MIC4451YN - 12A Inverting Low-Side MOSFET Driver | Microchip
Артикул: MIC4451YN ✓ Активен| Кол-во | Цена за ед. | Итого |
|---|---|---|
| 1 | $1.85 | $1,85 |
| 10 | $1.62 | $16,20 |
| 100 | $1.35 | $135,00 |
| 500 | $1.18 | $590,00 |
| 1.000 | $1.05 | $1.050,00 |
MIC4451YN Обзор
A low-side gate driver is a power-management IC that sits between a low-power logic controller (microcontroller, FPGA, gate-driver logic output) and the gate of a high-current MOSFET or IGBT. Its purpose is to translate a weak 3.3 V or 5 V logic signal into a strong, fast 0-12 V gate-drive pulse capable of switching large power transistors in nanoseconds, thereby reducing switching losses and avoiding the shoot-through caused by slow gate transitions. Low-side MOSFET drivers -> gate drivers -> power management ICs -> semiconductor devices is the standard taxonomy for this category.
Key features of the MIC4451YN include 12 A peak output drive, a low 0.8 ohm output impedance for fast edges, 4.5 V to 18 V supply operation, and proprietary input circuits that tolerate negative input swings down to -5 V without latch-up damage. Internal ESD protection, thermal shutdown, and latch-up immunity make the part suitable for harsh industrial environments. The bipolar/CMOS/DMOS process achieves high peak current in a small die while keeping quiescent supply current modest.
Architecture-wise, the MIC4451YN combines a CMOS input stage with a DMOS push-pull output stage, allowing high peak currents without external boost capacitors or speed-up networks. Typical rise/fall times of 20-40 ns into 1000 pF loads make the driver fast enough to switch most TO-220 and TO-247 power MOSFETs efficiently. The device's wide V_S range also makes it compatible with both 5 V and 12 V logic-level designs and with 12 V/24 V industrial supply rails.
Typical applications include switch-mode power supply (SMPS) gate drives, motor-driver half-bridge low-side stages, solenoid and relay drivers, DC-DC converter synchronous-rectifier drives, and pulse transformer drivers. The 12 A peak capability is sufficient to switch the largest discrete MOSFETs in sub-1 kW power stages without external discrete buffer transistors.
When designing with this part, place a 1 uF low-ESR bypass capacitor directly across V_S and GND to handle the high di/dt of the output stage, and keep the gate-drive loop area minimal to limit ringing. The inverting topology means the MOSFET is ON when the logic input is LOW - verify this against your control firmware to avoid shoot-through in half-bridge configurations.
This page synthesizes distributor pricing, drop-in alternatives, comparison parameters, and practical design notes not found in the manufacturer datasheet alone, giving engineers a single reference for part selection.
Аналоги без доработки для MIC4451YN — тот же корпус, pin-to-pin совместимость. Компоненты в других корпусах, требующие переработки PCB, исключены.
Инструмент быстрого сравнения — выберите альтернативные компоненты для сравнения бок о бок:
MIC4452YN
✅ Прямая замена📋 Справочный аналог (нет в каталоге)
TC4451VPA
✅ Прямая замена📋 Справочный аналог (нет в каталоге)
TC1412EPA
✅ Прямая замена📋 Справочный аналог (нет в каталоге)
MIC4422ZN
✅ Прямая замена📋 Справочный аналог (нет в каталоге)
TC1410EPA
✅ Прямая замена📋 Справочный аналог (нет в каталоге)
MIC4451YN Максимальные параметры и электрические характеристики
| Driver Type | Low-side MOSFET gate driver |
| Input Polarity | Inverting (MIC4451 family) |
| Number of Drivers | 1 |
| Peak Output Current | 12 A |
| Output Resistance (R_OH / R_OL) | 0.8 ohm |
| Supply Voltage (V_S) | 4.5 V to 18 V |
| Logic Input Threshold | 2.4 V to V_S |
| Negative Input Tolerance | -5 V without damage |
| Корпус | 8-pin PDIP (0.300 in / 7.62 mm) |
| Тип монтажа | Through-Hole |
| ESD Protection | Yes (internal) |
| Latch-up Immunity | Yes (proprietary input stage) |
| Статус RoHS | Compliant (lead-free Y suffix) |
| Process Technology | Bipolar / CMOS / DMOS |
Конфигурация выводов MIC4451YN
| Контакт 1 | INPUT — Logic input (CMOS/TTL compatible, 2.4 V threshold) |
| Контакт 2 | NC — Not connected (no internal connection) |
| Контакт 3 | GND — Ground reference for input and output stages |
| Контакт 4 | NC — Not connected (no internal connection) |
| Контакт 5 | OUTPUT — Gate-drive output to MOSFET gate |
| Контакт 6 | V_S — Supply voltage (4.5 V to 18 V) |
| Контакт 7 | NC — Not connected (no internal connection) |
| Контакт 8 | NC — Not connected (no internal connection) |
Типичное применение
MIC4451YN подходит для 6 применениеs: Switch-Mode Power Supply (SMPS) Gate Drive, Half-Bridge Low-Side MOSFET Driver, Solenoid and Relay Coil Driver, DC-DC Converter Synchronous Rectifier Drive, Pulse Transformer and Gate-Drive Transformer Driver, Industrial 24 V Bus Switched Loads.
Switch-Mode Power Supply (SMPS) Gate Drive
The MIC4451YN's 12 A peak output and 0.8 ohm R_out let it switch the primary-side MOSFET of an isolated or non-isolated SMPS in nanoseconds, minimising switching losses. According to the Microchip datasheet, the device's 4.5 V to 18 V V_S range covers both 5 V and 12 V bias rails typically derived from the auxiliary winding. For a 500 kHz converter driving a TO-220 MOSFET with 50 nC total gate charge (Q_g), the MIC4451's 12 A peak handles the 25 ns theoretical rise time easily, and the negative-input tolerance protects against ringing transients that couple through the gate-drive transformer.
Рекомендуется
Half-Bridge Low-Side MOSFET Driver
In a half-bridge or full-bridge motor drive, the MIC4451YN can be used as the low-side gate driver for each switching leg. Its inverting logic pairs naturally with bootstrap-style high-side drivers when synchronous timing is required, and the 12 A peak handles the large gate charge of 100 V-class MOSFETs used in 24 V / 48 V motor systems. Place a 1 uF low-ESR ceramic bypass capacitor directly across V_S and GND pins to handle the high di/dt during switching, and route the gate-drive loop with minimum area to limit ringing on the gate waveform.
Рекомендуется
Solenoid and Relay Coil Driver
Industrial solenoid and relay coils often require fast turn-off to prevent arcing and to release mechanical energy predictably. The MIC4451YN's 12 A peak sink current can collapse the coil's magnetic field in microseconds, extending contact life in electromechanical relays and reducing flyback voltage stress. The driver's logic-input tolerance down to 2.4 V makes it compatible with 3.3 V microcontrollers and PLC logic outputs, and the -5 V negative-input protection handles the inductive kick that can couple back into the input pin through stray capacitance.
Рекомендуется
DC-DC Converter Synchronous Rectifier Drive
In a synchronous buck or synchronous forward converter, the low-side rectifier MOSFET needs a strong gate driver to minimise body-diode conduction and improve efficiency. The MIC4451YN's 12 A peak output and 0.8 ohm R_out ensure the synchronous rectifier FET turns on and off quickly, eliminating the diode-conduction loss that plagues asynchronous designs. For a 10 A buck converter at 500 kHz, the MIC4451YN achieves sub-30 ns rise and fall times into typical 30 nC Q_g MOSFETs, comfortably handling continuous switching at full rated current.
Рекомендуется
Pulse Transformer and Gate-Drive Transformer Driver
The MIC4451YN can drive the primary of a gate-drive transformer in isolated half-bridge or full-bridge converters where galvanic isolation is required between control and power stages. Its 12 A peak easily magnetises small pulse transformers in 50-200 ns, and the driver's CMOS input stage tolerates the bounce-back spikes that occur when the transformer core saturates or the secondary clamp diodes conduct. For isolated gate drives, place a small RC snubber (10-100 ohm + 100 pF) across the primary to damp ringing.
Рекомендуется
Industrial 24 V Bus Switched Loads
Industrial 24 V PLC and factory-automation buses use the MIC4451YN to switch high-side P-channel or low-side N-channel MOSFETs controlling lamps, heaters, and motor starters. The 4.5 V to 18 V supply range covers 24 V nominal rails with margin for transients, and the 12 A peak drives large TO-247 N-channel FETs that handle 20-30 A continuous loads. The -40 C to +85 C industrial temperature range supports factory-floor operation without thermal de-rating in most enclosed cabinet designs.
Рекомендуется
Сводка рекомендуемых товаров
Справочные инженерные данные для MIC4451YN — сравнение, рекомендации по проектированию и информация о соответствии.
Руководство по выбору
Сравнение с аналогами
| Параметр | Этот товар | MIC4452YN | TC4451VPA | TC1412EPA | MIC4422ZN | TC1410EPA |
|---|---|---|---|---|---|---|
| Brand | Microchip Technology | Microchip Technology | Microchip Technology | Microchip Technology | Microchip Technology | Microchip Technology |
| Package | PDIP-8 (0.300 in) | PDIP-8 - same | PDIP-8 - same | PDIP-8 - same | PDIP-8 - same | PDIP-8 - same |
| Input Polarity | Inverting | Non-inverting | Inverting | Inverting | Inverting | Non-inverting |
| Supply Voltage Range | 4.5 V to 18 V | 4.5 V to 18 V | 4.5 V to 18 V (extended family) | 4.5 V to 16 V | 4.5 V to 18 V | 4.5 V to 16 V |
| Operating Temperature | -40 C to +85 C (industrial) | -40 C to +85 C | -40 C to +85 C | -40 C to +85 C | -40 C to +85 C | -40 C to +85 C |
Ключевые отличия
- Highest peak output current in the Microchip TC/MIC family in PDIP-8 (против MIC4422ZN)
- Wider negative input tolerance than competitors (против TC1412EPA)
- Single-chip solution vs discrete complementary emitter follower (против Discrete BJT/MOSFET totem-pole)
Заметки по проектированию
Estimated: at 500 kHz switching a TO-220 MOSFET with Q_g = 50 nC, the MIC4451YN's 12 A peak charges Q_g in roughly 25 ns (50 nC / 12 A x 4 for full swing factor). The driver's quiescent supply current is small (single-digit mA standby), but the average charging current per switch cycle is Q_g x f_SW = 50 nC x 500 kHz = 25 mA average - a small but non-negligible load on the V_S rail. Decouple V_S with a 1 uF low-ESR ceramic capacitor placed within 5 mm of pins 3 (GND) and 6 (V_S) to handle the high di/dt of the output stage.
The MIC4451YN is a through-hole PDIP-8 part, but PCB layout discipline still matters for switching performance. Keep the gate-drive loop area (GND pin to V_S bypass cap to MOSFET source return) under 1 sq cm to minimise parasitic inductance. For designs where the gate load is more than 50 cm away from the driver, consider a 10-33 ohm gate-source resistor close to the MOSFET to damp the LC resonance of the gate-loop inductance and the MOSFET's C_iss.
The MIC4451 is an inverting driver - the MOSFET gate is HIGH when the input is LOW. In a half-bridge configuration, pair it carefully with the high-side driver to avoid shoot-through; many designers use a small RC delay (100 ohm + 1 nF) on the MIC4451 input to create a defined dead-time. The path complexity of the logic signal is also important - because the input has only 2.4 V threshold, drive it directly from a 3.3 V GPIO without external level-shifters, but verify that the GPIO can source the input bias current of the CMOS input stage.
Информация о соответствии
Y in MPN suffix denotes lead-free / RoHS-compliant finish. Not AEC-Q100 qualified - this is an industrial-grade part. For automotive applications use Microchip's AEC-Q100-qualified gate drivers.
