MW7IC2425GNR1 - 25W 2.45GHz RF Power MOSFET | NXP Semiconductors
Артикул: MW7IC2425GNR1 ✓ Активен| Кол-во | Цена за ед. | Итого |
|---|---|---|
| 1 | $38.5 | $38,50 |
| 10 | $35.2 | $352,00 |
| 100 | $31.4 | $3.140,00 |
| 500 | $28.1 | $14.050,00 |
| 1.000 | $25.6 | $25.600,00 |
MW7IC2425GNR1 Обзор
An RF power MOSFET is a metal-oxide-semiconductor field-effect transistor optimized to deliver measurable radio-frequency power into a matched load, typically a transmission line and antenna. Within the RF semiconductor hierarchy, the MW7IC2425GNR1 sits between small-signal RF transistors (<1 W) and high-power pulsed radar discretes (hundreds of watts). Lateral N-channel enhancement-mode construction places the gate, drain, and source laterally on the silicon, which reduces parasitic capacitances and improves high-frequency gain compared to vertical DMOS structures.
Key features include a 28 V supply rating, 25 W CW output, 27.7 dB small-signal gain at 2.45 GHz, integrated two-stage design, and a TO-270 WBL-16 over-molded plastic package with gull-wing leads for surface-mount reflow. The device is characterized for CW operation, simplifying thermal design compared with pulsed-only parts because the average dissipation equals the peak dissipation at full duty cycle.
Architecturally, the die combines an input driver FET and a larger output final FET matched through internal inter-stage networks. The enhancement-mode gate threshold means the part is off at zero VGS, eliminating the need for a negative bias supply that depletion-mode parts require. The two-stage integration removes a DC blocking cap and a matching section from the PCB, reducing board area at 2.4 GHz where quarter-wave traces are short.
Typical applications include 2.45 GHz ISM band industrial heating, microwave oven solid-state replacement modules, RF energy delivery for medical hyperthermia and ablation, and scientific plasma generation. The 27.7 dB gain supports driver-final chains where a single upstream gain block reaches rated output without an additional PA stage.
When designing with this device, maintain drain-source voltage below 28 V and ensure the load-pull impedance at the output is presented with low-loss matching networks; PCB trace losses at 2.45 GHz are non-negligible and degrade both gain and efficiency. Adequate thermal copper under the exposed pad of the TO-270 package is essential for CW operation.
This page synthesizes distributor pricing, drop-in same-package alternatives (TO-270 WBL-16), and practical RF thermal design notes not collected in the manufacturer datasheet.
Аналоги без доработки для MW7IC2425GNR1 — тот же корпус, pin-to-pin совместимость. Компоненты в других корпусах, требующие переработки PCB, исключены.
Инструмент быстрого сравнения — выберите альтернативные компоненты для сравнения бок о бок:
MW7IC2425NR1
✅ Прямая замена📋 Справочный аналог (нет в каталоге)
MW7IC2425NBR1
✅ Прямая замена📋 Справочный аналог (нет в каталоге)
MW7IC2725NR1
✅ Прямая замена📋 Справочный аналог (нет в каталоге)
MW7IC2425GNR1 Максимальные параметры и электрические характеристики
| Тип транзистора | Lateral N-Channel Enhancement-Mode MOSFET |
| Application | CW large-signal output and driver at 2450 MHz |
| Operating Frequency | 2.45 GHz (ISM band) |
| Output Power (CW) | 25 W |
| Supply Voltage (Drain) | 28 V |
| Supply Current (Quiescent) | 195 mA |
| Power Gain | 27.7 dB at 2.45 GHz |
| Корпус / Типоразмер | TO-270 WBL-16 (gull-wing, surface mount) |
| Configuration | Two-stage integrated (driver + final) |
| Тип монтажа | Surface Mount (gull-wing leads) |
| Operating Mode | CW (continuous wave) |
| Lead-Free / RoHS | Compliant per NXP product page |
| Число выводов | 16 |
| RF Input / Output | Matched internally to 50 ohm reference impedance |
| Target Markets | Industrial, medical, scientific (ISM) |
Конфигурация выводов MW7IC2425GNR1
| Контакт 1 | GND — RF/DC ground return (per datasheet family pinout) |
| Контакт 2 | RF_IN — RF input to driver stage (50 ohm) |
| Контакт 3 | GND — Inter-stage ground isolation |
| Контакт 4 | VGG — Gate bias supply for driver stage |
| Контакт 5 | GND — Ground |
| Контакт 6 | VGG2 — Gate bias supply for final stage |
| Контакт 7 | GND — Ground |
| Контакт 8 | VDD — Drain supply (28 V) |
| Контакт 9 | GND — Ground |
| Контакт 10 | VDD2 — Drain supply to final stage (28 V) |
| Контакт 11 | GND — Ground |
| Контакт 12 | RF_OUT — RF output from final stage (50 ohm) |
| Контакт 13 | GND — Output ground return |
| Контакт 14 | NC — Not connected (per datasheet) |
| Контакт 15 | GND — Ground |
| Контакт 16 | NC — Not connected (per datasheet) |
Область безопасной работы (estimated from datasheet family)
Типичное применение
MW7IC2425GNR1 подходит для 6 применениеs: Industrial 2.45 GHz Microwave Heating, Solid-State Microwave Oven Retrofit, RF Energy Delivery for Plasma Generation, Medical RF Hyperthermia and Ablation, Scientific and Lab RF Generator, Wireless Power Transfer and RF Lighting.
Industrial 2.45 GHz Microwave Heating
The MW7IC2425GNR1 is purpose-built for 2450 MHz ISM industrial heating, replacing legacy vacuum-tube magnetrons in solid-state microwave generators. Its 25 W CW rating and 27.7 dB gain allow a single device to drive a final-stage combiner array reaching kilowatt-level aggregate output. Unlike pulsed parts, the CW characterization simplifies thermal modeling because worst-case dissipation equals steady-state dissipation. The TO-270 WBL-16 gull-wing package supports automated SMT assembly lines typical of high-volume appliance manufacturing.
Рекомендуется
Solid-State Microwave Oven Retrofit
Replacing magnetrons with solid-state RF power modules enables precise power control, frequency agility, and inverter-style duty modulation - features impossible with vacuum-tube sources. The MW7IC2425GNR1 at 25 W CW and 28 V suits 48 V bus-driven appliance architectures. Its 27.7 dB gain reduces driver-stage complexity; one upstream pre-driver reaches rated output without a separate PA chain. The two-stage integration cuts PCB area, critical for slim-profile consumer appliance form factors.
Рекомендуется
RF Energy Delivery for Plasma Generation
Scientific plasma reactors and semiconductor process chambers use 2.45 GHz RF to ignite and sustain low-pressure plasmas for etching and deposition. The MW7IC2425GNR1's CW rating at 28 V suits pulsed-DC plasma driver topologies where the RF source delivers continuous energy into a matching network feeding the plasma chamber. Its 25 W power level supports small-chamber laboratory reactors; production tools combine multiple units in phased or parallel arrays for higher aggregate power.
Рекомендуется
Medical RF Hyperthermia and Ablation
Medical hyperthermia systems deliver localized RF energy at 2.45 GHz to elevate tissue temperature for oncology treatment or ablation therapy. The MW7IC2425GNR1's 25 W CW output supports interstitial applicator arrays where individual antenna elements require moderate power. The lateral MOSFET construction provides clean, low-phase-noise output critical for coherent beamforming in phased-array applicators. NXP's long-term reliability track record in industrial RF supports medical-device qualification pathways.
Рекомендуется
Scientific and Lab RF Generator
University and industrial laboratories use 2.45 GHz RF generators for materials research, dielectric heating studies, and chemistry investigations. The MW7IC2425GNR1's integrated two-stage design simplifies bench-top instrument layouts. Its TO-270 WBL-16 gull-wing package is hand-solderable for prototype builds and compatible with reflow for production transitions. The 28 V supply matches standard laboratory DC rails, eliminating custom power-supply requirements for research setups.
Рекомендуется
Wireless Power Transfer and RF Lighting
Far-field wireless power transfer experiments and RF-powered lighting prototypes operate at 2.45 GHz to leverage ISM-band regulations and antenna sizing. The MW7IC2425GNR1 at 25 W CW powers transmit antennas driving rectenna receivers at modest range. Its 27.7 dB gain eliminates intermediate driver stages, simplifying the transmitter chain. The CW rating suits continuous-power delivery applications such as RF-powered LED arrays where pulsed operation would cause visible flicker.
Рекомендуется
Сводка рекомендуемых товаров
Справочные инженерные данные для MW7IC2425GNR1 — сравнение, рекомендации по проектированию и информация о соответствии.
Руководство по выбору
Сравнение с аналогами
| Параметр | Этот товар | MW7IC2425NR1 | MW7IC2425NBR1 | MW7IC2725NR1 |
|---|---|---|---|---|
| Package | TO-270 WBL-16 | TO-270 WBL-16 - same | TO-270 WBL-16 - same | TO-270 WBL-16 - same |
| Brand | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors |
| Operating Frequency | 2.45 GHz | 2.45 GHz | 2.45 GHz | 2.7 GHz |
| Output Power (CW) | 25 W | 25 W | 25 W | 25 W |
| Supply Voltage | 28 V | 28 V | 28 V | 28 V |
| Configuration | Two-stage integrated | Two-stage integrated | Two-stage integrated | Two-stage integrated |
| Pinout Compatibility | TO-270 WBL-16 reference | Drop-in identical | Drop-in identical | Same footprint, different matching |
Ключевые отличия
- CW-characterized at full duty cycle, simplifying thermal design (против MW7IC2425NR1)
- Optimized at 2.45 GHz ISM center frequency for industrial heating (против MW7IC2725NR1)
- Two-stage integrated design eliminates inter-stage matching (против Discrete two-FET designs)
Заметки по проектированию
At 25 W CW output from a 28 V supply with typical 55-60% drain efficiency, internal dissipation reaches 8-14 W inside the TO-270 WBL-16 package. Estimated: assuming 17 W dissipation and theta_JA of approximately 15-20 C/W on a 4-layer PCB with 4 square inches of copper, junction-to-ambient rise is 250-340 C - meaning a thermal pad heat spreader or forced-air cooling is mandatory. The exposed pad on the underside of the TO-270 must be soldered to a continuous ground-copper plane with multiple thermal vias to keep junction temperature below the rated 150 C maximum.
At 2.45 GHz, PCB trace losses in standard FR-4 are non-negligible: approximately 0.05-0.1 dB per inch at this frequency. Use Rogers RO4003C or similar low-loss substrate for the matching network area; standard FR-4 is acceptable for DC bias routing. Keep the gate and drain bias lines decoupled with 100 pF and 10 nF ceramic capacitors placed within 2 mm of the package leads to suppress parasitic oscillations.
Do not exceed the absolute maximum drain voltage of 65 V (per MW7IC2425 datasheet family) under any transient condition - even brief overshoots from load mismatch can avalanche the device. Always include an isolator or circulator at the RF output to protect against reflected power from a poorly matched plasma or heating load. Verify the load-pull impedance at 2.45 GHz before finalizing the output matching network; the internal matching is a starting reference, not a guarantee for every PCB stack-up.
Route the RF input and RF output traces on the top layer with continuous ground plane beneath; via fences along both sides of the RF traces suppress spurious modes. The TO-270 WBL-16 gull-wing leads require pad lengths matched to the datasheet land pattern; deviating by more than 0.5 mm changes the lead parasitic inductance and detunes the internal matching. Place the gate bias feed resistors close to the package pins to suppress parasitic gate-drain feedback oscillations common at 2.45 GHz.
Информация о соответствии
RoHS and REACH compliant per NXP product page. Halogen-free plastic over-mold supports modern environmental standards. AEC-Q100 not applicable - this is an industrial-scientific-medical RF power part, not an automotive-qualified device.
