NSBA123JDXV6T5G - 50V 100mA Dual PNP BRT | onsemi
Артикул: NSBA123JDXV6T5G ✗ Снят с производства| Кол-во | Цена за ед. | Итого |
|---|---|---|
| 1 | $0 | $0,00 |
| 10 | $0 | $0,00 |
| 100 | $0 | $0,00 |
| 500 | $0 | $0,00 |
| 1.000 | $0 | $0,00 |
NSBA123JDXV6T5G Обзор
A BRT is a bipolar junction transistor with integrated bias resistors, combining a transistor and its external resistor network into one compact device. This device class sits within the transistor hierarchy: BJT to bipolar transistor to discrete semiconductor. A BRT is useful when a design needs predictable base bias, reduced component count, and a compact surface-mount footprint without using a conventional transistor plus discrete bias resistors.
The verified ratings are 50V VCEO, 100mA continuous collector current, 500mW power dissipation, R1 of 2.2kohm, R2 of 47kohm, and a typical R1/R2 ratio of 0.047. The integrated network simplifies assembly and helps establish the operating point when the base is driven from a defined voltage. The dual configuration provides two PNP channels in one package, useful for complementary control, level switching, or duplicated low-side load paths.
The SOT-563 package is intended for compact surface-mount assemblies. Because this is a discrete transistor rather than a power semiconductor, SOA data is not provided. Verify the complete pin assignment, thermal conditions, and application limits against the manufacturer datasheet before layout or substitution.
Typical uses include digital transistor control stages, low-side switching, logic-level interface circuits, and small-signal PNP load drivers. The integrated bias network is especially helpful when PCB area is constrained or when the design benefits from fewer external parts. Applications requiring higher current, higher voltage isolation, or precise thermal headroom should use a different transistor family.
For reliable operation, connect the base and resistor-network pins according to the verified datasheet pinout, observe the 50V and 100mA limits, and provide adequate copper area for heat dissipation. Check whether the selected logic drive can forward-bias and turn off the PNP channel without exceeding its voltage or current ratings.
This page consolidates verified distributor specifications, practical design guidance, and available cross-reference information to support component selection and PCB planning.
Аналоги без доработки для NSBA123JDXV6T5G — тот же корпус, pin-to-pin совместимость. Компоненты в других корпусах, требующие переработки PCB, исключены.
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NSBA123JDXV6T5G Максимальные параметры и электрические характеристики
| Тип транзистора | Dual PNP pre-biased bipolar transistor |
| Напряжение коллектор-эмиттер (Vceo) | 50 V |
| Continuous Collector Current IC | 100 mA |
| Device Power Dissipation | 500 mW |
| Base Input Resistor R1 | 2.2 kohm |
| Base-Emitter Resistor R2 | 47 kohm |
| Resistor Ratio R1/R2 | 0.047 |
| Channel Count | 2 |
| Polarity | PNP |
| Тип монтажа | Surface mount |
| Корпус | SOT-563 |
| Device Classification | Pre-biased bipolar transistor (BRT) |
| Статус RoHS | unknown |
| REACH Status | unknown |
Руководство по цоколевке NSBA123JDXV6T5G в корпусе sot-563
Цоколевка для NSBA123JDXV6T5G (корпус sot-563). Этот силовой прибор имеет выводы затвора, стока и истока. Для неполяризованных корпусов обратитесь к техническому описанию производителя для точной ориентации вывода 1 и деталей посадочного места. Типичные применения включают проектирование источников питания, управление двигателями и коммутацию нагрузки.
Нет подробных данных о распиновке для NSBA123JDXV6T5G.
Обратитесь к даташиту для полной конфигурации выводов.
Типичное применение
NSBA123JDXV6T5G подходит для 6 применениеs: Logic-Level PNP Switching, Small-Signal Load Drivers, Embedded Logic Control, Low-Side Power Control, Bias-Resistor Simplification, Portable and Compact Control Circuits.
Logic-Level PNP Switching
The NSBA123JDXV6T5G fits small-signal PNP switching because it combines a 50V collector-emitter rating with integrated 2.2kohm and 47kohm bias resistors. In a typical low-side pull-up arrangement, the emitter connects toward the supply and the collector drives the controlled load. The resistor network simplifies base-drive design, while the 100mA continuous current rating is suitable for many control and interface stages. The designer should still verify the actual drive voltage, base current, load startup current, and device dissipation.
Рекомендуется
Small-Signal Load Drivers
Use the NSBA123JDXV6T5G when a compact PNP driver is needed for a light load or control signal rather than a high-power motor. Its dual PNP arrangement allows two independent low-side switching channels in one SOT-563 package. The 50V rating provides useful voltage margin for many low-voltage systems, while the integrated bias network reduces assembly count. Confirm the load's operating current and transient behavior so the continuous 100mA and 500mW ratings are not exceeded.
Рекомендуется
Embedded Logic Control
The NSBA123JDXV6T5G can serve as a compact PNP interface between a control signal and a low-voltage load in embedded systems. Its integrated resistors help establish a defined bias relationship without the separate base and base-emitter resistors used with a conventional BJT. The dual-channel package helps reduce PCB area when two similar switching paths are needed. Validate voltage levels and timing carefully because the built-in resistor values, rather than the logic signal alone, determine the transistor operating point.
Рекомендуется
Low-Side Power Control
For modest low-side control tasks, the NSBA123JDXV6T5G can switch a PNP load path while reducing external bias components. Its 100mA continuous collector current and 50V collector-emitter rating make it more appropriate for signal and light-load control than for motor or high-power relay drives. Use adequate copper for the SOT-563 device and check thermal conditions if the transistor operates near its 500mW rating. Add protection circuitry when the load is inductive or the supply can experience large transients.
Рекомендуется
Bias-Resistor Simplification
The NSBA123JDXV6T5G is useful when a design needs a PNP transistor with a defined integrated bias network rather than a bare transistor plus external resistors. The verified R1 value of 2.2kohm and R2 value of 47kohm allow the circuit designer to account for the bias path during threshold and drive analysis. This can simplify PCB layout and reduce assembly operations. The trade-off is reduced flexibility: changing the bias behavior may require a different resistor value or a conventional discrete transistor network.
Рекомендуется
Portable and Compact Control Circuits
The NSBA123JDXV6T5G is suitable for compact control boards where two PNP channels and integrated bias resistors are valuable in a small SOT-563 footprint. It can support low-power switching, level-interface, and signal-conditioning functions without requiring separate bias resistor packages. The 50V rating is generous for many portable and industrial-control rails, but the 100mA current ceiling remains the main limit for larger loads. Review package orientation and thermal spreading during PCB layout, especially in densely assembled portable devices.
Рекомендуется
Сводка рекомендуемых товаров
Справочные инженерные данные для NSBA123JDXV6T5G — сравнение, рекомендации по проектированию и информация о соответствии.
Руководство по выбору
Ключевые отличия
- Integrated dual bias-resistor channels (против A discrete PNP transistor with external resistors)
- Compact dual-channel surface-mount format (против Two separate single-channel transistor packages)
- 100mA continuous current with 50V rating (против A low-current signal-only PNP transistor)
Заметки по проектированию
Do not treat the NSBA123JDXV6T5G as a bare PNP transistor. Its 2.2kohm R1 and 47kohm R2 are part of the device's bias network, so the logic drive voltage and base current must be calculated with those values included. Before replacing a discrete design, compare the external resistor values and the required base-emitter operating point.
Follow the verified SOT-563 footprint and pin assignment from the manufacturer datasheet when placing the device. Keep the collector and emitter current paths short, avoid routing sensitive high-impedance nodes beneath the package, and provide a continuous ground or return path appropriate to the circuit. Because the provided data does not include a complete pinout, do not infer connections from package position alone.
Estimated: at 100mA and 5V collector-emitter voltage, instantaneous device power would be approximately 0.5W, equal to the verified 500mW device rating before environmental derating. Actual dissipation depends on duty cycle, ambient temperature, copper area, and board thermal resistance. Keep sustained operating point below the manufacturer limit and use thermal analysis for repeated or high-duty-cycle operation.
For switching loads, add suitable protection for inductive kickback, supply transients, and reverse current. The verified 50V VCEO rating applies to the specified test condition, not automatically to every transient waveform. Confirm clamp behavior and current limits in the complete circuit, especially when driving relays, motors, or capacitive loads.
Информация о соответствии
The provided verified data identifies onsemi as the manufacturer and describes the component as a surface-mount pre-biased PNP transistor, but it does not provide RoHS, REACH, AEC-Q100, lead-free, halogen-free, or conflict-minerals declarations.
