A3PE3000L-1FG896I vs A3PE3000L-1FGG896 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng A3PE3000L-1FG896I sa pamamagitan ng Microchip Technology at A3PE3000L-1FGG896 sa pamamagitan ng Microchip Technology. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Microchip Technology
A3PE3000L-1FG896I - 3M-Gate Low-Power Flash FPGA | Microchip
A3PE3000L-1FG896I ✓ NakahandaMicrochip Technology
A3PE3000L-1FGG896 - 3M-Gate ProASIC3L Flash FPGA | Microchip
A3PE3000L-1FGG896 ✓ NakahandaPagsanggunian na paghahambing
| Parametro | A3PE3000L-1FG896I | A3PE3000L-1FGG896 |
|---|---|---|
| Brand | Microchip Technology | Microchip Technology |
| Kategorya | FPGA & CPLD | FPGA & CPLD |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Family | ProASIC3L (Flash FPGA) | ProASIC3L |
| System Gates | 3,000,000 | 3000000 |
| Logic Cells | 75,264 | 75264 |
| User I/O | 620 | 620 |
| Core Voltage | 1.2 V to 1.5 V | 1.2 V (supports 1.2 V to 1.5 V) |
| Process Technology | 130 nm CMOS flash | 130 nm flash |
| Maximum Frequency | 892.86 MHz | — |
| Packhaging | 896-ball FBGA (FG896), 1.00 mm pitch | 896-ball FBGA (FGG896), 1.00 mm pitch |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Temperature na Operasyon | -40C to +85C (Industrial) | — |
| Configuration Memory | On-chip Flash (non-volatile, single chip) | Nonvolatile flash (single-chip) |
| Low Power Feature | Flash*Freeze Technology | — |
| JTAG Boundary Scan | IEEE 1149.1 | — |
| Input Options | Schmitt trigger option on single-ended inputs | — |
| Pull Options | Weak pull-up / pull-down | — |
| Reprogrammability | Live reprogrammable | — |
| Speed Grade | -1 | -1 |
| Tindminan RoHS | [DATA_NEEDED: RoHS status] | — |
| Total Bits of RAM | — | [DATA_NEEDED: Total embedded RAM bits] |
| I/O Voltage | — | As low as 1.2 V |
| Special Features | — | Flash*Freeze technology |
| Packaging | — | Tray |
| Terminal Pitch | — | 1.00 mm |
| Technology Base | — | CMOS flash |
| Dynamic Power Reduction vs ProASIC3 | — | Approx. 40% |
| Static Power Reduction vs ProASIC3 | — | Approx. 50% |