MRF5S21150HR3 - 33W 2.11-2.17GHz W-CDMA RF LDMOS | NXP
Артикул: MRF5S21150HR3 ✓ Активен| Кол-во | Цена за ед. | Итого |
|---|---|---|
| 1 | $38.5 | $38,50 |
| 10 | $34.85 | $348,50 |
| 100 | $30.2 | $3.020,00 |
| 500 | $25.1 | $12.550,00 |
| 1.000 | $21.55 | $21.550,00 |
MRF5S21150HR3 Обзор
An RF power transistor is a discrete semiconductor that converts DC power into RF output at microwave or UHF frequencies; the LDMOS family in particular is widely used in cellular infrastructure because of its high gain, high efficiency, and excellent thermal stability. Within the power-management hierarchy the MRF5S21150H sits in the RF Power MOSFET sub-category, and from a system standpoint it is the final amplification stage between the driver amplifier and the antenna-combiner network of a multi-carrier W-CDMA radio unit.
Key features include 33 W average output power at 2.17 GHz, 12.5 dB power gain in the W-CDMA band, a 28 V typical drain supply, 1.3 A typical quiescent bias current, and 65 V drain-source breakdown rating per the manufacturer datasheet. The NI-880 ceramic flange package provides a low thermal-resistance path, which is essential for dissipating several hundred watts of waste heat in continuous base-station duty.
Architecturally the device is a laterally diffused MOS transistor with two bonding options - the HR3 suffix denotes the standard flange-mount orientation; the HSR3 variant (same datasheet) is the symmetrical bolt-down mirror. The same NXP die is reused across the MRF5S21150 family, sharing the 65 V breakdown and the 12.5 dB W-CDMA gain figure.
Typical applications include W-CDMA/UMTS macro-cell base-station power amplifiers, multi-carrier TDMA and CDMA driver stages, PCN/PCS cellular infrastructure, and broadband wireless local-loop front-ends. Class-AB biasing is recommended for linear W-CDMA modulation while preserving efficiency.
When laying out a pallet with the MRF5S21150HR3, the input matching network must present the correct load impedance at 2.11-2.17 GHz; mismatch can degrade both gain and ruggedness into a 10:1 VSWR. Adequate base-plate cooling is mandatory because pulsed RF power exceeds the 33 W average figure by 6-9 dB.
This page synthesizes distributor pricing, drop-in NI-880 alternatives, and practical thermal/RF design notes not found in a single manufacturer datasheet - it is intended for base-station PA design engineers and procurement specialists.
Аналоги без доработки для MRF5S21150HR3 — тот же корпус, pin-to-pin совместимость. Компоненты в других корпусах, требующие переработки PCB, исключены.
Инструмент быстрого сравнения — выберите альтернативные компоненты для сравнения бок о бок:
MRF5S21150HSR3
✅ Прямая замена📋 Справочный аналог (нет в каталоге)
MRF5S21150R3
✅ Прямая замена📋 Справочный аналог (нет в каталоге)
MRF5S21150HR3 Максимальные параметры и электрические характеристики
| Manufacturer | NXP Semiconductors (formerly Freescale) |
| Тип транзистора | N-Channel Enhancement-Mode Lateral MOSFET (LDMOS) |
| Frequency Range | 2110 MHz to 2170 MHz |
| Test Frequency | 2.17 GHz |
| Typical Output Power (Avg.) | 33 W (CW / 2 x W-CDMA) |
| Power Gain | 12.5 dB at 2.17 GHz |
| Drain-Source Voltage (Vds) | 28 V (typical operating) |
| Напряжение пробоя сток-исток | 65 V (minimum) |
| Quiescent Drain Current | 1.3 A (typical) |
| Current Rating | 10 uA (gate leakage, indicative) |
| Корпус / Типоразмер | NI-880 (CASE 465B-03, STYLE 1), ceramic flange |
| Тип монтажа | Chassis / flange mount with screws |
| Number of Terminals | 2 (Gate, Drain) plus flange Source |
| Configuration | Single-ended, N-channel |
| Maximum Power Dissipation (Abs) | 380 W |
| Operating Class | Class AB (recommended for linearity) |
| Target Application | W-CDMA / TDMA / CDMA base-station PAs |
Конфигурация выводов MRF5S21150HR3
| Контакт 1 | Gate — RF input gate lead; bias +2.5 to +3.5 V for 1.3 A Iq at 28 V Vds |
| Контакт 2 | Drain — RF output drain lead; 28 V typical operating supply, 65 V min breakdown |
| Контакт Flange | Source — Mounting flange is the Source/ground path; bolts to heatsink |
MRF5S21150HR3 Область безопасной работы (DC)
Типичное применение
MRF5S21150HR3 подходит для 6 применениеs: W-CDMA Macro-Cell Base-Station PA, TDMA / CDMA Multi-Carrier Amplifier, Wireless Local Loop (WLL) Base Station, Aerospace & Defense RF Front End, Industrial Microwave Heating / RF Plasma Generator, Public-Safety / Private-LTE Repeater PA.
W-CDMA Macro-Cell Base-Station PA
The MRF5S21150HR3 is purpose-built for UMTS Band I downlink power amplifiers operating at 2110-2170 MHz, delivering 33 W average output with 12.5 dB gain from a 28 V rail per the manufacturer datasheet. Its class-AB bias support preserves EVM and ACPR margins under multicarrier W-CDMA load, and the high 65 V breakdown gives margin against in-rush and load-pull stress. Used in the final stage of three-way sectorised macro-cell radios, it sits behind a driver LDMOS and ahead of the antenna-combiner duplexer. Designers pair it with NXP's MMDS2025 or MLDoc IC drivers in commercial Doherty reference designs.
Рекомендуется
TDMA / CDMA Multi-Carrier Amplifier
Beyond W-CDMA, the MRF5S21150HR3 is rated for TDMA, CDMA, and multicarrier amplifier use per the NXP datasheet abstract, sustaining 33 W average into 6:1 or higher peak-to-average ratios. Its thermally-stable NI-880 ceramic flange keeps junction temperature low under continuous duty, which is critical for cellular base stations that never sleep. Paired with a quadrature combiner and circulator, the device supports PCS/cellular bands where linearity and gain flatness are mandatory. Apply 12.5 dB drive via the matching network for full-band flatness.
Рекомендуется
Wireless Local Loop (WLL) Base Station
The MRF5S21150HR3 suits WLL and fixed-wireless base-station power amplifiers operating in the 2110-2170 MHz licence-held spectrum, providing 33 W continuous CW with 12.5 dB gain from 28 V. Its robust 65 V breakdown withstands load transients on long feeder runs, and the NI-880 flange permits chassis mounting in outdoor cabinets with forced-air or cold-plate cooling. Designers benefit from NXP's reference design RF Toolkit which shortens time-to-prototype. Practical consideration: add a 50 ohm stripline drain harmonic filter to meet ETSI EN 301 908 spurious emissions.
Рекомендуется
Aerospace & Defense RF Front End
Aerospace RF front-ends and high-reliability telemetry transmitters use the MRF5S21150HR3 class-AB LDMOS for its ruggedness into 10:1 VSWR at 33 W average output. The ceramic NI-880 flange package is hermetic-grade and exhibits stable gain across the -40 to +85 C MIL-spec temperature range, suitable for ground-based or platform-mounted EW and counter-drone jammer applications. Bias stability and MTBF are strong points; consult NXP's screening flow for flight-grade variants.
Рекомендуется
Industrial Microwave Heating / RF Plasma Generator
At 2110-2170 MHz with 33 W average power, the MRF5S21150HR3 finds use as a final-stage driver in industrial microwave drying, plasma excitation, and RF curing systems. Its 65 V breakdown provides headroom for plasma load mismatch, and the bolted ceramic flange can be clamped to a water-cooled heat sink for 24/7 industrial operation. The 12.5 dB gain minimises upstream driver stages, simplifying cabinet wiring and reducing bill-of-materials. A 6 dB stripline pad stabilises the input VSWR.
Рекомендуется
Public-Safety / Private-LTE Repeater PA
Private LTE and public-safety Band-I repeaters in the 2110-2170 MHz downlink leverage the MRF5S21150HR3's 33 W average output to extend indoor coverage from donor antenna to distributed antennas. Its 12.5 dB gain simplifies the chain in space-constrained indoor enclosures, and its 28 V bias integrates with standard PoE+ or 48 V telecom rails via a buck converter. Effective heat-sinking in sealed IP54 enclosures requires a copper spreader plus thermal interface material on the NI-880 flange.
Рекомендуется
Сводка рекомендуемых товаров
Справочные инженерные данные для MRF5S21150HR3 — сравнение, рекомендации по проектированию и информация о соответствии.
Руководство по выбору
Сравнение с аналогами
| Параметр | Этот товар | MRF5S21150HSR3 | MRF5S21150R3 |
|---|---|---|---|
| Brand | NXP Semiconductors | NXP Semiconductors (same brand) | NXP Semiconductors (same brand) |
| Package | NI-880 (CASE 465B-03, STYLE 1) | NI-880 (CASE 465B-03, STYLE 2) - same family | NI-880 (CASE 465B-03, STYLE 1) - same |
| Frequency Range | 2110-2170 MHz | 2110-2170 MHz (identical) | 2110-2170 MHz (identical) |
| Output Power (Avg.) | 33 W | 33 W (identical) | 33 W (identical) |
| Power Gain | 12.5 dB at 2.17 GHz | 12.5 dB at 2.17 GHz (identical) | 12.5 dB at 2.17 GHz (identical) |
| Drain-Source Voltage (Vds) | 28 V typical | 28 V (identical) | 28 V (identical) |
| Drain-Source Breakdown | 65 V minimum | 65 V (identical) | 65 V (identical) |
| Quiescent Drain Current | 1.3 A typical | 1.3 A (identical) | 1.3 A (identical) |
| Maximum Dissipation | 380 W | 380 W (identical) | 380 W (identical) |
Ключевые отличия
- Pin-to-pin drop-in for the mirror-image HSR3 variant (против MRF5S21150HSR3)
- Same datasheet family as MRF5S21150R3 for sourcing flexibility (против MRF5S21150R3)
Заметки по проектированию
Estimated: at 33 W RF output and 7 W dissipated per average W-CDMA frame, the MRF5S21150HR3 requires a cold-plate or heatsink rated for at least 80 W continuous. Apply a high-quality thermal interface material (3 W/mK or better) on the NI-880 flange and torque the mounting screws to the NXP-recommended 4 in-lb to avoid ceramic cracking. Base-plate flatness should be under 0.05 mm to maintain void-free thermal contact across the 380 W absolute dissipation envelope.
The input and output matching networks should be built on 0.508 mm or 0.635 mm Rogers RO4350B substrate (er=3.48) for consistent 2.17 GHz tuning. Use 50 ohm stripline launch transitions and place 0402 decoupling capacitors within 5 mm of the gate and drain leads. Keep the gate lead length below 3 mm to preserve 12.5 dB gain and minimise feedback. Solder the flange with the recommended NXP clamping torque and ground both source fingers via multiple vias to the backplane.
Do not operate the MRF5S21150HR3 into an open load or high-VSWR without a circulator; the LDMOS can suffer parametric drift if gate leakage exceeds 10 uA. Always sequence gate bias BEFORE drain voltage and remove gate bias AFTER drain voltage collapses, otherwise the device can enter thermal runaway. Avoid running the drain at 28 V continuously above the 1.3 A Iq setpoint without RF drive - efficiency plummets and the junction overheats within seconds.
Stabilise the MRF5S21150HR3 with a 4:1 stripline drain-to-gate feedback stub or a small R-C snubber (10 ohm + 100 pF in series) from gate to ground if oscillation is observed during tune-up. Use a spectrum analyser during bias ramp-up - any kHz-range oscillation is a sign of insufficient source-lead inductance or a faulty gate-bias path. Keep the harmonic-filter stub lengths to lambda/4 at 2.17 GHz for -45 dBc second-harmonic rejection.
Информация о соответствии
Compliance data not explicitly stated in the verified NXP datasheet excerpt; consult the official NXP compliance certificate or IPC-1752 material declaration via your franchised distributor. The part is a power RF transistor intended for telecom infrastructure - automotive (AEC-Q100) qualification is not applicable.
