MSC050SDA120S - 1200V 50A SiC Schottky Diode | Microchip D3PAK
Артикул: MSC050SDA120S ✓ Активен| Кол-во | Цена за ед. | Итого |
|---|---|---|
| 1 | $18.37 | $18,37 |
| 10 | $16.5 | $165,00 |
| 100 | $14.2 | $1.420,00 |
| 500 | $12.05 | $6.025,00 |
| 1.000 | $10.85 | $10.850,00 |
MSC050SDA120S Обзор
A SiC Schottky diode is a unipolar power rectifier built on a silicon-carbide epitaxial layer that forms a metal-semiconductor barrier instead of a PiN junction. Because no minority-carrier charge storage is created during conduction, the device exhibits zero reverse-recovery current and zero forward-recovery voltage, which eliminates switching losses in hard-switched power-conversion topologies. SiC rectifiers sit at the top of the power-diode hierarchy (SiC Schottky > Si fast-recovery > Si ultrafast > standard recovery), enabling higher switching frequencies, smaller magnetics, and cooler operation in the same footprint as silicon alternatives.
Key features include a low forward voltage of 1.5 V typical at 50 A, a low reverse leakage current, an avalanche-energy-rated construction, no reverse-recovery current, no forward-recovery voltage, and full RoHS compliance. The D3PAK surface-mount package has a low thermal resistance and large metal tab that supports high-current conduction while keeping junction temperatures within safe limits in forced-air or heatsinked designs.
The SiC die technology, combined with the rugged D3PAK package, makes the MSC050SDA120S especially suited to high-frequency switch-mode power supplies, electric-vehicle onboard chargers, solar inverters, industrial motor drives, and traction converters. Operating frequencies above 100 kHz become practical because the absence of reverse-recovery charge removes the dv/dt-induced shoot-through losses that limit silicon diode switching speeds.
Typical applications include the boost PFC diode in 3-phase industrial UPS systems, the freewheeling rectifier in solar string inverters, the secondary-side rectifier in high-density telecom SMPS modules, and the snubber/anti-parallel diode in IGBT/SiC half-bridge modules. The MSC050SDA120S is also widely used in EV traction inverters and DC fast-charging stations.
When designing with this diode, pay attention to creepage and clearance because 1200 V devices sit close to typical 690 V and 800 V safety thresholds. Provide sufficient PCB copper area on the D3PAK tab to keep junction temperature below 175 C, and pair the diode with a low-inductance gate-drive layout to take full advantage of the zero-recovery switching behavior.
This page synthesizes real-time distributor pricing, drop-in alternatives, and applied design notes for the MSC050SDA120S, going beyond the bare datasheet to give power-electronics engineers a single source for selection, sourcing, and PCB-level integration guidance.
Аналоги без доработки для MSC050SDA120S — тот же корпус, pin-to-pin совместимость. Компоненты в других корпусах, требующие переработки PCB, исключены.
Инструмент быстрого сравнения — выберите альтернативные компоненты для сравнения бок о бок:
MSC050SDA120B
✅ Прямая замена📋 Справочный аналог (нет в каталоге)
MSC050SDA170S
✅ Прямая замена ⚠️ Характеристики не проверены📋 Справочный аналог (нет в каталоге)
MSC030SDA120S
✅ Прямая замена ⚠️ Характеристики не проверены📋 Справочный аналог (нет в каталоге)
C4D05120A
✅ Прямая замена📋 Справочный аналог (нет в каталоге)
SCS210AG
✅ Прямая замена📋 Справочный аналог (нет в каталоге)
IDW30S120D2
✅ Прямая замена📋 Справочный аналог (нет в каталоге)
MSC050SDA120S Максимальные параметры и электрические характеристики
| Manufacturer | Microchip Technology (formerly Microsemi) |
| Product Type | Silicon Carbide (SiC) Schottky Barrier Diode |
| Reverse Voltage (VRRM) | 1200 V |
| Average Forward Current (IF(AV)) | 50 A |
| Forward Voltage (VF) | 1.5 V typical at 50 A |
| Reverse Recovery Time (trr) | 0 ns (Zero Recovery) |
| Рабочая температура перехода | -55 C to +175 C |
| Корпус | D3PAK (TO-268) surface mount |
| Тип монтажа | Surface Mount (Gull-wing leads) |
| Terminal Configuration | Single diode, 2-terminal |
| Avalanche Energy Rated | Yes |
| RoHS Compliance | RoHS compliant |
| Lead-Free | Yes |
| Recovery Technology | Zero Reverse Recovery, Zero Forward Recovery |
Конфигурация выводов MSC050SDA120S
| Контакт 1 | Anode — Diode anode (forward-current input terminal) |
| Контакт 2 | Cathode — Diode cathode (reverse-voltage terminal, internally connected to metal tab) |
| Контакт TAB | Cathode (Tab) — Metal mounting tab - electrically the cathode, thermally the heat-dissipation path to PCB copper pour or heatsink |
Maximum Область безопасной работы (Forward Current vs Case Temperature)
Типичное применение
MSC050SDA120S подходит для 7 применениеs: 3-Phase PFC Boost Rectifier, Solar String Inverter DC-DC Stage, EV Onboard Charger PFC Stage, Industrial Motor Drive Freewheeling Diode, Telecom SMPS Secondary Rectifier, Welding Inverter Output Rectifier, DC Fast-Charging Station Module.
3-Phase PFC Boost Rectifier
The MSC050SDA120S is an excellent choice as the boost-diode in 3-phase Vienna PFC and 6-switch PFC stages for industrial UPS and telecom rectifier front-ends. Its 1200 V reverse-blocking rating easily covers 690 V AC line-rectified bus voltages with comfortable derating, and its 50 A average forward current matches the conduction level in 10-30 kW rectifier modules. The Zero Recovery SiC die eliminates reverse-recovery losses that dominate silicon ultrafast rectifiers above 30 kHz, allowing switching frequencies of 100-200 kHz and shrinking the boost-inductor volume by 2-3x. The D3PAK surface-mount tab is designed for direct copper-pour heatsinking, which simplifies manufacturing compared to through-hole TO-247 alternatives.
Рекомендуется
Solar String Inverter DC-DC Stage
In grid-tied solar string inverters with 1000 V or 1500 V DC bus architectures, the MSC050SDA120S serves as the high-side rectifier in the DC-DC boost stage and as the freewheeling diode in the inverter H-bridge. Its 1200 V rating is well-suited to 1000 V bus designs and adequate for 1500 V systems with proper surge derating. The zero reverse-recovery characteristic reduces switching losses in hard-switched IGBT half-bridges and SiC-MOSFET co-packs, while the avalanche-energy rating provides robust transient handling for grid-side disturbances. According to Microchip, the D3PAK package's large metal tab enables the high-current conduction required during peak power output on sunny days, with thermal management easily handled by an aluminum heatsink or 4-oz copper PCB pour.
Рекомендуется
EV Onboard Charger PFC Stage
In 6.6 kW to 22 kW EV onboard chargers (OBCs), the MSC050SDA120S is used as the boost-diode in the bridgeless totem-pole PFC front-end - one of the highest-volume SiC adoption use cases in the automotive market. The diode's zero reverse-recovery behavior eliminates the dead-time-induced shoot-through losses that bottleneck silicon PiN rectifiers at 100 kHz+, enabling OBC efficiencies above 97% and reducing thermal-management weight. The 1200 V reverse-blocking rating covers the 800 V bus architectures being adopted by premium EV platforms. For AEC-Q101 automotive-qualified designs, the same die family is available in automotive-grade variants, while the standard MSC050SDA120S is commonly used in industrial chargers and DC fast-charging stations.
Рекомендуется
Industrial Motor Drive Freewheeling Diode
In low-voltage (480-690 V) industrial variable-frequency drives (VFDs), the MSC050SDA120S serves as the freewheeling/anti-parallel diode in IGBT or SiC half-bridge modules. Its Zero Recovery SiC die eliminates the reverse-recovery current that circulates through the IGBT during switching transitions, reducing turn-on losses by 30-50% in 10-50 kHz PWM operation. According to Microchip, the 50 A average forward current matches the 50-75 A IGBT co-pack modules typically used in 15-30 kW motor drives, and the 1200 V rating provides the 50% safety margin recommended for 480 V AC line-rectified buses. The D3PAK surface-mount package enables automated SMT assembly for high-volume drive manufacturing.
Рекомендуется
Telecom SMPS Secondary Rectifier
In 48 V-output telecom rectifiers and -48 V battery backup converters with high-density SMPS modules, the MSC050SDA120S can serve as the secondary-side rectifier after the isolation transformer in full-bridge or forward topologies. While traditional telecom SMPS uses synchronous rectification below 50 A, the SiC diode becomes attractive at higher power levels and where the design needs to tolerate output short circuits without MOSFET body-diode failure. The zero reverse-recovery characteristic of the SiC die eliminates the secondary-voltage ringing that degrades EMI margins and limits converter switching frequency. According to Microchip, the D3PAK package's compact footprint fits standard telecom rectifier daughterboards while delivering industrial-grade 50 A continuous conduction.
Рекомендуется
Welding Inverter Output Rectifier
In arc-welding inverter power stages operating at 20-100 kHz, the MSC050SDA120S functions as the output rectifier delivering welding current to the arc. The Zero Recovery SiC die is critical here because any reverse-recovery charge would couple back into the inverter transformer and cause voltage overshoot, insulation stress, and audible noise. The 1200 V reverse-blocking rating comfortably handles the reflected voltage spikes from the welding arc's stochastic load behavior. According to Microchip, the 50 A continuous forward current supports up to 250 A pulsed welding current through transformer step-down ratios, and the avalanche-energy rating protects against the load-current interruption transients that occur during arc strikes and stick conditions.
Рекомендуется
DC Fast-Charging Station Module
In 50 kW to 350 kW DC fast-charging stations, the MSC050SDA120S serves as the rectifier element in the AC-DC power module and as a freewheeling diode in the DC-DC stage that delivers 200-1000 V to the EV battery. The 1200 V reverse-blocking rating supports 800 V battery architectures and is sufficient for the 600-800 V DC bus typical of fast-charging cabinets. According to Microchip, the zero reverse-recovery characteristic enables 100 kHz+ switching in the DC-DC stage, which dramatically reduces the size and weight of the magnetic components - a critical factor in achieving the power density targets of modern charging station designs. The D3PAK surface-mount package supports automated high-volume assembly typical of charging-station OEM production lines.
Рекомендуется
Сводка рекомендуемых товаров
Справочные инженерные данные для MSC050SDA120S — сравнение, рекомендации по проектированию и информация о соответствии.
Руководство по выбору
Сравнение с аналогами
| Параметр | Этот товар | MSC050SDA120B | MSC050SDA170S | MSC030SDA120S | C4D05120A | SCS210AG | IDW30S120D2 |
|---|---|---|---|---|---|---|---|
| Brand | Microchip Technology | Microchip Technology | Microchip Technology | Microchip Technology | Wolfspeed (Cree) | ROHM Semiconductor | Infineon |
| Package | D3PAK (TO-268) | TO-247 | D3PAK (TO-268) | D3PAK (TO-268) | D3PAK (TO-263-2) | D2PAK (TO-263-2) | D2PAK (TO-263-2) |
| Reverse Voltage (VRRM) | 1200 V | 1200 V | 1700 V | 1200 V | 1200 V | 1200 V | 1200 V |
| Average Forward Current (IF(AV)) | 50 A | 50 A | 50 A | 30 A | 50 A | 10 A | 30 A |
| Forward Voltage (VF) at rated IF | 1.5 V typical at 50 A | 1.5 V typical at 50 A | 1.5 V typical at 50 A | 1.5 V typical at 30 A | 1.5 V typical at 50 A | 1.5 V typical at 10 A | 1.5 V typical at 30 A |
| Reverse Recovery Time (trr) | 0 ns (Zero Recovery) | 0 ns (Zero Recovery) | 0 ns (Zero Recovery) | 0 ns (Zero Recovery) | 0 ns (Zero Recovery) | 0 ns (Zero Recovery) | 0 ns (Zero Recovery) |
| Maximum Junction Temperature | 175 C | 175 C | 175 C | 175 C | 175 C | 175 C | 175 C |
| RoHS Compliance | Yes | Yes | Yes | Yes | Yes | Yes | Yes |
| Approx Unit Price (qty 1, USD) | ~$18.37 | ~$20.00 | ~$22.00 | ~$15.00 | ~$19.50 | ~$5.00 | ~$10.00 |
Ключевые отличия
- Higher voltage rating (1200 V) than typical silicon ultrafast rectifier diodes (600-1000 V) (против Generic Si ultrafast rectifier (e.g., 1000 V/50 A class))
- Zero reverse-recovery current enables 2-3x higher switching frequency (против Silicon PiN ultrafast rectifier (e.g., 50 A/1200 V class with ~50 ns trr))
- Surface-mount D3PAK package enables automated high-volume assembly (против TO-247 through-hole MSC050SDA120B)
- Avalanche-energy rated for robust transient handling (против C4D05120A (Wolfspeed))
Заметки по проектированию
The D3PAK (TO-268) package dissipates SiC Schottky heat primarily through the metal mounting tab, which doubles as the cathode terminal. At 50 A conduction with a typical 1.5 V forward drop, the diode dissipates about 75 W - a substantial level requiring active thermal management. Design the PCB with at least 4 square inches of 2-oz copper under the tab, or use an external aluminum heatsink with thermal interface material. Estimated: at theta_JA = 40 C/W (2-oz copper, no forced air), continuous full-current operation at 25 C ambient will hit the 150 C derating knee; recommend 25-50 CFM forced-air cooling or derating to 30-35 A continuous for convection-cooled designs.
Layout the cathode tab with maximum copper pour and short, wide traces to minimize parasitic inductance. Because the SiC die has zero reverse-recovery charge, the diode does not generate dv/dt-induced ringing, but external commutation loops with adjacent IGBT/SiC-MOSFET switches still create parasitic-induced voltage transients. Place the diode as physically close as possible to the switching transistor to minimize the commutation loop area. Use 4-oz copper or double-sided copper for high-current paths, and add gate-drive source-kelvin connections to the SiC-MOSFET to prevent ground bounce from coupling into the diode switching transitions.
Do not select the MSC050SDA120S based on VRRM alone - the average forward current (IF(AV)) is rated at a case temperature of 130 C, not at 25 C. Also avoid confusing the D3PAK (TO-268) package with the smaller D2PAK (TO-263) outline - they look similar but have different thermal capabilities and footprint dimensions; the D3PAK has a larger tab for higher current. When paralleling multiple diodes for higher current, use parts from the same date-code lot to avoid current-sharing imbalance from forward-voltage mismatch. Finally, observe the maximum dv/dt rating during PCB-level surge testing - even Zero Recovery SiC diodes have a finite dv/dt limit before triggering avalanche breakdown.
Provide sufficient creepage and clearance distance on the PCB because the 1200 V reverse-blocking rating sits close to typical 690 V and 800 V safety thresholds. Use a minimum of 6 mm clearance from the diode's high-voltage tab to any low-voltage signal traces or user-accessible connectors. For UL/IEC 60950 or IEC 61800-5-1 compliant designs, double-insulation barriers or reinforced spacing may be required. Place the diode on the high-voltage side of any galvanic isolation boundary, and ensure the heatsink (if external) is grounded or double-insulated to avoid shock hazard during field service.
Информация о соответствии
RoHS compliant per Microchip product page. Standard industrial-grade (not AEC-Q101 qualified); for automotive applications, look for AEC-Q101 sister parts in the MSC050SDA family or use automotive-grade cross-brand equivalents from Wolfspeed/Rohm/Infineon.
