10M16DCF256C8G vs 10M08DCF256C8G Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng 10M16DCF256C8G sa pamamagitan ng Intel at 10M08DCF256C8G sa pamamagitan ng Intel. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Pagsanggunian na paghahambing
| Parametro | 10M16DCF256C8G | 10M08DCF256C8G |
|---|---|---|
| Brand | Intel | Intel |
| Kategorya | FPGA & CPLD | FPGA & CPLD |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Family | MAX 10 | — |
| Logic Elements (LE) | 16000 | — |
| Maximum User I/O | 178 | — |
| Embedded SRAM | 562176 bits (562 Kbit) | — |
| User Flash | 5140 Kbit (5.14 Mbit) | — |
| Process Technology | 55 nm | TSMC 55 nm embedded flash CMOS |
| Core Voltage | 1.2 V | — |
| Speed Grade | C8 | C8 (commercial, slowest speed bin) |
| Configuration Type | Dual-configuration flash (DC) | — |
| Maximum Operating Frequency | 472.5 MHz | — |
| Packhaging | 256-ball FineLine BGA (FBGA), 17 x 17 mm | 256-LBGA (F256, FineLine BGA) |
| Temperature na Operasyon | 0 °C to +85 °C (commercial) | 0C to +85C (commercial) |
| Uri ng Pagpapasok | Surface Mount | Surface Mount (BGA) |
| Non-volatile Configuration | Yes (on-chip flash) | — |
| Tindminan RoHS | Compliant | Compliant |
| Series | — | MAX 10 |
| Logic Elements | — | 8,000 |
| Embedded Memory (bits) | — | 387,072 (378 Kbits user flash + block SRAM) |
| User I/O Count | — | 178 |
| Pitch | — | 1.0 mm |
| Core Voltage (VCCINT) | — | 1.2 V |
| I/O Bank Voltage (VCCIO) | — | 1.2 V to 3.3 V (per bank) |
| Configuration | — | Internal flash (instant-on, non-volatile) |
| ADC | — | Dual 12-bit SAR, up to 17 analog inputs |
| 18x18 Multipliers | — | 8 |
| PLLs | — | 2 |
| Global Clock Networks | — | 4 |
| Design Software | — | Intel Quartus Prime (Lite / Standard / Pro) |
| Level ng MSL | — | 3 (168 hours) |