UCC27517ADBVT - 4A/4A Single Low-Side Gate Driver | TI
Артикул: UCC27517ADBVT ✓ Активен| Кол-во | Цена за ед. | Итого |
|---|---|---|
| 1 | $1.42 | $1,42 |
| 10 | $1.18 | $11,80 |
| 100 | $0.95 | $95,00 |
| 500 | $0.78 | $390,00 |
| 1.000 | $0.66 | $660,00 |
| 3.000 | $0.55 | $1.650,00 |
UCC27517ADBVT Обзор
A gate driver is a power-management IC that sits between a low-power controller (MCU, FPGA, analog PWM) and a high-power switching device (MOSFET, IGBT, GaN FET). Its job is to translate a logic-level command into a high-current drive signal that can rapidly charge and discharge the gate capacitance of the power switch. Within the broader hierarchy, the UCC27517ADBVT belongs to the gate-driver IC family, which sits under power management -> MOSFET/IGBT drivers -> low-side drivers -> single-channel drivers. Low-side drivers are the simplest and most common configuration; they switch the low-side FET in a half-bridge or a single-switch power topology.
Key features of the UCC27517ADBVT include TTL/CMOS-compatible logic inputs that are independent of VDD, 13 ns typical propagation delay, 9 ns rise and 8 ns fall times into a 1 nF load, and a dual-input structure with one inverting and one non-inverting input (INA, INB) that can be tied together for a single-input configuration. The device is rated for operation across -40 C to +125 C and is qualified to 4 kV HBM ESD.
Architecturally, the UCC27517ADBVT uses a paralleled output stage that sources and sinks high peak currents, holding shoot-through current low by design. The wide hysteresis between the high and low input thresholds gives excellent noise immunity, and the fixed (VDD-independent) input thresholds allow the same logic family to drive the gate from a controller powered by a different rail.
Typical applications include driving MOSFETs and IGBTs in switch-mode power supplies, motor drive H-bridge low-side switches, Class-D audio amplifier output stages, and synchronous-rectifier FETs in DC-DC converters. Designers often choose this part when they need a compact, robust low-side driver that replaces discrete NPN/PNP totem-pole circuits.
When designing with this part, place a 0.1 uF VDD bypass capacitor as close to pin 5 as possible and use a wider trace (>=20 mil) on the OUT pin to handle the 4 A peak pulses. Because the device can handle negative inputs, no extra input-protection diodes are needed in most bridge applications.
Аналоги без доработки для UCC27517ADBVT — тот же корпус, pin-to-pin совместимость. Компоненты в других корпусах, требующие переработки PCB, исключены.
Инструмент быстрого сравнения — выберите альтернативные компоненты для сравнения бок о бок:
UCC27517DBVT
✅ Прямая замена📋 Справочный аналог (нет в каталоге)
UCC27517ADBVR
✅ Прямая замена📋 Справочный аналог (нет в каталоге)
UCC27518AQDBVRQ1
✅ Прямая замена📋 Справочный аналог (нет в каталоге)
UCC27519DBVR
✅ Прямая замена📋 Справочный аналог (нет в каталоге)
UCC27537DBVR
✅ Прямая замена📋 Справочный аналог (нет в каталоге)
UCC27517ADBVT Максимальные параметры и электрические характеристики
| Number of Channels | 1 |
| Driver Configuration | Low-Side, Inverting / Non-Inverting |
| Peak Source Current | 4 A |
| Peak Sink Current | 4 A |
| Supply Voltage (VDD) | 4.5 V to 18 V |
| Undervoltage Lockout (UVLO) | 5 V (typ) |
| Input Voltage Capability | -5 V (negative handling on IN pins) |
| Input Logic Compatibility | TTL / CMOS (VDD-independent thresholds) |
| Propagation Delay (typ) | 13 ns |
| Rise Time (1 nF load, typ) | 9 ns |
| Fall Time (1 nF load, typ) | 8 ns |
| Диапазон рабочих температур | -40 C to +125 C |
| ESD Rating (HBM) | 4 kV |
| Корпус | SOT-23-5 (DBV) |
| Тип монтажа | Surface Mount |
| Статус RoHS | Compliant |
Конфигурация выводов UCC27517ADBVT
| Контакт 1 | INA — Logic input A, non-inverting (TTL/CMOS, VDD-independent) |
| Контакт 2 | INB — Logic input B, inverting (TTL/CMOS, VDD-independent) |
| Контакт 3 | GND — Ground reference for input and output |
| Контакт 4 | OUT — Gate drive output to MOSFET/IGBT gate |
| Контакт 5 | VDD — Supply voltage input, 4.5 V to 18 V |
Типичное применение
UCC27517ADBVT подходит для 6 применениеs: Switch-Mode Power Supply (SMPS) Low-Side Drive, BLDC Motor Drive Low-Side FET Driver, Class-D Audio Amplifier Output Stage, Synchronous Rectifier Driver in DC-DC Converters, Solar Inverter Power Stage, GaN FET Half-Bridge Driver.
Switch-Mode Power Supply (SMPS) Low-Side Drive
The UCC27517ADBVT drives the low-side MOSFET in isolated and non-isolated SMPS topologies such as flyback, forward, and active-clamp converters. Its 4 A peak source/sink current quickly charges and discharges the gate capacitance of typical 30-100 nC MOSFETs, minimising switching losses at 100 kHz to 1 MHz switching frequencies. The 5 V UVLO and TTL/CMOS inputs independent of VDD simplify start-up sequencing in multi-rail converters. Designers pair this part with companion PWM controllers such as the TI UCC28C42 to build compact, high-efficiency AC-DC and DC-DC supplies for industrial and consumer applications.
Рекомендуется
BLDC Motor Drive Low-Side FET Driver
In three-phase brushless DC motor drives, the UCC27517ADBVT drives the low-side IGBT or MOSFET in each phase leg of the inverter. The 4 A peak drive current supports IGBT modules up to 50 A, while the -5 V negative-input tolerance handles the Miller-induced negative transients on the gate during hard switching. Combined with a high-side bootstrap driver and a DSP or MCU controller, this part enables compact, robust motor-control inverters for industrial automation, e-bikes, and small appliances. Typical companion parts include TI C2000 microcontrollers for sensorless FOC control.
Рекомендуется
Class-D Audio Amplifier Output Stage
The UCC27517ADBVT drives the output MOSFETs in Class-D audio amplifiers where fast switching and low dead-time are critical for high audio fidelity. Its 9 ns rise and 8 ns fall times minimise crossover distortion, while the 4 A drive capability supports the high gate charge of large audio MOSFETs. Combined with a modulator IC and output LC filter, this gate driver enables high-efficiency, audiophile-grade Class-D amplifiers for home theatre and professional audio. The small SOT-23-5 footprint also supports compact designs such as soundbars and portable speakers.
Рекомендуется
Synchronous Rectifier Driver in DC-DC Converters
Synchronous-rectifier FETs in buck and forward converters need precise, low-delay gate drive to replace lossy Schottky diodes. The UCC27517ADBVT's 13 ns propagation delay and 4 A sink capability switch the synchronous FET efficiently, improving overall converter efficiency by 2-5%. The fixed TTL/CMOS input thresholds decouple drive logic from the converter's bias rail, simplifying start-up sequencing. This part pairs well with buck controllers such as TI TPS54560 for 12 V to 3.3 V/1.8 V POL conversion in telecom and industrial equipment.
Рекомендуется
Solar Inverter Power Stage
In photovoltaic string inverters, the UCC27517ADBVT drives the low-side IGBTs in the H-bridge inverter stage that converts DC solar panel voltage to AC mains voltage. The 18 V VDD rating and -5 V negative-input tolerance handle the harsh electrical environment of solar installations with substantial EMI. Combined with a digital signal controller, current sensors, and gate-drive isolation, this part supports grid-tied inverter designs from 1 kW to 10 kW residential systems. Its wide -40 C to +125 C operating range also suits outdoor inverter enclosures.
Рекомендуется
GaN FET Half-Bridge Driver
GaN FETs switch 5-10x faster than silicon MOSFETs, requiring gate drivers with sub-10 ns propagation. The UCC27517ADBVT's 13 ns delay and 4 A drive strength make it suitable for low-side GaN FETs in telecom and server DC-DC converters where efficiency exceeds 96%. The -5 V negative-input capability protects the driver against Miller-induced negative transients from fast GaN switching edges. Designers often pair it with a high-side GaN driver and a digital controller to build high-density 48 V to point-of-load converters.
Рекомендуется
Сводка рекомендуемых товаров
Справочные инженерные данные для UCC27517ADBVT — сравнение, рекомендации по проектированию и информация о соответствии.
Руководство по выбору
Сравнение с аналогами
| Параметр | Этот товар | UCC27517DBVT | UCC27517ADBVR | UCC27518AQDBVRQ1 | UCC27519DBVR | UCC27537DBVR |
|---|---|---|---|---|---|---|
| Package | SOT-23-5 (DBV) | SOT-23-5 (DBV) - same | SOT-23-5 (DBV) - same | SOT-23-5 (DBV) - same | SOT-23-5 (DBV) - same | SOT-23-5 (DBV) - same |
| Brand | Texas Instruments | Texas Instruments | Texas Instruments | Texas Instruments | Texas Instruments | Texas Instruments |
| Peak Source/Sink Current | 4 A / 4 A | 4 A / 4 A | 4 A / 4 A | 4 A / 4 A | 4 A / 4 A | 4 A / 4 A |
| VDD Supply Range | 4.5 V to 18 V | 4.5 V to 18 V | 4.5 V to 18 V | 4.5 V to 18 V | 4.5 V to 18 V | 4.5 V to 18 V |
| Negative Input Handling | -5 V | No | -5 V | -5 V | Limited | Limited |
| Automotive Qualified (AEC-Q100) | No | No | No | Yes (AEC-Q100) | No | No |
| Logic Inputs | Dual (INA non-inv + INB inv) | Dual (INA + INB) | Dual (INA + INB) | Dual | Single non-inverting | Dual with enable |
Ключевые отличия
- Negative input voltage handling to -5 V (против UCC27517DBVT)
- AEC-Q100 automotive-qualified option in same footprint (против UCC27518AQDBVRQ1)
- 5 V UVLO for 5 V logic-rail systems (против UCC27517DBVT (4 V UVLO))
- Dual-input (inverting + non-inverting) flexible logic (против UCC27519DBVR (single non-inverting))
Заметки по проектированию
Place a 0.1 uF low-ESR ceramic bypass capacitor as close as possible to the VDD pin (pin 5) and a 1 uF bulk capacitor on the same supply trace. Use a wide, short trace (>=20 mil) from the OUT pin (pin 4) to the MOSFET gate to handle 4 A peak pulses without inductive ringing. Keep the OUT trace length under 25 mm to limit parasitic inductance that can cause gate-voltage overshoot.
At continuous 4 A peak drive and 1 MHz switching into a 1 nF load, estimated gate-drive power dissipation is approximately (Vg*Qg*f) = 12 V * 30 nC * 1 MHz = 0.36 W. The SOT-23-5 package has theta_JA around 200 C/W on a standard 1-oz 4-layer board, producing a 72 C temperature rise. Use a copper pour under the thermal pad-style centre lead to reduce theta_JA to ~150 C/W. Add a gate resistor (typically 2-10 ohm) to limit peak current and reduce EMI.
Do not exceed 18 V on VDD or drive VDD below 4.5 V without considering the 5 V UVLO. The UCC27517ADBVT inputs tolerate -5 V, but Voltages more negative than -5 V can damage the input stage. When using a bootstrap supply, ensure the bootstrap capacitor is large enough to supply the gate charge without the high-side rail sagging below UVLO. Always check that the dead-time in the controller is greater than the driver's propagation delay to prevent shoot-through.
Estimated: at 4 A drive into a 1 nF gate capacitance with parasitic trace inductance of 10 nH, peak overshoot on the OUT pin can reach 30% above VDD. Add a small ferrite bead or 2-10 ohm series gate resistor to dampen this ringing. Keep the gate-loop area (driver OUT to MOSFET gate back to driver GND) as small as possible - this loop is the primary source of EMI in switching converters.
Информация о соответствии
RoHS compliant per TI product page. Not AEC-Q100 qualified - choose UCC27518AQDBVRQ1 for automotive-grade applications.
