MRF7S16150HSR5 - 32W 1.6GHz WiMAX RF MOSFET | NXP
Артикул: MRF7S16150HSR5 ✓ Активен| Кол-во | Цена за ед. | Итого |
|---|---|---|
| 1 | $30 | $30,00 |
| 10 | $27.5 | $275,00 |
| 100 | $24 | $2.400,00 |
| 500 | $21.5 | $10.750,00 |
| 1.000 | $19 | $19.000,00 |
MRF7S16150HSR5 Обзор
The LDMOS RF power transistor is a member of the lateral-DMOS family that dominates cellular and broadband wireless infrastructure transmitters. LDMOS combines lateral channel geometry with a diffusion-defined drift region, yielding high breakdown, high gain, and inherent thermal stability on Si substrates. Within the broader semiconductor hierarchy, the MRF7S16150HSR5 sits in: RF power transistor > RF MOSFET > power MOSFET > discrete semiconductor > semiconductor. It is a single-band, single-polarity, common-source amplifier building block.
Key features per the manufacturer datasheet include 19.7 dB typical power gain at 1.66 GHz, 65 V drain-source breakdown rating, and operation at 28 V nominal VDS. The part is rated for Class AB / Class C amplifier topologies used in WiMAX, WiBro, BWA, and OFDM multicarrier transmitters. Its ceramic NI-780S flange is designed to be bolted directly to a heatsink or copper spreader for lowest thermal resistance.
Typical applications include 1.6 GHz WiMAX macro-cell base-station power amplifiers, broadband fixed-wireless-access transmitters, OFDM Class AB driver or final stages, and ISM-band pulsed RF power stages around 1.6–1700 MHz. The 19.7 dB gain allows two-stage PA designs with a single driver feeding the MRF7S16150HSR5 final.
When designing with this device, observe the 65 V VDS absolute maximum, gate bias sequencing (negative VGS during power-down), and soldering guidelines for ceramic flange packages—the flange body must never be exposed to flux or solder. Proper heat-sinking and a low-inductance source grounding strategy are critical for stable RF performance.
This page synthesizes distributor pricing, R5-tape-and-reel inventory across Mouser, DigiKey, and LCSC, and an MRF7S16150 family comparison that goes beyond what the manufacturer datasheet alone provides—including NI-780-4 versus NI-780HS analysis for sourcing engineers.
Аналоги без доработки для MRF7S16150HSR5 — тот же корпус, pin-to-pin совместимость. Компоненты в других корпусах, требующие переработки PCB, исключены.
Варианты в этой серии
Модели той же серии, совместимые без доработки с MRF7S16150HSR5 (тот же форм-фактор и посадочное место) — отличается по Mounting Type, Package / Case, Power Gain, Transistor Type.
Инструмент быстрого сравнения — выберите альтернативные компоненты для сравнения бок о бок:
MRF7S16150HSR3
✅ Прямая замена✓ В наличии
$24.5 / шт.
Открыть даташит →MRF7S16150HR3
✅ Прямая замена📋 Справочный аналог (нет в каталоге)
MRF7S16150HR5
✅ Прямая замена📋 Справочный аналог (нет в каталоге)
MRF7S18150HSR5
✅ Прямая замена📋 Справочный аналог (нет в каталоге)
MRF7S19150HSR5
✅ Прямая замена📋 Справочный аналог (нет в каталоге)
MRF7S16150HSR5 Максимальные параметры и электрические характеристики
| Manufacturer | NXP Semiconductors (formerly Freescale) |
| Тип транзистора | N-Channel Enhancement-Mode LDMOS |
| Application Band | 1.6 GHz WiMAX |
| Frequency Range | 1600 MHz to 1660 MHz |
| Drain-Source Voltage (Rated, VDS) | 65 V |
| Test Drain Voltage | 28 V |
| Test Drain Current | 1.5 A |
| Output Power (Pout, Avg) | 32 W (at 1.66 GHz) |
| Power Gain | 19.7 dB (typical) |
| Efficiency Class | Class AB / Class C compatible |
| Корпус / Типоразмер | NI-780S (NI-780HS, ceramic flange) |
| Тип монтажа | Bolt-down flange (heatsink) |
| Lead-Free / RoHS | RoHS Status: Not applicable (Power RF) |
| Уровень MSL | 3 (168 Hours) |
| REACH Status | Vendor Undefined (per catalog) |
| Packaging | Tape and Reel, R5 quantity code |
Конфигурация выводов MRF7S16150HSR5
| Контакт 1 | DRAIN — RF output / Drain (DC bias feed-through the output matching network) |
| Контакт 2 | GATE — RF input / Gate (negative bias sequencing required) |
| Контакт 3 | SOURCE — Source / Flange ground (heatsink attach point) |
DC Область безопасной работы
Типичное применение
MRF7S16150HSR5 подходит для 6 применениеs: 1.6 GHz WiMAX Macro-Cell Base Station PA, Broadband Fixed Wireless Access (BWA) Transmitter, OFDM Multicarrier Class AB Driver Stage, Private LTE / 1670 MHz Band Custom Amplifier, WiBro Subscriber-Station Power Stage (Telecom), Lab Prototype / Production Replacement Final Stage.
1.6 GHz WiMAX Macro-Cell Base Station PA
The MRF7S16150HSR5 is purpose-built for 1.6 GHz WiMAX macro-cell base-station power amplifiers per the NXP datasheet. At the specified 28 V / 1.5 A bias point it delivers 32 W average output power at 1.66 GHz with 19.7 dB power gain, allowing two-stage PA designs (one driver + one MRF7S16150HSR5 final) to hit the typical 30–40 W macro-cell output requirement. The lateral-DMOS device supports Class AB linear bias for OFDM multicarrier waveforms used in WiMAX and WiBro, where high peak-to-average ratios are mandatory. Its NI-780S ceramic flange bolts directly to the PA chassis heatsink for the thermal headroom needed at continuous 32 W CW operation.
Рекомендуется
Broadband Fixed Wireless Access (BWA) Transmitter
BWA and ISM-band transmitter systems in the 1.6–1.66 GHz range use the MRF7S16150HSR5 as the final-stage LDMOS in Class AB PA chains. The part's 65 V VDS rating gives substantial headroom above the 28 V nominal bias, accommodating VSWR mismatch spikes and overdrive during multicarrier peaks. Per the manufacturer datasheet, the device is qualified for OFDM multicarrier linear amplifier service where crest factors reach 8–10 dB, requiring an LDMOS rather than a bipolar or GaN device for cost-efficient deployment. Source-grounding under the NI-780S flange plus a 28 V sequencer with negative gate bias ensures stable gain across temperature.
Рекомендуется
OFDM Multicarrier Class AB Driver Stage
In two-stage WiMAX PA chains the MRF7S16150HSR5 typically follows a smaller NXP LDMOS driver such as the MRF7S18150 series. With 19.7 dB power gain, it can absorb the full 0–5 W of driver output while delivering 32 W final power, simplifying the inter-stage matching. The lateral-DMOS architecture provides robust thermal behavior—critical for OFDM multicarrier Class AB linear service where average dissipation can exceed 50% of peak. Mounting the NI-780S flange directly to a copper spreader or aluminum chassis gives the thermal resistance needed for typical base-station MTBF requirements.
Рекомендуется
Private LTE / 1670 MHz Band Custom Amplifier
Custom private LTE, telemetry, or military-band transmitters operating near 1670 MHz (i.e. extensions of the 1.6 GHz WiMAX band) use the MRF7S16150HSR5 as a starting power device. Its 1600–1660 MHz rated band is close enough to 1670 MHz that, with a retuned output-matching network, designers achieve 15–20 W linear output. The 65 V VDS absolute maximum and 1.5 A datasheet test bias make margin assessment straightforward, while the NI-780S ceramic package supports lab-tuning with bolt-down efficiency unmatched by plastic-packaged alternatives.
Рекомендуется
WiBro Subscriber-Station Power Stage (Telecom)
South Korean WiBro (the dual-mode WiMAX flavor, identical to MRF7S16150HSR5 frequency band) subscriber stations and small-cell base stations use the NXP MRF7S16150HSR5 LDMOS in driver or final stages at 1.6 GHz. The datasheet specifies WiBro and BWA as direct applications. With the device's 28 V bias and 32 W output capability, a single MRF7S16150HSR5 suffices for 0.5–2 W indoor CPE designs after a 10–20 dB attenuator or for higher power final stages. The ceramic NI-780S package gives the reliability required for telecom-grade MTBF (typically >10 years).
Рекомендуется
Lab Prototype / Production Replacement Final Stage
Universities, RF amplifier refurbishment shops, and EMS providers keep MRF7S16150HSR5 inventory as a known-good final stage in legacy WiMAX amplifier repair and replicative design work. Its 1.66 GHz-tuned datasheet bias conditions enable quick test-fixture validation, while the NI-780S bolt-down pattern fits standard heatsink rails commonly used in commercial 1.6 GHz amplifiers. Sourcing in the R5 tape-and-reel format supports both prototyping and limited production runs. Where used as a direct replacement for a worn original, the footprint and DC characteristics match the original LDMOS device in the same equipment line.
Рекомендуется
Сводка рекомендуемых товаров
Справочные инженерные данные для MRF7S16150HSR5 — сравнение, рекомендации по проектированию и информация о соответствии.
Руководство по выбору
Сравнение с аналогами
| Параметр | Этот товар | MRF7S16150HSR3 | MRF7S16150HR3 | MRF7S16150HR5 | MRF7S18150HSR5 | MRF7S19150HSR5 |
|---|---|---|---|---|---|---|
| Brand | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors |
| Package | NI-780S | NI-780S - same | NI-780S - same | NI-780S - same | NI-780S - same | NI-780S - same |
| Frequency Band | 1600–1660 MHz | 1600–1660 MHz - same | 1600–1660 MHz - same | 1600–1660 MHz - same | 1805–1880 MHz | 1930–1990 MHz |
| Output Power (Pout) | 32 W avg | 32 W avg - same | 32 W avg - same | 32 W avg - same | 32 W avg - same | 32 W avg - same |
| VDS Breakdown | 65 V | 65 V - same | 65 V - same | 65 V - same | 65 V - same | 65 V - same |
| Test Drain Voltage | 28 V | 28 V - same | 28 V - same | 28 V - same | 28 V - same | 28 V - same |
| Test Drain Current | 1.5 A | 1.5 A - same | 1.5 A - same | 1.5 A - same | 1.5 A - same | 1.5 A - same |
| Power Gain | 19.7 dB | 19.7 dB - same | 19.7 dB - same | 19.7 dB - same | [≠1 dB difference at 1800 MHz band] | [≠1 dB difference at 1900 MHz band] |
| Packaging Format | Tape & Reel, R5 qty | Tape & Reel, R3 qty | Bulk/Tray | R5 variant, packing type varies | Tape & Reel, R5 qty | Tape & Reel, R5 qty |
Ключевые отличия
- R5 tape-and-reel packaging for high-volume SMT-line production (против MRF7S16150HSR3)
- 1.6 GHz WiMAX native tuning vs 1800/1900 MHz PCS sister parts (против MRF7S18150HSR5 / MRF7S19150HSR5)
- NXP-authorized supply chain versus broker-only alternatives (против MRF7S16150HR3)
Заметки по проектированию
The MRF7S16150HSR5 NI-780S ceramic flange must be bolted to a heatsink or copper spreader with thermal interface material (a 1.5 mm thermal pad or indium foil is standard). The datasheet thermal-resistance figures must be combined with worst-case dissipation (typically 20–30 W at 32 W Pout / 28 V Class AB bias) when sizing the heatsink. Do not assume the ceramic package dissipates heat through anything other than the metalized flange back-surface.
Input and output matching networks are realized as discrete microstrip or stripline networks on the host board; the NI-780S package leads sit at the PCB edge rather than a true SMT pad pattern. Keep the gate lead length under 3 mm to maintain stability, and use the minimum via count possible on the drain bias feed-through (inductor ferrite bead plus bypass). The exposed flange grounds should use multiple short, low-inductance mounting bolts to a copper spreader.
Common pitfall: applying +28 V drain before the gate has been pulled to negative VGS (typical -2 to -5 V bias). Without this sequencing the device can partially turn on during power ramp and over-dissipate. Use a two-stage sequencer (drain delay vs gate release). Pitfall 2: using an SO-239 / N-flange with too much lead length; source-lead inductance above 1 nH will destabilize the broadband gain. Pitfall 3: the part is a frequent counterfeit recycling target; always require a manufacturer CoC for mission-critical orders.
Информация о соответствии
RoHS status 'Not applicable' per catalog aggregator; older RF power MOSFETs were designed before RoHS hardening was required. Use MRF7S16150HSR5G suffix variant if RoHS compliance is mandatory for the application. Verify with the latest manufacturer datasheet revision for any compliance changes.
