5CSEBA5U19C7N vs 5CSEBA4U19I7LN Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng 5CSEBA5U19C7N sa pamamagitan ng Intel at 5CSEBA4U19I7LN sa pamamagitan ng Intel. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Intel
5CSEBA5U19C7N - Cyclone V SE SoC FPGA 85K LE Dual A9 800MHz | Altera
5CSEBA5U19C7N ✓ NakahandaPagsanggunian na paghahambing
| Parametro | 5CSEBA5U19C7N | 5CSEBA4U19I7LN |
|---|---|---|
| Brand | Intel | Intel |
| Kategorya | FPGA & CPLD | FPGA & CPLD |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Family | Cyclone V SE SoC FPGA | Cyclone V SE SoC FPGA |
| Logic Elements | 85,000 | 40K |
| Hard Processor System | Dual ARM Cortex-A9 MPCore with CoreSight | Dual-core ARM Cortex-A9 MPCore with CoreSight |
| HPS Maximum Frequency | 800 MHz per core | 925 MHz |
| Packhaging | 484-UBGA (UBGAmobile, 19x19 mm) | 484-pin UFBGA (19x19 mm, 0.8 mm pitch) |
| Temperature na Operasyon | 0C to +85C (commercial, junction) | — |
| Speed Grade | -7 (standard) | — |
| Process Node | 28 nm low-power (TSMC) | — |
| Supply Voltage (Core) | 1.1 V typical | — |
| DSP Blocks | Variable-precision, 18x18 / 27x27 multipliers | — |
| Embedded Memory | M10K + MLAB blocks, ~4,450 Kbits total | — |
| HPS Peripherals | EMAC, USB 2.0 OTG, NAND, DDR3, SPI, QSPI, I2C, UART | UART, SPI, I2C, USB 2.0 OTG, EMAC, SD/MMC, NAND, GPIO |
| Uri ng Pagpapasok | Surface Mount (BGA) | Surface Mount (BGA) |
| RoHS / Pb-free | Yes | — |
| Configuration Memory | External (active serial via HPS or FPGA) | — |
| Level ng MSL | 3 (per JEDEC J-STD-020, reflow 260C) | — |
| Block Pins (User I/O) | Approximately 66 user I/O pins | — |
| FPGA Logic Performance | — | up to 925 MHz DSP / 300 MHz logic |
| Embedded Memory (M10K) | — | [DATA_NEEDED: total M10K bits] |
| DSP Blocks (18x18 Multipliers) | — | 56 |
| PLLs | — | [DATA_NEEDED: PLL count per family datasheet] |
| Memory Controller | — | DDR2/DDR3/LPDDR2 with ECC (hardened in HPS) |
| Process Technology | — | TSMC 28 nm low-power |
| Operating Temperature (Industrial) | — | -40C to +100C (I7 grade, inferred from MPN suffix) |
| Supply Voltage (core) | — | 1.1 V typical (Cyclone V family) |
| Tindminan RoHS | — | Compliant |
| Configuration Scheme | — | Serial (EPCS) or Quad-Serial Flash |