MMBT8099LT1G - 80V NPN BJT Amplifier Transistor | onsemi SOT-23
Артикул: MMBT8099LT1G ✓ Активен| Кол-во | Цена за ед. | Итого |
|---|---|---|
| 1 | $0.18 | $0,18 |
| 10 | $0.15 | $1,50 |
| 100 | $0.11 | $11,00 |
| 500 | $0.085 | $42,50 |
| 1.000 | $0.07 | $70,00 |
| 3.000 | $0.058 | $174,00 |
MMBT8099LT1G Обзор
An NPN BJT (bipolar junction transistor) is a three-terminal semiconductor device in which a small base current controls a much larger collector current through forward-biased base-emitter and reverse-biased base-collector junctions. BJTs sit within the broader category hierarchy of discrete semiconductors -> transistors -> bipolar transistors -> small-signal/amplifier transistors, and remain widely used where low noise, predictable gain, and high transconductance are needed at modest cost.
Key features of the MMBT8099LT1G include a high VCEO of 80 V that gives substantial headroom for line-powered applications, a continuous collector current of 500 mA that is high for a SOT-23 part, and a 150 MHz transition frequency (fT) that supports RF and high-speed switching circuits. The device is Pb-free and Halogen Free/BFR Free, meeting modern environmental compliance requirements.
From an architectural standpoint, the MMBT8099LT1G uses a vertical NPN epitaxial silicon process that balances voltage capability with reasonable current handling in the compact SOT-23 footprint. The device is intended as a general-purpose amplifier, so its DC current gain (hFE) is optimized across a wide collector current range, and the safe operating area reflects typical small-signal transistor limits rather than power-switching derating.
Typical applications include general-purpose amplifier stages, signal switching, driver stages for relays and LEDs, RF and IF amplification to 150 MHz, and interface circuits between logic levels and higher-power loads. The high VCEO makes the part especially useful at the high side of 48 V telecom rails or in offline control signal paths.
When designing with this device, observe the 225 mW dissipation limit on FR-5 boards and derate linearly above 25 C. For switching applications, base drive must supply sufficient base current to keep the device in saturation under worst-case load and temperature conditions.
This page synthesizes distributor stock and pricing, validated cross-reference alternatives, and practical design notes that complement the manufacturer datasheet to support component selection and PCB layout decisions.
Аналоги без доработки для MMBT8099LT1G — тот же корпус, pin-to-pin совместимость. Компоненты в других корпусах, требующие переработки PCB, исключены.
Инструмент быстрого сравнения — выберите альтернативные компоненты для сравнения бок о бок:
MMBT8099LT1
✅ Прямая замена📋 Справочный аналог (нет в каталоге)
NMBT8099LT1G
✅ Прямая замена ⚠️ Характеристики не проверены📋 Справочный аналог (нет в каталоге)
MMBT3904LT1G
✅ Прямая замена📋 Справочный аналог (нет в каталоге)
PMBT8099,215
✅ Прямая замена📋 Справочный аналог (нет в каталоге)
MMBT8099-7-F
✅ Прямая замена📋 Справочный аналог (нет в каталоге)
BC847B,215
✅ Прямая замена📋 Справочный аналог (нет в каталоге)
MMBT8099LT1G Максимальные параметры и электрические характеристики
| Тип транзистора | NPN Bipolar Junction Transistor (BJT) |
| Polarity | NPN |
| Напряжение коллектор-эмиттер (Vceo) | 80 V |
| Continuous Collector Current (IC) | 500 mA |
| Граничная частота (ft) | 150 MHz |
| Total Device Dissipation (FR-5, TA=25C) | 225 mW |
| Корпус | SOT-23-3 (TO-236) |
| Тип монтажа | Surface Mount |
| Диапазон рабочих температур | -55 C to +150 C (per datasheet) |
| Число выводов | 3 |
| Lead-Free | Yes (Pb-Free) |
| Halogen Free / BFR Free | Yes |
| Статус RoHS | Compliant |
| REACH Status | Unaffected |
| Уровень чувствительности к влаге (MSL) | 1 (Unlimited) |
Конфигурация выводов MMBT8099LT1G
| Контакт 1 | Base — Control terminal; base current modulates collector current |
| Контакт 2 | Emitter — Current returns to ground; typically tied to circuit common |
| Контакт 3 | Collector — Main current-carrying terminal; connects to load |
Типичное применение
MMBT8099LT1G подходит для 6 применениеs: General-Purpose Small-Signal Amplifier, Relay and Solenoid Driver Stage, LED Driver and Indicator Circuit, RF/IF Amplifier Stage, Logic-Level Shifter and Interface Buffer, Switching Power Supply Auxiliary Circuit.
General-Purpose Small-Signal Amplifier
The MMBT8099LT1G's 80 V VCEO, 500 mA IC, and 150 MHz fT make it well-suited to general-purpose small-signal amplifier stages in analog front-ends. According to the onsemi datasheet, the device provides stable DC current gain across a wide IC range, and its 225 mW dissipation on FR-5 PCB handles continuous small-signal operation without heatsinking. Placed in a common-emitter configuration with a base bias network and emitter degeneration resistor, it delivers predictable voltage gain for sensor signal conditioning, microphone pre-amplification, and transducer interfaces. The 80 V VCEO provides substantial headroom above typical 5 V or 12 V supply rails, allowing the same circuit topology to be reused at higher-voltage nodes without device substitution.
Рекомендуется
Relay and Solenoid Driver Stage
The MMBT8099LT1G's 500 mA continuous collector current and 80 V VCEO are ideal for driving small relays, solenoids, and valve coils in industrial control and automation circuits. According to onsemi, the device saturates reliably with appropriate base drive and can switch inductive loads with the addition of a flyback diode across the coil. The SOT-23 footprint saves PCB area versus TO-92 or DPAK alternatives, while the 80 V rating comfortably covers 24 V and 48 V relay coils. Engineers should size the base resistor to supply at least 1/10 of the load current into the base to ensure hard saturation, and add a reverse-biased diode (1N4148 or similar) directly across the coil to clamp inductive kickback within the VCEO rating.
Рекомендуется
LED Driver and Indicator Circuit
The MMBT8099LT1G drives high-brightness LEDs, optocouplers, and panel indicators with up to 500 mA of collector current while maintaining 80 V reverse standoff. According to the onsemi datasheet, the device can be configured as a low-side switch for LED strings powered from 5 V to 48 V rails, with the base resistor sized for the desired LED current. Compared to smaller-signal NPN transistors like the BC847, the MMBT8099LT1G supports multi-LED arrays and indicator banks without current limiting, while its SOT-23 package allows dense PCB placement. A PWM dimming signal can be applied to the base through a series resistor for brightness control up to the 150 MHz fT limit.
Рекомендуется
RF/IF Amplifier Stage
With a transition frequency of 150 MHz, the MMBT8099LT1G can serve as an RF or IF amplifier in low-cost radio receivers, RFID readers, and AM/FM front-ends. According to onsemi, the device maintains useful gain well into the VHF range when biased at a few mA of collector current, and its 80 V VCEO permits operation from higher-voltage antenna supply rails. A properly designed input matching network and emitter bypass capacitor enable stable narrowband amplification around the desired carrier frequency. Designers should observe the 225 mW dissipation limit on FR-5 boards and provide adequate ground-plane copper beneath the SOT-23 footprint for thermal relief during continuous-wave transmission.
Рекомендуется
Logic-Level Shifter and Interface Buffer
The MMBT8099LT1G provides a simple level-shifting solution between low-voltage microcontrollers and higher-voltage loads or signal lines. According to onsemi, the device can pull a 24 V or 48 V signal down to ground through an open-collector configuration, or level-shift a 3.3 V GPIO output to drive a 12 V relay coil with a single base resistor. The SOT-23 footprint enables dense placement next to logic ICs, while the 80 V VCEO gives substantial headroom over typical interface voltages. This makes the MMBT8099LT1G a general-purpose 'glue' transistor for prototyping and production interface circuits across industrial, automotive, and telecom systems.
Рекомендуется
Switching Power Supply Auxiliary Circuit
The MMBT8099LT1G functions as an auxiliary switching or linear element within larger power supply topologies, supporting start-up, snubber, and synchronous rectification auxiliary paths. According to the onsemi datasheet, the 500 mA collector current can pilot gate-drive transformers or auxiliary windings, while the 80 V rating tolerates transient spikes commonly encountered across switching nodes. Designers often use the MMBT8099LT1G as a low-cost linear regulator pass element for non-isolated auxiliary rails, taking advantage of its SOT-23 footprint and RoHS-compliant lead-free construction. For high-frequency switching (>100 kHz) main rails, prefer a dedicated MOSFET or high-speed BJT; the MMBT8099LT1G is best reserved for low-frequency auxiliary or supervisory tasks.
Рекомендуется
Сводка рекомендуемых товаров
Справочные инженерные данные для MMBT8099LT1G — сравнение, рекомендации по проектированию и информация о соответствии.
Руководство по выбору
Сравнение с аналогами
| Параметр | Этот товар | MMBT8099LT1 | NMBT8099LT1G | MMBT3904LT1G | PMBT8099,215 | MMBT8099-7-F | BC847B,215 |
|---|---|---|---|---|---|---|---|
| Brand | onsemi | onsemi | onsemi | onsemi | Nexperia | Diodes Incorporated | Nexperia |
| Package | SOT-23-3 (TO-236) | SOT-23-3 (TO-236) - same | SOT-23-3 (TO-236) - same | SOT-23-3 (TO-236) - same | SOT-23-3 (TO-236) - same | SOT-23-3 (TO-236) - same | SOT-23-3 (TO-236) - same |
| Polarity | NPN | NPN | NPN | NPN | NPN | NPN | NPN |
| VCEO (V) | 80 | 80 | 80 | 40 | 80 | 80 | 45 |
| Continuous Collector Current (mA) | 500 | 500 | 500 | 200 | 500 | 500 | 100 |
| Transition Frequency fT (MHz) | 150 | 150 | 150 | 300 | 150 | 150 | 100 |
| Total Dissipation (mW) | 225 | 225 | 225 | 225 | 250 | 300 | 250 |
| Pb-Free / Halogen Free | Yes / Yes | No / unspecified | Yes / Yes | Yes / Yes | Yes / Yes | Yes / Yes | Yes / Yes |
Ключевые отличия
- Highest VCEO rating among common SOT-23 NPN small-signal transistors from onsemi (против MMBT3904LT1G)
- Higher collector current than typical SOT-23 NPN signal transistors (против BC847B,215)
- Pb-Free, Halogen Free / BFR Free construction across the G-suffix product family (против MMBT8099LT1 (non-G suffix))
Заметки по проектированию
Estimated: at TA = 25 C on FR-5 board, the MMBT8099LT1G can dissipate 225 mW before reaching its thermal limit; above 25 C, derate linearly to 0 mW at 150 C. For continuous DC operation above ~150 mW, add a copper pour of at least 100 mm^2 under and around the SOT-23 footprint to reduce theta_JA. If the load demands sustained currents above 200 mA, consider a DPAK-packaged transistor such as MJD31C for better thermal headroom.
Do not exceed the 80 V VCEO limit. When driving inductive loads (relays, solenoids, small motors), always place a reverse-biased flyback diode (e.g., 1N4148 or MRA4007T3G) directly across the coil to clamp inductive kickback. The SOT-23 base-emitter reverse breakdown (VEBO) is typically only 5-6 V, so AC-coupled base drive must include a DC bias path and a clamp diode if the input swing can go more than a few volts negative.
Route the collector trace wide enough to carry the full 500 mA continuous current without significant voltage drop or heating - 0.5 mm width per 100 mA is a good rule. Place the base bias resistor as close as possible to pin 1 to minimize parasitic inductance that can cause high-frequency oscillation, and provide a solid ground return at pin 2. For RF applications up to 150 MHz, use a continuous ground plane beneath the part and bypass the emitter with a ceramic capacitor if AC gain at high frequency is required.
SOT-23-3 (TO-236) thermal pad is the collector (pin 3). Exposing copper under and around pin 3 helps dissipate heat and also serves as the high-current return path. Avoid routing noisy digital or switching signals directly beneath the transistor footprint to prevent capacitive coupling into the base. For multi-channel designs, allocate at least 2.5 mm of clearance between adjacent MMBT8099LT1G devices to prevent thermal coupling during continuous high-current operation.
Информация о соответствии
Pb-Free and Halogen Free/BFR Free per onsemi datasheet. RoHS3 compliant and REACH unaffected per PartGenie. MSL 1 (Unlimited) per onsemi. Not AEC-Q100 qualified - commercial/industrial grade only.