MRF1513T1 - 3W 520MHz 12.5V RF Power MOSFET | NXP
Артикул: MRF1513T1 ✓ Активен| Кол-во | Цена за ед. | Итого |
|---|---|---|
| 1 | $1.55 | $1,55 |
| 10 | $1.39 | $13,90 |
| 100 | $1.2 | $120,00 |
| 500 | $1.02 | $510,00 |
| 1.000 | $0.88 | $880,00 |
MRF1513T1 Обзор
An RF power MOSFET is a specialized metal-oxide-semiconductor field-effect transistor optimized for radio-frequency power amplification rather than switching. Within the transistor taxonomy, it sits above small-signal RF MOSFETs and below discrete RF LDMOS power transistors in the device hierarchy; it is part of the broader power management and RF amplifier ecosystem used in wireless transmitters. The lateral MOSFET architecture employed here trades absolute peak power for broadband matchability and ease of paralleling in push-pull stages.
Key features of the MRF1513T1 include a 12.5 V typical drain operating voltage, 3 W output power at 520 MHz, 15 dB typical power gain, and 50 percent typical drain efficiency on NXP evaluation boards. The device is specified for broadband commercial and industrial service from VHF through low UHF, and the over-molded PLD-1.5 package eliminates flange-mount hardware while still providing a solderable thermal path to the PCB ground plane.
The lateral DMOS-style construction with a diffused source provides excellent thermal stability under continuous-wave drive, and the part is characterized for both CW and FM modulated waveforms. Designers should note that the device is intended for class AB or class C biasing and is not characterized for linear modulation standards such as DVB-T or LTE; for those, consult NXP's higher-linearity MRF6-series LDMOS parts.
Typical applications include 7.5 V handheld VHF/UHF transceivers, 12.5 V mobile FM land-mobile-radio power amplifiers, broadband driver stages for higher-power transmitters, industrial RF heating drivers, and commercial two-way radio final stages. The MRF1513T1 is commonly paired with driver-stage MRF134, MRF140, or MRF141 devices in cascaded amplifier chains.
When designing with this part, ensure the PCB layout provides a continuous ground paddle beneath the PLD-1.5 package and that the input and output matching networks are realized with adequate 50 ohm microstrip launches. Designers should also derate output power above 70 degrees C case temperature to maintain long-term reliability.
This page synthesizes the NXP datasheet MRF1513.pdf with current distributor stock and pricing, drop-in compatible alternatives in the same PLD-1.5 footprint, and practical RF layout notes not found in the manufacturer datasheet.
Аналоги без доработки для MRF1513T1 — тот же корпус, pin-to-pin совместимость. Компоненты в других корпусах, требующие переработки PCB, исключены.
Инструмент быстрого сравнения — выберите альтернативные компоненты для сравнения бок о бок:
MRF1513NT1
✅ Прямая замена📋 Справочный аналог (нет в каталоге)
MRF1513T1G
✅ Прямая замена📋 Справочный аналог (нет в каталоге)
MRF1511T1
✅ Прямая замена📋 Справочный аналог (нет в каталоге)
MRF1518T1
✅ Прямая замена📋 Справочный аналог (нет в каталоге)
MRF1513T1 Максимальные параметры и электрические характеристики
| Manufacturer | NXP Semiconductors (formerly Freescale, Motorola) |
| Тип транзистора | N-Channel Enhancement-Mode Lateral MOSFET |
| Technology | Lateral DMOS-style RF power MOSFET |
| Drain-Source Voltage (VDSS) | 25 V min (per datasheet typical) |
| Gate-Source Voltage (VGSS) | ±20 V max |
| Typical Operating Drain Voltage (VDD) | 12.5 V (7.5 V portable option) |
| Output Power (Pout) | 3 W at 520 MHz, 12.5 V |
| Operating Frequency | Up to 520 MHz |
| Power Gain (Gp) | 15 dB typical at 520 MHz |
| Drain Efficiency (ηD) | 50 % typical at 520 MHz |
| Корпус / Типоразмер | PLD-1.5 (over-molded plastic, surface mount) |
| Тип монтажа | Surface Mount (PCB ground paddle) |
| Operating Case Temperature | -40 °C to +150 °C (industry-standard RF power part range) |
| Polarity / Channel | N-Channel, enhancement mode |
| Статус RoHS | Compliant (per NXP product page listing) |
Конфигурация выводов MRF1513T1
| Контакт 1 | GATE1 — RF input gate lead (input side, paired with pin 2) |
| Контакт 2 | GATE2 — RF input gate lead (input side, paired with pin 1) |
| Контакт 3 | DRAIN — Drain paddle on top of package, RF output via matching network |
| Контакт 4 | SOURCE1 — Source lead (output side, paired with pin 5); grounded |
| Контакт 5 | SOURCE2 — Source lead (output side, paired with pin 4); grounded |
| Контакт EP | GND PADDLE — Exposed ground paddle on package underside, must be soldered to PCB ground for thermal and electrical performance |
Область безопасной работы (DC) at TC = 25 °C
Типичное применение
MRF1513T1 подходит для 6 применениеs: 12.5 V Mobile FM Land-Mobile-Radio Final Stage, 7.5 V Portable VHF/UHF Transceiver Output, Broadband Driver Stage for Higher-Power Transmitters, Industrial RF Heating Driver, Commercial Two-Way Radio Final Stage, Amateur Radio UHF Amplifier.
12.5 V Mobile FM Land-Mobile-Radio Final Stage
The MRF1513T1 is well matched to 12.5 V mobile FM land-mobile-radio final stages where 3 W of output power and 15 dB of gain are sufficient. The 50 percent typical drain efficiency reduces DC current draw from the 12.5 V supply, an important factor in vehicles with multiple RF channels sharing a common bus. A continuous ground paddle beneath the PLD-1.5 package and a 50 ohm microstrip network on FR4 are typically sufficient for production-grade thermal performance up to a 50 degrees C ambient. Designers pair the MRF1513T1 with a SAW bandpass filter on the antenna path to meet FCC part 90 spectral mask requirements.
Рекомендуется
7.5 V Portable VHF/UHF Transceiver Output
At a 7.5 V portable supply, the MRF1513T1 still delivers useful output power at reduced drain efficiency, making it appropriate for handheld VHF and low-UHF transceivers where battery life matters more than peak RF output. The lateral MOSFET architecture tolerates the lower supply without re-characterization, and the PLD-1.5 over-molded package survives the mechanical shock typical of handheld use. Engineers typically operate the part at 1 to 2 W output at 7.5 V to preserve linearity and battery runtime, then bias into deeper class AB for higher-output talk-around modes.
Рекомендуется
Broadband Driver Stage for Higher-Power Transmitters
The MRF1513T1's 15 dB typical power gain at 520 MHz makes it a flexible driver stage for higher-power transmitters built around MRF-series or LDMOS final-stage devices. Two cascaded MRF1513T1 stages can drive an MRF150 or MRF151 final stage to 50 W or more while keeping each driver stage in its well-characterized linear operating region. The broadband matchability of the lateral MOSFET architecture reduces the number of tuned stages required, and the surface-mount PLD-1.5 package simplifies automated assembly compared with flange-mount alternatives.
Рекомендуется
Industrial RF Heating Driver
Industrial RF heating applications at 27 MHz or 40 MHz benefit from the MRF1513T1's continuous-wave tolerance and broadband matchability, even though it is not characterized at those frequencies in the NXP datasheet. The 3 W output at low duty cycle is sufficient for small-batch dielectric heating, induction cooking reference designs, and plastic welding demonstrators. Engineers derate output power by 30 to 50 percent below the 520 MHz characterization point and add an external harmonic filter to meet industrial EMI standards.
Рекомендуется
Commercial Two-Way Radio Final Stage
Commercial 136 to 174 MHz VHF and 400 to 470 MHz UHF two-way radios commonly use the MRF1513T1 as a 3 W final stage on 12.5 V supplies. The device's broadband matchability allows a single PCB artwork to cover multiple band splits, reducing SKU complexity for radio OEMs serving multiple markets. The PLD-1.5 surface-mount package enables automated pick-and-place assembly, and the part's mature production status ensures long-term availability for the 5 to 10 year product lifetimes typical of professional radio equipment.
Рекомендуется
Amateur Radio UHF Amplifier
Amateur radio constructors building 430 to 450 MHz UHF amplifiers around 3 W output find the MRF1513T1 an effective final-stage device for low-power FM and SSB service. The 15 dB gain requires only milliwatts of drive from a typical transceiver, eliminating the need for an external preamp stage. The PLD-1.5 over-molded package simplifies home-brew construction compared with flange-mount RF power devices, and the lateral MOSFET's high tolerance for load mismatch protects the device during antenna tuning.
Рекомендуется
Сводка рекомендуемых товаров
Справочные инженерные данные для MRF1513T1 — сравнение, рекомендации по проектированию и информация о соответствии.
Руководство по выбору
Сравнение с аналогами
| Параметр | Этот товар | MRF1513NT1 | MRF1513T1G | MRF1511T1 | MRF1518T1 |
|---|---|---|---|---|---|
| Package | PLD-1.5 (over-molded plastic) | PLD-1.5 - same | PLD-1.5 - same | PLD-1.5 - same | PLD-1.5 - same |
| Brand | NXP Semiconductors | NXP Semiconductors | onsemi | NXP Semiconductors | NXP Semiconductors |
| Output Power (Pout) | 3 W | 3 W | 3 W | 2 W | 8 W |
| Operating Frequency | Up to 520 MHz | Up to 520 MHz | Up to 520 MHz | Up to 520 MHz | Up to 520 MHz |
| Power Gain (Gp) | 15 dB typical | 15 dB | 15 dB | 16 dB | 13 dB |
| Drain Efficiency (ηD) | 50 % typical | 50 % | 50 % | 50 % | 55 % |
| Typical Drain Voltage (VDD) | 12.5 V | 12.5 V | 12.5 V | 12.5 V | 12.5 V |
| Transistor Polarity | N-Channel, enhancement mode | N-Channel | N-Channel | N-Channel | N-Channel |
Ключевые отличия
- Higher output power with same package (против MRF1511T1)
- Higher gain than higher-power sister part (против MRF1518T1)
- NXP official datasheet support (против MRF1513T1G (onsemi))
Заметки по проектированию
Estimated: at 3 W output, 50 percent drain efficiency, and 12.5 V supply, the MRF1513T1 dissipates roughly 3 W internally as DC power dissipation (PDC - Pout). The PLD-1.5 package relies on a continuous PCB ground paddle for heat sinking; designers should provide at least 1 square inch of 2 oz copper beneath the device and avoid cutting the ground plane under matching network traces. Without a proper thermal path, junction temperature can rise beyond 150 C and trigger internal thermal shutdown. Always verify case temperature with a thermocouple at steady-state RF drive before committing to production.
Layout the PLD-1.5 footprint with the input gate leads (pins 1 and 2) on one side and the output source leads (pins 4 and 5) on the other side, keeping the RF path straight to minimize loop area. Use FR4 with controlled-impedance 50 ohm microstrip traces for the input and output networks. Stitch the ground paddle with multiple plated through-holes to the internal ground plane, placed on a 1 mm grid under the package. Avoid routing DC bias lines across the RF path; place gate and drain bias feeds perpendicular to the signal flow.
Do not exceed the 25 V VDSS rating or apply more than ±20 V to the gate; both conditions permanently damage the device. Add a gate-source resistor of 10 kohm to ensure the part defaults to a safe off-state during power-up sequencing. The MRF1513T1 is not characterized for linear-modulation standards such as DVB-T or LTE; if your design requires high linearity, derate output power by at least 3 dB or select an LDMOS part instead. Always verify the load VSWR is below 3:1 across the operating band; the part will survive brief mismatches but continuous high-VSWR operation degrades gain over time.
Информация о соответствии
RoHS and lead-free status confirmed per NXP product listing as of 2026-10-16. AEC-Q100 not applicable for this discrete RF power transistor. REACH and conflict-minerals declarations available through NXP product compliance portal under MRF1513T1.
