MWE6IC9100NBR1-FR - 100W 869-960MHz LDMOS RF PA | NXP
Артикул: MWE6IC9100NBR1-FR ✓ Активен| Кол-во | Цена за ед. | Итого |
|---|---|---|
| 1 | $145 | $145,00 |
| 10 | $132.5 | $1.325,00 |
| 100 | $118.4 | $11.840,00 |
| 500 | $104.2 | $52.100,00 |
| 1.000 | $92.1 | $92.100,00 |
MWE6IC9100NBR1-FR Обзор
A power amplifier (PA) is the final active RF stage in a transmitter chain that boosts a low-amplitude modulated signal from the exciter up to a transmission-line level suitable for radiation by the antenna. In cellular base-station links, the PA sits between the driver amplifier/digital pre-distortion (DPD) loop and the duplexer/filter. Within the broader system taxonomy this part is a discrete RF semiconductor -> RF power transistor -> LDMOS power IC -> wireless-infrastructure PA. LDMOS (Laterally Diffused Metal-Oxide Semiconductor) remains the dominant cellular-infrastructure PA technology because of its high power density, mature supply chain, and lower cost-per-watt than equivalent GaN devices at sub-3 GHz.
Key performance features include 100 W CW / typical Pout, 33.5 dB gain at 960 MHz, GSM/GSM-EDGE modulation compatibility per the NXP datasheet, on-chip matching on both RF ports, integrated ESD protection on the gate, and a thermally-enhanced TO-272 WB-14 flange that provides low thermal resistance to the system heatsink. The -FR suffix indicates the factory tape-and-reel pack-and-ship orientation supplied to high-volume SMT-compatible base-station OEM lines.
The MWE6IC9100N uses a cascade of two LDMOS gain stages biased in Class-AB, with on-chip inter-stage matching. The 869-960 MHz band covers all global GSM-900 uplink and downlink paths used in cellular macro and micro base stations, which lets one BOM line support multi-region deployments.
Typical applications include 900 MHz GSM/EDGE macro base stations, GSM-900 micro and pico cells, repeater and booster final stages, public-safety Land Mobile Radio (LMR) base stations operating near 900 MHz, and industrial/scientific RF heating links. The integrated matching shortens RF board-design cycles from weeks to days and significantly reduces the BOM.
When designing with this part, mount the flange to a machined or copper heatsink with thermal compound and use 50-ohm microstrip or stripline transitions off the RF leads. Always evaluate linearity (ACLR, EVM) with the intended modulation and apply DPD where required to meet spectral mask and efficiency targets.
This page synthesizes distributor pricing, same-package drop-in alternatives, and design notes not found in the manufacturer datasheet, so an engineer can evaluate the part for a 900 MHz PA design without stitching together multiple sources.
Аналоги без доработки для MWE6IC9100NBR1-FR — тот же корпус, pin-to-pin совместимость. Компоненты в других корпусах, требующие переработки PCB, исключены.
Инструмент быстрого сравнения — выберите альтернативные компоненты для сравнения бок о бок:
MWE6IC9100GNR1
✅ Прямая замена📋 Справочный аналог (нет в каталоге)
MWE6IC9080GNR1
✅ Прямая замена📋 Справочный аналог (нет в каталоге)
MW5IC970NBR1
✅ Прямая замена📋 Справочный аналог (нет в каталоге)
MW5IC970GNBR1
✅ Прямая замена📋 Справочный аналог (нет в каталоге)
MW7IC9100NBR1
✅ Прямая замена ⚠️ Характеристики не проверены📋 Справочный аналог (нет в каталоге)
MWE6IC9100NBR1-FR Максимальные параметры и электрические характеристики
| Technology | RF LDMOS (multi-stage integrated) |
| Frequency Range | 869 MHz to 960 MHz |
| Operating Voltage | 26 V typ (26 V to 32 V rated) |
| Output Power (Pout) | 100 W (CW, typical) |
| Small-Signal Gain | 33.5 dB at 960 MHz |
| Drain Current (Test Condition) | 120 mA (bias reference from DigiKey listing) |
| Input Matching | On-chip (50 ohm nominal) |
| Output Matching | On-chip (50 ohm nominal) |
| Modulation Compatibility | GSM / GSM EDGE (per NXP datasheet) |
| Корпус | TO-272 WB-14 (flat leads, over-molded) |
| Тип монтажа | Flange / through-hole power package (heatsink mount) |
| Lead Configuration | Flat lead variant (-FR suffix), tape and reel packing |
| Operating Mode | Class-AB (typical two-stage cascade) |
| Manufacturer | NXP Semiconductors (formerly Freescale) |
| Packaging | Tape and Reel (FR suffix) |
| Статус RoHS | Compliant (per distributor listings) |
Конфигурация выводов MWE6IC9100NBR1-FR
| Контакт 1 | RFIN — RF input (50 ohm, on-chip matched) |
| Контакт 2 | GND / Flange — RF and DC ground (flange is the primary thermal path; bolt to heatsink) |
| Контакт 3 | VGG1 / Gate Bias Stage 1 — Gate bias for first LDMOS stage |
| Контакт 4 | VGG2 / Gate Bias Stage 2 — Gate bias for second (output) LDMOS stage |
| Контакт 5 | VDD1 / Drain Stage 1 — Drain supply for first LDMOS stage (26-32 V) |
| Контакт 6 | VDD2 / Drain Stage 2 — Drain supply for second/output LDMOS stage (26-32 V) |
| Контакт 7 | RFOUT / VDD — RF output (50 ohm, on-chip matched) tied to drain supply via internal feed |
| Контакт 8 | NC — Not connected (per datasheet lead map) |
| Контакт 9 | NC — Not connected (per datasheet lead map) |
| Контакт 10 | NC — Not connected (per datasheet lead map) |
| Контакт 11 | NC — Not connected (per datasheet lead map) |
| Контакт 12 | NC — Not connected (per datasheet lead map) |
| Контакт 13 | NC — Not connected (per datasheet lead map) |
| Контакт 14 | NC — Not connected (per datasheet lead map) |
MWE6IC9100NBR1-FR Область безопасной работы (estimated envelope based on LDMOS class-AB operation)
Типичное применение
MWE6IC9100NBR1-FR подходит для 6 применениеs: GSM-900 Macro Base Station Final PA, GSM-EDGE Micro / Pico Cell Transmitter, 900 MHz LMR / Public-Safety Base Station PA, Cellular Repeater / Booster Final Stage, ISM 900 MHz Industrial / Scientific Links, Multi-Region Cellular Infrastructure OEM.
GSM-900 Macro Base Station Final PA
The MWE6IC9100NBR1-FR's 869-960 MHz coverage aligns directly with the GSM-900 uplink and downlink spectrum, making it a drop-in final-stage solution for 900 MHz macro base stations. Its 100 W CW Pout and 33.5 dB gain deliver the linear output power required for full-power GSM/EDGE carriers at typical sector configurations (typically 2-4 carriers per PA), while the on-chip input/output matching removes the discrete L/C inter-stage networks that older discrete-LDMOS reference designs demand. Operating from a 26 V rail paired with digital pre-distortion (DPD), the part achieves competitive efficiency at rated Pout while keeping ACLR margins in spec. The TO-272 WB-14 flange bolts directly to the rack heatsink, simplifying thermal design and reducing assembly steps at OEM volume.
Рекомендуется
GSM-EDGE Micro / Pico Cell Transmitter
Lower-power micro and pico cell radios supporting 900 MHz GSM-EDGE deployments reuse the MWE6IC9100NBR1-FR at reduced drive levels, taking advantage of the part's wide gain-bandwidth and on-chip matching to shrink the RF BOM. Operating at 26 V with Pout dialed back to the 20-40 W range, the device still maintains good linearity and efficiency, which is critical when the small-cell enclosure cannot dissipate the heat of a continuously saturated PA. The 33.5 dB gain also lets designers omit a separate driver stage, simplifying the TX chain. Compact SMD-friendly footprint plus tape-and-reel packing (the -FR suffix) supports high-volume SMT-assembly on small-cell PCBs.
Рекомендуется
900 MHz LMR / Public-Safety Base Station PA
Land Mobile Radio networks operating in the 900 MHz band (federal, industrial, public-safety) need a robust RF PA that delivers 100 W with reasonable linearity at 26 V - exactly the operating envelope of the MWE6IC9100NBR1-FR. The integrated matching means the LMR radio designer avoids the labor-intensive tuning of a discrete LDMOS amplifier, and the standard TO-272 WB-14 flange-mount package fits existing heatsink tooling. For analog FM, the device operates well below 1 dB compression; for P25 / DMR digital modulation, a moderate digital-predistortion loop is sufficient to meet spectral-mask requirements. The result is a wide-bandwidth part usable across multiple 900 MHz LMR channel plans.
Рекомендуется
Cellular Repeater / Booster Final Stage
Repeaters and indoor-coverage boosters in the 900 MHz band require compact, matched power amplifiers that drop into existing RF modules without redesigning the matching network. The MWE6IC9100NBR1-FR's on-chip 50 ohm input and output matching shorten the repeater's RF board-design cycle from weeks to days. At 100 W Pout the device can drive a sector-coverage antenna or feed a multi-carrier booster's combiner chain, and the 33.5 dB gain removes the need for a separate driver amplifier. Designers should budget heatsink capacity for sustained operation at rated Pout since repeaters often run continuously at high duty cycle.
Рекомендуется
ISM 900 MHz Industrial / Scientific Links
Industrial and scientific wireless links operating in license-free or lightly licensed 900 MHz ISM allocations (902-928 MHz in the US and similar in other regions) overlap the MWE6IC9100NBR1-FR's 869-960 MHz band. The 100 W continuous power supports long-range point-to-point telemetry, mining and oil-field SCADA links, and far-end booster stages where line-of-sight distances exceed several kilometers. The LDMOS technology and 26 V rail provide a rugged, mature supply chain versus GaN alternatives for this sub-3 GHz ISM usage, and the integrated matching keeps the BOM small - useful when the remote terminal must operate from solar/battery power with minimal serviceability.
Рекомендуется
Multi-Region Cellular Infrastructure OEM
OEMs shipping base-station radios to multiple global regions benefit from a single PA that covers the entire GSM-900 spectrum rather than stocking band-specific variants. The MWE6IC9100NBR1-FR's 869-960 MHz coverage spans the EU GSM-900 band (880-960 MHz) and the APAC/AMPS-900 allocations (869-894 MHz) under one part number, with on-chip matching that shortens RF regulatory qualification for each region. Reducing SKU count lowers inventory carrying cost and simplifies the global BOM. Tape-and-reel packing supports high-volume automated assembly at OEM contract-manufacturer partners.
Рекомендуется
Сводка рекомендуемых товаров
Справочные инженерные данные для MWE6IC9100NBR1-FR — сравнение, рекомендации по проектированию и информация о соответствии.
Руководство по выбору
Сравнение с аналогами
| Параметр | Этот товар | MWE6IC9100GNR1 | MWE6IC9080GNR1 | MW5IC970NBR1 | MW5IC970GNBR1 | MW7IC9100NBR1 |
|---|---|---|---|---|---|---|
| Package | TO-272 WB-14 | TO-272 WB-14 (same family, pin-compatible) | TO-272 WB-14 | TO-272 WB-14 family | TO-272 WB-14 family | TO-272 WB-14 family |
| Brand | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors |
| Frequency Range | 869-960 MHz | 869-960 MHz | 920-960 MHz (narrower) | 960-970 MHz | 960-970 MHz | 900 MHz band (family) |
| Operating Voltage | 26 V (26-32 V rated) | 26 V (family) | 26 V (family) | 26 V (family) | 26 V (family) | 26 V (family) |
| Internal Matching | Yes (input and output, 50 ohm) | Yes (family) | Yes (family) | Yes (family) | Yes (family) | Yes (family) |
| Modulation Compatibility | GSM / GSM EDGE | GSM / GSM EDGE (family) | GSM / GSM EDGE (family) | GSM / EDGE family | GSM / EDGE family | 900 MHz LDMOS family |
| Pin-to-Pin Compatible | Yes | Yes (per FindIC 'completely replace') | Yes (family) | Yes (family) | Yes (family, 'similar instead') | Yes (family) |
Ключевые отличия
- Full 869-960 MHz band coverage in a single TO-272 WB-14 integrated PA (против MWE6IC9080GNR1)
- On-chip input and output matching (против Discrete LDMOS reference designs (pre-2015 era))
- 100 W CW Pout from a 26 V rail (против MWE6IC9100GNR1)
- Tape-and-reel packing orientation (против MWE6IC9100NBR1 (non-FR))
Заметки по проектированию
Mount the TO-272 WB-14 flange to a machined aluminum or copper heatsink using thermal compound; the flange is the primary thermal path. Estimated steady-state Pdiss at 100 W Pout and 26 V supply is on the order of 50-70 W (PAE typically 50-60% for LDMOS class-AB at 900 MHz), so derate the heatsink to keep Tj below 200 C. Use a heatsink rating that holds case temperature below ~70 C in worst-case ambient.
Use 50-ohm microstrip or stripline transitions off the RF leads and keep the RFIN and RFOUT traces short and isolated. The integrated 50-ohm matching means external matching components are not required, but add DC-blocking and bias-tee networks on both RF ports when integrating with the rest of the TX chain. Place gate-bias decoupling capacitors close to the VGG1/VGG2 leads.
Do not exceed the 32 V maximum drain supply or the 100 W Pout target without re-validating load-pull and thermal performance. Avoid operating continuously at P1dB compression for digital modulations; pair the device with a DPD loop to meet ACLR/EVM targets. The -FR suffix denotes tape-and-reel packing only and has no impact on electrical specifications - the same evaluation board and bias settings apply as the MWE6IC9100NBR1.
Информация о соответствии
RoHS compliance confirmed by distributor listings (DigiKey, Mouser). AEC-Q100 not applicable - this is an RF power amplifier, not an automotive-qualified IC. Halogen-free status not directly confirmed by the manufacturer datasheet fetched - left unknown.
