade application - production medical devices require additional regulatory qualification beyond component datasheet ratings.
Рекомендуется
RF Energy in Automotive & Wireless EV Charging
The MHT1008NT1515 supports emerging automotive RF-energy applications including cabin heating via 2.45 GHz phased arrays and wireless EV charging pilots that explore 2.45 GHz bands. Its -40 °C cold-start rating meets automotive under-hood temperature requirements, while the 20.9 dB gain reduces driver complexity in space-constrained automotive modules. The high drain breakdown withstands inductive kickback from resonant heating loads. NXP's automotive-grade LDMOS variants (separate part numbers) extend the family, but this industrial part is a useful reference for non-safety-critical RF energy experiments.
Рекомендуется
Continuous-Wave Jammer & Test Source
The MHT1008NT1515 functions as a low-cost continuous-wave RF source for EMC test ranges, jammer development, and 2.4 GHz sensor excitation. The 12.5 W output easily overpowers commercial Wi-Fi access points for range testing, while the 65 V breakdown tolerates the infinite-VSWR conditions encountered during antenna disconnect. The PLD-1.5W flange provides the thermal headroom needed for long-duration CW test cycles. Test engineers value the part's documented datasheet curves that allow quick gain-stage budgeting without prototype iteration.
Рекомендуется
Сводка рекомендуемых товаров
Справочные инженерные данные для MHT1008NT1515 — сравнение, рекомендации по проектированию и информация о соответствии.
Руководство по выбору
Сравнение с аналогами
| Параметр | Этот товар | MHT1008NT1 | MHT1007NT1 |
|---|---|---|---|
| Brand | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors |
| Package | PLD-1.5W (PLD-1) ceramic flange | PLD-1.5W (PLD-1) ceramic flange - same | PLD-1.5W (PLD-1) ceramic flange - same |
| Operating Frequency | 2450 MHz ISM | 2450 MHz ISM | 2450 MHz ISM |
Ключевые отличия
- T1515 reel-packaging suffix offers factory-lot traceability (против MHT1008NT1)
- 12.5 W CW output at 2.45 GHz in PLD-1.5W ceramic flange (против MHT1007NT1)
- Documented 20.9 dB typical gain reduces driver complexity (против Generic 2.45 GHz RF MOSFETs)
Заметки по проектированию
The MHT1008NT1515 PLD-1.5W ceramic flange must be bolted or soldered to a copper or aluminum heat spreader. Estimated: at 12.5 W CW output with ~55% drain efficiency, the device dissipates approximately 10.3 W internally; a heat spreader of at least 50 cm² with 2 mm copper thickness is required to keep junction temperature rise below 50 °C in still air. Forced-air cooling or a heatsink is recommended for continuous-duty applications such as microwave ovens and industrial dryers.
The drain bias network must use a high-Q RF choke (typically 100 nH to 220 nH) rated for the full DC drain current, plus a 1 nF to 10 nF bypass capacitor stack combining C0G/NP0 ceramic for high-frequency decoupling. The gate bias network similarly requires an RF choke to isolate the bias supply from the RF path, with a low-ESR electrolytic or tantalum capacitor plus ceramic bypass for stability. All bias lines should be routed perpendicular to the RF input/output traces to minimize coupling.
Common pitfalls when designing with the MHT1008NT1515 include: (1) operating above 28 V drain bias without confirming the 65 V breakdown margin; (2) failing to provide proper RF bypassing on the gate bias line, leading to low-frequency oscillations; (3) neglecting source-lead grounding inductance, which can degrade gain and stability; (4) mismatched output networks causing high VSWR that may exceed the 3:1 safe operating limit. Always follow the reference design in the NXP MHT1008N datasheet for first-pass success.
RF layout for the MHT1008NT1515 should follow microstrip or stripline techniques with controlled-impedance 50 Ω traces on the lowest-loss PCB layer. Place input and output matching networks as close to the gate and drain leads as possible, with the source flange providing a continuous ground return path. Keep bias chokes and bypass capacitors on a separate PCB layer or zone, and use multiple via arrays stitching the flange-mounting holes to the internal ground plane to minimize parasitic source inductance.
Информация о соответствии
RoHS compliance confirmed via JLCPCB component listing and NXP environmental documentation. Industrial-grade part - not AEC-Q100 qualified; choose NXP automotive-grade LDMOS variants for vehicle applications. Halogen-free status not explicitly stated in distributor data and marked unknown.
