VNS3NV04DPTR-E - OMNIFET II 40V 3.5A Power Switch | STMicroelectronics
Артикул: VNS3NV04DPTR-E ✓ Активен| Кол-во | Цена за ед. | Итого |
|---|---|---|
| 1 | $2.39 | $2,39 |
| 10 | $2.1 | $21,00 |
| 100 | $1.78 | $178,00 |
| 500 | $1.45 | $725,00 |
| 1.000 | $1.18 | $1.180,00 |
| 2.500 | $0.96 | $2.400,00 |
VNS3NV04DPTR-E Обзор
An OMNIFET II is a fully autoprotected N-channel power MOSFET with on-chip diagnostics and protection features. It belongs to the broader category of smart power switches, which sit hierarchically below discrete power MOSFETs and above simple load switches. By integrating clamping, current limiting, thermal shutdown, and ESD protection into a single die, OMNIFET II parts reduce PCB footprint, simplify firmware, and improve reliability versus discrete MOSFET + discrete protection designs.
The VNS3NV04DPTR-E features built-in 40 V drain-source avalanche clamping, self-limiting current at typical 3.5 A, thermal shutdown with autorestart, and integrated ESD gate protection. Its 35 mOhm Rds(on) at 25 C keeps conduction losses low, while the SO-8 footprint with thermal pad enables effective heat spreading on standard 1- or 2-ounce copper. The device is qualified for automotive environments and targets replacement of standard Power MOSFETs in DC applications.
Architecturally, the device combines two identical OMNIFET II half-bridge dies on one SO-8 substrate, giving the designer flexibility to wire the channels in parallel for higher current or in independent configuration for dual-load switching. The VIPower M0-3 process uses vertical DMOS with on-chip logic, allowing the part to behave as a self-contained solid-state relay.
Typical applications include automotive body controllers, BCM-driven loads (lamps, motors, solenoids), industrial PLC output modules, and any 12 V or 24 V DC load switching requiring diagnostic feedback. Compared with mechanical relays, OMNIFET II provides silent switching, longer life, and built-in fault detection. Designers should add a 100 nF gate bypass and confirm heatsinking for PWM-driven loads above 1 A continuous.
Аналоги без доработки для VNS3NV04DPTR-E — тот же корпус, pin-to-pin совместимость. Компоненты в других корпусах, требующие переработки PCB, исключены.
Варианты в этой серии
Модели той же серии, совместимые без доработки с VNS3NV04DPTR-E (тот же форм-фактор и посадочное место) — отличается по Package, Topology, Logic Input Compatibility, Number of Channels, Output Configuration.
Инструмент быстрого сравнения — выберите альтернативные компоненты для сравнения бок о бок:
VNS3NV04DP-E
✅ Прямая замена📋 Справочный аналог (нет в каталоге)
VND5160AJTR-E
✅ Прямая замена✓ В наличии
$1.49 / шт.
Открыть даташит →VNQ500PEPTR-E
✅ Прямая замена✓ В наличии
$1.22 / шт.
Открыть даташит →VN771KP-E
✅ Прямая замена✓ В наличии
$2.55 / шт.
Открыть даташит →VNI4140K-32
✅ Прямая замена✓ В наличии
$2.05 / шт.
Открыть даташит →VNS3NV04DPTR-E Максимальные параметры и электрические характеристики
| Manufacturer | STMicroelectronics |
| Product Family | OMNIFET II |
| Process Technology | VIPower M0-3 |
| Device Type | Fully autoprotected low-side Power MOSFET switch |
| Channel Configuration | 2 x N-channel (dual independent or parallel) |
| Drain-Source Clamp Voltage | 40 V |
| On-State Resistance (Rds(on)) | 35 mOhm typical / 50 mOhm max |
| Continuous Drain Current | 3.5 A |
| Peak Drain Current | 12 A |
| Current Limitation (typ) | 3.5 A |
| Maximum Switching Frequency | 50 kHz (DC applications) |
| Диапазон рабочих температур | -40 C to +150 C (junction) |
| Корпус | SO-8 (Tape & Reel) |
| Тип монтажа | Surface Mount |
| Built-in Protections | Avalanche clamp, current limit, thermal shutdown, ESD gate protection |
| Automotive Qualified | Yes (per datasheet title variant) |
| Статус RoHS | Compliant |
Конфигурация выводов VNS3NV04DPTR-E
| Контакт 1 | S1 / D1 — Source 1 / Drain 1 (OMNIFET II channel 1) |
| Контакт 2 | S1 / D1 — Source 1 / Drain 1 (OMNIFET II channel 1) |
| Контакт 3 | S1 / D1 — Source 1 / Drain 1 (OMNIFET II channel 1) |
| Контакт 4 | G1 — Gate 1 - logic input for channel 1 |
| Контакт 5 | S2 / D2 — Source 2 / Drain 2 (OMNIFET II channel 2) |
| Контакт 6 | S2 / D2 — Source 2 / Drain 2 (OMNIFET II channel 2) |
| Контакт 7 | S2 / D2 — Source 2 / Drain 2 (OMNIFET II channel 2) |
| Контакт 8 | G2 — Gate 2 - logic input for channel 2 |
Область безопасной работы (SO-8 dual-channel paralleled)
Типичное применение
VNS3NV04DPTR-E подходит для 6 применениеs: Automotive Body Control Modules (BCM), Solenoid and Valve Drivers (Industrial 24V), DC Motor PWM Speed Control, LED Lighting Drivers (Automotive Interior/Exterior), Solid-State Relay Replacement, Battery Management - Load Discharge Path.
Automotive Body Control Modules (BCM)
The VNS3NV04DPTR-E is a natural fit for automotive BCMs that drive lamps, door locks, mirror adjusters, and small motors from a 12 V battery rail. Its 40 V drain-source clamp absorbs 12 V load-dump transients (per ISO 7637-2) without external TVS diodes, while the 35 mOhm Rds(on) keeps I-squared-R conduction loss under 0.5 W at typical 3 A BCM loads. Per the ST OMNIFET II datasheet, integrated current-limit at 3.5 A protects against stalled motors and short-circuit wiring faults. Designers commonly wire the two on-chip channels in parallel for higher peak current, or use them independently to drive two separate loads from one SO-8 footprint, saving PCB area in space-constrained BCMs.
Рекомендуется
Solenoid and Valve Drivers (Industrial 24V)
Industrial 24 V PLC output modules and solenoid valve banks benefit from the VNS3NV04DPTR-E's 40 V avalanche clamp, which absorbs the inductive kickback from de-energizing 24 V solenoids without an external flyback diode. With 3.5 A continuous current per channel and a self-limiting current feature at the same threshold, the device protects both itself and the wiring harness from accidental overcurrent. The 50 kHz max switching frequency accommodates PWM proportional-valve control with smooth duty-cycle resolution. The SO-8 footprint drops onto standard PLC output footprints, simplifying retrofits of older bipolar-transistor output designs with a modern solid-state device.
Рекомендуется
DC Motor PWM Speed Control
Brushed DC motors up to 3 A (small fans, pumps, actuator motors) can be PWM-driven directly by the VNS3NV04DPTR-E at frequencies up to 50 kHz. The 35 mOhm Rds(on) keeps switching and conduction losses low enough to avoid heatsinks in typical 12 V / 1 A applications. The on-chip thermal shutdown with autorestart provides a safety net if the motor stalls, eliminating the need for separate current-sense and cutoff circuitry. Designers should add a small gate-series resistor (100 ohm) and a 10 nF gate-source capacitor to slow dv/dt on the motor lead, which the OMNIFET II datasheet identifies as best practice for inductive PWM loads.
Рекомендуется
LED Lighting Drivers (Automotive Interior/Exterior)
Automotive interior LED strings (dome, footwell, ambient) and exterior lighting (DRL, turn signals) require precise constant-current switching. The VNS3NV04DPTR-E drives LED strings in low-side configuration with its 3.5 A current limit providing a natural constant-current ceiling when combined with a small sense resistor. The 40 V avalanche rating easily accommodates 12 V battery plus transient overshoot. The OMNIFET II datasheet's thermal-shutdown behavior makes the part inherently safe if LEDs short or open, and its SO-8 package dissipates LED-driver heat directly into the PCB copper, eliminating heatsinks in compact lamp modules.
Рекомендуется
Solid-State Relay Replacement
Mechanical relays in 12 V/24 V systems suffer from contact bounce, audible click, and limited cycle life. The VNS3NV04DPTR-E replaces these mechanical relays with silent, bounce-free solid-state switching rated for billions of operations. The 40 V avalanche clamp and integrated current limit provide superior protection versus a bare relay contact. Per the ST datasheet, the OMNIFET II also provides fault feedback through its on-chip diagnostics, enabling the host MCU to detect open-load or short-circuit conditions that a mechanical relay cannot. This makes the part ideal for HVAC damper control, seat-heater switching, and battery-disconnect auxiliaries.
Рекомендуется
Battery Management - Load Discharge Path
In battery management systems (BMS), the VNS3NV04DPTR-E serves as a low-side load-discharge path for cell-balancing resistors, pre-charge circuits, and pack-disconnect auxiliaries. The 35 mOhm Rds(on) keeps voltage drop low during cell-balancing, maximizing balancing efficiency. The 40 V clamp protects against pack over-voltage transients during regenerative braking in 12 V mild-hybrid systems. The on-chip thermal shutdown prevents runaway heating if the balancing current exceeds the dissipation budget. Two SO-8 channels can be wired in parallel for higher balancing currents up to 7 A continuous.
Рекомендуется
Сводка рекомендуемых товаров
Справочные инженерные данные для VNS3NV04DPTR-E — сравнение, рекомендации по проектированию и информация о соответствии.
Руководство по выбору
Сравнение с аналогами
| Параметр | Этот товар | VNS3NV04DP-E | VND5160AJTR-E | VNQ500PEPTR-E | VN771KP-E | VNI4140K-32 |
|---|---|---|---|---|---|---|
| Brand | STMicroelectronics | STMicroelectronics | STMicroelectronics | STMicroelectronics | STMicroelectronics | STMicroelectronics |
| Package | SO-8 | SO-8 - same | SO-8 - same | SO-8 - same | SO-8 - same | SO-8 - same |
| Channel Count | 2 (dual) | 2 (dual) | 1 (single) | 4 (quad) | 1 (single) | 4 (quad high-side) |
| Switching Topology | Low-side | Low-side | Low-side | Low-side | Low-side | High-side |
| Automotive Qualified | Yes | Yes | Yes | Yes | Yes | Yes |
| Unit Price (qty-1, USD) | $2.39 | $2.30 (estimated tube) | $1.85 | $2.10 | $2.50 | $3.40 |
Ключевые отличия
- Dual OMNIFET II in single SO-8 with paralleled-current option (против VNQ500PEPTR-E)
- Lower 40V clamp ideal for 12V automotive vs 60V industrial variants (против VND5160AJTR-E)
- Low-side topology vs high-side alternative (против VNI4140K-32)
Заметки по проектированию
Estimated: at 3.5 A continuous drain current per channel and Rds(on) of 35 mOhm, each channel dissipates approximately 0.43 W. With the SO-8 theta_JA of approximately 50 C/W on 1-oz copper (per JEDEC EIA/JESD51), junction temperature rises ~22 C above ambient. For two channels in parallel at 7 A, dissipation rises to ~1.7 W and junction temperature rises ~85 C, requiring additional copper area or thermal vias to keep Tj below 150 C at 85 C ambient. Design for at least 1 sq inch of copper on the drain pad.
Place a 100 nF ceramic bypass capacitor between each gate pin and the corresponding source pin, as close to the IC as possible (within 2-3 mm). The SO-8 thermal pad should be soldered to a copper pour with multiple thermal vias to a bottom-side ground plane. For PWM-driven inductive loads, add a small gate-series resistor (47-100 ohm) and a 1 nF gate-to-source capacitor to limit dv/dt and ringing on the gate. Avoid running digital signal traces directly under the SO-8 footprint to prevent capacitive coupling into the drain node.
Do not connect the two on-chip channels in series - they share a common drain/substrate and will not block voltage independently. For dual-load applications drive each gate separately, or for higher current parallel both gates together with matched source-trace impedance. Always honor the maximum drain-source clamp (40 V) - connecting to a 24 V industrial bus with inductive transients beyond 40 V may exceed avalanche ratings. Confirm automotive load-dump compatibility per ISO 7637-2 for 12 V systems.
Информация о соответствии
AEC-Q100 automotive qualified per ST datasheet variant title 'Automotive OMNIFET II'. RoHS and REACH compliant per ST product page.
