MRF6VP21KHR5 - 1000W VHV6 RF MOSFET, 235MHz, NI-1230 | NXP
Артикул: MRF6VP21KHR5 ✓ Активен| Кол-во | Цена за ед. | Итого |
|---|---|---|
| 1 | $320 | $320,00 |
| 10 | $295 | $2.950,00 |
| 50 | $270 | $13.500,00 |
| 100 | $245 | $24.500,00 |
| 500 | $220 | $110.000,00 |
MRF6VP21KHR5 Обзор
An RF power MOSFET is a specialized metal-oxide-semiconductor field-effect transistor optimized to deliver large amounts of radio-frequency power with high gain and efficiency. Within the broader taxonomy, this device sits at: RF MOSFET -> RF power transistor -> discrete semiconductor -> power management component. LDMOS technology, in particular, dominates base-station and pulsed-power amplifier designs above 100 MHz because it offers a superior gain-bandwidth product and high breakdown voltage when compared to earlier bipolar RF transistors.
Key features of the MRF6VP21KHR5 include a drain-source breakdown of 110 V, typical pulsed output power of 1000 W at 235 MHz, 24 dB nominal gain in a 50 V common-source test circuit, and an unmatched input/output that allows the designer to optimize matching networks for the specific frequency band. The NI-1230 ceramic package provides a low-thermal-resistance path to the heatsink, supporting the high peak power dissipation typical of pulsed RF service. The device is specified for operation up to a maximum junction temperature consistent with 225 °C packaging ratings, with peak reflow temperature (260 °C) tolerance to 40 s.
Typical applications include pulsed wideband amplifiers in the 1–235 MHz range, particle accelerator drivers, MRI RF power stages, plasma-generation RF generators, and high-power industrial/scientific RF sources. Because the device is unmatched, the designer can tailor the input and output matching networks to the exact operating frequency and required bandwidth of the system.
When designing with the MRF6VP21KHR5, ensure the heatsink and mounting torque follow NXP application notes for the NI-1230 flange - improper mounting is the leading cause of premature thermal failure. Operate strictly below the maximum drain voltage and within the safe operating area (SOA) to avoid secondary breakdown during pulse droop.
Аналоги без доработки для MRF6VP21KHR5 — тот же корпус, pin-to-pin совместимость. Компоненты в других корпусах, требующие переработки PCB, исключены.
Варианты в этой серии
Модели той же серии, совместимые без доработки с MRF6VP21KHR5 (тот же форм-фактор и посадочное место) — отличается по Mounting Type, Package / Case, Peak Reflow Temperature, Technology, Transistor Type.
Инструмент быстрого сравнения — выберите альтернативные компоненты для сравнения бок о бок:
MRF6VP21KHR6
✅ Прямая замена📋 Справочный аналог (нет в каталоге)
MRF6VP21KGN
✅ Прямая замена📋 Справочный аналог (нет в каталоге)
MRF6VP41KHR5
✅ Прямая замена✓ В наличии
$229.5 / шт.
Открыть даташит →MRF6VP21KHS
✅ Прямая замена📋 Справочный аналог (нет в каталоге)
MRF6VP21KHR5 Максимальные параметры и электрические характеристики
| Тип транзистора | N-Channel Enhancement-Mode RF MOSFET (LDMOS) |
| Technology | Laterally Diffused MOS (LDMOS) - VHV6 family |
| Drain-Source Voltage (Vdss) Max | 110 V |
| Pulsed Output Power (Pout) at 235 MHz | 1000 W (typical, pulsed) |
| Operating Frequency Range | Up to 235 MHz |
| Power Gain (Gps) at 235 MHz | 24 dB (nominal, common-source) |
| Test Conditions | 50 V supply, pulsed RF service |
| Input/Output Matching | Unmatched (discrete matching network required) |
| Корпус / Типоразмер | NI-1230-4H (5-pin ceramic flange) |
| Тип монтажа | Flange mount with screws to heatsink |
| Maximum Operating Temperature | 225 °C (package rating) |
| Peak Reflow Temperature | 260 °C (max 40 s) |
| Operating Mode | Enhancement mode |
| Channel Polarity | N-Channel |
Конфигурация выводов MRF6VP21KHR5
| Контакт 1 | Drain — RF drain output (50 V nominal pulsed supply) |
| Контакт 2 | Gate — RF gate input (DC bias + RF drive) |
| Контакт 3 | Source — Source (grounded to flange) |
| Контакт 4 | NC — Not connected (mechanical pin) |
| Контакт 5 | NC — Not connected (mechanical pin) |
Область безопасной работы - MRF6VP21KHR5 (pulsed service)
Типичное применение
MRF6VP21KHR5 подходит для 6 применениеs: Pulsed Wideband RF Power Amplifier (1–235 MHz), MRI RF Power Amplifier Stage, Particle Accelerator RF Driver, Plasma Generation RF Generator, Industrial / Scientific RF Heating, High-Power Broadcast / Communication PA (VHF).
Pulsed Wideband RF Power Amplifier (1–235 MHz)
The MRF6VP21KHR5 is purpose-built for pulsed wideband RF power amplifiers across 1–235 MHz. Its 110 V Vdss and 50 V supply operation on NXP's VHV6 LDMOS process yield 1000 W pulsed output with 24 dB gain at 235 MHz. The unmatched input/output lets designers synthesize LC matching networks for either narrow-band (communications) or octave-bandwidth (EW/jammer) coverage. Because the device is rated for pulsed service, average dissipation stays low while peak power is high - the ideal profile for radar-style duty cycles.
Рекомендуется
MRI RF Power Amplifier Stage
In MRI scanners, the RF power amplifier drives the transmit coil at the Larmor frequency, where precise amplitude control and low phase noise are critical. The MRF6VP21KHR5's 1000 W pulsed capability and 24 dB gain at the typical 64–128 MHz MRI bands make it a strong candidate for high-field transmit chains. Its NI-1230 ceramic flange mounts directly to the PA compartment heatsink, simplifying integration in medical imaging equipment that must also meet IEC 60601 safety margins.
Рекомендуется
Particle Accelerator RF Driver
Particle accelerators require high peak RF power at UHF/VHF to drive cavity structures. The MRF6VP21KHR5's 110 V VHV6 breakdown and 1000 W pulsed output suit the cavity-driver role in scientific instruments. The unmatched input/output allows the engineer to tune the matching network for the accelerator cavity's specific resonant frequency and Q, while the ceramic NI-1230 flange provides the rugged mechanical mounting needed for vacuum-adjacent service.
Рекомендуется
Plasma Generation RF Generator
Industrial plasma generators for semiconductor etch, thin-film deposition, and surface treatment require sustained RF power at 13.56 MHz and related ISM bands. The MRF6VP21KHR5 delivers 1000 W pulsed capability that can be operated CW at derated levels for plasma ignition and steady-state generation. The LDMOS technology offers high gain and efficiency at these frequencies, while the unmatched design lets the integrator match to plasma-load impedance variations.
Рекомендуется
Industrial / Scientific RF Heating
Industrial RF heating systems for drying, welding, and curing operate in the 1–100 MHz range at high power levels. The MRF6VP21KHR5's combination of 110 V Vdss, 1000 W pulsed capability, and unmatched input makes it a flexible building block for these installations. The NI-1230 ceramic flange simplifies service and replacement in industrial environments where heatsink-mounted modules are common.
Рекомендуется
High-Power Broadcast / Communication PA (VHF)
Although primarily pulsed-rated, the MRF6VP21KHR5 can be used as a CW-derated final stage in VHF communication transmitters. Its 24 dB gain at 235 MHz substantially reduces driver-stage complexity, and the unmatched input/output allows broadband matching across the VHF broadcast band. The NXP VHV6 LDMOS process is well-characterized for spectral purity, important for regulatory compliance in licensed VHF services.
Рекомендуется
Сводка рекомендуемых товаров
Справочные инженерные данные для MRF6VP21KHR5 — сравнение, рекомендации по проектированию и информация о соответствии.
Руководство по выбору
Сравнение с аналогами
| Параметр | Этот товар | MRF6VP21KHR6 | MRF6VP21KGN | MRF6VP41KHR5 | MRF6VP21KHS |
|---|---|---|---|---|---|
| Brand | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors |
| Package | NI-1230-4H (5-pin ceramic flange) | NI-1230-4H - same | NI-1230-4H - same | NI-1230-4H - same | NI-1230-4H - same |
| Vdss Max | 110 V | 110 V | 110 V | 110 V | 110 V |
| Frequency Range (Max) | 235 MHz | 512 MHz (higher) | 230 MHz | 450 MHz (higher) | 235 MHz |
| Pulsed Output Power | 1000 W | ~1000 W | 1000 W | 1000 W | ~900 W (lower) |
| Supply Voltage | 50 V | 50 V | 50 V | 50 V | 50 V |
| Input/Output Matching | Unmatched | Unmatched | Unmatched | Unmatched | Unmatched |
Ключевые отличия
- VHV6 110 V LDMOS process with 1000 W pulsed capability at 235 MHz (против MRF6VP21KHR6)
- Pin-to-pin NI-1230 drop-in for higher-frequency migration paths (против MRF6VP21KGN)
- VHV6 family consistency simplifies multi-band amplifier platforms (против MRF6VP41KHR5)
Заметки по проектированию
Estimated: At a 100 µs pulse at 1% duty cycle into a 50 V supply delivering 1000 W peak pulsed output, average dissipation is roughly Pdiss_avg ≈ (Vdd - Vds_sat) × I_dc × duty + Pout × (1/η - 1) × duty. With Vdd=50 V, Vds_sat≈5 V, I_dc≈30 A pulsed, duty=1%, and η≈55%, average dissipation ≈ 4.5 W, easily handled by the NI-1230 flange on a modest heatsink. For longer pulses or higher duty cycles, recompute carefully and provide a thermal switch on the heatsink.
The unmatched input/output of the MRF6VP21KHR5 places the burden of matching network design on the engineer. Use microstrip or stripline transmission lines on low-loss PCB substrate (Rogers RO4350B or equivalent) with discrete LC components sized for the target frequency. Keep the gate matching network short to minimize loop inductance, which directly affects stability at VHF. Source leads must be bonded to the NI-1230 flange with multiple low-inductance straps to prevent common-mode instability.
Do not exceed the 110 V Vdss rating under any transient condition, including VSWR-induced overshoot at the drain. Add a drain transient suppressor (TVS or RC snubber) sized to clamp below 100 V. Ensure the gate bias sequence is correct: gate voltage must be applied before (or simultaneously with) the drain supply, never after - a sequence reversal can cause uncontrolled current draw and device destruction. Finally, never operate the device without the source flange solidly bonded to chassis ground.
Use a heatsink compound rated for high-frequency vibration and thermal cycling (e.g., Bergquist Gap Pad or Shin-Etsu silicone compound). Mounting torque on the NI-1230 flange screws should follow NXP's mechanical drawing specification - typically 1.0–1.5 N·m per screw. Insufficient torque causes thermal runaway; excessive torque can crack the ceramic. Provide a thermal switch or thermistor on the heatsink for overtemperature shutdown protection.
Информация о соответствии
Compliance flags for MRF6VP21KHR5 not explicitly stated in the verified web data; RoHS/REACH/lead-free status should be confirmed with the NXP product page or franchised distributor. AEC-Q100 is not applicable to discrete RF power MOSFETs.
