ZXMS6004DN8-13 - Dual 60V 1.3A Self-Protected N-FET IntelliFET | Diodes Inc
Артикул: ZXMS6004DN8-13 ✓ Активен| Кол-во | Цена за ед. | Итого |
|---|---|---|
| 1 | $0.78 | $0,78 |
| 10 | $0.69 | $6,90 |
| 100 | $0.55 | $55,00 |
| 500 | $0.46 | $230,00 |
| 1.000 | $0.38 | $380,00 |
| 2.500 | $0.33 | $825,00 |
ZXMS6004DN8-13 Обзор
An IntelliFET (Intelligent FET) is a self-protected low-side power switch that combines an N-channel enhancement-mode MOSFET with on-chip protection circuits in one package. It belongs to the smart power switch family within power-management semiconductors, sitting hierarchically above discrete MOSFETs but below fully featured half-bridge motor drivers. The "self-protected" attribute means the IC can survive common fault conditions (short to battery, short to ground, inductive flyback, ESD strikes) without external TVS diodes or sense resistors, simplifying PCB design in harsh automotive and industrial environments.
Key features include dual independent 60 V / 1.3 A channels, 0.5 ohm typical RDS(on) at VGS=5 V, integrated active clamp at 60 V, 120 mJ avalanche energy rating, over-temperature shutdown, over-current limiting, and 8 kV HBM ESD protection on the input pin. The logic-level gate is driven directly from a 3.3 V or 5 V GPIO without requiring a gate driver, which is essential for low-pin-count microcontrollers. The SO-8 package provides a thermal resistance of approximately 80 C/W (per datasheet) and operates from -40 C to +125 C junction temperature.
Architecturally, each channel consists of a vertical N-channel DMOS output stage plus a protection state machine that monitors drain current, junction temperature, and drain-source voltage. The active clamp limits VDS to 60 V during inductive turn-off, allowing direct driving of solenoids, relays, and small DC motors without freewheeling diodes. The two channels share only the package and ground pins, enabling independent PWM control of two loads with separate diagnostic capability.
Typical applications include 12 V automotive lamp and LED driver circuits, solenoid and valve drivers in HVAC and industrial controls, relay replacement in PLCs, small brushed DC motor drivers in robotics and white goods, and general low-side switching from microcontroller I/O. The wide 60 V rating also tolerates 24 V industrial bus transients.
When designing with this device, ensure the total power dissipation (I2 * RDS(on) per channel plus switching losses) does not exceed the SO-8 thermal budget. For continuous 1 A loads on both channels simultaneously, a 1 oz copper pour of at least 100 mm^2 connected to the SO-8 thermal pad area is recommended. The two channels are not internally bonded; each gate must be driven independently.
This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet alone.
Аналоги без доработки для ZXMS6004DN8-13 — тот же корпус, pin-to-pin совместимость. Компоненты в других корпусах, требующие переработки PCB, исключены.
Инструмент быстрого сравнения — выберите альтернативные компоненты для сравнения бок о бок:
ZXMS6004DN8Q-13
✅ Прямая замена📋 Справочный аналог (нет в каталоге)
ZXMS6004N8-13
✅ Прямая замена📋 Справочный аналог (нет в каталоге)
ZXMS6004N8Q-13
✅ Прямая замена ⚠️ Характеристики не проверены📋 Справочный аналог (нет в каталоге)
ZXMS6004DGQ-13
✅ Прямая замена📋 Справочный аналог (нет в каталоге)
ZXMS6001N3TA
✅ Прямая замена📋 Справочный аналог (нет в каталоге)
ZXMS6004DN8-13 Максимальные параметры и электрические характеристики
| FET Type | Dual N-Channel (Self-Protected IntelliFET) |
| Number of Channels | 2 |
| Drain-to-Source Voltage (VDS) | 60 V |
| Continuous Drain Current (ID) | 1.3 A per channel |
| RDS(on) (Typ) | 0.5 ohm at VGS = 5 V |
| Gate Drive (Logic-Level) | 3.3 V / 5 V compatible |
| Avalanche Energy (EAS) | 120 mJ |
| Active Clamp Voltage | 60 V |
| Over-Temperature Protection | Yes (integrated shutdown) |
| Over-Current Protection | Yes (integrated current limit) |
| Over-Voltage Protection | Yes (active clamp at 60 V) |
| Диапазон рабочих температур | -40 C to +125 C (TJ) |
| Корпус | SO-8 (SOIC-8) |
| Тип монтажа | Surface Mount |
| Статус RoHS | Compliant |
Конфигурация выводов ZXMS6004DN8-13
| Контакт 1 | S1 — Channel 1 source |
| Контакт 2 | D1 — Channel 1 drain |
| Контакт 3 | S1 — Channel 1 source |
| Контакт 4 | GND — Ground (substrate / thermal) |
| Контакт 5 | D2 — Channel 2 drain |
| Контакт 6 | S2 — Channel 2 source |
| Контакт 7 | G2 — Channel 2 gate (logic-level input) |
| Контакт 8 | G1 — Channel 1 gate (logic-level input) |
Типичное применение
ZXMS6004DN8-13 подходит для 6 применениеs: 12 V Automotive Lamp and LED Driver, Solenoid and Valve Driver (HVAC / Industrial), Relay Replacement in PLCs and Control Boards, Small Brushed DC Motor Driver (White Goods / Robotics), General-Purpose Low-Side Switch from MCU GPIO, 24 V Industrial Bus Switching (PLC I/O Modules).
12 V Automotive Lamp and LED Driver
The ZXMS6004DN8-13's two independent 60 V / 1.3 A channels directly switch automotive front and rear lamps from a 3.3 V or 5 V body-control MCU GPIO without an external gate driver. The integrated 60 V active clamp absorbs the inductive kick from incandescent or LED wiring, the 120 mJ avalanche rating tolerates load-dump transients on the 12 V bus, and the 0.5 ohm RDS(on) keeps conduction loss below 1 W per channel at 1 A. Each channel can also PWM-dim LEDs at low duty cycle for DRL or interior lighting without additional driver stages.
Рекомендуется
Solenoid and Valve Driver (HVAC / Industrial)
The ZXMS6004DN8-13 drives 12 V or 24 V solenoids, hydraulic valves, and pneumatic actuators in HVAC and process-control equipment with two channels per SO-8 footprint. The 60 V VDS rating tolerates 24 V industrial bus transients, the over-current limit protects against coil shorts at end-of-stroke, and the logic-level input connects directly to a PLC or MCU output without a discrete gate driver. Built-in over-temperature shutdown prevents thermal runaway during stalled-valve fault conditions, replacing a discrete MOSFET plus Zener-Diac clamp with one IC.
Рекомендуется
Relay Replacement in PLCs and Control Boards
Replacing electromechanical relays with the ZXMS6004DN8-13 eliminates coil current, contact bounce, arcing, and mechanical wear in PLC digital outputs and process-control boards. Each channel switches up to 1.3 A continuously at 60 V with sub-millisecond response, and the integrated active clamp removes the snubber diode otherwise required across the relay coil. Two channels in one SO-8 cut board area versus two discrete TO-220 relays, and the logic-level gate is driven directly from PLC 5 V or 3.3 V logic outputs without level shifting.
Рекомендуется
Small Brushed DC Motor Driver (White Goods / Robotics)
The ZXMS6004DN8-13 drives small 12 V brushed DC motors in white goods (dishwasher pumps, washing-machine drain pumps, refrigerator damper motors) and hobby robotics (gear motors, vibration motors) with two channels per SO-8 footprint. The 60 V active clamp absorbs motor inductive kickback at PWM frequencies up to several kHz, the over-current limit detects jammed-impeller faults, and the dual channels support direction-reversal via an H-bridge when paired with a second ZXMS6004DN8-13 or complementary high-side switch. RDS(on) of 0.5 ohm keeps conduction loss low even at high duty cycle.
Рекомендуется
General-Purpose Low-Side Switch from MCU GPIO
The ZXMS6004DN8-13 is a textbook general-purpose low-side switch for any 3.3 V or 5 V microcontroller driving resistive, capacitive, or mildly inductive loads at up to 60 V and 1.3 A per channel. Two channels per SO-8 allow a single IC to handle multiple status LEDs, buzzers, small heaters, or sensor power rails without external MOSFETs or protection Zeners. The integrated ESD protection on the gate input allows direct connection to GPIO without external TVS, simplifying BOM and saving PCB area in cost-sensitive consumer designs.
Рекомендуется
24 V Industrial Bus Switching (PLC I/O Modules)
The ZXMS6004DN8-13's 60 V VDS rating provides ample headroom over the 24 V industrial bus plus IEC 61131-2 transient tolerances, making it suitable for digital-output modules in PLCs and remote I/O. Two channels per SO-8 double channel density versus discrete TO-252 MOSFETs, the 1.3 A continuous rating covers most 24 V digital outputs, and the integrated over-temperature shutdown prevents fire risk in the event of a wiring short. The logic-level gate accepts 3.3 V or 5 V from PLC backplane logic with no level shifter, and the active clamp tolerates inductive load kickback from field wiring up to several meters long.
Рекомендуется
Сводка рекомендуемых товаров
Справочные инженерные данные для ZXMS6004DN8-13 — сравнение, рекомендации по проектированию и информация о соответствии.
Руководство по выбору
Сравнение с аналогами
| Параметр | Этот товар | ZXMS6004DN8Q-13 | ZXMS6004N8-13 | ZXMS6004N8Q-13 | ZXMS6004DGQ-13 | ZXMS6001N3TA |
|---|---|---|---|---|---|---|
| Brand | Diodes Incorporated | Diodes Incorporated | Diodes Incorporated | Diodes Incorporated | Diodes Incorporated | Diodes Incorporated |
| Package | SO-8 | SO-8 (same) | SO-8 (same) | SO-8 (same) | SO-8 (same) | SOT-223 (different footprint) |
| Channels | 2 | 2 | 1 | 1 | 2 | 1 |
| Drain-to-Source Voltage | 60 V | 60 V | 60 V | 60 V | 60 V | 60 V |
| Continuous Drain Current | 1.3 A / channel | 1.3 A / channel | 1.3 A | 1.3 A | 1.3 A / channel | 1.0 A |
| RDS(on) (typ) | 0.5 ohm | 0.5 ohm | 0.5 ohm | 0.5 ohm | 0.5 ohm | 0.5 ohm |
| Active Clamp | 60 V (integrated) | 60 V (integrated) | 60 V (integrated) | 60 V (integrated) | 60 V (integrated) | 60 V (integrated) |
| Automotive (AEC-Q100) | No (industrial) | Yes (AEC-Q100) | No | Yes (AEC-Q100) | Yes (AEC-Q100) | No |
Ключевые отличия
- Dual channels in one SO-8 package (против ZXMS6004N8-13)
- Integrated active clamp removes external snubber (против Discrete N-channel MOSFET + Zener clamp)
- Logic-level gate compatible with 3.3 V MCU GPIO (против Standard-gate threshold MOSFET)
Заметки по проектированию
Estimated: at 1.0 A per channel and 0.5 ohm RDS(on), each channel dissipates approximately 0.5 W, so two channels total 1.0 W in the SO-8 package. With a junction-to-ambient thermal resistance of approximately 80 C/W on a 1 oz JEDEC 1S0P test board, junction temperature rises roughly 80 C above 25 C ambient, hitting 105 C. Add a copper pour of at least 100 mm^2 connected to the source pins (pins 1 and 3 / 6) to drop theta_JA toward 50 C/W and keep junction temperature safely below 125 C at sustained 1 A per channel. For two channels at 1.3 A simultaneously, derate to 0.8 A per channel or use the Q-grade variant with similar thermal limits.
Place the ZXMS6004DN8-13 close to the load to minimize the high-current drain loop inductance, and connect both source pins of each channel (pins 1 and 3 for channel 1, pin 6 for channel 2) directly to the ground plane with multiple vias to reduce source inductance that could otherwise slow switching and create ringing. The gate input traces (pins 7 and 8) should be short and kept away from the drain traces to avoid false triggering from drain-to-gate capacitive coupling; a 10 kohm pull-down resistor on each gate is recommended to keep the FET off during MCU reset.
Do not connect the ZXMS6004DN8-13 channels in parallel to double the current capacity: the internal current-limit thresholds are per-channel and would not share load equally due to RDS(on) mismatch, leading to thermal runaway on the more-loaded channel. Do not drive the gate above 5 V unless the datasheet explicitly permits it; the integrated gate ESD structure is designed for 3.3 V / 5 V logic levels. Finally, do not exceed 60 V on the drain even momentarily - although the active clamp limits VDS, sustained operation at the clamp voltage forces avalanche dissipation that the 120 mJ rating cannot absorb indefinitely.
Информация о соответствии
RoHS and lead-free per Diodes Incorporated product page. Standard -13 variant is industrial grade (not AEC-Q100); choose ZXMS6004DN8Q-13 for AEC-Q100 automotive qualification. Halogen-free status confirmed via Diodes Incorporated environmental compliance data.
