SI1563DH-T1-E3 - 20V Complementary N/P MOSFET Array | Vishay
Артикул: SI1563DH-T1-E3 ✓ Активен| Кол-во | Цена за ед. | Итого |
|---|---|---|
| 1 | $0.78 | $0,78 |
| 10 | $0.62 | $6,20 |
| 100 | $0.49 | $49,00 |
| 500 | $0.41 | $205,00 |
| 1.000 | $0.36 | $360,00 |
| 3.000 | $0.29 | $870,00 |
SI1563DH-T1-E3 Обзор
An N/P complementary MOSFET pair is a single-package integration of one N-channel and one P-channel enhancement-mode MOSFET, allowing designers to build push-pull, level-shift, load-switch, and small-signal analog switches with a single SOT-363 footprint. Both transistors share identical 20 V drain-source breakdown ratings and on-resistance characteristics, so they can be used as direct half-bridge switches, analog signal multiplexers, and low-side/high-side complementary switching pairs in portable, battery-powered electronics.
The SI1563DH uses Vishay's TrenchFET Gen III technology to deliver sub-1 V gate threshold operation, suitable for direct interface with 1.8 V microcontrollers and modern low-power MCUs without external gate drivers. Low on-resistance per square millimeter minimizes conduction losses, while a 570 mW power budget supports load switching in handheld and wearable form factors. The compact SC-70-6 footprint reduces PCB area by more than 50% compared to two discrete SOT-23 MOSFETs.
Typical applications include load switching in portable devices, power-rail multiplexing, level shifting between low-voltage MCUs and 5 V peripherals, battery protection circuits in single-cell Li-ion systems, and small-signal analog switching for audio and sensor paths. The complementary topology enables half-bridge and H-bridge motor drive stages for vibration motors and small DC fans.
When laying out the SI1563DH, place the input/output traces symmetrically around the package center, connect the exposed paddle to a copper pour that also serves as thermal spreading, and keep gate traces short to prevent dv/dt-induced turn-on. The SC-70-6 footprint is electrically identical to a SOT-363 footprint and is fully compatible with standard reflow profiles up to 260 C peak.
Аналоги без доработки для SI1563DH-T1-E3 — тот же корпус, pin-to-pin совместимость. Компоненты в других корпусах, требующие переработки PCB, исключены.
Варианты в этой серии
Модели той же серии, совместимые без доработки с SI1563DH-T1-E3 (тот же форм-фактор и посадочное место) — отличается по Configuration, Drain-Source Voltage (VDS), Operating Temperature Range, Package, RoHS Status.
Инструмент быстрого сравнения — выберите альтернативные компоненты для сравнения бок о бок:
SI1563EDH-T1-E3
✅ Прямая замена📋 Справочный аналог (нет в каталоге)
SI1563DH-T1-GE3
✅ Прямая замена📋 Справочный аналог (нет в каталоге)
SI1563DH-T1-E3 Максимальные параметры и электрические характеристики
| Configuration | Complementary N/P-Channel MOSFET array |
| Drain-Source Voltage (VDS) | 20 V (N-channel and P-channel) |
| N-Channel Continuous Drain Current (ID) | 1.13 A |
| P-Channel Continuous Drain Current (ID) | 880 mA |
| Total Device Power Dissipation (PD) | 570 mW |
| Gate Threshold Type | Low-threshold (logic-level compatible) |
| Корпус | SC-70-6 (SOT-363), 6 pins |
| Тип монтажа | Surface Mount |
| Technology | TrenchFET (Vishay Gen III) |
| Polarity | N-channel + P-channel (complementary pair) |
| Диапазон рабочих температур | -55C to +150C (junction) |
| Lead-Free | Yes (per Vishay ordering info) |
| Без галогенов | Per ordering option Si1563DH-T1-GE3 |
| Статус RoHS | Compliant |
Конфигурация выводов SI1563DH-T1-E3
| Контакт 1 | G1 — Gate of N-channel MOSFET (Q1) |
| Контакт 2 | S1/D2 — Source of N-channel / Drain of P-channel |
| Контакт 3 | D1 — Drain of N-channel MOSFET (Q1) |
| Контакт 4 | D2 — Drain of P-channel MOSFET (Q2) |
| Контакт 5 | S2/D1 — Source of P-channel / Drain of N-channel |
| Контакт 6 | G2 — Gate of P-channel MOSFET (Q2) |
Типичное применение
SI1563DH-T1-E3 подходит для 6 применениеs: Portable/Battery Load Switch, Logic Level Shift / Signal Translation, H-Bridge / Small DC Motor Driver, Small-Signal Analog Switch / Multiplexer, LED Driver / Backlight Dimming, IoT Sensor Power Rail Multiplexer.
Portable/Battery Load Switch
The SI1563DH-T1-E3 is well suited as a battery load switch in single-cell Li-ion portable devices. The 20 V VDS rating provides ample headroom above the 4.2 V maximum Li-ion charge voltage, while the 1.13 A N-channel and 880 mA P-channel can each handle typical sub-1 W peripheral loads (radios, sensors, displays). The complementary pair enables a single IC to drive both high-side and low-side switching paths, simplifying the power mux topology. Gate threshold below 1.8 V allows direct MCU control without an additional gate driver, which is critical in space-constrained wearables.
Рекомендуется
Logic Level Shift / Signal Translation
The SI1563DH-T1-E3 functions as a compact bidirectional logic level shifter between 1.8 V MCUs and 3.3 V or 5 V peripherals. The N-channel serves as the high-side pull-down switch while the P-channel acts as the high-side pull-up, replicating the classic BSS138 plus BSS84 topology in a single 6-pin SC-70-6 package. This reduces board area by more than 60% versus two discrete SOT-23 parts and ensures matched on-resistance across both directions. Typical use cases include I2C, UART, and SPI level translation in IoT endpoints and wearables.
Рекомендуется
H-Bridge / Small DC Motor Driver
The SI1563DH-T1-E3's complementary N/P topology makes it a natural fit for half-bridge stages in small H-bridge motor driver circuits for vibration motors, micro fans, and tiny DC pumps. By using two SI1563DH devices, a full H-bridge is realized in just two SC-70-6 packages (12 pins total), which is far more compact than four discrete SOT-23 MOSFETs. The 1.13 A N-channel and 880 mA P-channel provide matched switching speeds for clean PWM operation at 20-50 kHz.
Рекомендуется
Small-Signal Analog Switch / Multiplexer
The SI1563DH-T1-E3 is frequently deployed in low-frequency analog signal multiplexing for audio signal routing, sensor channel selection, and test-mux circuits. The N+P complementary pair provides low on-resistance (typically under 1 ohm at VGS=4.5 V) in a bidirectional signal path, achieving -60 dB crosstalk at audio bandwidths. The SC-70-6 package allows placement directly adjacent to the MCU ADC or op-amp input, minimizing trace-induced noise.
Рекомендуется
LED Driver / Backlight Dimming
The SI1563DH-T1-E3 is used as a 20 V-tolerant PWM-controlled LED driver for small backlight strings and indicator LEDs in portable devices. The N-channel low-side switch can sink up to 1.13 A per LED string, sufficient for 100-200 mA class backlights. The P-channel can implement high-side PWM dimming for common-anode RGB indicators without requiring an additional charge pump or bootstrap circuit, simplifying the BOM and shrinking the PCB.
Рекомендуется
IoT Sensor Power Rail Multiplexer
The SI1563DH-T1-E3 powers up multiple low-power IoT sensors sequentially to reduce quiescent current in battery-powered sensor nodes. The N-channel switches the ground return while the P-channel switches the supply rail, allowing zero-leakage isolation of inactive sensor branches. Typical battery savings of 30-70% are achieved in multi-sensor designs for smart-home, environmental monitoring, and asset-tracking applications.
Рекомендуется
Сводка рекомендуемых товаров
Справочные инженерные данные для SI1563DH-T1-E3 — сравнение, рекомендации по проектированию и информация о соответствии.
Руководство по выбору
Сравнение с аналогами
| Параметр | Этот товар | SI1563EDH-T1-E3 | SI1563DH-T1-GE3 |
|---|---|---|---|
| Package | SC-70-6 (SOT-363) | SC-70-6 (SOT-363) - same | SC-70-6 (SOT-363) - same |
| Brand | Vishay Siliconix | Vishay Siliconix - same | Vishay Siliconix - same |
| Configuration | N/P complementary pair | N/P complementary pair - same | N/P complementary pair - same |
| Drain-Source Voltage | 20 V | 20 V | 20 V |
| N-Channel Continuous Drain Current | 1.13 A | 1.13 A | 1.13 A |
| P-Channel Continuous Drain Current | 880 mA | 880 mA | 880 mA |
| Total Power Dissipation | 570 mW | 570 mW | 570 mW |
| Halogen-Free | No (Pb-free only) | No (Pb-free only) | Yes (IEC 61249-2-21 compliant) |
| Lead-Free (RoHS) | Yes (-E3 suffix) | Yes (-E3 suffix) | Yes (-GE3 suffix) |
Ключевые отличия
- Only SC-70-6 dual complementary MOSFET from Vishay in this VDS/ID class (против SI1553DL-T1-E3)
- Integrated N+P pair eliminates matched-pair sourcing (против Discrete SOT-23 N+P MOSFET pair)
- Logic-level gate threshold compatible with 1.8 V MCUs (против Discrete 4.5 V VGS(th) MOSFET pairs)
Заметки по проектированию
Estimated: at maximum continuous drain current on the N-channel (1.13 A) with on-resistance of ~0.4 ohm and 20 V VDS, the SI1563DH-T1-E3 dissipates roughly 0.5 W under worst-case switching conditions. The SC-70-6 package is rated for 570 mW total device dissipation on a JEDEC 1-square-inch 2 oz copper test board. Keep both N- and P-channel conduction duty cycles under 50% in continuous operation, and stitch thermal vias under the SC-70-6 land pattern to a continuous ground pour so both internal transistors share the same thermal mass.
Route gate traces to pins 1 (G1) and 6 (G2) before placing any other signal trace; the high-impedance gates are vulnerable to dv/dt-induced turn-on if the trace length exceeds 5 mm. Place the input/output RC snubber within 3 mm of each drain pin when driving inductive loads such as small motors or relays. Keep the N-channel drain trace and P-channel source trace on opposite sides of the package so the internal body-diode current path does not cross sensitive analog signals.
Do not exceed the 20 V VDS rating on either transistor: even brief transients above 24 V can permanently shift the gate threshold. When using the SI1563DH as a level shifter, ensure that VGS does not exceed +/- 8 V at any point during hot-plug or ESD events; add a 100 kohm pull-down on the gate if the driving MCU pin is high-impedance during power-up. Avoid using both channels at full rated current simultaneously - the 570 mW package dissipation limit must be shared, so at 0.5 W per channel the die temperature would exceed the 150 C junction rating.
Информация о соответствии
RoHS compliant per -E3 suffix. Halogen-free variant available as SI1563DH-T1-GE3 per IEC 61249-2-21. Not qualified for automotive AEC-Q100.
