MRFE6S9160HSR3 - 160W RF Power LDMOS 880MHz | NXP
Артикул: MRFE6S9160HSR3 ✓ Активен| Кол-во | Цена за ед. | Итого |
|---|---|---|
| 1 | $78.5 | $78,50 |
| 10 | $72.4 | $724,00 |
| 100 | $64.1 | $6.410,00 |
| 250 | $59.85 | $14.962,50 |
| 500 | $55.2 | $27.600,00 |
MRFE6S9160HSR3 Обзор
An RF power LDMOS (Laterally Diffused Metal-Oxide Semiconductor) transistor is a specialized power MOSFET optimized for high-frequency, high-power amplification. RF power transistors sit within the power semiconductor taxonomy: LDMOS -> power MOSFET -> discrete transistor -> power semiconductor. They are the dominant technology for cellular base-station power amplifiers below 3 GHz, displacing older silicon bipolar and GaAs parts because of high gain, high efficiency, and outstanding ruggedness into VSWR mismatched loads.
Key features include broadband operation across 865-960 MHz covering GSM, GSM EDGE, and N-CDMA bands, integrated ESD protection, and enhanced thermal conduction via the NI-780S flange. The device is specified for a VDD of 28 V, IDQ of 1200 mA, and IS-95 CDMA drive at 9.8 dB PAR. ACPR is -46.8 dBc at 750 kHz offset, enabling multicarrier amplifier compliance with 3GPP spectral mask requirements.
The MRFE6S9160HSR3 uses NXP's 6th-generation high-voltage LDMOS (HV6E) process, which provides a 66V drain-source voltage rating and tight threshold control for repeatable class-AB biasing. Internal input matching simplifies PCB layout and reduces external component count. Compared to the older MRF6S9100H family, HV6E offers higher gain, better efficiency, and integrated ESD that protects the die during handling and assembly.
Typical applications include single-carrier and multicarrier N-CDMA driver or final-stage amplifiers in 900 MHz GSM/EDGE base stations, public-safety repeaters, and industrial RF heating at sub-GHz frequencies. The NI-780S bolted-flange package allows direct mounting to a heatsink for continuous-wave operation. As of 2026-10-16, distributor pricing is available from Mouser and NXP direct.
When designing with this part, mount the flange to a flat heatsink with thermal compound, ensure source grounding on both the lead and the mounting flange, and stabilize VDD with low-ESR bulk and decoupling capacitors. Operate within the SOA at all temperatures and respect the 1.2 A IDQ bias envelope. This page synthesizes distributor pricing, drop-in alternatives, and design notes not found in the manufacturer datasheet alone.
Аналоги без доработки для MRFE6S9160HSR3 — тот же корпус, pin-to-pin совместимость. Компоненты в других корпусах, требующие переработки PCB, исключены.
Варианты в этой серии
Модели той же серии, совместимые без доработки с MRFE6S9160HSR3 (тот же форм-фактор и посадочное место) — отличается по Mounting Type, Transistor Type, Drain Efficiency, Package, Test Frequency.
Инструмент быстрого сравнения — выберите альтернативные компоненты для сравнения бок о бок:
MRFE6S9160HR3
✅ Прямая замена✓ В наличии
$25.2 / шт.
Открыть даташит →MRFE6S9125NR1
✅ Прямая замена📋 Справочный аналог (нет в каталоге)
MRF8S9102NR3
✅ Прямая замена✓ В наличии
$24.1 / шт.
Открыть даташит →MRFE6S9060NR1
✅ Прямая замена ⚠️ Характеристики не проверены📋 Справочный аналог (нет в каталоге)
BLF871
✅ Прямая замена📋 Справочный аналог (нет в каталоге)
MRFE6S9160HSR3 Максимальные параметры и электрические характеристики
| Manufacturer | NXP Semiconductors (formerly Freescale) |
| Part Number | MRFE6S9160HSR3 |
| Тип транзистора | LDMOS, N-Channel, Enhancement-Mode, Lateral |
| Drain-Source Voltage (VDSS) | 66 V (rated) |
| Operating Drain Voltage (VDD) | 28 V (typical bias) |
| Quiescent Current (IDQ) | 1200 mA |
| Operating Frequency Range | 865 MHz to 960 MHz |
| Test Frequency | 880 MHz |
| Output Power (Pout) Avg. | 35 W (under N-CDMA drive, 9.8 dB PAR) |
| Output Power Peak | 160 W (peak envelope) |
| Power Gain | 21 dB (typical at 880 MHz) |
| Drain Efficiency | 31% (typical at 35 W avg.) |
| ACPR at 750 kHz Offset | -46.8 dBc |
| Корпус | NI-780S (NI780HS) ceramic, bolted flange |
| Тип монтажа | Through-hole / chassis mount with flange |
| Technology | HV6E (6th gen high-voltage LDMOS) |
Конфигурация выводов MRFE6S9160HSR3
| Контакт 1 | DRAIN — RF output drain (connected to flange and ceramic body) |
| Контакт 2 | GATE — RF input gate (DC bias and RF drive) |
| Контакт 3 | SOURCE — Source ground (also grounded through flange) |
| Контакт FLANGE | FLANGE — Mounting flange and primary thermal path (DC and RF ground) |
DC Область безопасной работы (MRFE6S9160H family)
Типичное применение
MRFE6S9160HSR3 подходит для 6 применениеs: 900 MHz GSM/EDGE Base Station Final Stage, N-CDMA / 3G Cellular Repeater Amplifier, Multicarrier Power Amplifier (MCPA) Module, Public-Safety / First-Responder Radio Infrastructure, Industrial / Scientific Sub-GHz RF Heating, Driver Stage for Higher-Power Doherty Amplifiers.
900 MHz GSM/EDGE Base Station Final Stage
The MRFE6S9160HSR3 is the industry-default final-stage LDMOS for 900 MHz GSM and GSM EDGE base-station power amplifiers. Its 35 W average N-CDMA output at 28 V VDD maps directly to the typical 2-carrier EDGE PA module rating, and 31% drain efficiency at 9.8 dB PAR reduces heat-sinking BOM cost versus older-generation devices. The device's 21 dB gain eliminates a prior driver stage in many lineups, and -46.8 dBc ACPR comfortably clears 3GPP spectral mask requirements. With proven NXP HV6E reliability and OEM-grade ruggedness into 5:1 VSWR, it is specified by leading base-station OEMs for greenfield and upgrade deployments alike.
Рекомендуется
N-CDMA / 3G Cellular Repeater Amplifier
In N-CDMA and 3G UMTS repeater or booster installations operating in the 865-960 MHz band, the MRFE6S9160HSR3 provides the final RF amplification stage with the linearity required for high PAR signals. Its -46.8 dBc ACPR at 750 kHz offset easily meets 3GPP2 spectral emission requirements, while the 21 dB gain closes the link budget without a separate predriver. The NI-780S ceramic flange allows direct heatsink mounting in compact tower-top or indoor repeater enclosures, and the 28 V operation simplifies power-distribution design for outdoor PoE-fed systems. The part's high ruggedness into mismatched loads protects against antenna disconnect events common in repeater deployments.
Рекомендуется
Multicarrier Power Amplifier (MCPA) Module
Multicarrier power amplifier modules for GSM and EDGE base stations combine the MRFE6S9160HSR3 across multiple power-combined carriers in a single chassis. The device's 31% efficiency at 35 W average reduces DC power consumption - a major OPEX driver for macro-cell sites - while its 66 V VDS rating provides 2.3x voltage headroom for safe operation under multicarrier envelope peaks. The NI-780S flange delivers repeatable thermal performance essential for unit-to-unit production consistency. NXP's HV6E datasheet characterization includes multicarrier drive curves that simplify MCPA module gain and efficiency budgeting.
Рекомендуется
Public-Safety / First-Responder Radio Infrastructure
In the 900 MHz public-safety and first-responder radio infrastructure market, the MRFE6S9160HSR3 drives high-power repeaters and base stations requiring continuous duty RF output. Its 35 W average N-CDMA rating provides comfortable margin for analog FM and P25 operation, while the 28 V rail simplifies integration with standard industrial power systems. The device's proven ruggedness into high VSWR is essential in public-safety deployments where antenna failures or cable damage are field-typical events. The NI-780S bolted flange ensures long-term mechanical stability under continuous vibration in pole-mount or rooftop installations.
Рекомендуется
Industrial / Scientific Sub-GHz RF Heating
Industrial and scientific RF heating systems operating in the 900 MHz ISM-adjacent bands use the MRFE6S9160HSR3 as a high-power source for dielectric heating, plasma generation, and materials processing. Its 160 W peak envelope and continuous-duty 35 W rating covers a broad dynamic range, and the 21 dB gain simplifies the driver chain in CW or pulsed heating systems. The 66 V VDS rating and 28 V nominal rail leave substantial headroom for transient load mismatches common in industrial heating cavities. The NI-780S flange mounts directly to process cooling plates without special tooling.
Рекомендуется
Driver Stage for Higher-Power Doherty Amplifiers
In Doherty amplifier lineups targeting macro-cell base stations, the MRFE6S9160SR3 (and its MRFE6S9160HSR3 sibling) can be biased as a high-linearity driver for a higher-power final pair. Its 21 dB gain delivers adequate drive to typical 80-100 W peak final stages, and the consistent 28 V rail simplifies envelope-tracking power supply design. The device's broadband 865-960 MHz response handles modern multi-band Doherty lineups spanning 900 MHz cellular with margin. NXP's application notes include reference designs for Doherty DPAs using the MRFE6S9160HSR3 family as both main and peaking drivers.
Рекомендуется
Сводка рекомендуемых товаров
Справочные инженерные данные для MRFE6S9160HSR3 — сравнение, рекомендации по проектированию и информация о соответствии.
Руководство по выбору
Сравнение с аналогами
| Параметр | Этот товар | MRFE6S9160HR3 | MRFE6S9125NR1 | MRF8S9102NR3 | MRFE6S9060NR1 | BLF871 |
|---|---|---|---|---|---|---|
| Brand | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors | Ampleon |
| Package | NI-780S (NI780HS) ceramic flange | NI-780S - same | NI-780 - same family | NI-780 - same family | NI-780 - same family | SOT502 - same family ceramic flange |
| Output Power Average | 35 W | 35 W | 25 W | ~22 W | ~12 W | ~30 W |
| Output Power Peak | 160 W | 160 W | 125 W | ~100 W | ~60 W | ~120 W |
| Operating Frequency | 865-960 MHz | 865-960 MHz | Up to 1000 MHz | Up to 1000 MHz | Up to 1000 MHz | Up to 1000 MHz |
| Power Gain | 21 dB | 21 dB | 20 dB | 21 dB | 20 dB | 19 dB |
| Drain Efficiency | 31% | 31% | 32% | 33% | 30% | 29% |
| Drain-Source Voltage Rating | 66 V | 66 V | 66 V | 70 V (HV8) | 66 V | 50 V |
Ключевые отличия
- Same-die alternate reel code for sourcing flexibility (против MRFE6S9160HR3)
- Higher output power in same package (против MRFE6S9125NR1)
- Cross-brand drop-in option (против Ampleon BLF871)
Заметки по проектированию
At 35 W average output with 31% drain efficiency at 28 V, the MRFE6S9160HSR3 dissipates approximately 78 W of waste heat. The NI-780S flange must be mounted to a flat heatsink with high-quality thermal compound (e.g., Wakefield 120-series or Shin-Etsu G751) and bolted to a flatness < 0.05 mm. Without adequate heatsinking the junction will exceed the 200 C rating within seconds and the part will thermally shut down or fail. In production designs, aim for case temperature below 70 C at full load to ensure long-term reliability. [Estimated: based on datasheet efficiency and standard thermal-resistance values.]
The NI-780S package is a flange-mount device, not a surface-mount part - the RF input and output traces transition from microstrip or stripline on the PCB to the package leads at the chassis boundary. Keep all lead lengths under 3 mm and use coplanar waveguide with ground (CPWG) on RO4350B or similar low-loss substrate. Place gate and drain bias decoupling (10 uF tantalum + 100 nF ceramic) within 5 mm of the bias pins. The source pin is internally tied to the flange and provides the only ground return; do not rely on lead grounding alone.
Never operate the MRFE6S9160HSR3 with VDD above 32 V continuously - the 66 V VDS rating is a transient rating, not the operating rail. Sequence gate bias before VDD to avoid Ig-rush; gate breakdown can occur at VGS beyond +/-20 V. Do not bias without RF drive at full IDQ - class-AB quiescent current of 1200 mA with zero RF drive causes excessive dissipation. Use NXP's recommended gate-bias network (typically 10 kohm between gate and ground for self-bias) to avoid thermal runaway.
Информация о соответствии
MRFE6S9160HSR3 was released by Freescale (now NXP) prior to widespread RoHS transition for RF power transistors. NI-780S ceramic-flange RF power devices historically use Pb-containing die attach for thermal performance. Confirm RoHS / lead-free status via NXP's latest product declaration or distributor listing before designing into RoHS-bound equipment. AEC-Q100 does not apply to discrete RF power transistors - this part is for telecom infrastructure, not automotive.
