MRF6S23100HSR3 - 20W RF Power LDMOS MOSFET 2.3-2.4GHz | NXP
Артикул: MRF6S23100HSR3 ✓ Активен| Кол-во | Цена за ед. | Итого |
|---|---|---|
| 1 | $38.5 | $38,50 |
| 10 | $35.2 | $352,00 |
| 100 | $31.8 | $3.180,00 |
| 500 | $28.5 | $14.250,00 |
| 1.000 | $25.75 | $25.750,00 |
MRF6S23100HSR3 Обзор
A Radio-Frequency Laterally Diffused Metal-Oxide Semiconductor (RF LDMOS) transistor is a power MOSFET variant engineered for high-frequency, high-power amplification. RF LDMOS devices sit in the broader transistor taxonomy between small-signal MOSFETs and Si BJT/GaAs HEMT power devices; they are widely used in cellular base-station power amplifiers because they offer high gain, reasonable efficiency, and excellent linearity at RF frequencies up to ~3.8 GHz, at cost-per-watt levels far below GaN alternatives.
Key specifications for the MRF6S23100HSR3 include: frequency range 2300–2400 MHz, Pout of 20 W average under 2 x W-CDMA, power gain of 15.4 dB at the operating point, drain supply of 28 V, and the NI-780S package. The lateral N-channel structure on the NI-780S ceramic carrier provides low thermal resistance and rugged behavior into mismatched loads, which is critical for telecom infrastructure amplifiers that must survive antenna feedline faults.
The device is built on NXP's high-volume sixth-generation HV6 LDMOS process, which is optimized for linear amplification in Doherty and push-pull final-stage PA modules. Its integrated ESD protection and high breakdown voltage (drain-source rating to 68 V) make it tolerant of over-voltage transients on the RF chain, simplifying the protection circuitry in the surrounding PA sub-system.
Typical applications include 2.3–2.4 GHz WiMAX base-station power amplifiers, W-CDMA and LTE small-cell final stages, industrial RF heating drivers, and avionics/data-link transmitters. The device is frequently used in Doherty PA architectures where its high gain and linearity allow reduction of driver-stage complexity.
When designing with this part, ensure the source leads are well-grounded with multiple vias under the package thermal area. The NI-780S package requires a copper flange-mounting scheme or PCB-cavity mount with a matched lead pattern; using the manufacturer evaluation board reference design is recommended to guarantee the rated gain and stability across production builds.
This page synthesizes distributor pricing, parametric drop-in alternatives, and practical design notes not found in the manufacturer datasheet alone.
Аналоги без доработки для MRF6S23100HSR3 — тот же корпус, pin-to-pin совместимость. Компоненты в других корпусах, требующие переработки PCB, исключены.
Инструмент быстрого сравнения — выберите альтернативные компоненты для сравнения бок о бок:
MRF6S23100HR3
✅ Прямая замена📋 Справочный аналог (нет в каталоге)
MRF6S23100HSR5
✅ Прямая замена📋 Справочный аналог (нет в каталоге)
MRF6S21140HSR3
✅ Прямая замена📋 Справочный аналог (нет в каталоге)
MRF6S24140HSR3
✅ Прямая замена📋 Справочный аналог (нет в каталоге)
MRF8S26120HSR3
✅ Прямая замена📋 Справочный аналог (нет в каталоге)
MRF6S23100HSR3 Максимальные параметры и электрические характеристики
| Manufacturer | NXP Semiconductors |
| Part Number | MRF6S23100HSR3 |
| Тип транзистора | LDMOS, N-Channel, Lateral |
| Frequency Range | 2300 MHz to 2400 MHz |
| Output Power (P1dB / Avg.) | 20 W (avg., 2 x W-CDMA, 28 V) |
| Power Gain | 15.4 dB |
| Drain Supply Voltage | 28 V (typ.) |
| Напряжение пробоя сток-исток | 68 V |
| Test Current | 1 A |
| Configuration | Single, Common Source |
| Корпус | NI-780S (ceramic flangeless) |
| Тип монтажа | Surface Mount / Flange-mount cavity |
| Operating Mode | Class AB / Doherty linear |
| Application Band | 2.3-2.4 GHz WiMAX / W-CDMA |
| Maximum Power Dissipation | 330 W (absolute) |
| Статус RoHS | Compliant |
| Lead Free | Yes |
Конфигурация выводов MRF6S23100HSR3
| Контакт 1 | GATE — RF input gate lead (bias and RF drive) |
| Контакт 2 | DRAIN — RF output / drain DC supply lead |
| Контакт 3 | SOURCE — Source / ceramic flange ground (must be soldered to PCB ground with thermal vias) |
Область безопасной работы - DC
Типичное применение
MRF6S23100HSR3 подходит для 6 применениеs: 2.3-2.4 GHz WiMAX Base-Station Power Amplifier, W-CDMA Small-Cell Final Stage, LTE Band 38 / Band 40 Small-Cell PA, Industrial RF Heating / Drying Driver, Aerospace / Avionics Data-Link Transmitter, Doherty Final-Stage Power Amplifier Module.
2.3-2.4 GHz WiMAX Base-Station Power Amplifier
The MRF6S23100HSR3 is purpose-built for 2.3–2.4 GHz WiMAX and W-CDMA final-stage base-station PAs. Its 20 W average power at 2 x W-CDMA, combined with 15.4 dB gain and high linearity, enables a single-transistor final stage that drives an antenna or feeds a Doherty combining network. The 28 V drain supply matches standard telecom PA rails, simplifying power supply design. Placed in a 50-ohm push-pull or single-ended PA module with manufacturer-recommended matching networks, the device achieves the rated gain and efficiency across the 2300–2400 MHz band.
Рекомендуется
W-CDMA Small-Cell Final Stage
Small-cell W-CDMA base stations in the 2.3–2.4 GHz allocation benefit from the MRF6S23100HSR3's compact NI-780S flangeless ceramic package and 20 W power class. The 15.4 dB gain reduces driver-stage complexity, allowing a two-stage PA chain (driver + final) instead of three. Inherent linearity at 28 V operation meets 3GPP ACLR and EVM requirements without heavy digital pre-distortion. The NI-780S package drops into standard NXP reference-design footprints used across the HV6 LDMOS family, accelerating PCB layout for small-cell OEMs.
Рекомендуется
LTE Band 38 / Band 40 Small-Cell PA
LTE Band 38 (2570–2620 MHz) and Band 40 (2300–2400 MHz) small-cell infrastructure uses power amplifiers in the same 2.3–2.6 GHz range that the MRF6S23100HSR3 family targets. While this specific part is optimized for 2300–2400 MHz (Band 40), designers can pair it with NXP's MRF8S26120HSR3 for Band 38, sharing the NI-780S footprint and evaluation board design. The 20 W average power level is well-matched to pico-cell and micro-cell deployments in dense urban environments.
Рекомендуется
Industrial RF Heating / Drying Driver
Industrial RF heating systems operating at 2.45 GHz or nearby ISM allocations can leverage the MRF6S23100HSR3 as a final-stage CW driver, taking advantage of the 20 W power rating and 15.4 dB gain in a robust ceramic package. The 68 V breakdown voltage tolerance and rugged load-mismatch behavior help survive the high-VSWR conditions typical of industrial RF applicators. CW dissipation must be thermally managed, requiring copper coin and thermal vias under the NI-780S flange.
Рекомендуется
Aerospace / Avionics Data-Link Transmitter
Aerospace telemetry and avionics data-link systems that operate in the 2.3–2.4 GHz band can use the MRF6S23100HSR3 as a final-stage transmitter amplifier, where its 20 W power and high linearity support both AM and FM modulation schemes. The ceramic NI-780S package is qualified to industrial-environment thermal and vibration profiles common in avionics bays. Designers should add output harmonic filtering and verify DO-160 compliance for the specific airframe installation.
Рекомендуется
Doherty Final-Stage Power Amplifier Module
Doherty amplifier architectures in 2.3–2.4 GHz base-stations use a peaking amplifier plus a main amplifier, both commonly built from the same LDMOS family. The MRF6S23100HSR3's 15.4 dB gain and 20 W linear power rating suit either the main or peaking role in a symmetrical Doherty configuration. Sharing the NI-780S package with adjacent-band NXP HV6 LDMOS parts lets module designers reuse PCB layouts, bias networks, and matching structures when porting designs across frequency bands.
Рекомендуется
Сводка рекомендуемых товаров
Справочные инженерные данные для MRF6S23100HSR3 — сравнение, рекомендации по проектированию и информация о соответствии.
Руководство по выбору
Сравнение с аналогами
| Параметр | Этот товар | MRF6S23100HR3 | MRF6S23100HSR5 | MRF6S21140HSR3 | MRF6S24140HSR3 | MRF8S26120HSR3 |
|---|---|---|---|---|---|---|
| Brand | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors |
| Package | NI-780S | NI-780 (flanged) | NI-780S - same | NI-780S - same | NI-780S - same | NI-780S - same |
| Frequency Range | 2300-2400 MHz | 2300-2400 MHz | 2300-2400 MHz | 2110-2170 MHz | 2400-2500 MHz | 2500-2700 MHz |
| Output Power | 20 W avg. | 20 W avg. | 20 W avg. | 140 W avg. | 140 W avg. | 120 W avg. |
| Drain Supply | 28 V | 28 V | 28 V | 28 V | 28 V | 28 V |
| Breakdown Voltage | 68 V | 68 V | 68 V | 68 V | 68 V | 68 V |
| Silicon Generation | HV6 LDMOS (6th gen) | HV6 LDMOS (6th gen) | HV6 LDMOS (6th gen) | HV6 LDMOS (6th gen) | HV6 LDMOS (6th gen) | HV8 LDMOS (8th gen) |
Ключевые отличия
- Same NI-780S package as adjacent-band siblings for layout reuse (против MRF8S26120HSR3)
- Same silicon die across S and H package suffixes (против MRF6S23100HR3)
- Higher linear power per watt than 5th-gen predecessors (против MRF5S23100 family (5th gen))
Заметки по проектированию
At 20 W average RF output under 2 x W-CDMA drive, the MRF6S23100HSR3 dissipates roughly 30-40 W as heat. The NI-780S ceramic package requires a copper coin or copper flange under the source pad, with at least 9-12 thermal vias connecting to a ground plane heat sink. Without this thermal stack the junction temperature will exceed the 200C absolute maximum under continuous CW operation, causing thermal shutdown or catastrophic failure.
Use the NXP evaluation-board reference layout as the starting point. The input and output matching networks must use 50-ohm microstrip lines sized for the 2.3-2.4 GHz band; deviations greater than 5% in line width or dielectric thickness will shift the gain peak out of band. Place bias feed inductors and bypass capacitors (100 pF + 10 nF + 10 uF) within 3 mm of the gate and drain leads to suppress low-frequency oscillation.
Estimated: At 28 V drain supply and 1 A quiescent current, the gate bias voltage must be carefully set around 2.5-3.0 V to achieve Class-AB bias. Over-biasing toward Class-A increases dissipation without proportional linearity gain; under-biasing causes gain compression and spectral regrowth that fails ACLR/EVM. Always measure quiescent current before applying RF drive, and use active bias circuits with temperature compensation for production designs.
The source lead (ceramic flange) is the only ground reference for the device. Ensure the PCB cutout around the NI-780S package maintains a continuous ground plane on layer 2, stitched with ground vias every 2 mm around the package periphery. A broken ground reference introduces parasitic inductance that destabilizes the PA and can cause low-frequency oscillation below 100 MHz, often invisible on RF-only test equipment.
Информация о соответствии
RoHS and lead-free status confirmed per NXP product documentation; halogen-free status not explicitly stated in verified data; not AEC-Q100 qualified (telecom-grade part, not automotive).
