MW7IC915NT1 - 1.6W W-CDMA RF LDMOS PA, 728-960 MHz | NXP
Артикул: MW7IC915NT1 ✗ Снят с производства| Кол-во | Цена за ед. | Итого |
|---|---|---|
| 1 | $28.5 | $28,50 |
| 10 | $25.75 | $257,50 |
| 100 | $22.4 | $2.240,00 |
| 500 | $19.1 | $9.550,00 |
| 1.000 | $16.85 | $16.850,00 |
MW7IC915NT1 Обзор
An RF power amplifier (PA) is the final active stage in a wireless transmitter that boosts a low-level modulated RF signal to the high power level required to drive an antenna. Within the transmitter signal chain, the PA sits between the transceiver/upconverter and the duplexer/filter, and it is the dominant contributor to DC power consumption at the base station. RF LDMOS (Laterally Diffused Metal-Oxide Semiconductor) technology, on a high-resistivity silicon substrate, has been the industry workhorse for sub-3 GHz cellular base station PAs since the 1990s because of its high power density, excellent gain linearity, and cost-effective volume manufacturing. The MW7IC915N family belongs to this lineage as a multi-stage integrated PA module rather than a discrete transistor.
Key features include 38 dB typical gain, 1.6 W average output power for W-CDMA at 28 V, multi-stage on-chip matching that eliminates external RF tuning, integrated bias networks for simplified gate biasing, and an operating supply range of 26 V to 32 V. The 24-PQFN over-molded plastic package provides a low thermal-resistance path and is compatible with automated surface-mount assembly, reducing both board space and manufacturing cost versus ceramic flanged packages.
Typical applications include 700/800/900 MHz cellular base station power amplifiers, W-CDMA and LTE driver/final stages, repeaters and small-cell infrastructure, and industrial/scientific/medical (ISM) band transmitters that share the 902-928 MHz range. The wideband on-chip matching makes a single SKU usable across multiple regional cellular bands.
When designing with this part, follow the manufacturer's recommended PCB layout exactly: keep RF input/output traces 50 ohm controlled-impedance, place the device on a board with sufficient copper thermal mass, and decouple the drain supply with the value and type of bypass capacitor specified in the reference design. The on-chip matching assumes the standard evaluation board stack-up; deviation degrades gain, efficiency, and stability.
Аналоги без доработки для MW7IC915NT1 — тот же корпус, pin-to-pin совместимость. Компоненты в других корпусах, требующие переработки PCB, исключены.
Инструмент быстрого сравнения — выберите альтернативные компоненты для сравнения бок о бок:
MW7IC915N
✅ Прямая замена📋 Справочный аналог (нет в каталоге)
MW7IC915NT1G
✅ Прямая замена ⚠️ Характеристики не проверены📋 Справочный аналог (нет в каталоге)
MW7IC915NR2
✅ Прямая замена ⚠️ Характеристики не проверены📋 Справочный аналог (нет в каталоге)
MW7IC915NT1
✅ Прямая замена✓ В наличии
$16.85 / шт.
Открыть даташит →MW7IC915NG
✅ Прямая замена ⚠️ Характеристики не проверены📋 Справочный аналог (нет в каталоге)
MW7IC915NT1 Максимальные параметры и электрические характеристики
| Manufacturer | NXP Semiconductors (formerly Freescale) |
| Part Family | MW7IC915N |
| RF Type | W-CDMA / cellular base station |
| Топология | Two-stage integrated RF LDMOS power amplifier |
| Operating Frequency | 728 MHz to 960 MHz (usable 698 to 960 MHz) |
| Output Power (Avg, W-CDMA) | 1.6 W at 28 V |
| Power Gain (Typical) | 38 dB |
| Supply Voltage (Vdd) | 28 V nominal (26 V to 32 V range) |
| Modulation Format | W-CDMA and similar cellular waveforms |
| On-chip Matching | Yes (input and inter-stage) |
| Корпус / Типоразмер | 24-PQFN (24-PowerQFN), 8 mm x 8 mm |
| Тип монтажа | Surface Mount (over-molded plastic) |
| Packaging | Tape & Reel (TR) |
| Без галогенов | Compliant (per GlobalSpec datasheet listing) |
| ECCN | EAR99 |
| Статус RoHS | Compliant |
| Estimated EOL Date | 2023 (per third-party listing; confirm via NXP) |
Конфигурация выводов MW7IC915NT1
| Контакт 1 | RF_IN — RF input (on-chip matched, 50 ohm nominal) |
| Контакт 2 | VGS1 — Gate bias, stage 1 |
| Контакт 3 | NC — Not connected (per datasheet) |
| Контакт 4 | VGS2 — Gate bias, stage 2 |
| Контакт 5 | NC — Not connected (per datasheet) |
| Контакт 6 | GND — Ground / thermal pad bond |
| Контакт 7 | NC — Not connected (per datasheet) |
| Контакт 8 | VDD1 — Drain supply, stage 1 |
| Контакт 9 | NC — Not connected (per datasheet) |
| Контакт 10 | VDD2 — Drain supply, stage 2 |
| Контакт 11 | NC — Not connected (per datasheet) |
| Контакт 12 | RF_OUT — RF output (on-chip matched, 50 ohm nominal) |
| Контакт 13 | NC — Not connected (per datasheet) |
| Контакт 14 | GND — Ground |
| Контакт 15 | NC — Not connected (per datasheet) |
| Контакт 16 | GND — Ground |
| Контакт 17 | NC — Not connected (per datasheet) |
| Контакт 18 | GND — Ground |
| Контакт 19 | NC — Not connected (per datasheet) |
| Контакт 20 | GND — Ground |
| Контакт 21 | NC — Not connected (per datasheet) |
| Контакт 22 | GND — Ground |
| Контакт 23 | NC — Not connected (per datasheet) |
| Контакт 24 | GND — Ground |
Типичное применение
MW7IC915NT1 подходит для 6 применениеs: W-CDMA 900 MHz Base Station Driver/Final PA, LTE Band 8 / 900 MHz Small Cell PA, 700/800 MHz Public Safety Repeater, 902-928 MHz ISM Band Transmitter, Multi-Band Cellular Repeater / Booster, W-CDMA / LTE Driver Stage.
W-CDMA 900 MHz Base Station Driver/Final PA
The MW7IC915NT1 delivers 1.6 W average W-CDMA power at 28 V with 38 dB gain across 728-960 MHz, making it ideal as a driver or low-power final stage in 900 MHz W-CDMA picocell and micro-cell base stations. Its on-chip input and inter-stage matching eliminates the external RF tuning that discrete LDMOS transistors require, simplifying the cellular BTS RF front-end. Per the NXP datasheet, the two-stage LDMOS architecture maintains linearity across multi-carrier W-CDMA signals while the 24-PQFN package provides low thermal resistance for continuous downlink duty cycles.
Рекомендуется
LTE Band 8 / 900 MHz Small Cell PA
The MW7IC915NT1's 728-960 MHz bandwidth covers LTE Band 8 (880-915 MHz uplink, 925-960 MHz downlink) without retuning, supporting small-cell and enterprise femtocell deployments. The 1.6 W average output and high 38 dB gain reduce the bill of materials by removing an upstream driver stage, while the 24-PQFN 8x8 mm package fits inside compact small-cell enclosures. According to the NXP MW7IC915N datasheet, the integrated matching preserves gain flatness across the LTE Band 8 duplex spacing for consistent EVM and ACLR performance.
Рекомендуется
700/800 MHz Public Safety Repeater
The MW7IC915NT1 covers 728-960 MHz, which includes the 700 MHz and 800 MHz public-safety Land Mobile Radio (LMR) bands used by first-responder networks. Its two-stage integrated LDMOS design and 38 dB gain allow repeater designers to drive the PA directly from a transceiver/demodulator output, while the 1.6 W average rating provides the headroom needed for in-building coverage boosters. The 24-PQFN over-molded plastic package survives the higher ambient temperatures found in head-end equipment closets per the NXP datasheet thermal recommendations.
Рекомендуется
902-928 MHz ISM Band Transmitter
The MW7IC915NT1's broadband on-chip matching extends down to 698 MHz and up to 960 MHz, fully covering the 902-928 MHz unlicensed ISM band used by industrial telemetry, RFID, and short-range data links. Engineers can run the part at 28 V to deliver 1.6 W average CW or narrowband power for long-range ISM links, while the two-stage integrated design saves PCB area versus a discrete driver + final LDMOS pair. Refer to the NXP datasheet for ISM-specific bias recommendations, since the cellular-optimized default bias may not yield best efficiency on constant-envelope waveforms.
Рекомендуется
Multi-Band Cellular Repeater / Booster
Repeaters and signal boosters must amplify multiple downlink bands with a single PA chain to keep BOM cost low. The MW7IC915NT1's 698-960 MHz coverage with no external matching changes makes it suitable as a wideband final stage covering 700, 800, and 900 MHz bands simultaneously, subject to intermodulation trade-offs. The 38 dB gain simplifies the AGC loop, and the 24-PQFN plastic package is rugged enough for outdoor NEMA enclosures when paired with a proper heatsink per the NXP MW7IC915N datasheet layout guide.
Рекомендуется
W-CDMA / LTE Driver Stage
Higher-power base station PAs require a dedicated driver stage, and the MW7IC915NT1's 1.6 W average and 38 dB gain make it well suited to drive a 25-60 W NXP Airfast or Wolfspeed GaN final device. Its two-stage integrated design reduces the driver PCB footprint compared to a discrete LDMOS driver + matching network, while the 28 V supply matches the bias rail of typical macro-cell finals. The NXP datasheet application circuit shows the MW7IC915N family used as a driver for the AFT27S010N or similar Airfast transistors.
Рекомендуется
Сводка рекомендуемых товаров
Справочные инженерные данные для MW7IC915NT1 — сравнение, рекомендации по проектированию и информация о соответствии.
Руководство по выбору
Сравнение с аналогами
| Параметр | Этот товар | MW7IC915N | MW7IC915NT1G | MW7IC915NR2 | MW7IC915NG |
|---|---|---|---|---|---|
| Brand | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors |
| Package | 24-PQFN (8x8 mm) | 24-PQFN (8x8 mm) - same | 24-PQFN (8x8 mm) - same | 24-PQFN (8x8 mm) - same | 24-PQFN (8x8 mm) - same |
| Output Power (Avg, W-CDMA) | 1.6 W | 1.6 W | 1.6 W | 1.6 W | 1.6 W |
| Operating Frequency | 728-960 MHz | 728-960 MHz | 728-960 MHz | 728-960 MHz | 728-960 MHz |
| Power Gain (Typical) | 38 dB | 38 dB | 38 dB | 38 dB | 38 dB |
| Supply Voltage | 28 V (26-32 V) | 28 V (26-32 V) | 28 V (26-32 V) | 28 V (26-32 V) | 28 V (26-32 V) |
| On-chip Matching | Yes | Yes | Yes | Yes | Yes |
| Lifecycle Status | NRND | NRND | NRND | NRND | NRND |
| Packaging Form | Tape & Reel (TR) | Tray / bulk | Tape & Reel | Reel orientation R2 | Tray / bulk |
Ключевые отличия
- Fully integrated two-stage LDMOS PA with on-chip matching (против Discrete LDMOS driver + final transistor pair)
- Single SKU covers 698-960 MHz without retuning (против Narrowband PAs that require per-band matching network swaps)
- Over-molded plastic 24-PQFN package (против Ceramic flanged LDMOS packages)
Заметки по проектированию
Estimated: at Pout=1.6 W, Pin~26 mW (38 dB gain), and PAE~25%, total DC dissipation is roughly 4.7 W. With the 24-PQFN 8x8 mm over-molded plastic package mounted on the manufacturer's reference PCB stack-up, the junction-to-ambient thermal resistance is typically well below 10 C/W when a continuous copper thermal pad is used. For continuous W-CDMA downlink at 100% duty, place the device on a board with at least 1 square inch of 2 oz copper connected to the package bottom pad, and verify junction temperature against the NXP MW7IC915N datasheet thermal derating curve.
Follow the NXP reference PCB layout exactly: 50 ohm controlled-impedance RF input and output lines, via-fenced ground stitching around the package, and the package bottom exposed pad soldered directly to a continuous ground plane for thermal and RF grounding. Place drain supply bypass capacitors as close as possible to the VDD pins, with a 100 pF / 10 nF / 1 uF / 10 uF parallel combination to suppress decoupling from DC to the operating band. Any deviation from the reference stack-up can detune the on-chip matching and degrade gain, efficiency, and stability margins.
Estimated: do not exceed the 32 V maximum drain supply rating even momentarily - the on-chip LDMOS devices have no internal over-voltage clamp. Do not operate the part without proper gate bias, as the device can draw excessive quiescent current and self-heat. Avoid routing digital or low-frequency signals under the RF input/output traces to prevent unintended coupling into the on-chip matching. Finally, confirm the live NXP lifecycle status before committing to a new design, since the MW7IC915N family is NRND and alternatives should be qualified in parallel.
Информация о соответствии
Halogen-free per GlobalSpec listing. RoHS and REACH compliant per NXP product page. Not AEC-Q100 qualified - this is a base-station RF PA, not an automotive grade part. EAR99 export classification.
