5M2210ZF256A5N vs 5M2210ZF256C4N Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng 5M2210ZF256A5N sa pamamagitan ng Intel at 5M2210ZF256C4N sa pamamagitan ng Altera. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Altera
5M2210ZF256C4N - MAX V CPLD, 1700 LE, FBGA-256, C4 Speed | Intel / Altera
5M2210ZF256C4N ✓ NakahandaPagsanggunian na paghahambing
| Parametro | 5M2210ZF256A5N | 5M2210ZF256C4N |
|---|---|---|
| Brand | Intel | Altera |
| Kategorya | FPGA & CPLD | FPGA & CPLD |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Programmable Logic Type | CPLD (Flash PLD), MAX V Family | — |
| Macro Cells | 1700 | — |
| User I/Os | 203 | — |
| Number of Inputs | 203 | — |
| Maximum Internal Frequency | 201.1 MHz | — |
| Propagation Delay | 11.2 ns | — |
| Core Supply Voltage | 1.8 V | — |
| Technology | CMOS | — |
| Package Type | 256-ball PBGA / FBGA (S-PBGA-B256) | — |
| Package Shape | Square | — |
| Terminal Form | Ball | — |
| Terminal Pitch | 1.000 mm | — |
| Number of Terminals | 256 | — |
| Hanay ng Temperature na Operasyon | -40 C to +105 C (fetched product data) | — |
| In-System Programming | Yes | — |
| JTAG Boundary Scan | Yes | — |
| Tindminan RoHS | [DATA_NEEDED: RoHS status declaration] | Compliant (Pb-free ball finish) |
| Family | — | MAX V |
| Device | — | 5M2210Z |
| Logic Elements (LEs) | — | 1700 |
| Logic Array Blocks (LABs) | — | 221 |
| User Flash Memory | — | 8192 bits |
| Internal RAM | — | 212 Kbits |
| Maximum User I/O (family) | — | 203 |
| User I/O (this package) | — | 160 |
| Packhaging | — | FBGA-256 (FineLine BGA) |
| Temperature na Operasyon | — | 0C to 85C (Commercial) |
| Speed Grade | — | C4 (tPD ~4 ns class) |
| Core Voltage (VCCINT) | — | 1.8 V |
| I/O Bank Voltage (VCCIO) | — | 1.5 V / 1.8 V / 2.5 V / 3.3 V |
| Number of I/O Banks | — | 4 |
| Programming Interface | — | JTAG (IEEE 1149.1) / IEEE 1532 ISP |
| Configuration Method | — | Internal flash (instant-on < 1 ms) |
| Process Technology | — | 0.30 um 6-metal-layer CMOS |