VO1263AACTR - Dual Photovoltaic MOSFET Driver | Vishay
Артикул: VO1263AACTR ✓ Активен| Кол-во | Цена за ед. | Итого |
|---|---|---|
| 1 | $1.85 | $1,85 |
| 10 | $1.62 | $16,20 |
| 100 | $1.35 | $135,00 |
| 500 | $1.18 | $590,00 |
| 1.000 | $1.02 | $1.020,00 |
VO1263AACTR Обзор
A photovoltaic MOSFET driver (also called an optically-isolated gate driver or photovoltaic isolator) is a type of solid-state isolator that replaces the secondary-side bias supply and pulse transformer used in conventional isolated gate-drive circuits. The device sits in the signal chain between a low-voltage MCU/control IC and the gate of a high-voltage power switch, providing reinforced galvanic isolation while sourcing just enough current to charge the MOSFET gate to its threshold voltage. In the broader taxonomy it belongs to optocouplers -> isolators -> discrete semiconductors -> semiconductor devices, and is the modern descendant of the electromechanical relay in compact, long-lifetime switching.
Key features include a low typical input forward current of 5 mA (IF), an open-circuit photovoltaic output voltage of 9.8 V (VOC), and a short-circuit current of 14 uA (ISC) at IF = 5 mA per channel. The device offers two independent channels in one package, a 5300 Vrms I/O isolation rating per Vishay's test methodology, and a -40C to +100C operating temperature range suitable for industrial and instrumentation environments. The 8-SMD gull-wing package supports standard surface-mount assembly and automated pick-and-place.
Architecturally, the VO1263AACTR uses two matched GaAlAs infrared emitters whose output is sensed by two series-stacked photodiode arrays; the resulting photovoltaic stack delivers a stable floating source that can swing to several volts above the MOSFET source. An external gate-to-source resistor is required to define the off-state and to discharge the gate when the LED is turned off. Because the photovoltaic output is essentially a current source limited by the LED drive, switching speeds are modest (turn-on and turn-off in the millisecond range), which is acceptable for SSR contactor, analog-switch, and slow PWM applications.
Typical applications include solid-state relays (AC and DC output variants), isolated analog switch multiplexers, floating MOSFET/IGBT gate drivers in industrial control, medical patient-isolation switching, and telecom line-card replacements for electromechanical relays. Designers choose this part when they need two isolated drive channels in one package without the complexity of a separate isolated bias supply.
The main design consideration when using the VO1263AACTR is that the photovoltaic output is a current-limited floating source, so the external MOSFET must be selected so that its total gate charge QG can be supplied within the application's required turn-on time (QG must be less than ISC * t_on). Designers should also place a gate-to-source resistor (typically 100 kohm to 1 Mohm) close to the MOSFET gate to guarantee a defined off-state.
This page synthesizes Vishay datasheet parameters, drop-in alternative cross-references, and practical SSRs/isolated gate-drive design notes not found on the manufacturer's product page alone.
Аналоги без доработки для VO1263AACTR — тот же корпус, pin-to-pin совместимость. Компоненты в других корпусах, требующие переработки PCB, исключены.
Инструмент быстрого сравнения — выберите альтернативные компоненты для сравнения бок о бок:
VO1263AAC
✅ Прямая замена📋 Справочный аналог (нет в каталоге)
VO1263AB
✅ Прямая замена📋 Справочный аналог (нет в каталоге)
VO1263AACTR Максимальные параметры и электрические характеристики
| Channel Count | 2 |
| Тип выхода | Photovoltaic (floating voltage source) |
| I/O Isolation Voltage | 5300 Vrms |
| Open-Circuit Output Voltage (VOC) | 9.8 V (typ, per channel, IF = 5 mA) |
| Short-Circuit Output Current (ISC) | 14 uA (typ, per channel, IF = 5 mA) |
| LED Forward Current (IF), typical | 5 mA |
| Диапазон рабочих температур | -40C to +100C |
| Корпус | 8-SMD, gull-wing |
| Тип монтажа | Surface Mount |
| Статус RoHS | Compliant (per Vishay product page) |
| Lead-Free | Yes |
Конфигурация выводов VO1263AACTR
| Контакт 1 | LED1 Anode (+) — Channel 1 LED anode, drive with IF = 5 mA (typ) |
| Контакт 2 | LED1 Cathode (-) — Channel 1 LED cathode, connect to control-side ground return |
| Контакт 3 | NC — Not connected (per datasheet) |
| Контакт 4 | VO1- — Channel 1 photovoltaic output, negative terminal (floating source return) |
| Контакт 5 | VO1+ — Channel 1 photovoltaic output, positive terminal (9.8 V typ, 14 uA ISC typ at IF = 5 mA) |
| Контакт 6 | VO2- — Channel 2 photovoltaic output, negative terminal (floating source return) |
| Контакт 7 | VO2+ — Channel 2 photovoltaic output, positive terminal (9.8 V typ, 14 uA ISC typ at IF = 5 mA) |
| Контакт 8 | LED2 Cathode (-) — Channel 2 LED cathode, connect to control-side ground return |
Типичное применение
VO1263AACTR подходит для 6 применениеs: AC Solid-State Relay (SSR) Output, Isolated Analog-Switch Multiplexer, Floating MOSFET / IGBT Gate Drive in Industrial Control, Medical Patient-Isolation Switching, Telecom Line-Card Relay Replacement, Battery-Management Isolated Switch.
AC Solid-State Relay (SSR) Output
The VO1263AACTR fits this application because its two independent photovoltaic channels each deliver 9.8 V of floating gate drive with 5300 Vrms isolation, enough to switch a back-to-back MOSFET pair controlling a 240 VAC load across a reinforced safety barrier. In a typical zero-cross or random-phase SSR design, channel A of the VO1263AACTR drives the upper AC-switch MOSFET and channel B drives the lower one; the 14 uA ISC suffices for SSR-grade switching speeds because AC line commutation occurs at the zero-cross anyway. Unlike a digital-isolator gate driver it requires no isolated bias supply, dramatically simplifying the BOM and improving long-term reliability by eliminating the secondary-side DC-DC converter that usually fails first in SSRs. Estimated: switching time t_on ~= QG / ISC = ~50 nC / 14 uA = ~3.6 ms per channel for a typical small-signal MOSFET; AC-line SSRs accept this delay.
Рекомендуется
Isolated Analog-Switch Multiplexer
The VO1263AACTR is well matched to floating-analog-switch applications because each photovoltaic output is a true floating source referenced to the photodiode-array negative terminal, allowing a designer to stack MOSFETs in series to build a high-voltage T-switch or multiplexer. The 5300 Vrms isolation barrier keeps low-voltage microcontroller-side control galvanically separated from the high-voltage analog signal path, which is critical in automated test equipment, medical instrumentation front-ends, and process-control signal routing. The dual-channel 8-SMD footprint lets one IC implement a 2-pole T-switch (two series MOSFETs and two photovoltaic drives), halving the PCB area versus two single-channel optoisolators. Performance trade-off: the 14 uA ISC limits the achievable switching time, but T-switches normally run at audio/multiplexer rates where this is irrelevant.
Рекомендуется
Floating MOSFET / IGBT Gate Drive in Industrial Control
In industrial motor-control and inverter designs the VO1263AACTR can drive the gate of a high-side N-channel MOSFET or IGBT whose source floats at the switching node, replacing a traditional isolated DC-DC supply plus a digital isolator. Each photovoltaic channel's 9.8 V VOC sits comfortably above the typical 2-4 V VGS(th) of a small-signal MOSFET, and 5300 Vrms isolation supports 400-690 V AC bus voltages seen in industrial drives. Two channels in one 8-SMD package mean a half-bridge can be driven from a single IC, simplifying the gate-drive bias network. Trade-off: turn-on / turn-off times are millisecond-scale (limited by ISC), so VO1263AACTR is restricted to slow industrial switching (line-frequency relays, soft-start circuits) rather than PWM motor drive where t_on in the hundreds of nanoseconds is mandatory.
Рекомендуется
Medical Patient-Isolation Switching
The VO1263AACTR's 5300 Vrms isolation rating makes it a viable candidate for medical equipment that must provide reinforced galvanic isolation between the patient-connected analog front end and the chassis-grounded control electronics (per IEC 60601-1). Its photovoltaic output is intrinsically safe in patient-leakage terms because it is a current-limited source with no secondary-side bias connection, eliminating the patient-leakage currents a DC-DC bias supply could otherwise introduce. Two independent channels give designers a 2-pole patient-isolation switch (e.g. for switching ECG electrodes or therapy outputs) in a single 8-SMD package. Performance consideration: the millisecond-scale switching time is acceptable for medical devices that switch at therapy onset / completion (seconds), not for real-time ECG signal-path switching where continuous analog must pass through.
Рекомендуется
Telecom Line-Card Relay Replacement
Telecom line cards historically use electromechanical relays to switch subscriber lines between talk, ring, and test busses; the VO1263AACTR replaces those relays with a solid-state equivalent that survives the higher reliability expectations of central-office equipment. Each channel's photovoltaic floating source can drive a MOSFET-based line-switch with sub-millisecond transition, and 5300 Vrms isolation easily covers the 1500 Vrms surge withstand required by telecom standards such as GR-1089. The dual-channel 8-SMD device fits the dense line-card form factor where board real estate is at a premium. Trade-off: on-resistance of the switched MOSFET must be carefully chosen because photovoltaic-driven small-signal MOSFETs typically have higher RDS(on) than power MOSFETs designed for continuous line current.
Рекомендуется
Battery-Management Isolated Switch
In high-voltage battery stacks (electric vehicles, energy storage, e-bike packs), the VO1263AACTR can serve as a galvanically-isolated driver for the pre-charge or discharge MOSFET, providing 9.8 V of floating gate drive with 5300 Vrms isolation between the low-voltage BMS MCU and the high-voltage battery node. Because the photovoltaic output needs no secondary bias rail, the gate-drive circuit remains simple even at the top of the stack where bootstrapping is impossible. Two channels allow simultaneous control of pre-charge and main contactor MOSFETs from one 8-SMD device. Performance consideration: the millisecond-scale turn-on is acceptable because pre-charge events last hundreds of milliseconds anyway, and the absence of an isolated DC-DC converter dramatically improves long-term reliability of the BMS isolation barrier.
Рекомендуется
Сводка рекомендуемых товаров
Справочные инженерные данные для VO1263AACTR — сравнение, рекомендации по проектированию и информация о соответствии.
Руководство по выбору
Сравнение с аналогами
| Параметр | Этот товар | VO1263AAC | VO1263AB |
|---|---|---|---|
| Brand | Vishay Intertechnology | Vishay Intertechnology - same | Vishay Intertechnology - same |
| Package | 8-SMD gull-wing (tape & reel) | 8-SMD gull-wing (tube pack) | 8-DIP through-hole |
| Channel Count | 2 | 2 | 2 |
| Open-Circuit Output Voltage (VOC) | 9.8 V | 9.8 V (same die) | 9.8 V (same die) |
| Short-Circuit Output Current (ISC) | 14 uA | 14 uA (same die) | 14 uA (same die) |
| I/O Isolation Voltage | 5300 Vrms | 5300 Vrms (same die) | 5300 Vrms (same die) |
| LED Forward Current (IF), typical | 5 mA | 5 mA (same die) | 5 mA (same die) |
| Operating Temperature Range | -40C to +100C | -40C to +100C (same die) | -40C to +100C (same die) |
| Mounting Type | Surface Mount (gull-wing) | Surface Mount (gull-wing) | Through-Hole (DIP) |
| Shipping Container | Tape & Reel | Tube | Tube |
Ключевые отличия
- Surface-mount gull-wing packaging (tape and reel) (против VO1263AB)
- Two independent photovoltaic channels in one package (против Single-channel optocouplers (e.g. TLP183))
- True floating photovoltaic output (no secondary bias supply needed) (против Digital-isolator gate drivers (e.g. UCC21530QDWKRQ1))
Заметки по проектированию
Always include a gate-to-source resistor (Rgs, typically 100 kohm to 1 Mohm) on each MOSFET driven by the VO1263AACTR. The photovoltaic output is a floating current source with no defined off-state; without Rgs the gate can float to an undefined voltage and the MOSFET will partially conduct, dissipating DC power in the load and potentially overheating the SSR or analog switch. Place Rgs physically close to the MOSFET gate-source pins to minimize noise pickup that could otherwise falsely drive the channel on.
Keep the LED-side traces (control side) physically separated from the photovoltaic-output traces (high-voltage side) and provide a clear slot or wide creepage gap on the PCB to maintain the 5300 Vrms isolation rating in pollution-degree-2 environments. Per IEC 60664-1, the PCB creepage distance for 5300 Vrms reinforced isolation in pollution-degree-2 (typical office/industrial) requires at least 10 mm of surface distance, which usually means a slot or a notch in the PCB under the device body. Estimated: 8 mm of clearance plus 2 mm slot under the package body is a workable approximation; always cross-check against the datasheet and applicable safety standard for the end product.
The VO1263AACTR has a millisecond-scale switching time because its 14 uA ISC must charge the driven MOSFET's gate charge QG before turn-on is complete. Select downstream MOSFETs with the smallest practical QG (preferably below 10 nC for sub-millisecond turn-on) so the SSR response time stays within application limits; for typical 50 nC QG small-signal MOSFETs, t_on ~= QG / ISC = ~3.6 ms. Add a small gate resistor (100 ohm to 1 kohm) in series with Rgs if multiple MOSFETs are paralleled, to dampen gate-oscillation at MOSFET drain-to-source dv/dt transitions.
Информация о соответствии
RoHS and lead-free compliance per Vishay product page. The VO1263AACTR is not AEC-Q100 qualified (industrial/consumer grade, not automotive grade). Halogen-free status not stated in verified web data - set to unknown per data authenticity rules.
