STW45NM60 - 600V 45A MDmesh Power MOSFET | STMicroelectronics
Артикул: STW45NM60 ✓ Активен| Кол-во | Цена за ед. | Итого |
|---|---|---|
| 1 | $8.42 | $8,42 |
| 10 | $7.51 | $75,10 |
| 100 | $6.34 | $634,00 |
| 500 | $5.42 | $2.710,00 |
| 1.000 | $4.78 | $4.780,00 |
STW45NM60 Обзор
A Power MOSFET is a voltage-controlled semiconductor switch used to efficiently switch and conduct current in power-conversion circuits. N-channel MOSFETs are the most common type due to their lower on-resistance per unit area compared to P-channel counterparts. The MDmesh family sits within STMicroelectronics' high-voltage MOSFET hierarchy (MDmesh -> PowerMESH -> Power MOSFET -> discrete semiconductor), targeting switched-mode power supply (SMPS) primary-side switches, motor-control inverters, and uninterruptible power supply (UPS) stages.
Key features include a 600 V drain-source breakdown voltage rating, 90 mΩ typical Rds(on) at Vgs=10 V, and an outstanding dv/dt capability plus excellent avalanche ruggedness. The strip-based process yields overall dynamic performance that is significantly better than competing similar products. The TO-247 package provides high thermal-mass dissipation needed at 45 A continuous operation.
Typical applications include high-power switched-mode power supply (SMPS) primary switches, three-phase inverter bridges for motor drives, induction heating, welding converters, photovoltaic string inverters, and uninterruptible power supply (UPS) front-end PFC and bridge stages. The 600 V rating provides ample headroom above 400 V PFC bus rails.
When designing with this device, gate-drive voltage must reach 10 V for full enhancement to achieve the lowest Rds(on). At full 45 A load, ensure heatsink thermal resistance keeps Tj below 150 °C, and gate-source protection with a Zener clamp is recommended in motor-control environments where dv/dt stresses are severe. This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet.
Аналоги без доработки для STW45NM60 — тот же корпус, pin-to-pin совместимость. Компоненты в других корпусах, требующие переработки PCB, исключены.
Варианты в этой серии
Модели той же серии, совместимые без доработки с STW45NM60 (тот же форм-фактор и посадочное место) — отличается по Operating Temperature Range, Technology, dv/dt Capability.
Инструмент быстрого сравнения — выберите альтернативные компоненты для сравнения бок о бок:
STW45NM60D
✅ Прямая замена📋 Справочный аналог (нет в каталоге)
STW30NM60N
✅ Прямая замена📋 Справочный аналог (нет в каталоге)
IRFP450
✅ Прямая замена📋 Справочный аналог (нет в каталоге)
STW45NM60 Максимальные параметры и электрические характеристики
| Technology | MDmesh Power MOSFET |
| Drain-Source Voltage (Vdss) | 600 V |
| Continuous Drain Current (Id) at Tc=25°C | 45 A |
| Typical Rds(on) at Vgs=10V | 90 mΩ |
| Typical Rds(on) at Vgs=4.5V | 110 mΩ |
| Maximum Power Dissipation (Pd) at Tc=25°C | 417 W |
| Диапазон рабочих температур | -65 °C to +150 °C (junction) |
| Корпус | TO-247-3 (through-hole) |
| Тип монтажа | Through Hole |
| Channel Type | N-Channel |
| Configuration | Single FET |
| dv/dt Capability | Outstanding (MDmesh process) |
| Avalanche Ruggedness | Excellent |
| Статус RoHS | Compliant |
| Lead-Free | Yes |
Конфигурация выводов STW45NM60
| Контакт 1 | Gate — Gate control input (drives Vgs) |
| Контакт 2 | Drain — Power drain terminal (tab is internally connected to pin 2) |
| Контакт 3 | Source — Source terminal / power return |
Область безопасной работы (DC, continuous)
Типичное применение
STW45NM60 подходит для 6 применениеs: Switched-Mode Power Supply Primary Switch, Three-Phase Motor Drive Inverter, Induction Heating and Welding Converters, Photovoltaic String Inverters, Uninterruptible Power Supply Front-End, Server and Telecom Power Converters.
Switched-Mode Power Supply Primary Switch
The STW45NM60 serves as the main primary-side switch in 1-3 kW switched-mode power supplies (SMPS) operating from 220-240 V AC mains. With 600 V Vdss and 45 A continuous Id rating, it handles rectified 311 V DC bus rails with ample transient margin. The 90 mΩ typical Rds(on) at Vgs=10 V keeps conduction losses below 30 W at full load, while the MDmesh process delivers outstanding dv/dt capability critical for high-frequency PFC and LLC converter stages. Compared to IGBT alternatives, it switches faster and has no tail current, enabling higher efficiency and smaller magnetics. The TO-247 package provides the thermal mass for sustained 45 A operation with standard heatsinking.
Рекомендуется
Three-Phase Motor Drive Inverter
In three-phase variable-frequency drives for industrial motors, the STW45NM60 operates as a 600 V / 45 A switch in the inverter bridge, switching DC bus rails up to 480 V rectified mains. Its 90 mΩ Rds(on) minimizes conduction losses across the 50/60 Hz PWM cycle, while the excellent dv/dt capability and avalanche ruggedness handle the harsh inductive switching environment of motor windings. Engineers typically pair the STW45NM60 with a gate driver like the STMicroelectronics L6382 or IR2110 for bootstrap high-side drive, and add a TVS Zener from gate-to-source for dv/dt protection. The TO-247 footprint allows straightforward heatsink mounting for 10-20 kW drives.
Рекомендуется
Induction Heating and Welding Converters
Resonant induction-heating and welding converters demand high-current switching at 600 V class. The STW45NM60 delivers 45 A continuous drain current with 417 W power dissipation capability, enabling 5-10 kW heating-coil driver designs. Its MDmesh technology provides the low on-resistance needed for sustained high-current operation, while excellent avalanche ruggedness absorbs the energy reflected from the resonant tank during zero-voltage-switching transitions. In welding applications, the device's high peak current handling supports arc-ignition surges. The TO-247 package's high thermal mass handles the localized heating bursts typical of these applications.
Рекомендуется
Photovoltaic String Inverters
Solar string inverters operating at 600-1000 V DC input ranges use the STW45NM60 as the primary-side switch in boost PFC and full-bridge converter stages. The 600 V Vdss provides headroom over typical 400-500 V PV string maximums, while 45 A continuous current supports 10-15 kW inverter power levels. The 90 mΩ Rds(on) translates to <1% conduction loss at full load, critical for achieving >98% CEC-weighted inverter efficiency. Combined with its MDmesh dynamic performance, the device enables higher switching frequencies that shrink passive component sizes and reduce overall system BOM cost. RoHS compliance meets residential and commercial PV installation requirements.
Рекомендуется
Uninterruptible Power Supply Front-End
Online UPS systems rated 5-20 kVA use the STW45NM60 in the front-end PFC rectifier and inverter bridge stages. The 600 V Vdss handles the 380-400 V DC bus with margin for transient overshoots, and the 45 A continuous rating supports high-power-density converter designs. Its low Rds(on) of 90 mΩ minimizes losses during continuous online operation, directly improving UPS efficiency and reducing battery drain during line-loss events. The MDmesh process provides reliable avalanche absorption for the inductive kickback that occurs during load-step transients when the inverter switches from grid to battery mode.
Рекомендуется
Server and Telecom Power Converters
High-density server and telecom power supplies operating from 48 V or -48 V battery rails use the STW45NM60 in DC-DC converter primary stages that step up to intermediate bus voltages. The 45 A continuous current capability supports 1-2 kW converter modules typically deployed in rack-mounted equipment. The TO-247 through-hole package enables straightforward integration with PCB-mounted heatsinks or cold-plate cooling systems common in server PSUs. Engineers pair the STW45NM60 with synchronous rectification MOSFETs on the secondary side to achieve >94% peak efficiency required by 80 Plus Titanium standards in datacenter applications.
Рекомендуется
Сводка рекомендуемых товаров
Справочные инженерные данные для STW45NM60 — сравнение, рекомендации по проектированию и информация о соответствии.
Руководство по выбору
Сравнение с аналогами
| Параметр | Этот товар | STW45NM60D | STW30NM60N | IRFP450 |
|---|---|---|---|---|
| Package | TO-247-3 | TO-247-3 - same | TO-247-3 - same | TO-247-3 - same |
| Brand | STMicroelectronics | STMicroelectronics | STMicroelectronics | Infineon Technologies |
| Drain-Source Voltage (Vdss) | 600 V | 600 V | 600 V | 500 V (-17%) |
| Continuous Drain Current (Id) | 45 A | 45 A | 30 A (-33%) | 14 A (-69%) |
| Built-in Diode | No (standard body diode) | Yes (internal fast diode) | No | No |
| Technology | MDmesh | MDmesh | MDmesh N-channel | Planar HEXFET |
Ключевые отличия
- Highest current rating in the STW45NM60 family at 600 V (против STW30NM60N)
- Modern MDmesh process versus planar technology (против IRFP450)
- Optional internal diode variant for bridge topologies (против STW45NM60D)
Заметки по проектированию
Estimated: at Vds=311 V rectified mains, Id=20 A continuous, and Rds(on)=0.090 Ω, conduction loss is approximately 36 W. With TO-247 thermal resistance (θJA) of ~30 °C/W on a typical 1 °C/W heatsink, junction temperature rises ≈66 °C above ambient. Sustained 45 A operation requires either forced-air cooling or a heatsink rated below 0.5 °C/W to keep Tj below 150 °C. Verify with the datasheet thermal curve at the actual duty cycle.
Do not exceed the maximum gate-source voltage rating — typical MDmesh MOSFETs require a 10-12 V drive and a Zener clamp (e.g. 15 V) gate-to-source to prevent dv/dt-induced false turn-on in half-bridge circuits. At turn-off, ensure the gate-driver pull-down resistance is below 10 Ω to avoid parasitic turn-on in motor-drive and PFC applications. Without these protections, shoot-through or avalanche failures can occur.
Use a Kelvin-source connection when possible: route the gate-driver return to the source pin (pin 3) rather than the power-ground path, which prevents the source-inductance voltage drop from causing gate-drive ringing. Keep the gate-loop trace area minimal to reduce parasitic inductance. Place the gate-driver within 25 mm of the MOSFET pins to minimize loop area and ringing during high-dv/dt switching events typical of MDmesh devices.
Информация о соответствии
RoHS compliant per STMicroelectronics product page. Through-hole TO-247 package, not AEC-Q100 qualified for automotive applications. Refer to datasheet for full material declaration.
