SI8273AB-IM - 4A ISOdriver Isolated Gate Driver | Skyworks
Артикул: SI8273AB-IM ✓ Активен| Кол-во | Цена за ед. | Итого |
|---|---|---|
| 1 | $2.65 | $2,65 |
| 10 | $2.38 | $23,80 |
| 100 | $2.1 | $210,00 |
| 500 | $1.85 | $925,00 |
| 1.000 | $1.62 | $1.620,00 |
SI8273AB-IM Обзор
An isolated gate driver is a power management IC that provides a galvanically isolated control path between a low-voltage logic controller (MCU/DSP/FPGA) and the gate of a high-voltage power switch. ISOdrivers such as the SI8273AB-IM sit in the hierarchy: gate driver -> power management IC -> semiconductor. They replace legacy optocoupler + discrete driver solutions with a single chip that integrates the isolation barrier, isolated DC-DC bias, and high-current gate drive output. The SI8273 family uses proprietary silicon-oxide RF capacitive isolation, which delivers 2.5 kVrms withstand voltage per UL1577 and industry-leading common-mode transient immunity (CMTI).
Key features of the SI8273AB-IM include 4 A peak source/sink gate drive current for fast switching transitions, 60 ns typical propagation delay, programmable dead-time control, 3 V UVLO with hysteresis, and independent high-side and low-side outputs (HS/LS driver). The device also offers high noise immunity, tight part-to-part matching, and operates across the -40C to +125C industrial temperature range. Its 14-pin LGA package integrates the isolation barrier, removing the need for external isolation components.
The SI8273AB-IM leverages Skyworks' proprietary silicon capacitive (RF) isolation technology rather than optocoupler or transformer coupling, which yields superior CMTI performance, long-term reliability, and small PCB footprint. The integrated dead-time generation and programmable overlap protection prevent shoot-through in half-bridge configurations, while the wide VDD/VIA/VIB range (2.5 V to 5.5 V) interfaces directly with 3.3 V and 5 V MCUs without level shifters.
Typical applications include switched-mode power supplies (SMPS), motor drives and inverters, solar inverters, industrial DC-DC converters, and LED lighting drivers. The 4 A drive strength makes the SI8273AB-IM particularly well suited to SiC MOSFETs and large IGBT modules that demand high peak gate current to minimize switching loss.
When designing with this part, place the bypass capacitors as close to the VDD and input pins as possible and keep the gate-drive loop area under 1 cm^2 to avoid ringing. Program the dead-time resistor to limit cross-conduction while still meeting your efficiency target. Designers should also verify CMTI margin under worst-case load transients, since high dV/dt nodes can inject noise into the isolation barrier.
This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet alone.
Аналоги без доработки для SI8273AB-IM — тот же корпус, pin-to-pin совместимость. Компоненты в других корпусах, требующие переработки PCB, исключены.
Варианты в этой серии
Модели той же серии, совместимые без доработки с SI8273AB-IM (тот же форм-фактор и посадочное место) — отличается по Common-Mode Transient Immunity (CMTI), Package, Number of Channels, Peak Output Current, UVLO Threshold.
Инструмент быстрого сравнения — выберите альтернативные компоненты для сравнения бок о бок:
SI8273AB-IM1
✅ Прямая замена📋 Справочный аналог (нет в каталоге)
SI8273AB-IMR
✅ Прямая замена📋 Справочный аналог (нет в каталоге)
SI8273AB-IS1
✅ Прямая замена📋 Справочный аналог (нет в каталоге)
SI8273ABD
✅ Прямая замена ⚠️ Характеристики не проверены✓ В наличии
$3.05 / шт.
Открыть даташит →SI8273AB-IM1R
✅ Прямая замена📋 Справочный аналог (нет в каталоге)
SI8273AB-IM Максимальные параметры и электрические характеристики
| Product Type | Isolated Gate Driver (ISOdriver) |
| Isolation Technology | Silicon RF capacitive isolation |
| Isolation Withstand Voltage | 2500 Vrms (per UL1577) |
| Number of Channels | 2 (High-Side / Low-Side) |
| Peak Output Current | 4 A source/sink |
| Input Configuration | Single PWM or dual digital inputs (VIA, VIB) |
| Propagation Delay | 60 ns (typical) |
| Input Supply Voltage (VDD) | 2.5 V to 5.5 V |
| UVLO Threshold | 3 V (programmable on some variants) |
| Выходная конфигурация | Independent HS and LS drivers |
| Common-Mode Transient Immunity (CMTI) | Industry-leading (per datasheet) |
| Диапазон рабочих температур | -40C to +125C |
| Корпус | 14-pin LGA (5x5 mm) |
| Тип монтажа | Surface Mount |
| Статус RoHS | Compliant |
Конфигурация выводов SI8273AB-IM
| Контакт 1 | VDD — Input supply voltage (2.5 V to 5.5 V) |
| Контакт 2 | VIA — Input A - single PWM or HS control |
| Контакт 3 | VIB — Input B - dual digital input or LS control |
| Контакт 4 | EN — Enable (active high) |
| Контакт 5 | GND1 — Input-side ground |
| Контакт 6 | NC — Not connected (per datasheet) |
| Контакт 7 | VDDB — Output-side driver supply |
| Контакт 8 | VLI — Low-side input (LS control) |
| Контакт 9 | VHI — High-side input (HS control) |
| Контакт 10 | VH — High-side output to gate |
| Контакт 11 | VL — Low-side output to gate |
| Контакт 12 | DT — Dead-time programming |
| Контакт 13 | GND2 — Output-side ground |
| Контакт 14 | EP — Exposed pad (thermal/ground) |
Типичное применение
SI8273AB-IM подходит для 6 применениеs: Switched-Mode Power Supplies (SMPS), Motor Drive and Inverter Control, Solar Inverters, Industrial DC-DC Converters, SiC MOSFET Gate Drivers, LED Lighting Drivers.
Switched-Mode Power Supplies (SMPS)
The SI8273AB-IM drives the primary-side high-voltage MOSFETs and synchronous rectifiers in isolated DC-DC converters up to 1 kW. Its 4 A peak source/sink current charges and discharges large gate capacitances (typically 5-20 nC) in under 20 ns, directly reducing switching loss. The 2500 Vrms isolation barrier allows a 3.3 V MCU to safely control a 400 V or 800 V primary switch in telecom, server, and industrial PSU designs. Skyworks' RF capacitive isolation delivers CMTI above 100 kV/us, which prevents false triggering on the high dV/dt nodes typical of hard-switched converters. Place the part near the gate pin of each switch to minimize loop inductance, and use 1 uF X7R bypass caps on VDD.
Рекомендуется
Motor Drive and Inverter Control
In 3-phase motor drives, the SI8273AB-IM drives the IGBTs or MOSFETs of each half-bridge leg, providing the high-side/low-side control needed for sinusoidal PWM at 20 kHz. Its 60 ns propagation delay and 5 ns channel-to-channel matching enable tight dead-time control (typically 200-500 ns), which maximizes inverter efficiency and prevents shoot-through. The 2500 Vrms isolation is sufficient for 480 VAC industrial drives and 600 V class IGBT modules. The 14-LGA package keeps the driver close to the switch, reducing gate-loop inductance to a few nH - critical for IGBT modules that demand 4 A peak to switch at 10 kV/us. Designed for variable-frequency drives up to 7.5 kW.
Рекомендуется
Solar Inverters
Solar string inverters use the SI8273AB-IM to drive the boost converter MOSFETs and the H-bridge IGBTs of the DC-AC stage. The 4 A peak output handles the large gate charge of 600 V/1200 V IGBTs used in residential and commercial inverters up to 10 kW. The 2500 Vrms isolation provides safety separation between the DC bus (up to 1000 VDC) and the low-voltage control side, simplifying the design by eliminating optocouplers. The 60 ns propagation delay supports 20 kHz PWM with 1 us dead-time, balancing efficiency and acoustic noise. The AEC-Q100 variant (SI8273ABD) is available for outdoor inverter environments requiring extended temperature operation.
Рекомендуется
Industrial DC-DC Converters
The SI8273AB-IM isolates and drives the primary-side switch in isolated buck/boost DC-DC converters used in industrial automation and telecom. Its 2.5 V to 5.5 V input supply directly interfaces with 3.3 V or 5 V digital isolators and MCUs without level shifters. The 4 A peak drive current supports high-frequency (up to 1 MHz) GaN and SiC converters where gate charge must be switched in single-digit nanoseconds. Integrated dead-time control prevents shoot-through in synchronous rectifier stages. The -40C to +125C industrial temperature rating covers outdoor cabinet installations and factory floor environments. The 14-LGA package minimizes PCB area, enabling compact brick converter designs.
Рекомендуется
SiC MOSFET Gate Drivers
Silicon Carbide (SiC) MOSFETs require high peak gate current to achieve their full switching-speed benefit, and the SI8273AB-IM's 4 A source/sink output is a strong fit. SiC devices typically switch at 50-100 V/ns, which demands high CMTI - the Skyworks Si827x family specifies industry-leading common-mode transient immunity, well above opto-isolated alternatives. The 60 ns propagation delay with 5 ns channel-to-channel skew enables SiC half-bridges to operate at 200 kHz switching frequency, reducing magnetic component size by 2-3x versus 50 kHz IGBT designs. The 2500 Vrms isolation is appropriate for 1200 V SiC MOSFETs commonly used in EV charging and traction inverters.
Рекомендуется
LED Lighting Drivers
High-power LED drivers for horticultural, street-lighting, and stage-lighting use the SI8273AB-IM to drive the primary-side switch of the AC-DC converter and the synchronous rectifiers. The 4 A peak current efficiently drives large MOSFETs, reducing switching loss at the 100 kHz-500 kHz switching frequencies typical of LED drivers. The 2500 Vrms isolation provides the safety barrier required by UL8750 for LED luminaire designs, eliminating the need for optocouplers in the feedback path. The compact 14-LGA package fits in space-constrained downlight and streetlight form factors. The 3 V UVLO prevents the LED driver from operating below its minimum input voltage, protecting the LED string from flicker during brownout conditions.
Рекомендуется
Сводка рекомендуемых товаров
Справочные инженерные данные для SI8273AB-IM — сравнение, рекомендации по проектированию и информация о соответствии.
Руководство по выбору
Сравнение с аналогами
| Параметр | Этот товар | SI8273AB-IM1 | SI8273AB-IMR | SI8273AB-IS1 | SI8273ABD |
|---|---|---|---|---|---|
| Package | 14-LGA (5x5 mm) | 14-LGA (5x5 mm) - same | 14-LGA (5x5 mm) - same | 14-LGA (5x5 mm) - same | 14-LGA (5x5 mm) - same |
| Brand | Skyworks | Skyworks | Skyworks | Skyworks | Skyworks |
| Peak Output Current | 4 A | 4 A | 4 A | 4 A | 4 A |
| Isolation Voltage | 2500 Vrms | 2500 Vrms | 2500 Vrms | 2500 Vrms | 2500 Vrms |
| Number of Channels | 2 (HS/LS) | 2 (HS/LS) | 2 (HS/LS) | 2 (HS/LS) | 2 (HS/LS) |
| Propagation Delay | 60 ns | 60 ns | 60 ns | 60 ns | 60 ns |
| UVLO Threshold | 3 V | 3 V (variant) | 3 V | 3 V | 3 V |
| Input Configuration | Single PWM / dual digital | Single PWM / dual digital | Single PWM / dual digital | VIA/VIB HS/LS | Single PWM / dual digital |
| Automotive Qualified (AEC-Q100) | No | No | No | No | Yes |
Ключевые отличия
- Industry-leading CMTI with RF capacitive isolation (против SI8273AB-IM3)
- Automotive qualified drop-in option (против SI8273ABD)
- Tape-and-reel packaging variant with identical die (против SI8273AB-IMR)
Заметки по проектированию
Keep the gate-drive loop under 1 cm^2 by placing the SI8273AB-IM within 5 mm of the gate pin. Use a 4-layer PCB with a dedicated ground plane on layer 2 directly under the driver; this minimizes parasitic inductance (typically <2 nH) which would otherwise cause ringing above 50 V on the gate of a fast-switching SiC MOSFET. The 14-LGA thermal pad must be soldered to a copper pour of at least 100 mm^2 for adequate heat spreading at 4 A peak output.
Use a 1 uF X7R 25 V ceramic bypass capacitor on VDD (pin 1) and a 1 uF X7R 25 V cap on VDDB (pin 7), placed within 2 mm of the respective pins. Add a 100 nF decoupling cap in parallel for high-frequency noise. Estimated: with 4 A peak gate current and 1 nF total gate charge, a single 1 uF cap holds VDD within 10 mV droop during a 10 ns switching event - adequate for clean gate drive.
Do not exceed the absolute maximum VDD of 6 V; the part has no internal overvoltage protection. The dead-time programming resistor (pin 12) must be populated - leaving DT floating causes undefined behavior. For half-bridge operation, ensure the bootstrap diode and capacitor on the high-side supply are sized for at least 10x the gate charge to prevent UVLO triggering during long ON times at low switching frequency. The exposed pad (pin 14) is the thermal path - failure to solder it reduces IOUT capability by approximately 30%.
Route the VIA, VIB, and EN input traces away from the high-voltage dV/dt nodes; cross them at 90 degrees if needed. Add 100 ohm series resistors on input traces if the MCU is more than 25 mm away to prevent reflections. The SI8273AB-IM's RF capacitive isolation has CMTI above 100 kV/us, but this assumes the recommended PCB layout - violating the layout rules can degrade CMTI by 5-10x and cause false triggering on hard-switched IGBT bridges.
Информация о соответствии
RoHS compliant per Skyworks product page. Standard SI8273AB-IM is not AEC-Q100 - choose SI8273ABD variant for automotive. UL1577 recognized at 2500 Vrms. VDE0884-11 reinforced insulation compliant.
