10AX115N2F45E1SG vs 10AX115H2F34E2SG Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng 10AX115N2F45E1SG sa pamamagitan ng Altera at 10AX115H2F34E2SG sa pamamagitan ng Intel. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Altera
10AX115N2F45E1SG - Arria 10 GX 1150K LE FPGA, 1932-FCBGA | Altera
10AX115N2F45E1SG ✓ Nakahanda
Pagsanggunian na paghahambing
| Parametro | 10AX115N2F45E1SG | 10AX115H2F34E2SG |
|---|---|---|
| Brand | Altera | Intel |
| Kategorya | FPGA & CPLD | FPGA & CPLD |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Family | Arria 10 GX | — |
| Device Variant | 10AX115 (1150K Logic Elements) | — |
| Logic Elements | 1,150,000 | — |
| Embedded Memory | 68,857,640 bits (68.86 Mbit) | — |
| User I/O Count | 768 | — |
| Transceivers | Up to 24 channels, 14.1 Gbps | 24 channels up to 14.1 Gbps |
| Core Voltage | 0.9 V | — |
| Process Technology | 20 nm | — |
| Packhaging | 1932-BBGA, FC-FBGA (F45) | 1152-ball FCBGA (F34) 35x35 mm |
| Bilang ng Pin | 1932 | — |
| Uri ng Pagpapasok | Surface Mount (FCBGA) | Surface Mount (BGA) |
| Temperature na Operasyon | -40C to +100C (industrial) | — |
| Tindminan RoHS | Compliant | Compliant |
| Hard Memory Controllers | Yes | — |
| Hard PCIe Gen3 | Yes | — |
| Configuration | Partial reconfiguration supported | — |
| Series | — | Arria 10 GX |
| Logic Elements (LE) | — | 1,150,000 |
| Adaptive Logic Modules (ALM) | — | 427,200 |
| Embedded Memory (M20K blocks) | — | 2,713 blocks / 68,857,600 bits |
| User I/O Pins | — | 504 |
| PCIe Hard IP | — | Gen3 x4 / Gen2 x8 |
| Hard Processor System | — | Dual-core ARM Cortex-A9 MPCore |
| DSP Blocks | — | Hardened IEEE 754 single/double-precision floating-point |
| 18x19 Multipliers | — | 2,150 |
| PLLs | — | Fractional, up to 24 |
| Memory Interfaces | — | DDR4 up to 1,600 Mbps, DDR3, QDRII+, RLDRAM3 |
| Speed/Operating Temperature Grade | — | -2 / 0 C to 100 C (E2 = industrial, enhanced) |
| Process Node | — | 20 nm Tri-Gate (Intel) |